JP7462575B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP7462575B2 JP7462575B2 JP2020567657A JP2020567657A JP7462575B2 JP 7462575 B2 JP7462575 B2 JP 7462575B2 JP 2020567657 A JP2020567657 A JP 2020567657A JP 2020567657 A JP2020567657 A JP 2020567657A JP 7462575 B2 JP7462575 B2 JP 7462575B2
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- transistor
- oxide
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Images
Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
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Description
本発明の一態様である半導体装置、および半導体装置の動作方法の構成例について、図1乃至図5を参照して説明する。
本発明の一態様である半導体装置の構成例について、図6乃至図10を参照して説明する。実施の形態1と同じ符号を付した構成については、実施の形態1の説明を援用し、説明を省略する場合がある。
本発明の一態様である半導体装置の構成例について、図11乃至図24を参照して説明する。実施の形態1と同じ符号を付した構成については、実施の形態1の説明を援用し、説明を省略する場合がある。
本発明の一態様である半導体装置、および半導体装置の動作方法の構成例について、図25乃至図29を参照して説明する。実施の形態1と同じ符号を付した構成については、実施の形態1の説明を援用し、説明を省略する場合がある。
本実施の形態では、上記実施の形態1で説明した半導体装置10に適用可能な回路の変形例について、図30を参照して説明する。
本実施の形態では、上記実施の形態2で説明した半導体装置10Aに適用可能な回路の変形例について、図31を参照して説明する。
本実施の形態では、上記実施の形態3で説明した半導体装置10Bに適用可能な回路の変形例について、図32を参照して説明する。
本実施の形態では、上記実施の形態4で説明した半導体装置に適用可能な回路の変形例について、図33を参照して説明する。
以下では、本発明の一態様に係る記憶装置として機能する半導体装置の一例について説明する。
そこで、外部からの不純物混入を抑制するために、不純物の拡散を抑制する材料(以下、不純物に対するバリア性材料ともいう)を用いて、トランジスタ200を封止するとよい。
図35(A)を用いて、トランジスタ層413が有するトランジスタ200T、およびメモリデバイス420が有するトランジスタ200Mに用いることができるトランジスタ200について説明する。
酸化物230として、酸化物半導体として機能する金属酸化物を用いることが好ましい。以下では、本発明に係る酸化物230に適用可能な金属酸化物について説明する。
図35(B)を用いてトランジスタ300を説明する。トランジスタ300は、半導体基板311上に設けられ、ゲートとして機能する導電体316、ゲート絶縁体として機能する絶縁体315、半導体基板311の一部からなる半導体領域313、およびソース領域またはドレイン領域として機能する低抵抗領域314a、および低抵抗領域314bを有する。トランジスタ300は、pチャネル型、あるいはnチャネル型のいずれでもよい。
次に、図36(A)を用いて、図34に示すメモリデバイス420について説明する。なお、メモリデバイス420が有するトランジスタ200Mについて、トランジスタ200と重複する説明は省略する。
次に、図36(B)を用いて、メモリデバイス420の変形例として、メモリデバイス420Aを説明する。メモリデバイス420Aは、トランジスタ200Mと、トランジスタ200Mと電気的に接続する容量素子292Aを有する。容量素子292Aは、トランジスタ200Mの下方に設けられる。
次に、図36(C)を用いて、メモリデバイス420の変形例として、メモリデバイス420Bを説明する。メモリデバイス420Bは、トランジスタ200Mと、トランジスタ200Mと電気的に接続する容量素子292Bを有する。容量素子292Bは、トランジスタ200Mの上方に設けられる。
図34において一点鎖線で囲んだ領域422にて、メモリデバイス420は、導電体424および導電体205を介してトランジスタ200Tのゲートと電気的に接続されているが、本実施の形態はこれに限らない。
本実施の形態では、上記の実施の形態で説明したOSトランジスタに用いることができる金属酸化物(以下、酸化物半導体ともいう。)について説明する。
