DE602004012813D1 - Magnetoresistives Element, magnetische Speicherzelle und magnetische Speicheranordnung - Google Patents

Magnetoresistives Element, magnetische Speicherzelle und magnetische Speicheranordnung

Info

Publication number
DE602004012813D1
DE602004012813D1 DE602004012813T DE602004012813T DE602004012813D1 DE 602004012813 D1 DE602004012813 D1 DE 602004012813D1 DE 602004012813 T DE602004012813 T DE 602004012813T DE 602004012813 T DE602004012813 T DE 602004012813T DE 602004012813 D1 DE602004012813 D1 DE 602004012813D1
Authority
DE
Germany
Prior art keywords
magnetic memory
magnetoresistive element
memory cell
memory device
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE602004012813T
Other languages
English (en)
Other versions
DE602004012813T2 (de
Inventor
Hitoshi Hatate
Akifumi Kamijima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Corp
Original Assignee
TDK Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TDK Corp filed Critical TDK Corp
Publication of DE602004012813D1 publication Critical patent/DE602004012813D1/de
Application granted granted Critical
Publication of DE602004012813T2 publication Critical patent/DE602004012813T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
DE602004012813T 2003-10-10 2004-10-08 Magnetoresistives Element, magnetische Speicherzelle und magnetische Speicheranordnung Expired - Lifetime DE602004012813T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003352844A JP4868431B2 (ja) 2003-10-10 2003-10-10 磁気記憶セルおよび磁気メモリデバイス
JP2003352844 2003-10-10

Publications (2)

Publication Number Publication Date
DE602004012813D1 true DE602004012813D1 (de) 2008-05-15
DE602004012813T2 DE602004012813T2 (de) 2009-05-07

Family

ID=34309302

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004012813T Expired - Lifetime DE602004012813T2 (de) 2003-10-10 2004-10-08 Magnetoresistives Element, magnetische Speicherzelle und magnetische Speicheranordnung

Country Status (5)

Country Link
US (1) US7064367B2 (de)
EP (1) EP1523011B1 (de)
JP (1) JP4868431B2 (de)
CN (1) CN100466095C (de)
DE (1) DE602004012813T2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2002232848A1 (en) * 2000-10-20 2002-04-29 Dan Carothers Non-volatile magnetic memory device
JP2005109266A (ja) * 2003-09-30 2005-04-21 Tdk Corp 磁気メモリデバイスおよび磁気メモリデバイスの製造方法
JP2006173472A (ja) * 2004-12-17 2006-06-29 Toshiba Corp 磁気記憶装置およびその製造方法
US20090010046A1 (en) * 2007-06-28 2009-01-08 Krishnakumar Mani magnetic memory device with non-rectangular cross section current carrying conductors
CN105336357B (zh) * 2014-07-17 2018-05-11 华为技术有限公司 磁性存储装置及运用该装置的信息存储方法
US10128253B2 (en) 2016-01-29 2018-11-13 Taiwan Semiconductor Manufacturing Company, Ltd. Two-port SRAM structure
JP6699635B2 (ja) * 2017-08-18 2020-05-27 Tdk株式会社 磁気センサ
US10515973B2 (en) * 2017-11-30 2019-12-24 Intel Corporation Wordline bridge in a 3D memory array

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0671105B2 (ja) * 1984-04-02 1994-09-07 旭化成工業株式会社 磁電変換素子の製造方法
JPH0572233A (ja) * 1991-09-12 1993-03-23 Asahi Chem Ind Co Ltd 電流センサ
US5343422A (en) 1993-02-23 1994-08-30 International Business Machines Corporation Nonvolatile magnetoresistive storage device using spin valve effect
US5587943A (en) 1995-02-13 1996-12-24 Integrated Microtransducer Electronics Corporation Nonvolatile magnetoresistive memory with fully closed flux operation
US5629922A (en) 1995-02-22 1997-05-13 Massachusetts Institute Of Technology Electron tunneling device using ferromagnetic thin films
JP3333670B2 (ja) 1995-09-22 2002-10-15 ティーディーケイ株式会社 磁性薄膜メモリ
US5801984A (en) * 1996-11-27 1998-09-01 International Business Machines Corporation Magnetic tunnel junction device with ferromagnetic multilayer having fixed magnetic moment
DE19836567C2 (de) * 1998-08-12 2000-12-07 Siemens Ag Speicherzellenanordnung mit Speicherelementen mit magnetoresistivem Effekt und Verfahren zu deren Herstellung
JP2000090658A (ja) * 1998-09-09 2000-03-31 Sanyo Electric Co Ltd 磁気メモリ素子
JP2001273759A (ja) 2000-03-27 2001-10-05 Sharp Corp 磁気メモリセルと磁気メモリ装置
US6413788B1 (en) 2001-02-28 2002-07-02 Micron Technology, Inc. Keepers for MRAM electrodes
JP2002289807A (ja) * 2001-03-27 2002-10-04 Toshiba Corp 磁気メモリ装置および磁気抵抗効果素子
US6404674B1 (en) 2001-04-02 2002-06-11 Hewlett Packard Company Intellectual Property Administrator Cladded read-write conductor for a pinned-on-the-fly soft reference layer
JP2003197875A (ja) 2001-12-28 2003-07-11 Toshiba Corp 磁気記憶装置
JP3959335B2 (ja) * 2002-07-30 2007-08-15 株式会社東芝 磁気記憶装置及びその製造方法
JP3866641B2 (ja) * 2002-09-24 2007-01-10 株式会社東芝 磁気記憶装置およびその製造方法
JP3906145B2 (ja) * 2002-11-22 2007-04-18 株式会社東芝 磁気ランダムアクセスメモリ
JP3964818B2 (ja) * 2003-04-01 2007-08-22 株式会社東芝 磁気ランダムアクセスメモリ

Also Published As

Publication number Publication date
US20050099865A1 (en) 2005-05-12
EP1523011A3 (de) 2005-12-21
JP4868431B2 (ja) 2012-02-01
CN100466095C (zh) 2009-03-04
EP1523011B1 (de) 2008-04-02
CN1606094A (zh) 2005-04-13
DE602004012813T2 (de) 2009-05-07
JP2005116982A (ja) 2005-04-28
EP1523011A2 (de) 2005-04-13
US7064367B2 (en) 2006-06-20

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