KR100500301B1 - 비휘발성메모리및반도체장치 - Google Patents

비휘발성메모리및반도체장치 Download PDF

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Publication number
KR100500301B1
KR100500301B1 KR1019980035081A KR19980035081A KR100500301B1 KR 100500301 B1 KR100500301 B1 KR 100500301B1 KR 1019980035081 A KR1019980035081 A KR 1019980035081A KR 19980035081 A KR19980035081 A KR 19980035081A KR 100500301 B1 KR100500301 B1 KR 100500301B1
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KR
South Korea
Prior art keywords
gate electrode
display device
region
floating gate
channel region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019980035081A
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English (en)
Korean (ko)
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KR19990023966A (ko
Inventor
순페이 야마자키
준 고야마
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Publication of KR19990023966A publication Critical patent/KR19990023966A/ko
Application granted granted Critical
Publication of KR100500301B1 publication Critical patent/KR100500301B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H10B10/125—Static random access memory [SRAM] devices comprising a MOSFET load element the MOSFET being a thin film transistor [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13454—Drivers integrated on the active matrix substrate
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611—Control of matrices with row and column drivers
    • G09G3/3648—Control of matrices with row and column drivers using an active matrix

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
KR1019980035081A 1997-08-29 1998-08-28 비휘발성메모리및반도체장치 Expired - Fee Related KR100500301B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP24981897 1997-08-29
JP9-249818 1997-08-29
JP10-132750 1998-04-27
JP13275098 1998-04-27
JP16136598A JP3980178B2 (ja) 1997-08-29 1998-05-25 不揮発性メモリおよび半導体装置
JP10-161365 1998-05-25

Publications (2)

Publication Number Publication Date
KR19990023966A KR19990023966A (ko) 1999-03-25
KR100500301B1 true KR100500301B1 (ko) 2006-05-25

Family

ID=27316575

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019980035081A Expired - Fee Related KR100500301B1 (ko) 1997-08-29 1998-08-28 비휘발성메모리및반도체장치

Country Status (3)

Country Link
US (4) US6323515B1 (enExample)
JP (1) JP3980178B2 (enExample)
KR (1) KR100500301B1 (enExample)

