DE69700241T2 - Halbleiterspeichergerät, um Fehlfunktion durch Zeilenauswahlleitungsunterbrechung zu vermeiden - Google Patents
Halbleiterspeichergerät, um Fehlfunktion durch Zeilenauswahlleitungsunterbrechung zu vermeidenInfo
- Publication number
- DE69700241T2 DE69700241T2 DE69700241T DE69700241T DE69700241T2 DE 69700241 T2 DE69700241 T2 DE 69700241T2 DE 69700241 T DE69700241 T DE 69700241T DE 69700241 T DE69700241 T DE 69700241T DE 69700241 T2 DE69700241 T2 DE 69700241T2
- Authority
- DE
- Germany
- Prior art keywords
- memory device
- semiconductor memory
- malfunction due
- prevent malfunction
- interruption
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/16—Error detection or correction of the data by redundancy in hardware
- G06F11/20—Error detection or correction of the data by redundancy in hardware using active fault-masking, e.g. by switching out faulty elements or by switching in spare elements
- G06F11/2002—Error detection or correction of the data by redundancy in hardware using active fault-masking, e.g. by switching out faulty elements or by switching in spare elements where interconnections or communication control functionality are redundant
- G06F11/2007—Error detection or correction of the data by redundancy in hardware using active fault-masking, e.g. by switching out faulty elements or by switching in spare elements where interconnections or communication control functionality are redundant using redundant communication media
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/83—Masking faults in memories by using spares or by reconfiguring using programmable devices with reduced power consumption
- G11C29/832—Masking faults in memories by using spares or by reconfiguring using programmable devices with reduced power consumption with disconnection of faulty elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/10—Decoders
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Quality & Reliability (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Dram (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4525596 | 1996-03-01 | ||
JP19820496 | 1996-07-26 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69700241D1 DE69700241D1 (de) | 1999-07-08 |
DE69700241T2 true DE69700241T2 (de) | 1999-11-04 |
Family
ID=26385224
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69700241T Expired - Lifetime DE69700241T2 (de) | 1996-03-01 | 1997-02-25 | Halbleiterspeichergerät, um Fehlfunktion durch Zeilenauswahlleitungsunterbrechung zu vermeiden |
DE69704204T Expired - Lifetime DE69704204T2 (de) | 1996-03-01 | 1997-02-25 | Halbleiterspeichergerät, um Fehlfunktion durch Spaltenauswahlleitungsunterbrechung oder Zeilenauswahlleitungsunterbrechung zu vermeiden |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69704204T Expired - Lifetime DE69704204T2 (de) | 1996-03-01 | 1997-02-25 | Halbleiterspeichergerät, um Fehlfunktion durch Spaltenauswahlleitungsunterbrechung oder Zeilenauswahlleitungsunterbrechung zu vermeiden |
Country Status (3)
Country | Link |
---|---|
US (2) | US5825694A (de) |
EP (2) | EP0793176B1 (de) |
DE (2) | DE69700241T2 (de) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5371400B2 (ja) | 2007-12-14 | 2013-12-18 | 株式会社半導体エネルギー研究所 | メモリ及び半導体装置 |
