TWI349980B - Magnetoresistive random access memory device structures and methods for fabricating the same - Google Patents

Magnetoresistive random access memory device structures and methods for fabricating the same

Info

Publication number
TWI349980B
TWI349980B TW093110733A TW93110733A TWI349980B TW I349980 B TWI349980 B TW I349980B TW 093110733 A TW093110733 A TW 093110733A TW 93110733 A TW93110733 A TW 93110733A TW I349980 B TWI349980 B TW I349980B
Authority
TW
Taiwan
Prior art keywords
fabricating
methods
memory device
random access
same
Prior art date
Application number
TW093110733A
Other languages
English (en)
Chinese (zh)
Other versions
TW200509312A (en
Inventor
Gregory Grynkewich
Mark Deherrera
Mark A Durlam
Clarence Tracy
Original Assignee
Everspin Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Everspin Technologies Inc filed Critical Everspin Technologies Inc
Publication of TW200509312A publication Critical patent/TW200509312A/zh
Application granted granted Critical
Publication of TWI349980B publication Critical patent/TWI349980B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
TW093110733A 2003-04-16 2004-04-16 Magnetoresistive random access memory device structures and methods for fabricating the same TWI349980B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/417,851 US6784510B1 (en) 2003-04-16 2003-04-16 Magnetoresistive random access memory device structures

Publications (2)

Publication Number Publication Date
TW200509312A TW200509312A (en) 2005-03-01
TWI349980B true TWI349980B (en) 2011-10-01

Family

ID=32908347

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093110733A TWI349980B (en) 2003-04-16 2004-04-16 Magnetoresistive random access memory device structures and methods for fabricating the same

Country Status (6)

Country Link
US (2) US6784510B1 (enExample)
JP (1) JP2006523963A (enExample)
KR (1) KR101036722B1 (enExample)
CN (1) CN100449788C (enExample)
TW (1) TWI349980B (enExample)
WO (1) WO2004095459A2 (enExample)

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KR100561859B1 (ko) * 2004-01-16 2006-03-16 삼성전자주식회사 컨택홀이 없는 나노 크기의 자기터널접합 셀 형성 방법
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US7705340B2 (en) * 2004-10-05 2010-04-27 Taiwan Semiconductor Manufacturing Company, Ltd. Inflected magnetoresistive structures and memory cells having inflected magnetoresistive structures
FR2880473B1 (fr) * 2004-12-30 2007-04-06 St Microelectronics Rousset Memoire vive magnetique
US7087972B1 (en) * 2005-01-31 2006-08-08 Freescale Semiconductor, Inc. Magnetoelectronic devices utilizing protective capping layers and methods of fabricating the same
US7635884B2 (en) * 2005-07-29 2009-12-22 International Business Machines Corporation Method and structure for forming slot via bitline for MRAM devices
US8521314B2 (en) * 2006-11-01 2013-08-27 Dolby Laboratories Licensing Corporation Hierarchical control path with constraints for audio dynamics processing
KR100990143B1 (ko) * 2008-07-03 2010-10-29 주식회사 하이닉스반도체 자기터널접합 장치, 이를 구비하는 메모리 셀 및 그제조방법
US8208290B2 (en) * 2009-08-26 2012-06-26 Qualcomm Incorporated System and method to manufacture magnetic random access memory
US8390283B2 (en) 2009-09-25 2013-03-05 Everspin Technologies, Inc. Three axis magnetic field sensor
US8518734B2 (en) 2010-03-31 2013-08-27 Everspin Technologies, Inc. Process integration of a single chip three axis magnetic field sensor
CN102376737B (zh) * 2010-08-24 2014-03-19 中芯国际集成电路制造(北京)有限公司 嵌入mram的集成电路及该集成电路的制备方法
JP2013058521A (ja) 2011-09-07 2013-03-28 Toshiba Corp 記憶装置及びその製造方法
US8895323B2 (en) * 2011-12-19 2014-11-25 Lam Research Corporation Method of forming a magnetoresistive random-access memory device
US8456883B1 (en) * 2012-05-29 2013-06-04 Headway Technologies, Inc. Method of spin torque MRAM process integration
JP6148450B2 (ja) * 2012-10-29 2017-06-14 株式会社東芝 積層構造、スピントランジスタおよびリコンフィギャラブル論理回路
US10522591B2 (en) * 2013-03-13 2019-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. Integration of magneto-resistive random access memory and capacitor
CN104122514B (zh) * 2013-04-24 2018-01-02 上海矽睿科技有限公司 磁传感装置的制备工艺
KR102399342B1 (ko) * 2015-08-21 2022-05-19 삼성전자주식회사 메모리 장치 및 그 제조 방법
WO2017155507A1 (en) * 2016-03-07 2017-09-14 Intel Corporation Approaches for embedding spin hall mtj devices into a logic processor and the resulting structures
US11469268B2 (en) * 2016-03-18 2022-10-11 Intel Corporation Damascene-based approaches for embedding spin hall MTJ devices into a logic processor and the resulting structures
CN109713120A (zh) * 2017-10-25 2019-05-03 上海磁宇信息科技有限公司 一种磁性随机存储器单元阵列及周边电路连线的制造方法
CN109713119A (zh) * 2017-10-25 2019-05-03 上海磁宇信息科技有限公司 一种磁性随机存储器单元阵列及周边电路连线的制造方法
CN109873009B (zh) * 2017-12-01 2023-09-22 上海磁宇信息科技有限公司 一种使用接地哑元的mram芯片
CN109994600B (zh) * 2017-12-29 2022-11-04 上海磁宇信息科技有限公司 一种磁性随机存储器的制作方法
KR20190122421A (ko) * 2018-04-20 2019-10-30 삼성전자주식회사 반도체 소자
CN111668368B (zh) * 2019-03-08 2023-12-29 上海磁宇信息科技有限公司 一种假磁性隧道结单元结构制备方法
CN111816763B (zh) * 2019-04-11 2024-04-23 上海磁宇信息科技有限公司 一种磁性隧道结存储阵列单元及其外围电路的制备方法
CN111816761B (zh) * 2019-04-11 2024-04-12 上海磁宇信息科技有限公司 一种赝磁性隧道结单元
CN111863865B (zh) * 2019-04-24 2024-04-12 上海磁宇信息科技有限公司 一种赝磁性隧道结单元
CN111987216B (zh) * 2019-05-23 2024-04-16 上海磁宇信息科技有限公司 一种替代通孔的赝磁性隧道结单元制备方法

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JP4046513B2 (ja) * 2002-01-30 2008-02-13 株式会社ルネサステクノロジ 半導体集積回路

Also Published As

Publication number Publication date
WO2004095459A2 (en) 2004-11-04
KR20060009844A (ko) 2006-02-01
US20040257902A1 (en) 2004-12-23
US6784510B1 (en) 2004-08-31
US6890770B2 (en) 2005-05-10
CN1774816A (zh) 2006-05-17
WO2004095459A3 (en) 2005-03-24
JP2006523963A (ja) 2006-10-19
CN100449788C (zh) 2009-01-07
TW200509312A (en) 2005-03-01
KR101036722B1 (ko) 2011-05-24

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