JP2006165535A - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP2006165535A
JP2006165535A JP2005327968A JP2005327968A JP2006165535A JP 2006165535 A JP2006165535 A JP 2006165535A JP 2005327968 A JP2005327968 A JP 2005327968A JP 2005327968 A JP2005327968 A JP 2005327968A JP 2006165535 A JP2006165535 A JP 2006165535A
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JP
Japan
Prior art keywords
layer
conductive layer
conductive
transistor
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2005327968A
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English (en)
Japanese (ja)
Other versions
JP2006165535A5 (enExample
Inventor
Hiroko Abe
寛子 安部
Mikio Yugawa
幹央 湯川
Ryoji Nomura
亮二 野村
Shunpei Yamazaki
舜平 山崎
Yukie Suzuki
幸恵 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2005327968A priority Critical patent/JP2006165535A/ja
Publication of JP2006165535A publication Critical patent/JP2006165535A/ja
Publication of JP2006165535A5 publication Critical patent/JP2006165535A5/ja
Withdrawn legal-status Critical Current

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  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP2005327968A 2004-11-11 2005-11-11 半導体装置 Withdrawn JP2006165535A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005327968A JP2006165535A (ja) 2004-11-11 2005-11-11 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004328298 2004-11-11
JP2004328295 2004-11-11
JP2005327968A JP2006165535A (ja) 2004-11-11 2005-11-11 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012151283A Division JP5622799B2 (ja) 2004-11-11 2012-07-05 半導体装置

Publications (2)

Publication Number Publication Date
JP2006165535A true JP2006165535A (ja) 2006-06-22
JP2006165535A5 JP2006165535A5 (enExample) 2008-12-11

Family

ID=36667146

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005327968A Withdrawn JP2006165535A (ja) 2004-11-11 2005-11-11 半導体装置

Country Status (1)

Country Link
JP (1) JP2006165535A (enExample)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008004893A (ja) * 2006-06-26 2008-01-10 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の作製方法
JP2008124448A (ja) * 2006-10-19 2008-05-29 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の作製方法
JP2008166420A (ja) * 2006-12-27 2008-07-17 Semiconductor Energy Lab Co Ltd 半導体装置
JP2009016368A (ja) * 2007-06-29 2009-01-22 Ricoh Co Ltd メモリーデバイス
JP2011146666A (ja) * 2009-12-16 2011-07-28 Sharp Corp 不揮発性半導体記憶装置及びその製造方法
US8164700B2 (en) 2007-03-28 2012-04-24 Toppan Printing Co., Ltd. Thin film transistor array, method for manufacturing the same and active matrix display
JP2016192578A (ja) * 2010-11-12 2016-11-10 株式会社半導体エネルギー研究所 半導体装置
CN111180583A (zh) * 2019-10-15 2020-05-19 北京元芯碳基集成电路研究院 晶体管及其制造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001345431A (ja) * 2000-05-31 2001-12-14 Japan Science & Technology Corp 有機強誘電体薄膜及び半導体デバイス
JP2003060165A (ja) * 2001-08-08 2003-02-28 Toshiba Corp 半導体記憶装置
JP2003243631A (ja) * 2002-02-18 2003-08-29 Mitsubishi Electric Corp 薄膜磁性体記憶装置ならびにそれを用いた無線チップ、流通管理システムおよび製造工程管理システム
JP2004221570A (ja) * 2002-12-27 2004-08-05 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2004304179A (ja) * 2003-03-19 2004-10-28 Dainippon Printing Co Ltd 有機双安定性素子、これを用いた有機双安定性メモリ装置、およびそれらの駆動方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001345431A (ja) * 2000-05-31 2001-12-14 Japan Science & Technology Corp 有機強誘電体薄膜及び半導体デバイス
JP2003060165A (ja) * 2001-08-08 2003-02-28 Toshiba Corp 半導体記憶装置
JP2003243631A (ja) * 2002-02-18 2003-08-29 Mitsubishi Electric Corp 薄膜磁性体記憶装置ならびにそれを用いた無線チップ、流通管理システムおよび製造工程管理システム
JP2004221570A (ja) * 2002-12-27 2004-08-05 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2004304179A (ja) * 2003-03-19 2004-10-28 Dainippon Printing Co Ltd 有機双安定性素子、これを用いた有機双安定性メモリ装置、およびそれらの駆動方法

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101517525B1 (ko) * 2006-06-26 2015-05-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 및 반도체장치 제조방법
US8432018B2 (en) 2006-06-26 2013-04-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of semiconductor device
US8648439B2 (en) 2006-06-26 2014-02-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of semiconductor device
JP2008004893A (ja) * 2006-06-26 2008-01-10 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の作製方法
KR101517943B1 (ko) 2006-06-26 2015-05-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 및 반도체장치 제조방법
JP2008124448A (ja) * 2006-10-19 2008-05-29 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の作製方法
JP2008166420A (ja) * 2006-12-27 2008-07-17 Semiconductor Energy Lab Co Ltd 半導体装置
US8164700B2 (en) 2007-03-28 2012-04-24 Toppan Printing Co., Ltd. Thin film transistor array, method for manufacturing the same and active matrix display
JP2009016368A (ja) * 2007-06-29 2009-01-22 Ricoh Co Ltd メモリーデバイス
JP2011146666A (ja) * 2009-12-16 2011-07-28 Sharp Corp 不揮発性半導体記憶装置及びその製造方法
US8450145B2 (en) 2009-12-16 2013-05-28 Sharp Kabushiki Kaisha Nonvolatile semiconductor memory device and method for producing the same
JP2016192578A (ja) * 2010-11-12 2016-11-10 株式会社半導体エネルギー研究所 半導体装置
CN111180583A (zh) * 2019-10-15 2020-05-19 北京元芯碳基集成电路研究院 晶体管及其制造方法

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