WO2008120482A1 - 磁気ランダムアクセスメモリ - Google Patents

磁気ランダムアクセスメモリ Download PDF

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Publication number
WO2008120482A1
WO2008120482A1 PCT/JP2008/050574 JP2008050574W WO2008120482A1 WO 2008120482 A1 WO2008120482 A1 WO 2008120482A1 JP 2008050574 W JP2008050574 W JP 2008050574W WO 2008120482 A1 WO2008120482 A1 WO 2008120482A1
Authority
WO
WIPO (PCT)
Prior art keywords
material layer
magnetic material
region
random access
access memory
Prior art date
Application number
PCT/JP2008/050574
Other languages
English (en)
French (fr)
Inventor
Yuukou Katou
Norikazu Ohshima
Original Assignee
Nec Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corporation filed Critical Nec Corporation
Priority to US12/593,417 priority Critical patent/US8315087B2/en
Priority to JP2009507421A priority patent/JP5201539B2/ja
Publication of WO2008120482A1 publication Critical patent/WO2008120482A1/ja

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165Auxiliary circuits
    • G11C11/1653Address circuits or decoders
    • G11C11/1655Bit-line or column circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165Auxiliary circuits
    • G11C11/1659Cell access
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165Auxiliary circuits
    • G11C11/1673Reading or sensing circuits or methods
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165Auxiliary circuits
    • G11C11/1675Writing or programming circuits or methods
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/02Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
    • G11C19/08Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
    • G11C19/0808Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation
    • G11C19/0841Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation using electric current
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B61/00Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00Galvanomagnetic devices
    • H10N50/10Magnetoresistive devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B63/00Resistance change memory devices, e.g. resistive RAM [ReRAM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)

Abstract

 本発明に係るMRAMは、磁気抵抗素子1を備える。磁気抵抗素子1は、磁化方向が反転可能な第1領域11を含む第1磁性体層10と、磁化方向が第1領域11の磁化容易軸方向と平行に固定される第2磁性体層30と、第1磁性体層10と第2磁性体層30に挟まれた非磁性体層20と、を有する。第1磁性体層10の第1領域11の少なくとも一端には、磁壁DWが形成される。第2磁性体層30は、第1領域11と上記一端にオーバーラップするように形成される。データ書き込み時、書き込み電流は、第1磁性体層10と第2磁性体層30との間に流される。
PCT/JP2008/050574 2007-03-29 2008-01-18 磁気ランダムアクセスメモリ WO2008120482A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/593,417 US8315087B2 (en) 2007-03-29 2008-01-18 Magnetic random access memory
JP2009507421A JP5201539B2 (ja) 2007-03-29 2008-01-18 磁気ランダムアクセスメモリ

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007-086567 2007-03-29
JP2007086567 2007-03-29
JP2007-267765 2007-10-15
JP2007267765 2007-10-15

Publications (1)

Publication Number Publication Date
WO2008120482A1 true WO2008120482A1 (ja) 2008-10-09

Family

ID=39808069

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/050574 WO2008120482A1 (ja) 2007-03-29 2008-01-18 磁気ランダムアクセスメモリ

Country Status (3)

Country Link
US (1) US8315087B2 (ja)
JP (1) JP5201539B2 (ja)
WO (1) WO2008120482A1 (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2942347A1 (fr) * 2009-02-17 2010-08-20 Thales Sa Dispositif a electronique de spin a commande de deplacement de parois par courants de spin verticaux
JP2012204802A (ja) * 2011-03-28 2012-10-22 Toshiba Corp 磁気記憶素子、磁気記憶装置、および磁気メモリ
JP2012209005A (ja) * 2011-03-30 2012-10-25 Hitachi Ltd 磁気ヘッド及び磁気記憶装置
JP5505312B2 (ja) * 2008-12-25 2014-05-28 日本電気株式会社 磁気メモリ素子及び磁気ランダムアクセスメモリ
JP2019041098A (ja) * 2017-08-22 2019-03-14 Tdk株式会社 スピン流磁気抵抗効果素子及び磁気メモリ

