JP2001244424A5 - - Google Patents

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Publication number
JP2001244424A5
JP2001244424A5 JP2000052436A JP2000052436A JP2001244424A5 JP 2001244424 A5 JP2001244424 A5 JP 2001244424A5 JP 2000052436 A JP2000052436 A JP 2000052436A JP 2000052436 A JP2000052436 A JP 2000052436A JP 2001244424 A5 JP2001244424 A5 JP 2001244424A5
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JP
Japan
Prior art keywords
field effect
effect transistor
insulating film
gate electrode
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000052436A
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English (en)
Japanese (ja)
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JP2001244424A (ja
JP4068781B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2000052436A external-priority patent/JP4068781B2/ja
Priority to JP2000052436A priority Critical patent/JP4068781B2/ja
Priority to TW089124195A priority patent/TW473988B/zh
Priority to US09/791,832 priority patent/US6420754B2/en
Priority to KR1020010010113A priority patent/KR100549475B1/ko
Priority to US09/811,598 priority patent/US6423584B2/en
Publication of JP2001244424A publication Critical patent/JP2001244424A/ja
Publication of JP2001244424A5 publication Critical patent/JP2001244424A5/ja
Publication of JP4068781B2 publication Critical patent/JP4068781B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2000052436A 2000-02-28 2000-02-28 半導体集積回路装置および半導体集積回路装置の製造方法 Expired - Fee Related JP4068781B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2000052436A JP4068781B2 (ja) 2000-02-28 2000-02-28 半導体集積回路装置および半導体集積回路装置の製造方法
TW089124195A TW473988B (en) 2000-02-28 2000-11-15 Semiconductor integrated circuit device and manufacturing method of the same
US09/791,832 US6420754B2 (en) 2000-02-28 2001-02-26 Semiconductor integrated circuit device
KR1020010010113A KR100549475B1 (ko) 2000-02-28 2001-02-27 반도체 집적 회로 장치 및 반도체 집적 회로 장치의 제조방법
US09/811,598 US6423584B2 (en) 2000-02-28 2001-03-20 method for forming capacitors and field effect transistors in a semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000052436A JP4068781B2 (ja) 2000-02-28 2000-02-28 半導体集積回路装置および半導体集積回路装置の製造方法

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2005107055A Division JP2005260253A (ja) 2005-04-04 2005-04-04 半導体集積回路装置およびその製造方法
JP2006325511A Division JP2007123917A (ja) 2006-12-01 2006-12-01 半導体集積回路装置の製造方法

Publications (3)

Publication Number Publication Date
JP2001244424A JP2001244424A (ja) 2001-09-07
JP2001244424A5 true JP2001244424A5 (enExample) 2005-09-15
JP4068781B2 JP4068781B2 (ja) 2008-03-26

Family

ID=18573949

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000052436A Expired - Fee Related JP4068781B2 (ja) 2000-02-28 2000-02-28 半導体集積回路装置および半導体集積回路装置の製造方法

Country Status (4)

Country Link
US (2) US6420754B2 (enExample)
JP (1) JP4068781B2 (enExample)
KR (1) KR100549475B1 (enExample)
TW (1) TW473988B (enExample)

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JP3920827B2 (ja) * 2003-09-08 2007-05-30 三洋電機株式会社 半導体記憶装置
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JP2006164998A (ja) * 2004-12-02 2006-06-22 Renesas Technology Corp 半導体装置およびその製造方法
JP2005260253A (ja) * 2005-04-04 2005-09-22 Renesas Technology Corp 半導体集積回路装置およびその製造方法
US7247907B2 (en) * 2005-05-20 2007-07-24 Silicon Storage Technology, Inc. Bidirectional split gate NAND flash memory structure and array, method of programming, erasing and reading thereof, and method of manufacturing
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JP2006351789A (ja) * 2005-06-15 2006-12-28 Toshiba Corp 半導体集積回路装置
KR100618903B1 (ko) * 2005-06-18 2006-09-01 삼성전자주식회사 독립된 전원 장치를 구비하는 반도체 집적 회로와 반도체집적 회로를 구비하는 반도체 시스템 및 반도체 집적 회로형성 방법
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US7528436B2 (en) * 2006-09-05 2009-05-05 Catalyst Semiconductor, Inc. Scalable electrically eraseable and programmable memory
US8750041B2 (en) 2006-09-05 2014-06-10 Semiconductor Components Industries, Llc Scalable electrically erasable and programmable memory
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KR100854861B1 (ko) * 2006-12-27 2008-08-28 주식회사 하이닉스반도체 비휘발성 메모리 소자 및 그 제조 방법
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JP2014103204A (ja) 2012-11-19 2014-06-05 Renesas Electronics Corp 半導体装置の製造方法および半導体装置
US8685817B1 (en) * 2012-11-19 2014-04-01 International Business Machines Corporation Metal gate structures for CMOS transistor devices having reduced parasitic capacitance
JP6215645B2 (ja) * 2012-11-28 2017-10-18 ルネサスエレクトロニクス株式会社 半導体集積回路
JP2015060895A (ja) * 2013-09-17 2015-03-30 株式会社東芝 半導体装置
US9658278B2 (en) * 2014-01-24 2017-05-23 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for high voltage device crystal defect detection
US9299697B2 (en) * 2014-05-15 2016-03-29 Texas Instruments Incorporated High breakdown voltage microelectronic device isolation structure with improved reliability
US10147784B2 (en) 2014-05-15 2018-12-04 Texas Instruments Incorporated High voltage galvanic isolation device
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