WO2009057428A1 - 磁気抵抗効果記憶装置 - Google Patents

磁気抵抗効果記憶装置 Download PDF

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Publication number
WO2009057428A1
WO2009057428A1 PCT/JP2008/068267 JP2008068267W WO2009057428A1 WO 2009057428 A1 WO2009057428 A1 WO 2009057428A1 JP 2008068267 W JP2008068267 W JP 2008068267W WO 2009057428 A1 WO2009057428 A1 WO 2009057428A1
Authority
WO
WIPO (PCT)
Prior art keywords
magnetic
free layer
layer
group facing
magnetoresistive effect
Prior art date
Application number
PCT/JP2008/068267
Other languages
English (en)
French (fr)
Inventor
Yuukou Katou
Original Assignee
Nec Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corporation filed Critical Nec Corporation
Publication of WO2009057428A1 publication Critical patent/WO2009057428A1/ja

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type

Abstract

　磁気抵抗効果記憶素子は、磁性体フリー層が少なくとも１組の反強磁性結合した磁性体層対を有する。磁性体フリー層が一方向に向く磁性体層群と逆方向に向く磁性体層群とこれらに挟まれた非磁性層とを備える。磁性体フリー層のすべての磁性層の磁化量の総和がほぼゼロである。且つ、磁性体フリー層の一方向に向く磁性体層群の異方性磁界と逆方向に向く磁性体層群の異方性磁界が異なる。本構成であれば、フリー層磁性体の磁化量の総和がゼロであるため、フリー層端部からの漏れ磁場が抑制できる。さらに磁性体フリー層の一方向に向く磁性体層群の異方性磁界と逆方向に向く磁性体層群の異方性磁界が異なるため、容易軸方向成分をもつ磁場を印加することでフリー層の磁化方向を設定できる。集積化しても消費電力の増加を抑制できる磁気抵抗効果記憶装置が実現できる。
PCT/JP2008/068267 2007-10-29 2008-10-08 磁気抵抗効果記憶装置 WO2009057428A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007280513 2007-10-29
JP2007-280513 2007-10-29

Publications (1)

Publication Number Publication Date
WO2009057428A1 true WO2009057428A1 (ja) 2009-05-07

Family

ID=40590823

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/068267 WO2009057428A1 (ja) 2007-10-29 2008-10-08 磁気抵抗効果記憶装置

Country Status (1)

Country Link
WO (1) WO2009057428A1 (ja)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005098953A1 (ja) * 2004-03-31 2005-10-20 Nec Corporation 磁化方向制御方法、及びそれを応用したｍｒａｍ
JP2006352062A (ja) * 2005-05-19 2006-12-28 Nec Corp 磁気抵抗デバイス、及び、それを用いた磁気メモリ

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005098953A1 (ja) * 2004-03-31 2005-10-20 Nec Corporation 磁化方向制御方法、及びそれを応用したｍｒａｍ
JP2006352062A (ja) * 2005-05-19 2006-12-28 Nec Corp 磁気抵抗デバイス、及び、それを用いた磁気メモリ

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