JP2006165535A5 - - Google Patents
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- Publication number
- JP2006165535A5 JP2006165535A5 JP2005327968A JP2005327968A JP2006165535A5 JP 2006165535 A5 JP2006165535 A5 JP 2006165535A5 JP 2005327968 A JP2005327968 A JP 2005327968A JP 2005327968 A JP2005327968 A JP 2005327968A JP 2006165535 A5 JP2006165535 A5 JP 2006165535A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- transistor
- conductive layer
- conductive
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000010410 layer Substances 0.000 claims 186
- 239000004065 semiconductor Substances 0.000 claims 27
- 230000015572 biosynthetic process Effects 0.000 claims 22
- 239000002245 particle Substances 0.000 claims 18
- 239000012790 adhesive layer Substances 0.000 claims 14
- 239000011229 interlayer Substances 0.000 claims 13
- 150000002894 organic compounds Chemical class 0.000 claims 13
- 239000000758 substrate Substances 0.000 claims 9
- 239000000463 material Substances 0.000 claims 8
- 230000006870 function Effects 0.000 claims 6
- 229910052714 tellurium Inorganic materials 0.000 claims 4
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims 4
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims 3
- 229910052787 antimony Inorganic materials 0.000 claims 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims 3
- 229910052711 selenium Inorganic materials 0.000 claims 3
- 239000011669 selenium Substances 0.000 claims 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 2
- 239000013078 crystal Substances 0.000 claims 2
- 229910052738 indium Inorganic materials 0.000 claims 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 2
- 229910052709 silver Inorganic materials 0.000 claims 2
- 239000004332 silver Substances 0.000 claims 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229910052797 bismuth Inorganic materials 0.000 claims 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims 1
- 229910017052 cobalt Inorganic materials 0.000 claims 1
- 239000010941 cobalt Substances 0.000 claims 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 1
- 229920000547 conjugated polymer Polymers 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 claims 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 230000005525 hole transport Effects 0.000 claims 1
- 238000009413 insulation Methods 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 230000003287 optical effect Effects 0.000 claims 1
- 239000002861 polymer material Substances 0.000 claims 1
- 229910052717 sulfur Inorganic materials 0.000 claims 1
- 239000011593 sulfur Substances 0.000 claims 1
- 229910052716 thallium Inorganic materials 0.000 claims 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
- 229910052718 tin Inorganic materials 0.000 claims 1
- 239000011135 tin Substances 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- 239000011701 zinc Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005327968A JP2006165535A (ja) | 2004-11-11 | 2005-11-11 | 半導体装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004328298 | 2004-11-11 | ||
| JP2004328295 | 2004-11-11 | ||
| JP2005327968A JP2006165535A (ja) | 2004-11-11 | 2005-11-11 | 半導体装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012151283A Division JP5622799B2 (ja) | 2004-11-11 | 2012-07-05 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006165535A JP2006165535A (ja) | 2006-06-22 |
| JP2006165535A5 true JP2006165535A5 (enExample) | 2008-12-11 |
Family
ID=36667146
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005327968A Withdrawn JP2006165535A (ja) | 2004-11-11 | 2005-11-11 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2006165535A (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5204959B2 (ja) | 2006-06-26 | 2013-06-05 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP5354884B2 (ja) * | 2006-10-19 | 2013-11-27 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2008166420A (ja) * | 2006-12-27 | 2008-07-17 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| JP5286826B2 (ja) | 2007-03-28 | 2013-09-11 | 凸版印刷株式会社 | 薄膜トランジスタアレイ、薄膜トランジスタアレイの製造方法、およびアクティブマトリスクディスプレイ |
| JP2009016368A (ja) * | 2007-06-29 | 2009-01-22 | Ricoh Co Ltd | メモリーデバイス |
| JP5016699B2 (ja) | 2009-12-16 | 2012-09-05 | シャープ株式会社 | 不揮発性半導体記憶装置及びその製造方法 |
| TWI541981B (zh) * | 2010-11-12 | 2016-07-11 | 半導體能源研究所股份有限公司 | 半導體裝置 |
| CN111180583A (zh) * | 2019-10-15 | 2020-05-19 | 北京元芯碳基集成电路研究院 | 晶体管及其制造方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001345431A (ja) * | 2000-05-31 | 2001-12-14 | Japan Science & Technology Corp | 有機強誘電体薄膜及び半導体デバイス |
| JP4434527B2 (ja) * | 2001-08-08 | 2010-03-17 | 株式会社東芝 | 半導体記憶装置 |
| JP2003243631A (ja) * | 2002-02-18 | 2003-08-29 | Mitsubishi Electric Corp | 薄膜磁性体記憶装置ならびにそれを用いた無線チップ、流通管理システムおよび製造工程管理システム |
| JP4671600B2 (ja) * | 2002-12-27 | 2011-04-20 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4585209B2 (ja) * | 2003-03-19 | 2010-11-24 | 大日本印刷株式会社 | 有機双安定性メモリ装置 |
-
2005
- 2005-11-11 JP JP2005327968A patent/JP2006165535A/ja not_active Withdrawn
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