JP2006523963A5 - - Google Patents

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Publication number
JP2006523963A5
JP2006523963A5 JP2006513082A JP2006513082A JP2006523963A5 JP 2006523963 A5 JP2006523963 A5 JP 2006523963A5 JP 2006513082 A JP2006513082 A JP 2006513082A JP 2006513082 A JP2006513082 A JP 2006513082A JP 2006523963 A5 JP2006523963 A5 JP 2006523963A5
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JP
Japan
Prior art keywords
tunnel junction
magnetic tunnel
element device
transistor
virtual element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006513082A
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English (en)
Japanese (ja)
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JP2006523963A (ja
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Publication date
Priority claimed from US10/417,851 external-priority patent/US6784510B1/en
Application filed filed Critical
Publication of JP2006523963A publication Critical patent/JP2006523963A/ja
Publication of JP2006523963A5 publication Critical patent/JP2006523963A5/ja
Pending legal-status Critical Current

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JP2006513082A 2003-04-16 2004-04-16 磁気抵抗ランダムアクセスメモリ装置及びその製造方法 Pending JP2006523963A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/417,851 US6784510B1 (en) 2003-04-16 2003-04-16 Magnetoresistive random access memory device structures
PCT/US2004/011864 WO2004095459A2 (en) 2003-04-16 2004-04-16 Magnetoresistive ram device and methods for fabricating

Publications (2)

Publication Number Publication Date
JP2006523963A JP2006523963A (ja) 2006-10-19
JP2006523963A5 true JP2006523963A5 (enExample) 2007-06-07

Family

ID=32908347

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006513082A Pending JP2006523963A (ja) 2003-04-16 2004-04-16 磁気抵抗ランダムアクセスメモリ装置及びその製造方法

Country Status (6)