Families Citing this family (65)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6667494B1 (en) * 1997-08-19 2003-12-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and semiconductor display device
JP3980178B2 (ja) * 1997-08-29 2007-09-26 株式会社半導体エネルギー研究所 不揮発性メモリおよび半導体装置
JPH11143379A (ja) * 1997-09-03 1999-05-28 Semiconductor Energy Lab Co Ltd 半導体表示装置補正システムおよび半導体表示装置の補正方法
US6617648B1 (en) * 1998-02-25 2003-09-09 Semiconductor Energy Laboratory Co., Ltd. Projection TV
US6469317B1 (en) 1998-12-18 2002-10-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
JP2000208771A (ja) * 1999-01-11 2000-07-28 Hitachi Ltd 半導体装置、液晶表示装置およびこれらの製造方法
US6531993B1 (en) 1999-03-05 2003-03-11 Semiconductor Energy Laboratory Co., Ltd. Active matrix type display device
US6690434B1 (en) 1999-03-15 2004-02-10 Semiconductor Energy Laboratory Co., Ltd. Active matrix liquid crystal display device
KR100333275B1 (ko) * 1999-05-20 2002-04-24 구본준, 론 위라하디락사 액정표시장치의 ｔｆｔ 및 그 제조방법
JP4700156B2 (ja) * 1999-09-27 2011-06-15 株式会社半導体エネルギー研究所 半導体装置
US7023021B2 (en) * 2000-02-22 2006-04-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
TW521303B (en) 2000-02-28 2003-02-21 Semiconductor Energy Lab Electronic device
US6789910B2 (en) 2000-04-12 2004-09-14 Semiconductor Energy Laboratory, Co., Ltd. Illumination apparatus
KR100821456B1 (ko) 2000-08-14 2008-04-11 샌디스크 쓰리디 엘엘씨 밀집한 어레이 및 전하 저장 장치와, 그 제조 방법
US7180496B2 (en) 2000-08-18 2007-02-20 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method of driving the same
JP4954400B2 (ja) * 2000-08-18 2012-06-13 株式会社半導体エネルギー研究所 半導体装置
JP4954399B2 (ja) * 2000-08-18 2012-06-13 株式会社半導体エネルギー研究所 液晶表示装置
US6509616B2 (en) 2000-09-29 2003-01-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and its manufacturing method
TW525216B (en) 2000-12-11 2003-03-21 Semiconductor Energy Lab Semiconductor device, and manufacturing method thereof
SG111923A1 (en) 2000-12-21 2005-06-29 Semiconductor Energy Lab Light emitting device and method of manufacturing the same
US7061049B2 (en) * 2001-06-12 2006-06-13 Kabushiki Kaisha Toshiba Semiconductor device using SOI device and semiconductor integrated circuit using the semiconductor device
US6841813B2 (en) 2001-08-13 2005-01-11 Matrix Semiconductor, Inc. TFT mask ROM and method for making same
US7488986B2 (en) * 2001-10-26 2009-02-10 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US6956240B2 (en) * 2001-10-30 2005-10-18 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
JP3920649B2 (ja) 2002-01-31 2007-05-30 株式会社日立製作所 画像表示装置および液晶表示装置
US7148508B2 (en) * 2002-03-20 2006-12-12 Seiko Epson Corporation Wiring substrate, electronic device, electro-optical device, and electronic apparatus
US7453129B2 (en) 2002-12-18 2008-11-18 Noble Peak Vision Corp. Image sensor comprising isolated germanium photodetectors integrated with a silicon substrate and silicon circuitry
US7589380B2 (en) * 2002-12-18 2009-09-15 Noble Peak Vision Corp. Method for forming integrated circuit utilizing dual semiconductors
JP4282985B2 (ja) * 2002-12-27 2009-06-24 株式会社半導体エネルギー研究所 表示装置の作製方法
US7238963B2 (en) * 2003-04-28 2007-07-03 Tpo Displays Corp. Self-aligned LDD thin-film transistor and method of fabricating the same
US7335934B2 (en) * 2003-07-22 2008-02-26 Innovative Silicon S.A. Integrated circuit device, and method of fabricating same
EP2276088B1 (en) 2003-10-03 2018-02-14 Semiconductor Energy Laboratory Co, Ltd. Light emitting element, and light emitting device using the light emitting element
US20050074914A1 (en) * 2003-10-06 2005-04-07 Toppoly Optoelectronics Corp. Semiconductor device and method of fabrication the same
