DE602006001687D1 - Magnetoresistive Vorrichtung und Magnetspeicher damit - Google Patents
Magnetoresistive Vorrichtung und Magnetspeicher damitInfo
- Publication number
- DE602006001687D1 DE602006001687D1 DE602006001687T DE602006001687T DE602006001687D1 DE 602006001687 D1 DE602006001687 D1 DE 602006001687D1 DE 602006001687 T DE602006001687 T DE 602006001687T DE 602006001687 T DE602006001687 T DE 602006001687T DE 602006001687 D1 DE602006001687 D1 DE 602006001687D1
- Authority
- DE
- Germany
- Prior art keywords
- magnetic memory
- magnetoresistive device
- magnetoresistive
- magnetic
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
- H01F10/3272—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Magnetic active materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005147317 | 2005-05-19 | ||
JP2005362793A JP4877575B2 (ja) | 2005-05-19 | 2005-12-16 | 磁気ランダムアクセスメモリ |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602006001687D1 true DE602006001687D1 (de) | 2008-08-21 |
Family
ID=36829729
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602006001687T Active DE602006001687D1 (de) | 2005-05-19 | 2006-05-19 | Magnetoresistive Vorrichtung und Magnetspeicher damit |
Country Status (5)
Country | Link |
---|---|
US (2) | US7538402B2 (de) |
EP (1) | EP1727149B1 (de) |
JP (1) | JP4877575B2 (de) |
KR (1) | KR100867967B1 (de) |
DE (1) | DE602006001687D1 (de) |
Families Citing this family (83)
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JP5077802B2 (ja) * | 2005-02-16 | 2012-11-21 | 日本電気株式会社 | 積層強磁性構造体、及び、mtj素子 |
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KR100867662B1 (ko) | 2004-03-12 | 2008-11-10 | 도쿠리쓰교세이호징 가가쿠 기주쓰 신코 기코 | 자기저항소자, 터널 장벽층 및 자기저항소자의 제조방법 |
JP2005294376A (ja) | 2004-03-31 | 2005-10-20 | Toshiba Corp | 磁気記録素子及び磁気メモリ |
FR2869445B1 (fr) * | 2004-04-26 | 2006-07-07 | St Microelectronics Sa | Element de memoire vive magnetique |
JP2006005278A (ja) | 2004-06-21 | 2006-01-05 | Alps Electric Co Ltd | 磁気検出素子 |
JP4460965B2 (ja) * | 2004-07-22 | 2010-05-12 | 株式会社東芝 | 磁気ランダムアクセスメモリ |
JP4868198B2 (ja) * | 2004-08-19 | 2012-02-01 | 日本電気株式会社 | 磁性メモリ |
JP2006128410A (ja) | 2004-10-28 | 2006-05-18 | Alps Electric Co Ltd | 磁気検出素子及びその製造方法 |
JP5077802B2 (ja) | 2005-02-16 | 2012-11-21 | 日本電気株式会社 | 積層強磁性構造体、及び、mtj素子 |
JP2006319259A (ja) | 2005-05-16 | 2006-11-24 | Fujitsu Ltd | 強磁性トンネル接合素子、これを用いた磁気ヘッド、磁気記録装置、および磁気メモリ装置 |
JP4877575B2 (ja) * | 2005-05-19 | 2012-02-15 | 日本電気株式会社 | 磁気ランダムアクセスメモリ |
JP5096702B2 (ja) | 2005-07-28 | 2012-12-12 | 株式会社日立製作所 | 磁気抵抗効果素子及びそれを搭載した不揮発性磁気メモリ |
US7280389B2 (en) * | 2006-02-08 | 2007-10-09 | Magic Technologies, Inc. | Synthetic anti-ferromagnetic structure with non-magnetic spacer for MRAM applications |
US20080055792A1 (en) * | 2006-03-07 | 2008-03-06 | Agency For Science, Technology And Research | Memory cells and devices having magnetoresistive tunnel junction with guided magnetic moment switching and method |
US7684161B2 (en) | 2006-04-18 | 2010-03-23 | Everspin Technologies, Inc. | Methods and apparatus for a synthetic anti-ferromagnet structure with reduced temperature dependence |
JP4711079B2 (ja) * | 2006-06-23 | 2011-06-29 | トヨタ自動車株式会社 | 射出発泡成形装置および射出発泡成形方法 |
-
2005
- 2005-12-16 JP JP2005362793A patent/JP4877575B2/ja active Active
-
2006
- 2006-05-18 US US11/436,095 patent/US7538402B2/en active Active
- 2006-05-19 DE DE602006001687T patent/DE602006001687D1/de active Active
- 2006-05-19 KR KR1020060045347A patent/KR100867967B1/ko not_active IP Right Cessation
- 2006-05-19 EP EP06090090A patent/EP1727149B1/de not_active Expired - Fee Related
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2009
- 2009-05-01 US US12/453,209 patent/US8513748B2/en active Active
Also Published As
Publication number | Publication date |
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KR20060120499A (ko) | 2006-11-27 |
US20090219754A1 (en) | 2009-09-03 |
JP4877575B2 (ja) | 2012-02-15 |
JP2006352062A (ja) | 2006-12-28 |
US20060262594A1 (en) | 2006-11-23 |
KR100867967B1 (ko) | 2008-11-11 |
US8513748B2 (en) | 2013-08-20 |
US7538402B2 (en) | 2009-05-26 |
EP1727149A1 (de) | 2006-11-29 |
EP1727149B1 (de) | 2008-07-09 |
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