JP2007201437A5 - - Google Patents
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- Publication number
- JP2007201437A5 JP2007201437A5 JP2006342689A JP2006342689A JP2007201437A5 JP 2007201437 A5 JP2007201437 A5 JP 2007201437A5 JP 2006342689 A JP2006342689 A JP 2006342689A JP 2006342689 A JP2006342689 A JP 2006342689A JP 2007201437 A5 JP2007201437 A5 JP 2007201437A5
- Authority
- JP
- Japan
- Prior art keywords
- electrically connected
- terminal
- diode
- type transistor
- latch
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 claims 15
- 239000000758 substrate Substances 0.000 claims 7
- 239000010409 thin film Substances 0.000 claims 4
- LPQOADBMXVRBNX-UHFFFAOYSA-N ac1ldcw0 Chemical group Cl.C1CN(C)CCN1C1=C(F)C=C2C(=O)C(C(O)=O)=CN3CCSC1=C32 LPQOADBMXVRBNX-UHFFFAOYSA-N 0.000 claims 1
- 239000011521 glass Substances 0.000 claims 1
- 238000009413 insulation Methods 0.000 claims 1
- 239000010453 quartz Substances 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006342689A JP2007201437A (ja) | 2005-12-27 | 2006-12-20 | 半導体装置 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005375564 | 2005-12-27 | ||
| JP2006342689A JP2007201437A (ja) | 2005-12-27 | 2006-12-20 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2007201437A JP2007201437A (ja) | 2007-08-09 |
| JP2007201437A5 true JP2007201437A5 (enExample) | 2010-05-20 |
Family
ID=38455652
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006342689A Withdrawn JP2007201437A (ja) | 2005-12-27 | 2006-12-20 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2007201437A (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8411482B2 (en) * | 2008-08-20 | 2013-04-02 | Intel Corporation | Programmable read only memory |
| KR101644811B1 (ko) | 2008-09-19 | 2016-08-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| KR101996773B1 (ko) * | 2009-10-21 | 2019-07-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| KR101629194B1 (ko) * | 2009-10-30 | 2016-06-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 논리 회로 및 반도체 장치 |
| KR101708607B1 (ko) | 2009-11-20 | 2017-02-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| WO2011086871A1 (en) * | 2010-01-15 | 2011-07-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| WO2011145468A1 (en) | 2010-05-21 | 2011-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and semiconductor device |
| US8854865B2 (en) * | 2010-11-24 | 2014-10-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device |
| WO2012121265A1 (en) * | 2011-03-10 | 2012-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and method for manufacturing the same |
| US9935622B2 (en) | 2011-04-28 | 2018-04-03 | Semiconductor Energy Laboratory Co., Ltd. | Comparator and semiconductor device including comparator |
| JP5890251B2 (ja) | 2011-06-08 | 2016-03-22 | 株式会社半導体エネルギー研究所 | 通信方法 |
| WO2012169449A1 (en) * | 2011-06-08 | 2012-12-13 | Semiconductor Energy Laboratory Co., Ltd. | Sputtering target, method for manufacturing sputtering target, and method for forming thin film |
| TWI563640B (en) * | 2014-08-22 | 2016-12-21 | Innolux Corp | Array substrate of display panel |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4646266A (en) * | 1984-09-28 | 1987-02-24 | Energy Conversion Devices, Inc. | Programmable semiconductor structures and methods for using the same |
| JP4790925B2 (ja) * | 2001-03-30 | 2011-10-12 | 富士通セミコンダクター株式会社 | アドレス発生回路 |
| JP2003151294A (ja) * | 2001-08-29 | 2003-05-23 | Matsushita Electric Ind Co Ltd | プログラム値判定回路、それを有する半導体集積回路装置、およびプログラム値判定方法 |
| JP3857573B2 (ja) * | 2001-11-20 | 2006-12-13 | 富士通株式会社 | ヒューズ回路 |
| JP4177329B2 (ja) * | 2002-08-29 | 2008-11-05 | 株式会社ルネサステクノロジ | 半導体処理装置及びｉｃカード |
| JP4481632B2 (ja) * | 2003-12-19 | 2010-06-16 | 株式会社半導体エネルギー研究所 | 薄膜集積回路 |
| JP4836466B2 (ja) * | 2004-02-06 | 2011-12-14 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP4718850B2 (ja) * | 2004-02-12 | 2011-07-06 | 株式会社半導体エネルギー研究所 | 半導体装置、ｉｃカード、ｉｃタグ、ｒｆｉｄ、トランスポンダ、紙幣、有価証券、パスポート、電子機器、バッグ及び衣類 |
| DE602005005038T2 (de) * | 2004-04-14 | 2009-03-12 | Matsushita Electric Industrial Co., Ltd., Kadoma | Kontaktlose karte |
-
2006
- 2006-12-20 JP JP2006342689A patent/JP2007201437A/ja not_active Withdrawn
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