US7202523B2 (en) 2003-11-17 2007-04-10 Micron Technology, Inc. NROM flash memory devices on ultrathin silicon
WO2005064995A1 (en) * 2003-12-26 2005-07-14 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element
CN1922727B (zh) * 2004-02-20 2011-12-21 株式会社半导体能源研究所 半导体器件及ic卡、ic标签、rfid、转发器、票据、证券、护照、电子装置、包和外衣的制造方法
US20050258488A1 (en) * 2004-04-27 2005-11-24 Toppoly Optoelectronics Corp. Serially connected thin film transistors and fabrication methods thereof
KR101251622B1 (ko) * 2004-09-24 2013-04-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광장치
JP4884784B2 (ja) 2005-01-28 2012-02-29 株式会社半導体エネルギー研究所 半導体装置の作製方法及び半導体装置
KR100796592B1 (ko) * 2005-08-26 2008-01-21 삼성에스디아이 주식회사 박막트랜지스터 및 그 제조 방법
US7986287B2 (en) * 2005-08-26 2011-07-26 Semiconductor Energy Laboratory Co., Ltd. Display device and method of driving the same
EP1818989A3 (en) * 2006-02-10 2010-12-01 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor storage device and manufacturing method thereof
EP1837900A3 (en) * 2006-03-21 2008-10-15 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device
TWI416738B (zh) * 2006-03-21 2013-11-21 Semiconductor Energy Lab 非揮發性半導體記憶體裝置
EP1837917A1 (en) * 2006-03-21 2007-09-26 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device
KR101488516B1 (ko) * 2006-03-21 2015-02-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 불휘발성 반도체 기억장치
US7786526B2 (en) * 2006-03-31 2010-08-31 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device
EP1840947A3 (en) * 2006-03-31 2008-08-13 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device
US7554854B2 (en) * 2006-03-31 2009-06-30 Semiconductor Energy Laboratory Co., Ltd. Method for deleting data from NAND type nonvolatile memory
JP5132171B2 (ja) * 2006-03-31 2013-01-30 株式会社半導体エネルギー研究所 不揮発性半導体記憶装置及びその作製方法並びに半導体装置及びその作製方法
US8022460B2 (en) * 2006-03-31 2011-09-20 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device
US8629490B2 (en) 2006-03-31 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor storage device with floating gate electrode and control gate electrode
US7709307B2 (en) * 2006-08-24 2010-05-04 Kovio, Inc. Printed non-volatile memory
US7820491B2 (en) * 2007-01-05 2010-10-26 Freescale Semiconductor, Inc. Light erasable memory and method therefor
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device
JP5409024B2 (ja) * 2008-02-15 2014-02-05 株式会社半導体エネルギー研究所 表示装置
WO2010029618A1 (ja) * 2008-09-10 2010-03-18 株式会社アドバンテスト メモリデバイス、メモリデバイスの製造方法、およびデータ書込方法
JP5521495B2 (ja) * 2009-11-04 2014-06-11 セイコーエプソン株式会社 半導体装置用基板、半導体装置及び電子機器
KR20180105252A (ko) * 2010-09-03 2018-09-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 전계 효과 트랜지스터 및 반도체 장치의 제조 방법
US8647919B2 (en) * 2010-09-13 2014-02-11 Semiconductor Energy Laboratory Co., Ltd. Light-emitting display device and method for manufacturing the same
JP6053490B2 (ja) 2011-12-23 2016-12-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
US9627395B2 (en) 2015-02-11 2017-04-18 Sandisk Technologies Llc Enhanced channel mobility three-dimensional memory structure and method of making thereof
TWI548039B (zh) * 2015-03-17 2016-09-01 力晶科技股份有限公司 半導體裝置的製作方法
CN105161423B (zh) * 2015-09-13 2018-03-06 华南理工大学 一种背沟道刻蚀型氧化物薄膜晶体管的制备方法
US9478495B1 (en) 2015-10-26 2016-10-25 Sandisk Technologies Llc Three dimensional memory device containing aluminum source contact via structure and method of making thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07135318A (ja) * 1993-11-05 1995-05-23 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JPH07321339A (ja) * 1993-06-25 1995-12-08 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
JPH0878329A (ja) * 1994-09-05 1996-03-22 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法