まず、酸化物半導体における、結晶構造の分類について、図41(A)を用いて説明を行う。図41(A)は、酸化物半導体、代表的にはIGZO(Inと、Gaと、Znと、を含む金属酸化物)の結晶構造の分類を説明する図である。
なお、酸化物半導体は、結晶構造に着目した場合、図41(A)とは異なる分類となる場合がある。例えば、酸化物半導体は、単結晶酸化物半導体と、それ以外の非単結晶酸化物半導体と、に分けられる。非単結晶酸化物半導体としては、例えば、上述のCAAC-OS、及びnc-OSがある。また、非単結晶酸化物半導体には、多結晶酸化物半導体、擬似非晶質酸化物半導体(a-like OS:amorphous-like oxide semiconductor)、非晶質酸化物半導体、などが含まれる。
CAAC-OSは、複数の結晶領域を有し、当該複数の結晶領域はc軸が特定の方向に配向している酸化物半導体である。なお、特定の方向とは、CAAC-OS膜の厚さ方向、CAAC-OS膜の被形成面の法線方向、またはCAAC-OS膜の表面の法線方向である。また、結晶領域とは、原子配列に周期性を有する領域である。なお、原子配列を格子配列とみなすと、結晶領域とは、格子配列の揃った領域でもある。さらに、CAAC-OSは、a-b面方向において複数の結晶領域が連結する領域を有し、当該領域は歪みを有する場合がある。なお、歪みとは、複数の結晶領域が連結する領域において、格子配列の揃った領域と、別の格子配列の揃った領域と、の間で格子配列の向きが変化している箇所を指す。つまり、CAAC-OSは、c軸配向し、a-b面方向には明らかな配向をしていない酸化物半導体である。
nc-OSは、微小な領域(例えば、1nm以上10nm以下の領域、特に1nm以上3nm以下の領域)において原子配列に周期性を有する。別言すると、nc-OSは、微小な結晶を有する。なお、当該微小な結晶の大きさは、例えば、1nm以上10nm以下、特に1nm以上3nm以下であることから、当該微小な結晶をナノ結晶ともいう。また、nc-OSは、異なるナノ結晶間で結晶方位に規則性が見られない。そのため、膜全体で配向性が見られない。したがって、nc-OSは、分析方法によっては、a-like OSや非晶質酸化物半導体と区別が付かない場合がある。例えば、nc-OS膜に対し、XRD装置を用いて構造解析を行うと、θ/2θスキャンを用いたOut-of-plane XRD測定では、結晶性を示すピークが検出されない。また、nc-OS膜に対し、ナノ結晶よりも大きいプローブ径(例えば50nm以上)の電子線を用いる電子線回折(制限視野電子線回折ともいう。)を行うと、ハローパターンのような回折パターンが観測される。一方、nc-OS膜に対し、ナノ結晶の大きさと近いかナノ結晶より小さいプローブ径(例えば1nm以上30nm以下)の電子線を用いる電子線回折(ナノビーム電子線回折ともいう。)を行うと、ダイレクトスポットを中心とするリング状の領域内に複数のスポットが観測される電子線回折パターンが取得される場合がある。
a-like OSは、nc-OSと非晶質酸化物半導体との間の構造を有する酸化物半導体である。a-like OSは、鬆又は低密度領域を有する。即ち、a-like OSは、nc-OS及びCAAC-OSと比べて、結晶性が低い。また、a-like OSは、nc-OS及びCAAC-OSと比べて、膜中の水素濃度が高い。
次に、上述のCAC-OSの詳細について、説明を行う。なお、CAC-OSは材料構成に関する。
CAC-OSとは、例えば、金属酸化物を構成する元素が、0.5nm以上10nm以下、好ましくは、1nm以上3nm以下、またはその近傍のサイズで偏在した材料の一構成である。なお、以下では、金属酸化物において、一つまたは複数の金属元素が偏在し、該金属元素を有する領域が、0.5nm以上10nm以下、好ましくは、1nm以上3nm以下、またはその近傍のサイズで混合した状態をモザイク状、またはパッチ状ともいう。
続いて、上記酸化物半導体をトランジスタに用いる場合について説明する。
ここで、酸化物半導体中における各不純物の影響について説明する。
本実施の形態では、実施の形態1乃至4に記載の半導体装置10、10A、10B、10Fにおける周辺回路20の詳細について説明する。
本実施の形態では、上記実施の形態に示す半導体装置などが組み込まれた電子部品および電子機器の消費電力について説明を行う。
本実施の形態は、上記実施の形態に示す半導体装置などが組み込まれた電子部品および電子機器の一例を示す。
まず、半導体装置10等が組み込まれた電子部品の例を、図45(A)および(B)を用いて説明を行う。
次に、上記電子部品を備えた電子機器の例について図46を用いて説明を行う。
以上の実施の形態、および実施の形態における各構成の説明について、以下に付記する。
Claims (5)
- 第1メモリセルと第2メモリセルとを有する第1の素子層を有し、
第3メモリセルと第4メモリセルとを有する第2の素子層を有し、
