JP2000022004A5 - - Google Patents
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- Publication number
- JP2000022004A5 JP2000022004A5 JP1998161365A JP16136598A JP2000022004A5 JP 2000022004 A5 JP2000022004 A5 JP 2000022004A5 JP 1998161365 A JP1998161365 A JP 1998161365A JP 16136598 A JP16136598 A JP 16136598A JP 2000022004 A5 JP2000022004 A5 JP 2000022004A5
- Authority
- JP
- Japan
- Prior art keywords
- gate electrode
- floating gate
- active layer
- semiconductor active
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 20
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 claims 18
- 239000010410 layer Substances 0.000 claims 14
- 239000000758 substrate Substances 0.000 claims 10
- 239000002356 single layer Substances 0.000 claims 3
- 238000007743 anodising Methods 0.000 claims 2
- 239000011159 matrix material Substances 0.000 claims 2
- 230000001590 oxidative effect Effects 0.000 claims 2
- 239000010407 anodic oxide Substances 0.000 claims 1
- 239000004973 liquid crystal related substance Substances 0.000 claims 1
- 238000004804 winding Methods 0.000 claims 1
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16136598A JP3980178B2 (ja) | 1997-08-29 | 1998-05-25 | 不揮発性メモリおよび半導体装置 |
| US09/138,691 US6323515B1 (en) | 1997-08-29 | 1998-08-24 | Non-volatile memory and semiconductor device |
| KR1019980035081A KR100500301B1 (ko) | 1997-08-29 | 1998-08-28 | 비휘발성메모리및반도체장치 |
| US09/970,719 US6597034B2 (en) | 1997-08-29 | 2001-10-04 | Non-volatile memory and semiconductor device |
| US10/424,575 US6900499B2 (en) | 1997-08-29 | 2003-04-28 | Non-volatile memory and semiconductor device |
| US11/129,795 US7495278B2 (en) | 1997-08-29 | 2005-05-16 | Non-volatile memory and semiconductor device |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24981897 | 1997-08-29 | ||
| JP9-249818 | 1997-08-29 | ||
| JP10-132750 | 1998-04-27 | ||
| JP13275098 | 1998-04-27 | ||
| JP16136598A JP3980178B2 (ja) | 1997-08-29 | 1998-05-25 | 不揮発性メモリおよび半導体装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007075099A Division JP5041839B2 (ja) | 1997-08-29 | 2007-03-22 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000022004A JP2000022004A (ja) | 2000-01-21 |
| JP2000022004A5 true JP2000022004A5 (enExample) | 2005-08-04 |
| JP3980178B2 JP3980178B2 (ja) | 2007-09-26 |
Family
ID=27316575
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16136598A Expired - Fee Related JP3980178B2 (ja) | 1997-08-29 | 1998-05-25 | 不揮発性メモリおよび半導体装置 |
Country Status (3)
| Country | Link |
|---|---|
| US (4) | US6323515B1 (enExample) |
| JP (1) | JP3980178B2 (enExample) |
| KR (1) | KR100500301B1 (enExample) |
Families Citing this family (65)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6667494B1 (en) * | 1997-08-19 | 2003-12-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and semiconductor display device |
| JP3980178B2 (ja) * | 1997-08-29 | 2007-09-26 | 株式会社半導体エネルギー研究所 | 不揮発性メモリおよび半導体装置 |
| JPH11143379A (ja) * | 1997-09-03 | 1999-05-28 | Semiconductor Energy Lab Co Ltd | 半導体表示装置補正システムおよび半導体表示装置の補正方法 |
| US6617648B1 (en) * | 1998-02-25 | 2003-09-09 | Semiconductor Energy Laboratory Co., Ltd. | Projection TV |
| US6469317B1 (en) | 1998-12-18 | 2002-10-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating the same |
| JP2000208771A (ja) * | 1999-01-11 | 2000-07-28 | Hitachi Ltd | 半導体装置、液晶表示装置およびこれらの製造方法 |
| US6531993B1 (en) | 1999-03-05 | 2003-03-11 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix type display device |
| US6690434B1 (en) | 1999-03-15 | 2004-02-10 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix liquid crystal display device |
| KR100333275B1 (ko) * | 1999-05-20 | 2002-04-24 | 구본준, 론 위라하디락사 | 액정표시장치의 tft 및 그 제조방법 |