Family Cites Families (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4065781A (en) * 1974-06-21 1977-12-27 Westinghouse Electric Corporation Insulated-gate thin film transistor with low leakage current
US4394688A (en) 1981-08-25 1983-07-19 Hamamatsu Systems, Inc. Video system having an adjustable digital gamma correction for contrast enhancement
JPH0263163A (ja) * 1988-08-29 1990-03-02 Nec Corp 不揮発性半導体記憶装置
JPH0265276A (ja) * 1988-08-31 1990-03-05 Seiko Epson Corp 記憶装置
JPH0311390A (ja) 1989-06-08 1991-01-18 Matsushita Electric Ind Co Ltd 投写型画像表示装置
US5355007A (en) * 1990-11-23 1994-10-11 Texas Instruments Incorporated Devices for non-volatile memory, systems and methods
JP3060680B2 (ja) 1990-11-30 2000-07-10 日本電気株式会社 不揮発性半導体記憶装置
US5206749A (en) * 1990-12-31 1993-04-27 Kopin Corporation Liquid crystal display having essentially single crystal transistors pixels and driving circuits
US5528397A (en) * 1991-12-03 1996-06-18 Kopin Corporation Single crystal silicon transistors for display panels
US6627953B1 (en) * 1990-12-31 2003-09-30 Kopin Corporation High density electronic circuit modules
JPH05191675A (ja) 1992-01-14 1993-07-30 Canon Inc ガンマ補正回路及びそれを用いた撮像装置
JPH05211318A (ja) * 1992-10-20 1993-08-20 Casio Comput Co Ltd 薄膜メモリ素子
JP3431647B2 (ja) 1992-10-30 2003-07-28 株式会社半導体エネルギー研究所 半導体装置とその作製方法およびメモリ装置の作製方法およびレーザードーピング処理方法
JPH06138849A (ja) 1992-10-30 1994-05-20 Sharp Corp 液晶映像表示装置
US5469365A (en) * 1993-01-25 1995-11-21 Customs Ideas Power monitor unit
DE69326749T2 (de) * 1993-02-17 2000-05-11 Stmicroelectronics S.R.L., Agrate Brianza Nichtflüchtiger Speicher mit Schutzdiode
JPH0786532A (ja) * 1993-09-17 1995-03-31 Fujitsu Ltd 半導体装置及びその製造方法
US5923962A (en) 1993-10-29 1999-07-13 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
TW264575B (enExample) 1993-10-29 1995-12-01 Handotai Energy Kenkyusho Kk
JP3431033B2 (ja) 1993-10-29 2003-07-28 株式会社半導体エネルギー研究所 半導体作製方法
TW299897U (en) 1993-11-05 1997-03-01 Semiconductor Energy Lab A semiconductor integrated circuit
KR100319332B1 (ko) 1993-12-22 2002-04-22 야마자끼 순페이 반도체장치및전자광학장치
JP3192861B2 (ja) * 1994-03-14 2001-07-30 株式会社東芝 不揮発性半導体記憶装置
JP3672586B2 (ja) 1994-03-24 2005-07-20 株式会社半導体エネルギー研究所 補正システムおよびその動作方法
GB9502717D0 (en) 1995-02-10 1995-03-29 Innovation Tk Ltd Digital image processing
US6433382B1 (en) * 1995-04-06 2002-08-13 Motorola, Inc. Split-gate vertically oriented EEPROM device and process
US5666159A (en) 1995-04-24 1997-09-09 Eastman Kodak Company Electronic camera system with programmable transmission capability
US5539459A (en) 1995-05-18 1996-07-23 Polaroid Corporation Optimal tone scale mapping in electronic cameras
US5926562A (en) 1995-06-23 1999-07-20 Fuji Photo Film Co., Ltd. Image processing method using reference values to determine exposure state
EP0751559B1 (en) * 1995-06-30 2002-11-27 STMicroelectronics S.r.l. Process for forming an integrated circuit comprising non-volatile memory cells and side transistors and corresponding IC
US5933199A (en) 1995-09-15 1999-08-03 Lg Electronics Inc. Gamma correction circuit using analog multiplier
JPH09115978A (ja) * 1995-10-17 1997-05-02 Mitsubishi Electric Corp 半導体装置の評価方法
JPH09238927A (ja) 1996-03-05 1997-09-16 Rion Co Ltd 聴覚検査用ヘッドホン装置
JPH09240506A (ja) 1996-03-05 1997-09-16 Honda Motor Co Ltd ステアリングスポーク角調整方法及びこの調整装置
JP3402909B2 (ja) 1996-03-12 2003-05-06 アルプス電気株式会社 薄膜トランジスタ装置及び液晶表示装置
JP3593212B2 (ja) 1996-04-27 2004-11-24 株式会社半導体エネルギー研究所 表示装置
JPH10132749A (ja) 1996-10-01 1998-05-22 Texas Instr Inc <Ti> 集積蛍光生化学センサ
JP3704550B2 (ja) 1996-10-31 2005-10-12 アークレイ株式会社 乾式測定試験素子
US5809520A (en) * 1996-11-06 1998-09-15 Iomega Corporation Interchangeable cartridge data storage system for devices performing diverse functions
JPH10161363A (ja) 1996-11-29 1998-06-19 Mita Ind Co Ltd 予約型原稿搬送装置
JPH10161366A (ja) 1996-12-04 1998-06-19 Konica Corp 画像濃度の補正方法
JP4401448B2 (ja) 1997-02-24 2010-01-20 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4566294B2 (ja) 1997-06-06 2010-10-20 株式会社半導体エネルギー研究所 連続粒界結晶シリコン膜、半導体装置
JP4318768B2 (ja) 1997-07-23 2009-08-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6667494B1 (en) * 1997-08-19 2003-12-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and semiconductor display device
JP3980178B2 (ja) * 1997-08-29 2007-09-26 株式会社半導体エネルギー研究所 不揮発性メモリおよび半導体装置
JPH11143379A (ja) * 1997-09-03 1999-05-28 Semiconductor Energy Lab Co Ltd 半導体表示装置補正システムおよび半導体表示装置の補正方法
JP3943245B2 (ja) * 1997-09-20 2007-07-11 株式会社半導体エネルギー研究所 半導体装置
US6686623B2 (en) * 1997-11-18 2004-02-03 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile memory and electronic apparatus
JPH11254442A (ja) 1998-03-10 1999-09-21 Bridgestone Corp タイヤ滑り止め装置用モールド
JP4429586B2 (ja) * 2002-11-08 2010-03-10 株式会社半導体エネルギー研究所 半導体装置の作製方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07321339A (ja) * 1993-06-25 1995-12-08 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
JPH07135318A (ja) * 1993-11-05 1995-05-23 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JPH0878329A (ja) * 1994-09-05 1996-03-22 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法

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US20020043682A1 (en) 2002-04-18
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US6900499B2 (en) 2005-05-31
US6323515B1 (en) 2001-11-27
JP2000022004A (ja) 2000-01-21
US6597034B2 (en) 2003-07-22
US20040031986A1 (en) 2004-02-19
US7495278B2 (en) 2009-02-24
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