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US7715244B2 (en) * 2008-02-05 2010-05-11 Unity Semiconductor Corporation Non-volatile register having a memory element and register logic vertically configured on a substrate
WO2009104427A1 (ja) * 2008-02-19 2009-08-27 日本電気株式会社 磁気ランダムアクセスメモリ
WO2011143356A1 (en) * 2010-05-11 2011-11-17 University Of Virginia Patent Foundation Magnetic random access memory device
US9373775B2 (en) * 2012-09-13 2016-06-21 Micron Technology, Inc. Methods of forming magnetic memory cells
JP6219200B2 (ja) 2014-02-27 2017-10-25 株式会社東芝 磁気装置
US9472215B1 (en) * 2015-06-19 2016-10-18 HGST Netherlands B.V. T-shape scissor sensor and method of making the same
CN108666339B (zh) * 2017-03-28 2020-11-13 中芯国际集成电路制造(上海)有限公司 磁性随机存储器及其存储单元的制造方法
US10056126B1 (en) 2017-10-27 2018-08-21 Honeywell International Inc. Magnetic tunnel junction based memory device
JP2020155178A (ja) * 2019-03-20 2020-09-24 キオクシア株式会社 磁気記憶装置

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JP2005150303A (ja) * 2003-11-13 2005-06-09 Toshiba Corp 磁気抵抗効果素子および磁気メモリ
JP2006073930A (ja) * 2004-09-06 2006-03-16 Canon Inc 磁壁移動を利用した磁気抵抗効果素子の磁化状態の変化方法及び該方法を用いた磁気メモリ素子、固体磁気メモリ

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JPH02208680A (ja) 1989-02-08 1990-08-20 Konica Corp 熱ローラ定着装置
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US6775183B2 (en) * 2002-10-22 2004-08-10 Btg International Ltd. Magnetic memory device employing giant magnetoresistance effect
US6834005B1 (en) * 2003-06-10 2004-12-21 International Business Machines Corporation Shiftable magnetic shift register and method of using the same
JP2005093488A (ja) 2003-09-12 2005-04-07 Sony Corp 磁気抵抗効果素子とその製造方法、および磁気メモリ装置とその製造方法
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JP2006073930A (ja) * 2004-09-06 2006-03-16 Canon Inc 磁壁移動を利用した磁気抵抗効果素子の磁化状態の変化方法及び該方法を用いた磁気メモリ素子、固体磁気メモリ

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JUNYA SHIBATA ET AL.: "Effect of Spin Current on Uniform Ferromagnetism: Domain Nucleation", PHYSICAL REVIEW LETTERS, vol. 94, 25 February 2005 (2005-02-25), pages 076601 *

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5505312B2 (ja) * 2008-12-25 2014-05-28 日本電気株式会社 磁気メモリ素子及び磁気ランダムアクセスメモリ
FR2942347A1 (fr) * 2009-02-17 2010-08-20 Thales Sa Dispositif a electronique de spin a commande de deplacement de parois par courants de spin verticaux
JP2012204802A (ja) * 2011-03-28 2012-10-22 Toshiba Corp 磁気記憶素子、磁気記憶装置、および磁気メモリ
US8625335B2 (en) 2011-03-28 2014-01-07 Kabushiki Kaisha Toshiba Magnetic storage element, magnetic storage device, and magnetic memory
JP2012209005A (ja) * 2011-03-30 2012-10-25 Hitachi Ltd 磁気ヘッド及び磁気記憶装置
JP2019041098A (ja) * 2017-08-22 2019-03-14 Tdk株式会社 スピン流磁気抵抗効果素子及び磁気メモリ
JP7095434B2 (ja) 2017-08-22 2022-07-05 Tdk株式会社 スピン流磁気抵抗効果素子及び磁気メモリ

Also Published As

Publication number Publication date
US8315087B2 (en) 2012-11-20
JPWO2008120482A1 (ja) 2010-07-15
JP5201539B2 (ja) 2013-06-05
US20100110777A1 (en) 2010-05-06

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