Country Link
US (2) US6784510B1 (enExample)
JP (1) JP2006523963A (enExample)
KR (1) KR101036722B1 (enExample)
CN (1) CN100449788C (enExample)
TW (1) TWI349980B (enExample)
WO (1) WO2004095459A2 (enExample)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1113497A3 (en) * 1999-12-29 2006-01-25 Texas Instruments Incorporated Semiconductor package with conductor impedance selected during assembly
US6921953B2 (en) * 2003-04-09 2005-07-26 Micron Technology, Inc. Self-aligned, low-resistance, efficient MRAM read/write conductors
KR100500450B1 (ko) * 2003-05-13 2005-07-12 삼성전자주식회사 분할된 서브 디지트 라인들을 갖는 자기 램 셀들
TWI249842B (en) * 2003-07-22 2006-02-21 Ali Corp Integrated circuit structure and design method
KR100561859B1 (ko) * 2004-01-16 2006-03-16 삼성전자주식회사 컨택홀이 없는 나노 크기의 자기터널접합 셀 형성 방법
US7005379B2 (en) * 2004-04-08 2006-02-28 Micron Technology, Inc. Semiconductor processing methods for forming electrical contacts
JP2005340300A (ja) * 2004-05-24 2005-12-08 Sony Corp 磁気メモリ装置及びその製造方法
TWI293213B (en) * 2004-10-05 2008-02-01 Taiwan Semiconductor Mfg Magnetoresistive structures, magnetoresistive devices, and memory cells
FR2880473B1 (fr) * 2004-12-30 2007-04-06 St Microelectronics Rousset Memoire vive magnetique
US7087972B1 (en) * 2005-01-31 2006-08-08 Freescale Semiconductor, Inc. Magnetoelectronic devices utilizing protective capping layers and methods of fabricating the same
US7635884B2 (en) * 2005-07-29 2009-12-22 International Business Machines Corporation Method and structure for forming slot via bitline for MRAM devices
US8521314B2 (en) * 2006-11-01 2013-08-27 Dolby Laboratories Licensing Corporation Hierarchical control path with constraints for audio dynamics processing
KR100990143B1 (ko) * 2008-07-03 2010-10-29 주식회사 하이닉스반도체 자기터널접합 장치, 이를 구비하는 메모리 셀 및 그제조방법
US8208290B2 (en) * 2009-08-26 2012-06-26 Qualcomm Incorporated System and method to manufacture magnetic random access memory
US8390283B2 (en) 2009-09-25 2013-03-05 Everspin Technologies, Inc. Three axis magnetic field sensor
US8518734B2 (en) 2010-03-31 2013-08-27 Everspin Technologies, Inc. Process integration of a single chip three axis magnetic field sensor
CN102376737B (zh) * 2010-08-24 2014-03-19 中芯国际集成电路制造(北京)有限公司 嵌入mram的集成电路及该集成电路的制备方法
JP2013058521A (ja) 2011-09-07 2013-03-28 Toshiba Corp 記憶装置及びその製造方法
US8895323B2 (en) * 2011-12-19 2014-11-25 Lam Research Corporation Method of forming a magnetoresistive random-access memory device
US8456883B1 (en) * 2012-05-29 2013-06-04 Headway Technologies, Inc. Method of spin torque MRAM process integration
JP6148450B2 (ja) * 2012-10-29 2017-06-14 株式会社東芝 積層構造、スピントランジスタおよびリコンフィギャラブル論理回路
US10522591B2 (en) * 2013-03-13 2019-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. Integration of magneto-resistive random access memory and capacitor
CN104122514B (zh) * 2013-04-24 2018-01-02 上海矽睿科技有限公司 磁传感装置的制备工艺
KR102399342B1 (ko) * 2015-08-21 2022-05-19 삼성전자주식회사 메모리 장치 및 그 제조 방법
DE112016006556T5 (de) * 2016-03-07 2018-11-22 Intel Corporation Ansätze zum Einbetten von Spin-Hall-MTJ-Vorrichtungen in einen Logikprozessor und die daraus resultierenden Strukturen
WO2017160311A1 (en) * 2016-03-18 2017-09-21 Intel Corporation Damascene-based approaches for embedding spin hall mtj devices into a logic processor and the resulting structures
CN109713119A (zh) * 2017-10-25 2019-05-03 上海磁宇信息科技有限公司 一种磁性随机存储器单元阵列及周边电路连线的制造方法
CN109713120A (zh) * 2017-10-25 2019-05-03 上海磁宇信息科技有限公司 一种磁性随机存储器单元阵列及周边电路连线的制造方法
CN109873009B (zh) * 2017-12-01 2023-09-22 上海磁宇信息科技有限公司 一种使用接地哑元的mram芯片
CN109994600B (zh) * 2017-12-29 2022-11-04 上海磁宇信息科技有限公司 一种磁性随机存储器的制作方法
KR20190122421A (ko) * 2018-04-20 2019-10-30 삼성전자주식회사 반도체 소자
CN111668368B (zh) * 2019-03-08 2023-12-29 上海磁宇信息科技有限公司 一种假磁性隧道结单元结构制备方法
CN111816761B (zh) * 2019-04-11 2024-04-12 上海磁宇信息科技有限公司 一种赝磁性隧道结单元
CN111816763B (zh) * 2019-04-11 2024-04-23 上海磁宇信息科技有限公司 一种磁性隧道结存储阵列单元及其外围电路的制备方法
CN111863865B (zh) * 2019-04-24 2024-04-12 上海磁宇信息科技有限公司 一种赝磁性隧道结单元
CN111987216B (zh) * 2019-05-23 2024-04-16 上海磁宇信息科技有限公司 一种替代通孔的赝磁性隧道结单元制备方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5734605A (en) 1996-09-10 1998-03-31 Motorola, Inc. Multi-layer magnetic tunneling junction memory cells
US6055178A (en) * 1998-12-18 2000-04-25 Motorola, Inc. Magnetic random access memory with a reference memory array
US6365419B1 (en) * 2000-08-28 2002-04-02 Motorola, Inc. High density MRAM cell array
US6487110B2 (en) * 2000-09-27 2002-11-26 Canon Kabushiki Kaisha Nonvolatile solid-state memory device using magnetoresistive effect and recording and reproducing method of the same
JP4712204B2 (ja) * 2001-03-05 2011-06-29 ルネサスエレクトロニクス株式会社 記憶装置
KR100399436B1 (ko) * 2001-03-28 2003-09-29 주식회사 하이닉스반도체 마그네틱 램 및 그 형성방법
JP3892736B2 (ja) * 2001-03-29 2007-03-14 株式会社東芝 半導体記憶装置
KR100403313B1 (ko) * 2001-05-22 2003-10-30 주식회사 하이닉스반도체 바이폴라 접합 트랜지스터를 이용한 마그네틱 램 및 그형성방법
JP2002359355A (ja) * 2001-05-28 2002-12-13 Internatl Business Mach Corp <Ibm> 多層構造の不揮発性磁気メモリ・セル及びそれを用いた記憶回路ブロック
JP3844117B2 (ja) * 2001-06-27 2006-11-08 インターナショナル・ビジネス・マシーンズ・コーポレーション メモリセル、記憶回路ブロック、データの書き込み方法及びデータの読み出し方法
JP4434527B2 (ja) * 2001-08-08 2010-03-17 株式会社東芝 半導体記憶装置
JP4046513B2 (ja) * 2002-01-30 2008-02-13 株式会社ルネサステクノロジ 半導体集積回路

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