| JP4700156B2 (ja) * | 1999-09-27 | 2011-06-15 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US7023021B2 (en) * | 2000-02-22 | 2006-04-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
| TW521303B (en) | 2000-02-28 | 2003-02-21 | Semiconductor Energy Lab | Electronic device |
| US6789910B2 (en) | 2000-04-12 | 2004-09-14 | Semiconductor Energy Laboratory, Co., Ltd. | Illumination apparatus |
| KR100821456B1 (ko) | 2000-08-14 | 2008-04-11 | 샌디스크 쓰리디 엘엘씨 | 밀집한 어레이 및 전하 저장 장치와, 그 제조 방법 |
| US7180496B2 (en) | 2000-08-18 | 2007-02-20 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and method of driving the same |
| JP4954400B2 (ja) * | 2000-08-18 | 2012-06-13 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP4954399B2 (ja) * | 2000-08-18 | 2012-06-13 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
| US6509616B2 (en) | 2000-09-29 | 2003-01-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and its manufacturing method |
| TW525216B (en) | 2000-12-11 | 2003-03-21 | Semiconductor Energy Lab | Semiconductor device, and manufacturing method thereof |
| SG111923A1 (en) | 2000-12-21 | 2005-06-29 | Semiconductor Energy Lab | Light emitting device and method of manufacturing the same |
| US7061049B2 (en) * | 2001-06-12 | 2006-06-13 | Kabushiki Kaisha Toshiba | Semiconductor device using SOI device and semiconductor integrated circuit using the semiconductor device |
| US6841813B2 (en) | 2001-08-13 | 2005-01-11 | Matrix Semiconductor, Inc. | TFT mask ROM and method for making same |
| US7488986B2 (en) * | 2001-10-26 | 2009-02-10 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
| US6956240B2 (en) * | 2001-10-30 | 2005-10-18 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
| JP3920649B2 (ja) | 2002-01-31 | 2007-05-30 | 株式会社日立製作所 | 画像表示装置および液晶表示装置 |
| US7148508B2 (en) * | 2002-03-20 | 2006-12-12 | Seiko Epson Corporation | Wiring substrate, electronic device, electro-optical device, and electronic apparatus |
| US7453129B2 (en) | 2002-12-18 | 2008-11-18 | Noble Peak Vision Corp. | Image sensor comprising isolated germanium photodetectors integrated with a silicon substrate and silicon circuitry |
| US7589380B2 (en) * | 2002-12-18 | 2009-09-15 | Noble Peak Vision Corp. | Method for forming integrated circuit utilizing dual semiconductors |
| JP4282985B2 (ja) * | 2002-12-27 | 2009-06-24 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
| US7238963B2 (en) * | 2003-04-28 | 2007-07-03 | Tpo Displays Corp. | Self-aligned LDD thin-film transistor and method of fabricating the same |
| US7335934B2 (en) * | 2003-07-22 | 2008-02-26 | Innovative Silicon S.A. | Integrated circuit device, and method of fabricating same |
| EP2276088B1 (en) | 2003-10-03 | 2018-02-14 | Semiconductor Energy Laboratory Co, Ltd. | Light emitting element, and light emitting device using the light emitting element |
| US20050074914A1 (en) * | 2003-10-06 | 2005-04-07 | Toppoly Optoelectronics Corp. | Semiconductor device and method of fabrication the same |
| US7202523B2 (en) | 2003-11-17 | 2007-04-10 | Micron Technology, Inc. | NROM flash memory devices on ultrathin silicon |
| WO2005064995A1 (en) * | 2003-12-26 | 2005-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element |
| CN1922727B (zh) * | 2004-02-20 | 2011-12-21 | 株式会社半导体能源研究所 | 半导体器件及ic卡、ic标签、rfid、转发器、票据、证券、护照、电子装置、包和外衣的制造方法 |
| US20050258488A1 (en) * | 2004-04-27 | 2005-11-24 | Toppoly Optoelectronics Corp. | Serially connected thin film transistors and fabrication methods thereof |
| KR101251622B1 (ko) * | 2004-09-24 | 2013-04-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광장치 |
| JP4884784B2 (ja) | 2005-01-28 | 2012-02-29 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法及び半導体装置 |
| KR100796592B1 (ko) * | 2005-08-26 | 2008-01-21 | 삼성에스디아이 주식회사 | 박막트랜지스터 및 그 제조 방법 |
| US7986287B2 (en) * | 2005-08-26 | 2011-07-26 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method of driving the same |