US7692975B2 (en) * | 2008-05-09 | 2010-04-06 | Micron Technology, Inc. | System and method for mitigating reverse bias leakage |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3810124A (en) * | 1972-06-30 | 1974-05-07 | Ibm | Memory accessing system |
US4368523A (en) * | 1979-12-20 | 1983-01-11 | Tokyo Shibaura Denki Kabushiki Kaisha | Liquid crystal display device having redundant pairs of address buses |
JPS5960794A (ja) * | 1982-09-29 | 1984-04-06 | Fujitsu Ltd | ダイナミツク型半導体記憶装置 |
CA1208558A (en) * | 1982-10-07 | 1986-07-29 | Kazuo Kigasawa | Soft buccal |
JPS59116985A (ja) * | 1982-11-29 | 1984-07-06 | Fujitsu Ltd | 半導体記憶装置 |
JPS60206164A (ja) * | 1984-03-30 | 1985-10-17 | Toshiba Corp | 半導体メモリ装置 |
JPS6212997A (ja) * | 1985-07-10 | 1987-01-21 | Mitsubishi Electric Corp | 半導体記憶装置 |
JPS6290950A (ja) * | 1985-10-16 | 1987-04-25 | Mitsubishi Electric Corp | 半導体装置 |
JPS63308386A (ja) * | 1987-01-30 | 1988-12-15 | Sony Corp | 半導体装置とその製造方法 |
JP2569040B2 (ja) * | 1987-03-18 | 1997-01-08 | 株式会社日立製作所 | 半導体集積回路装置 |
US5204842A (en) * | 1987-08-05 | 1993-04-20 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor memory with memory unit comprising a plurality of memory blocks |
JPS6481250A (en) * | 1987-09-22 | 1989-03-27 | Nec Corp | Semiconductor memory device having multilayer metal wiring structure |
JPH01184787A (ja) * | 1988-01-19 | 1989-07-24 | Toshiba Corp | 半導体メモリ |
US5161121A (en) * | 1988-06-27 | 1992-11-03 | Oki Electric Industry Co., Ltd. | Random access memory including word line clamping circuits |
JPH027286A (ja) * | 1988-06-27 | 1990-01-11 | Oki Electric Ind Co Ltd | ダイナミックram |
JPH0417197A (ja) * | 1990-05-10 | 1992-01-21 | Mitsubishi Electric Corp | 半導体メモリ装置 |
JPH04127470A (ja) * | 1990-09-19 | 1992-04-28 | Hitachi Ltd | 半導体記憶装置 |
JP2617617B2 (ja) * | 1990-11-16 | 1997-06-04 | 九州日本電気株式会社 | 半導体メモリ |
JP3226579B2 (ja) * | 1991-12-24 | 2001-11-05 | 沖電気工業株式会社 | 半導体記憶装置 |
JPH05210978A (ja) * | 1992-01-31 | 1993-08-20 | Sharp Corp | 半導体記憶装置 |
JP3072871B2 (ja) * | 1992-03-19 | 2000-08-07 | 株式会社東芝 | 半導体メモリ装置 |
US5406526A (en) * | 1992-10-01 | 1995-04-11 | Nec Corporation | Dynamic random access memory device having sense amplifier arrays selectively activated when associated memory cell sub-arrays are accessed |
US5465233A (en) * | 1993-05-28 | 1995-11-07 | Sgs-Thomson Microelectronics, Inc. | Structure for deselecting broken select lines in memory arrays |
JP3354231B2 (ja) * | 1993-09-29 | 2002-12-09 | 三菱電機エンジニアリング株式会社 | 半導体装置 |
JP3364549B2 (ja) * | 1995-02-22 | 2003-01-08 | 三菱電機株式会社 | 半導体記憶装置 |
-
1997
- 1997-02-25 EP EP97103040A patent/EP0793176B1/de not_active Expired - Lifetime
- 1997-02-25 EP EP99103686A patent/EP0915421B1/de not_active Expired - Lifetime
- 1997-02-25 DE DE69700241T patent/DE69700241T2/de not_active Expired - Lifetime
- 1997-02-25 DE DE69704204T patent/DE69704204T2/de not_active Expired - Lifetime
- 1997-02-26 US US08/807,007 patent/US5825694A/en not_active Expired - Lifetime
-
1998
- 1998-09-17 US US09/154,734 patent/US5986915A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE69700241D1 (de) | 1999-07-08 |
EP0793176B1 (de) | 1999-06-02 |
US5986915A (en) | 1999-11-16 |
DE69704204T2 (de) | 2001-07-12 |
US5825694A (en) | 1998-10-20 |
EP0915421A3 (de) | 1999-06-23 |
EP0793176A2 (de) | 1997-09-03 |
EP0793176A3 (de) | 1997-09-17 |
EP0915421A2 (de) | 1999-05-12 |
EP0915421B1 (de) | 2001-03-07 |
DE69704204D1 (de) | 2001-04-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |