WO2008120482A1 - 磁気ランダムアクセスメモリ - Google Patents
磁気ランダムアクセスメモリ Download PDFInfo
- Publication number
- WO2008120482A1 WO2008120482A1 PCT/JP2008/050574 JP2008050574W WO2008120482A1 WO 2008120482 A1 WO2008120482 A1 WO 2008120482A1 JP 2008050574 W JP2008050574 W JP 2008050574W WO 2008120482 A1 WO2008120482 A1 WO 2008120482A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- material layer
- magnetic material
- region
- random access
- access memory
- Prior art date
Links
- 239000000696 magnetic material Substances 0.000 abstract 8
- 230000005415 magnetization Effects 0.000 abstract 3
- 239000000463 material Substances 0.000 abstract 1
- 230000002441 reversible effect Effects 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1653—Address circuits or decoders
- G11C11/1655—Bit-line or column circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1659—Cell access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1673—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
- G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
- G11C19/0808—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation
- G11C19/0841—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation using electric current
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/593,417 US8315087B2 (en) | 2007-03-29 | 2008-01-18 | Magnetic random access memory |
JP2009507421A JP5201539B2 (ja) | 2007-03-29 | 2008-01-18 | 磁気ランダムアクセスメモリ |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007-086567 | 2007-03-29 | ||
JP2007086567 | 2007-03-29 | ||
JP2007-267765 | 2007-10-15 | ||
JP2007267765 | 2007-10-15 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2008120482A1 true WO2008120482A1 (ja) | 2008-10-09 |
Family
ID=39808069
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/050574 WO2008120482A1 (ja) | 2007-03-29 | 2008-01-18 | 磁気ランダムアクセスメモリ |
Country Status (3)
Country | Link |
---|---|
US (1) | US8315087B2 (ja) |
JP (1) | JP5201539B2 (ja) |
WO (1) | WO2008120482A1 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2942347A1 (fr) * | 2009-02-17 | 2010-08-20 | Thales Sa | Dispositif a electronique de spin a commande de deplacement de parois par courants de spin verticaux |
JP2012204802A (ja) * | 2011-03-28 | 2012-10-22 | Toshiba Corp | 磁気記憶素子、磁気記憶装置、および磁気メモリ |
JP2012209005A (ja) * | 2011-03-30 | 2012-10-25 | Hitachi Ltd | 磁気ヘッド及び磁気記憶装置 |
JP5505312B2 (ja) * | 2008-12-25 | 2014-05-28 | 日本電気株式会社 | 磁気メモリ素子及び磁気ランダムアクセスメモリ |
JP2019041098A (ja) * | 2017-08-22 | 2019-03-14 | Tdk株式会社 | スピン流磁気抵抗効果素子及び磁気メモリ |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7715244B2 (en) * | 2008-02-05 | 2010-05-11 | Unity Semiconductor Corporation | Non-volatile register having a memory element and register logic vertically configured on a substrate |
WO2009104427A1 (ja) * | 2008-02-19 | 2009-08-27 | 日本電気株式会社 | 磁気ランダムアクセスメモリ |
WO2011143356A1 (en) * | 2010-05-11 | 2011-11-17 | University Of Virginia Patent Foundation | Magnetic random access memory device |
US9373775B2 (en) * | 2012-09-13 | 2016-06-21 | Micron Technology, Inc. | Methods of forming magnetic memory cells |
JP6219200B2 (ja) | 2014-02-27 | 2017-10-25 | 株式会社東芝 | 磁気装置 |
US9472215B1 (en) * | 2015-06-19 | 2016-10-18 | HGST Netherlands B.V. | T-shape scissor sensor and method of making the same |
CN108666339B (zh) * | 2017-03-28 | 2020-11-13 | 中芯国际集成电路制造(上海)有限公司 | 磁性随机存储器及其存储单元的制造方法 |
US10056126B1 (en) | 2017-10-27 | 2018-08-21 | Honeywell International Inc. | Magnetic tunnel junction based memory device |
JP2020155178A (ja) * | 2019-03-20 | 2020-09-24 | キオクシア株式会社 | 磁気記憶装置 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005150303A (ja) * | 2003-11-13 | 2005-06-09 | Toshiba Corp | 磁気抵抗効果素子および磁気メモリ |
JP2006073930A (ja) * | 2004-09-06 | 2006-03-16 | Canon Inc | 磁壁移動を利用した磁気抵抗効果素子の磁化状態の変化方法及び該方法を用いた磁気メモリ素子、固体磁気メモリ |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02208680A (ja) | 1989-02-08 | 1990-08-20 | Konica Corp | 熱ローラ定着装置 |
US6767655B2 (en) | 2000-08-21 | 2004-07-27 | Matsushita Electric Industrial Co., Ltd. | Magneto-resistive element |
US6775183B2 (en) * | 2002-10-22 | 2004-08-10 | Btg International Ltd. | Magnetic memory device employing giant magnetoresistance effect |
US6834005B1 (en) * | 2003-06-10 | 2004-12-21 | International Business Machines Corporation | Shiftable magnetic shift register and method of using the same |
JP2005093488A (ja) | 2003-09-12 | 2005-04-07 | Sony Corp | 磁気抵抗効果素子とその製造方法、および磁気メモリ装置とその製造方法 |
JP4413603B2 (ja) | 2003-12-24 | 2010-02-10 | 株式会社東芝 | 磁気記憶装置及び磁気情報の書込み方法 |
JP4920881B2 (ja) | 2004-09-27 | 2012-04-18 | 株式会社日立製作所 | 低消費電力磁気メモリ及び磁化情報書き込み装置 |
JP2006278645A (ja) * | 2005-03-29 | 2006-10-12 | Fujitsu Ltd | 磁気メモリ装置 |
US7929342B2 (en) | 2005-08-15 | 2011-04-19 | Nec Corporation | Magnetic memory cell, magnetic random access memory, and data read/write method for magnetic random access memory |
KR100923302B1 (ko) * | 2006-02-27 | 2009-10-27 | 삼성전자주식회사 | 자기 메모리 소자 |
JP5077732B2 (ja) | 2006-03-23 | 2012-11-21 | 日本電気株式会社 | 磁気メモリセル、磁気ランダムアクセスメモリ、半導体装置及び半導体装置の製造方法 |
JP2007317895A (ja) | 2006-05-26 | 2007-12-06 | Fujitsu Ltd | 磁気抵抗メモリ装置 |
JP4969981B2 (ja) * | 2006-10-03 | 2012-07-04 | 株式会社東芝 | 磁気記憶装置 |
JP5201536B2 (ja) | 2006-12-12 | 2013-06-05 | 日本電気株式会社 | 磁気抵抗効果素子及びmram |
JP5224127B2 (ja) | 2007-02-13 | 2013-07-03 | 日本電気株式会社 | 磁気抵抗効果素子、および磁気ランダムアクセスメモリ |
JP2008211057A (ja) * | 2007-02-27 | 2008-09-11 | Toshiba Corp | 磁気ランダムアクセスメモリ |
-
2008
- 2008-01-18 WO PCT/JP2008/050574 patent/WO2008120482A1/ja active Application Filing
- 2008-01-18 JP JP2009507421A patent/JP5201539B2/ja active Active
- 2008-01-18 US US12/593,417 patent/US8315087B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005150303A (ja) * | 2003-11-13 | 2005-06-09 | Toshiba Corp | 磁気抵抗効果素子および磁気メモリ |
JP2006073930A (ja) * | 2004-09-06 | 2006-03-16 | Canon Inc | 磁壁移動を利用した磁気抵抗効果素子の磁化状態の変化方法及び該方法を用いた磁気メモリ素子、固体磁気メモリ |
Non-Patent Citations (1)
Title |
---|
JUNYA SHIBATA ET AL.: "Effect of Spin Current on Uniform Ferromagnetism: Domain Nucleation", PHYSICAL REVIEW LETTERS, vol. 94, 25 February 2005 (2005-02-25), pages 076601 * |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5505312B2 (ja) * | 2008-12-25 | 2014-05-28 | 日本電気株式会社 | 磁気メモリ素子及び磁気ランダムアクセスメモリ |
FR2942347A1 (fr) * | 2009-02-17 | 2010-08-20 | Thales Sa | Dispositif a electronique de spin a commande de deplacement de parois par courants de spin verticaux |
JP2012204802A (ja) * | 2011-03-28 | 2012-10-22 | Toshiba Corp | 磁気記憶素子、磁気記憶装置、および磁気メモリ |
US8625335B2 (en) | 2011-03-28 | 2014-01-07 | Kabushiki Kaisha Toshiba | Magnetic storage element, magnetic storage device, and magnetic memory |
JP2012209005A (ja) * | 2011-03-30 | 2012-10-25 | Hitachi Ltd | 磁気ヘッド及び磁気記憶装置 |
JP2019041098A (ja) * | 2017-08-22 | 2019-03-14 | Tdk株式会社 | スピン流磁気抵抗効果素子及び磁気メモリ |
JP7095434B2 (ja) | 2017-08-22 | 2022-07-05 | Tdk株式会社 | スピン流磁気抵抗効果素子及び磁気メモリ |
Also Published As
Publication number | Publication date |
---|---|
US8315087B2 (en) | 2012-11-20 |
JPWO2008120482A1 (ja) | 2010-07-15 |
JP5201539B2 (ja) | 2013-06-05 |
US20100110777A1 (en) | 2010-05-06 |
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