JP2024083377A5 - - Google Patents
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- JP2024083377A5 JP2024083377A5 JP2024050247A JP2024050247A JP2024083377A5 JP 2024083377 A5 JP2024083377 A5 JP 2024083377A5 JP 2024050247 A JP2024050247 A JP 2024050247A JP 2024050247 A JP2024050247 A JP 2024050247A JP 2024083377 A5 JP2024083377 A5 JP 2024083377A5
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- wiring
- memory cell
- drain
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
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Applications Claiming Priority (12)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019011690 | 2019-01-25 | ||
| JP2019011688 | 2019-01-25 | ||
| JP2019011691 | 2019-01-25 | ||
| JP2019011692 | 2019-01-25 | ||
| JP2019011691 | 2019-01-25 | ||
| JP2019011688 | 2019-01-25 | ||
| JP2019011690 | 2019-01-25 | ||
| JP2019011692 | 2019-01-25 | ||
| JP2019013505 | 2019-01-29 | ||
| JP2019013505 | 2019-01-29 | ||
| PCT/IB2019/059906 WO2020152522A1 (ja) | 2019-01-25 | 2019-11-19 | 半導体装置および当該半導体装置を有する電気機器 |
| JP2020567657A JP7462575B2 (ja) | 2019-01-25 | 2019-11-19 | 半導体装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020567657A Division JP7462575B2 (ja) | 2019-01-25 | 2019-11-19 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2024083377A JP2024083377A (ja) | 2024-06-21 |
| JP2024083377A5 true JP2024083377A5 (enExample) | 2024-07-30 |
Family
ID=71736829
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020567657A Active JP7462575B2 (ja) | 2019-01-25 | 2019-11-19 | 半導体装置 |
| JP2024050247A Withdrawn JP2024083377A (ja) | 2019-01-25 | 2024-03-26 | 半導体装置 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020567657A Active JP7462575B2 (ja) | 2019-01-25 | 2019-11-19 | 半導体装置 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US12426378B2 (enExample) |
| JP (2) | JP7462575B2 (enExample) |
| KR (1) | KR20210120003A (enExample) |
| CN (1) | CN113330552A (enExample) |
| TW (2) | TW202537448A (enExample) |
| WO (1) | WO2020152522A1 (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7330986B2 (ja) * | 2018-08-31 | 2023-08-22 | 株式会社半導体エネルギー研究所 | 半導体装置及び半導体装置の動作方法 |
| US12225705B2 (en) | 2019-02-22 | 2025-02-11 | Semiconductor Energy Laboratory Co., Ltd. | Memory device having error detection function, semiconductor device, and electronic device |
| KR20220050134A (ko) | 2019-08-22 | 2022-04-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 메모리 셀 및 기억 장치 |
| CN115274664B (zh) * | 2021-04-30 | 2025-09-16 | 华为技术有限公司 | 一种三维存储器、芯片封装结构及电子设备 |
| TWI807494B (zh) * | 2021-11-19 | 2023-07-01 | 鯨鏈科技股份有限公司 | 晶圓對晶圓技術之輸入及輸出電路與使用其晶片裝置 |
| US12014796B2 (en) * | 2022-02-11 | 2024-06-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory device and method of operating the same |
| WO2023242665A1 (ja) | 2022-06-16 | 2023-12-21 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| CN115103510A (zh) * | 2022-06-20 | 2022-09-23 | 山东大学 | 对称内植压电智能层的复合材料智能结构及其制备方法 |
| CN117352489A (zh) | 2022-06-21 | 2024-01-05 | 长鑫存储技术有限公司 | 半导体结构及其制造方法、存储芯片、电子设备 |
| US20240032281A1 (en) * | 2022-07-20 | 2024-01-25 | Invention And Collaboration Laboratory Pte. Ltd. | Memory cell structure |
| TW202431604A (zh) * | 2022-09-09 | 2024-08-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