前記第1メモリセルを制御する機能と、前記第2メモリセルを制御する機能と、前記第3メモリセルを制御する機能と、前記第4メモリセルを制御する機能と、を有する第3の素子層を有し、
駆動回路を有するシリコン基板を有し、
第1配線と第2配線とを有し、
前記シリコン基板の上に前記第3の素子層が設けられ、
前記第3の素子層の上に前記第1の素子層が設けられ、
前記第1の素子層の上に前記第2の素子層が設けられ、
前記第1メモリセルは、第1トランジスタと、第1キャパシタと、を有し、
前記第2メモリセルは、第2トランジスタと、第2キャパシタと、を有し、
前記第3メモリセルは、第3トランジスタと、第3キャパシタと、を有し、
前記第4メモリセルは、第4トランジスタと、第4キャパシタと、を有し、
前記第3の素子層は、第5トランジスタを有し、
前記駆動回路は、第6トランジスタを有し、
前記第1配線は、前記第1トランジスタのソース又はドレインの一方、前記第2トランジスタのソース又はドレインの一方、前記第3トランジスタのソース又はドレインの一方、および前記第4トランジスタのソース又はドレインの一方と電気的に接続され、
前記第1配線は、前記第5トランジスタのゲートと電気的に接続され、
前記第2配線は、前記第5トランジスタのソース又はドレインの一方と電気的に接続され、
前記第2配線は、前記第6トランジスタのソース又はドレインの一方と電気的に接続され、
前記第1配線は、前記第1トランジスタのチャネル形成領域及び前記第2トランジスタのチャネル形成領域を有する第1半導体層および前記第3トランジスタのチャネル形成領域及び前記第4トランジスタのチャネル形成領域を有する第2半導体層に接し、且つ前記シリコン基板の表面に対して垂直方向または概略垂直方向に設けられ、
前記第1半導体層および前記第2半導体層は、それぞれチャネル形成領域にInと、Gaと、Znと、を含む金属酸化物を有し、
前記第2配線は、前記シリコン基板の表面に対して垂直方向または概略垂直方向に設けられる、半導体装置。 - 請求項1において、
第7メモリセルと第8メモリセルとを有する第4の素子層と、を有し、
第9メモリセルと第10メモリセルとを有する第5の素子層と、を有し、
前記第7メモリセルを制御する機能と、前記第8メモリセルを制御する機能と、前記第9メモリセルを制御する機能と、前記第10メモリセルを制御する機能と、を有する第6の素子層を有し、
前記第2の素子層の上に前記第6の素子層が設けられ、
前記第6の素子層の上に前記第4の素子層が設けられ、
前記第4の素子層の上に前記第5の素子層が設けられ、
前記第7メモリセルは、第7トランジスタと、第7キャパシタと、を有し、
前記第8メモリセルは、第8トランジスタと、第8キャパシタと、を有し、
前記第9メモリセルは、第9トランジスタと、第9キャパシタと、を有し、
前記第10メモリセルは、第10トランジスタと、第10キャパシタと、を有し、
前記第6の素子層は、第11トランジスタを有し、
第3配線が設けられ、
前記第3配線は、前記第7トランジスタのソース又はドレインの一方、前記第8トランジスタのソース又はドレインの一方、前記第9トランジスタのソース又はドレインの一方、および前記第10トランジスタのソース又はドレインの一方と電気的に接続され、
前記第3配線は、前記第11トランジスタのゲートと電気的に接続され、
前記第2配線は、前記第11トランジスタのソース又はドレインの一方と電気的に接続され、
前記第3配線は、前記第7トランジスタのチャネル形成領域及び前記第8トランジスタのチャネル形成領域を有する第3半導体層および前記第9トランジスタのチャネル形成領域及び前記第10トランジスタのチャネル形成領域を有する第4半導体層に接し、且つ前記シリコン基板の表面に対して垂直方向または概略垂直方向に設けられ、
前記第3半導体層および前記第4半導体層は、それぞれチャネル形成領域にInと、Gaと、Znと、を含む金属酸化物を有する、半導体装置。 - 請求項1又は2において、
前記第1キャパシタは、前記第1半導体層の下層に設けられ、
前記第3キャパシタは、前記第2半導体層の下層に設けられる、半導体装置。 - 請求項1又は2において、
前記第1キャパシタは、前記第1半導体層の上層に設けられ、
前記第3キャパシタは、前記第2半導体層の上層に設けられる、半導体装置。 - 請求項1又は2において、
前記第1キャパシタの一方の電極は、前記第1半導体層と同じ層に設けられ、
前記第3キャパシタの一方の電極は、前記第2半導体層と同じ層に設けられる、半導体装置。
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JP2004056140A (ja) | 2002-07-23 | 2004-02-19 | Hewlett-Packard Development Co Lp | キュービック・メモリ・アレイ |
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