| EP1818989A3 (en) * | 2006-02-10 | 2010-12-01 | Semiconductor Energy Laboratory Co., Ltd. | Nonvolatile semiconductor storage device and manufacturing method thereof |
| EP1837900A3 (en) * | 2006-03-21 | 2008-10-15 | Semiconductor Energy Laboratory Co., Ltd. | Nonvolatile semiconductor memory device |
| TWI416738B (zh) * | 2006-03-21 | 2013-11-21 | Semiconductor Energy Lab | 非揮發性半導體記憶體裝置 |
| EP1837917A1 (en) * | 2006-03-21 | 2007-09-26 | Semiconductor Energy Laboratory Co., Ltd. | Nonvolatile semiconductor memory device |
| KR101488516B1 (ko) * | 2006-03-21 | 2015-02-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 불휘발성 반도체 기억장치 |
| US7786526B2 (en) * | 2006-03-31 | 2010-08-31 | Semiconductor Energy Laboratory Co., Ltd. | Nonvolatile semiconductor memory device |
| EP1840947A3 (en) * | 2006-03-31 | 2008-08-13 | Semiconductor Energy Laboratory Co., Ltd. | Nonvolatile semiconductor memory device |
| US7554854B2 (en) * | 2006-03-31 | 2009-06-30 | Semiconductor Energy Laboratory Co., Ltd. | Method for deleting data from NAND type nonvolatile memory |
| JP5132171B2 (ja) * | 2006-03-31 | 2013-01-30 | 株式会社半導体エネルギー研究所 | 不揮発性半導体記憶装置及びその作製方法並びに半導体装置及びその作製方法 |
| US8022460B2 (en) * | 2006-03-31 | 2011-09-20 | Semiconductor Energy Laboratory Co., Ltd. | Nonvolatile semiconductor memory device |
| US8629490B2 (en) | 2006-03-31 | 2014-01-14 | Semiconductor Energy Laboratory Co., Ltd. | Nonvolatile semiconductor storage device with floating gate electrode and control gate electrode |
| US7709307B2 (en) * | 2006-08-24 | 2010-05-04 | Kovio, Inc. | Printed non-volatile memory |
| US7820491B2 (en) * | 2007-01-05 | 2010-10-26 | Freescale Semiconductor, Inc. | Light erasable memory and method therefor |
| US8320191B2 (en) | 2007-08-30 | 2012-11-27 | Infineon Technologies Ag | Memory cell arrangement, method for controlling a memory cell, memory array and electronic device |
| JP5409024B2 (ja) * | 2008-02-15 | 2014-02-05 | 株式会社半導体エネルギー研究所 | 表示装置 |
| WO2010029618A1 (ja) * | 2008-09-10 | 2010-03-18 | 株式会社アドバンテスト | メモリデバイス、メモリデバイスの製造方法、およびデータ書込方法 |
| JP5521495B2 (ja) * | 2009-11-04 | 2014-06-11 | セイコーエプソン株式会社 | 半導体装置用基板、半導体装置及び電子機器 |
| KR20180105252A (ko) * | 2010-09-03 | 2018-09-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 전계 효과 트랜지스터 및 반도체 장치의 제조 방법 |
| US8647919B2 (en) * | 2010-09-13 | 2014-02-11 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting display device and method for manufacturing the same |
| JP6053490B2 (ja) | 2011-12-23 | 2016-12-27 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US9627395B2 (en) | 2015-02-11 | 2017-04-18 | Sandisk Technologies Llc | Enhanced channel mobility three-dimensional memory structure and method of making thereof |
| TWI548039B (zh) * | 2015-03-17 | 2016-09-01 | 力晶科技股份有限公司 | 半導體裝置的製作方法 |
| CN105161423B (zh) * | 2015-09-13 | 2018-03-06 | 华南理工大学 | 一种背沟道刻蚀型氧化物薄膜晶体管的制备方法 |
| US9478495B1 (en) | 2015-10-26 | 2016-10-25 | Sandisk Technologies Llc | Three dimensional memory device containing aluminum source contact via structure and method of making thereof |
Family Cites Families (54)
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| US4065781A (en) * | 1974-06-21 | 1977-12-27 | Westinghouse Electric Corporation | Insulated-gate thin film transistor with low leakage current |
| US4394688A (en) | 1981-08-25 | 1983-07-19 | Hamamatsu Systems, Inc. | Video system having an adjustable digital gamma correction for contrast enhancement |
| JPH0263163A (ja) * | 1988-08-29 | 1990-03-02 | Nec Corp | 不揮発性半導体記憶装置 |
| JPH0265276A (ja) * | 1988-08-31 | 1990-03-05 | Seiko Epson Corp | 記憶装置 |
| JPH0311390A (ja) | 1989-06-08 | 1991-01-18 | Matsushita Electric Ind Co Ltd | 投写型画像表示装置 |