| WO2024079575A1 (ja) | 2022-10-13 | 2024-04-18 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| WO2024089570A1 (ja) * | 2022-10-28 | 2024-05-02 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| CN116863974B (zh) * | 2023-09-05 | 2023-11-21 | 北京超弦存储器研究院 | 半导体器件及电子设备 |
| WO2025219839A1 (ja) * | 2024-04-19 | 2025-10-23 | 株式会社半導体エネルギー研究所 | 半導体装置及びその駆動方法 |
| CN118314936B (zh) * | 2024-06-06 | 2024-09-06 | 北京超弦存储器研究院 | 存储器及访问方法、电子设备 |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3603229B2 (ja) | 1994-02-09 | 2004-12-22 | 富士通株式会社 | 半導体記憶装置 |
| JP2000312005A (ja) | 1999-02-26 | 2000-11-07 | Seiko Epson Corp | 半導体装置の製造方法及び電気光学装置の製造方法並びに半導体装置及び電気光学装置 |
| JP3399432B2 (ja) | 1999-02-26 | 2003-04-21 | セイコーエプソン株式会社 | 電気光学装置の製造方法及び電気光学装置 |
| US6687147B2 (en) | 2002-04-02 | 2004-02-03 | Hewlett-Packard Development Company, L.P. | Cubic memory array with diagonal select lines |
| US6643159B2 (en) | 2002-04-02 | 2003-11-04 | Hewlett-Packard Development Company, L.P. | Cubic memory array |
| WO2012029638A1 (en) | 2010-09-03 | 2012-03-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP2012256821A (ja) | 2010-09-13 | 2012-12-27 | Semiconductor Energy Lab Co Ltd | 記憶装置 |
| TWI539453B (zh) | 2010-09-14 | 2016-06-21 | 半導體能源研究所股份有限公司 | 記憶體裝置和半導體裝置 |
| TWI574259B (zh) | 2010-09-29 | 2017-03-11 | 半導體能源研究所股份有限公司 | 半導體記憶體裝置和其驅動方法 |
| TWI541981B (zh) | 2010-11-12 | 2016-07-11 | 半導體能源研究所股份有限公司 | 半導體裝置 |
| US8513773B2 (en) | 2011-02-02 | 2013-08-20 | Semiconductor Energy Laboratory Co., Ltd. | Capacitor and semiconductor device including dielectric and N-type semiconductor |
| JP2013065638A (ja) * | 2011-09-15 | 2013-04-11 | Elpida Memory Inc | 半導体装置 |
| KR102107591B1 (ko) | 2012-07-18 | 2020-05-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 기억 소자 및 프로그래머블 로직 디바이스 |
| JP6347704B2 (ja) | 2013-09-18 | 2018-06-27 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9653611B2 (en) | 2014-03-07 | 2017-05-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP6560508B2 (ja) | 2014-03-13 | 2019-08-14 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| TWI767772B (zh) | 2014-04-10 | 2022-06-11 | 日商半導體能源研究所股份有限公司 | 記憶體裝置及半導體裝置 |
| WO2015170220A1 (en) | 2014-05-09 | 2015-11-12 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and electronic device |
| US9583177B2 (en) | 2014-12-10 | 2017-02-28 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and semiconductor device including memory device |
| US9589611B2 (en) | 2015-04-01 | 2017-03-07 | Semiconductor Energy Laboratory Co., Ltd. | Memory device, semiconductor device, and electronic device |
| US9728243B2 (en) * | 2015-05-11 | 2017-08-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device or electronic component including the same |
| US9627034B2 (en) | 2015-05-15 | 2017-04-18 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device |
-
2019
- 2019-11-15 TW TW113142890A patent/TW202537448A/zh unknown
- 2019-11-15 TW TW108141513A patent/TWI863940B/zh active
- 2019-11-19 JP JP2020567657A patent/JP7462575B2/ja active Active
- 2019-11-19 KR KR1020217024567A patent/KR20210120003A/ko active Pending
- 2019-11-19 CN CN201980089579.4A patent/CN113330552A/zh active Pending
- 2019-11-19 US US17/422,312 patent/US12426378B2/en active Active
- 2019-11-19 WO PCT/IB2019/059906 patent/WO2020152522A1/ja not_active Ceased
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2024
- 2024-03-26 JP JP2024050247A patent/JP2024083377A/ja not_active Withdrawn