FR2880473B1 - Memoire vive magnetique - Google Patents

Memoire vive magnetique

Info

Publication number
FR2880473B1
FR2880473B1 FR0453260A FR0453260A FR2880473B1 FR 2880473 B1 FR2880473 B1 FR 2880473B1 FR 0453260 A FR0453260 A FR 0453260A FR 0453260 A FR0453260 A FR 0453260A FR 2880473 B1 FR2880473 B1 FR 2880473B1
Authority
FR
France
Prior art keywords
memory life
life magnetic
magnetic
memory
life
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0453260A
Other languages
English (en)
Other versions
FR2880473A1 (fr
Inventor
Philippe Boivin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Rousset SAS
Original Assignee
STMicroelectronics Rousset SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Rousset SAS filed Critical STMicroelectronics Rousset SAS
Priority to FR0453260A priority Critical patent/FR2880473B1/fr
Priority to US11/323,060 priority patent/US7315071B2/en
Publication of FR2880473A1 publication Critical patent/FR2880473A1/fr
Application granted granted Critical
Publication of FR2880473B1 publication Critical patent/FR2880473B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Semiconductor Memories (AREA)
FR0453260A 2004-12-30 2004-12-30 Memoire vive magnetique Expired - Fee Related FR2880473B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR0453260A FR2880473B1 (fr) 2004-12-30 2004-12-30 Memoire vive magnetique
US11/323,060 US7315071B2 (en) 2004-12-30 2005-12-30 Magnetic RAM

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0453260A FR2880473B1 (fr) 2004-12-30 2004-12-30 Memoire vive magnetique

Publications (2)

Publication Number Publication Date
FR2880473A1 FR2880473A1 (fr) 2006-07-07
FR2880473B1 true FR2880473B1 (fr) 2007-04-06

Family

ID=34953634

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0453260A Expired - Fee Related FR2880473B1 (fr) 2004-12-30 2004-12-30 Memoire vive magnetique

Country Status (2)

Country Link
US (1) US7315071B2 (fr)
FR (1) FR2880473B1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2880474A1 (fr) * 2004-12-30 2006-07-07 St Microelectronics Rousset Memoire vive magnetique
US9368716B2 (en) * 2009-02-02 2016-06-14 Qualcomm Incorporated Magnetic tunnel junction (MTJ) storage element and spin transfer torque magnetoresistive random access memory (STT-MRAM) cells having an MTJ
US9134385B2 (en) * 2013-05-09 2015-09-15 Honeywell International Inc. Magnetic-field sensing device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6673675B2 (en) 2002-04-11 2004-01-06 Micron Technology, Inc. Methods of fabricating an MRAM device using chemical mechanical polishing
US6828639B2 (en) * 2002-07-17 2004-12-07 Micron Technology, Inc. Process flow for building MRAM structures
US7064974B2 (en) 2002-09-12 2006-06-20 Nec Corporation Magnetic random access memory and method for manufacturing the same
US6784510B1 (en) * 2003-04-16 2004-08-31 Freescale Semiconductor, Inc. Magnetoresistive random access memory device structures

Also Published As

Publication number Publication date
FR2880473A1 (fr) 2006-07-07
US20060145198A1 (en) 2006-07-06
US7315071B2 (en) 2008-01-01

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20070831