| US5355007A (en) * | 1990-11-23 | 1994-10-11 | Texas Instruments Incorporated | Devices for non-volatile memory, systems and methods |
| JP3060680B2 (ja) | 1990-11-30 | 2000-07-10 | 日本電気株式会社 | 不揮発性半導体記憶装置 |
| US5206749A (en) * | 1990-12-31 | 1993-04-27 | Kopin Corporation | Liquid crystal display having essentially single crystal transistors pixels and driving circuits |
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| JPH05191675A (ja) | 1992-01-14 | 1993-07-30 | Canon Inc | ガンマ補正回路及びそれを用いた撮像装置 |
| JPH05211318A (ja) * | 1992-10-20 | 1993-08-20 | Casio Comput Co Ltd | 薄膜メモリ素子 |
| JP3431647B2 (ja) | 1992-10-30 | 2003-07-28 | 株式会社半導体エネルギー研究所 | 半導体装置とその作製方法およびメモリ装置の作製方法およびレーザードーピング処理方法 |
| JPH06138849A (ja) | 1992-10-30 | 1994-05-20 | Sharp Corp | 液晶映像表示装置 |
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| DE69326749T2 (de) * | 1993-02-17 | 2000-05-11 | Stmicroelectronics S.R.L., Agrate Brianza | Nichtflüchtiger Speicher mit Schutzdiode |
| JP2791858B2 (ja) | 1993-06-25 | 1998-08-27 | 株式会社半導体エネルギー研究所 | 半導体装置作製方法 |
| JPH0786532A (ja) * | 1993-09-17 | 1995-03-31 | Fujitsu Ltd | 半導体装置及びその製造方法 |
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| TW264575B (enExample) | 1993-10-29 | 1995-12-01 | Handotai Energy Kenkyusho Kk | |
| JP3431033B2 (ja) | 1993-10-29 | 2003-07-28 | 株式会社半導体エネルギー研究所 | 半導体作製方法 |
| TW299897U (en) | 1993-11-05 | 1997-03-01 | Semiconductor Energy Lab | A semiconductor integrated circuit |
| JP2759415B2 (ja) | 1993-11-05 | 1998-05-28 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| KR100319332B1 (ko) | 1993-12-22 | 2002-04-22 | 야마자끼 순페이 | 반도체장치및전자광학장치 |
| JP3192861B2 (ja) * | 1994-03-14 | 2001-07-30 | 株式会社東芝 | 不揮発性半導体記憶装置 |
| JP3672586B2 (ja) | 1994-03-24 | 2005-07-20 | 株式会社半導体エネルギー研究所 | 補正システムおよびその動作方法 |
| JP3464287B2 (ja) * | 1994-09-05 | 2003-11-05 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
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| JP3593212B2 (ja) | 1996-04-27 | 2004-11-24 | 株式会社半導体エネルギー研究所 | 表示装置 |
| JPH10132749A (ja) | 1996-10-01 | 1998-05-22 | Texas Instr Inc <Ti> | 集積蛍光生化学センサ |
| JP3704550B2 (ja) | 1996-10-31 | 2005-10-12 | アークレイ株式会社 | 乾式測定試験素子 |
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| JP4401448B2 (ja) | 1997-02-24 | 2010-01-20 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4566294B2 (ja) | 1997-06-06 | 2010-10-20 | 株式会社半導体エネルギー研究所 | 連続粒界結晶シリコン膜、半導体装置 |
| JP4318768B2 (ja) | 1997-07-23 | 2009-08-26 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US6667494B1 (en) * | 1997-08-19 | 2003-12-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and semiconductor display device |
| JP3980178B2 (ja) * | 1997-08-29 | 2007-09-26 | 株式会社半導体エネルギー研究所 | 不揮発性メモリおよび半導体装置 |
| JPH11143379A (ja) * | 1997-09-03 | 1999-05-28 | Semiconductor Energy Lab Co Ltd | 半導体表示装置補正システムおよび半導体表示装置の補正方法 |
| JP3943245B2 (ja) * | 1997-09-20 | 2007-07-11 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US6686623B2 (en) * | 1997-11-18 | 2004-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Nonvolatile memory and electronic apparatus |
| JPH11254442A (ja) | 1998-03-10 | 1999-09-21 | Bridgestone Corp | タイヤ滑り止め装置用モールド |
| JP4429586B2 (ja) * | 2002-11-08 | 2010-03-10 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
-
1998
- 1998-05-25 JP JP16136598A patent/JP3980178B2/ja not_active Expired - Fee Related
- 1998-08-24 US US09/138,691 patent/US6323515B1/en not_active Expired - Fee Related
- 1998-08-28 KR KR1019980035081A patent/KR100500301B1/ko not_active Expired - Fee Related
-
2001
- 2001-10-04 US US09/970,719 patent/US6597034B2/en not_active Expired - Fee Related
-
2003
- 2003-04-28 US US10/424,575 patent/US6900499B2/en not_active Expired - Fee Related
-
2005
- 2005-05-16 US US11/129,795 patent/US7495278B2/en not_active Expired - Fee Related
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