WO2009057504A1 - 磁気抵抗効果素子、及び磁気ランダムアクセスメモリ、及びその初期化方法 - Google Patents

磁気抵抗効果素子、及び磁気ランダムアクセスメモリ、及びその初期化方法 Download PDF

Info

Publication number
WO2009057504A1
WO2009057504A1 PCT/JP2008/069222 JP2008069222W WO2009057504A1 WO 2009057504 A1 WO2009057504 A1 WO 2009057504A1 JP 2008069222 W JP2008069222 W JP 2008069222W WO 2009057504 A1 WO2009057504 A1 WO 2009057504A1
Authority
WO
WIPO (PCT)
Prior art keywords
ferromagnetic layer
magnetoresistive element
random access
access memory
magnetic random
Prior art date
Application number
PCT/JP2008/069222
Other languages
English (en)
French (fr)
Inventor
Shunsuke Fukami
Nobuyuki Ishiwata
Tetsuhiro Suzuki
Norikazu Ohshima
Kiyokazu Nagahara
Yuukou Katou
Original Assignee
Nec Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corporation filed Critical Nec Corporation
Priority to JP2009539029A priority Critical patent/JP5370773B2/ja
Publication of WO2009057504A1 publication Critical patent/WO2009057504A1/ja

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Abstract

　磁気抵抗効果素子が、長手方向に長い形状を有し、且つ、磁壁移動が起こるように形成された第１強磁性層と、第１強磁性層に対向するように設けられた、磁化が固定された第２強磁性層と、第１強磁性層と第２強磁性層の間に形成される非磁性のスペーサ層と、第１強磁性層の長手方向の一端の近傍の部分に磁気的に結合された第３強磁性層と、第１強磁性層の長手方向の他端の近傍の部分に磁気的に結合された第４強磁性層とを具備する。第１強磁性層及び第２強磁性層は、膜厚方向の磁気異方性を有し、第３強磁性層及び第４強磁性層は、面内方向に磁気異方性を有する。
PCT/JP2008/069222 2007-11-02 2008-10-23 磁気抵抗効果素子、及び磁気ランダムアクセスメモリ、及びその初期化方法 WO2009057504A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009539029A JP5370773B2 (ja) 2007-11-02 2008-10-23 磁気抵抗効果素子、及び磁気ランダムアクセスメモリ、及びその初期化方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007286753 2007-11-02
JP2007-286753 2007-11-02

Publications (1)

Publication Number Publication Date
WO2009057504A1 true WO2009057504A1 (ja) 2009-05-07

Family

ID=40590895

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/069222 WO2009057504A1 (ja) 2007-11-02 2008-10-23 磁気抵抗効果素子、及び磁気ランダムアクセスメモリ、及びその初期化方法

Country Status (2)

Country Link
JP (1) JP5370773B2 (ja)
WO (1) WO2009057504A1 (ja)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010013566A1 (ja) * 2008-07-31 2010-02-04 日本電気株式会社 磁気抵抗効果素子、及び磁気ランダムアクセスメモリ及びその初期化方法
WO2011118461A1 (ja) * 2010-03-23 2011-09-29 日本電気株式会社 磁気メモリ
JP2018088507A (ja) * 2016-11-30 2018-06-07 Tdk株式会社 スピン軌道トルク型磁化反転素子、磁気抵抗効果素子及び磁気メモリ
JP2019153606A (ja) * 2018-02-28 2019-09-12 Tdk株式会社 着磁構造体、磁壁移動型磁気記録素子及び磁気メモリ
EP3605540A1 (en) * 2018-08-02 2020-02-05 TDK Corporation Magnetic domain wall displacement type magnetic recording element and magnetic recording array
WO2021245768A1 (ja) * 2020-06-02 2021-12-09 Tdk株式会社 磁気抵抗効果素子及び磁気記録アレイ
JP7400502B2 (ja) 2019-02-22 2023-12-19 Tdk株式会社 磁壁移動素子及び磁気記録アレイ

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005150303A (ja) * 2003-11-13 2005-06-09 Toshiba Corp 磁気抵抗効果素子および磁気メモリ
JP2005191032A (ja) * 2003-12-24 2005-07-14 Toshiba Corp 磁気記憶装置及び磁気情報の書込み方法
JP2006073930A (ja) * 2004-09-06 2006-03-16 Canon Inc 磁壁移動を利用した磁気抵抗効果素子の磁化状態の変化方法及び該方法を用いた磁気メモリ素子、固体磁気メモリ
JP2007221131A (ja) * 2006-02-17 2007-08-30 Samsung Electronics Co Ltd マグネチックドメイン移動を利用した磁気メモリ
JP2007258460A (ja) * 2006-03-23 2007-10-04 Nec Corp 磁気メモリセル、磁気ランダムアクセスメモリ、半導体装置及び半導体装置の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005150303A (ja) * 2003-11-13 2005-06-09 Toshiba Corp 磁気抵抗効果素子および磁気メモリ
JP2005191032A (ja) * 2003-12-24 2005-07-14 Toshiba Corp 磁気記憶装置及び磁気情報の書込み方法
JP2006073930A (ja) * 2004-09-06 2006-03-16 Canon Inc 磁壁移動を利用した磁気抵抗効果素子の磁化状態の変化方法及び該方法を用いた磁気メモリ素子、固体磁気メモリ
JP2007221131A (ja) * 2006-02-17 2007-08-30 Samsung Electronics Co Ltd マグネチックドメイン移動を利用した磁気メモリ
JP2007258460A (ja) * 2006-03-23 2007-10-04 Nec Corp 磁気メモリセル、磁気ランダムアクセスメモリ、半導体装置及び半導体装置の製造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
RAVELOSONA, D. ET AL.: "Current-driven narrow domain wall depinning in perpendicular spin valves", IEEE TRANSACTIONS ON MAGNETICS, vol. 41, no. 10, October 2005 (2005-10-01), pages 2618 - 2620 *

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010013566A1 (ja) * 2008-07-31 2010-02-04 日本電気株式会社 磁気抵抗効果素子、及び磁気ランダムアクセスメモリ及びその初期化方法
WO2011118461A1 (ja) * 2010-03-23 2011-09-29 日本電気株式会社 磁気メモリ
JPWO2011118461A1 (ja) * 2010-03-23 2013-07-04 日本電気株式会社 磁気メモリ
JP2018088507A (ja) * 2016-11-30 2018-06-07 Tdk株式会社 スピン軌道トルク型磁化反転素子、磁気抵抗効果素子及び磁気メモリ
JP2019153606A (ja) * 2018-02-28 2019-09-12 Tdk株式会社 着磁構造体、磁壁移動型磁気記録素子及び磁気メモリ
JP7056234B2 (ja) 2018-02-28 2022-04-19 Tdk株式会社 着磁構造体、磁壁移動型磁気記録素子及び磁気メモリ
EP3605540A1 (en) * 2018-08-02 2020-02-05 TDK Corporation Magnetic domain wall displacement type magnetic recording element and magnetic recording array
CN110797059A (zh) * 2018-08-02 2020-02-14 Tdk株式会社 磁壁移动型磁记录元件及磁记录阵列
US11335849B2 (en) 2018-08-02 2022-05-17 Tdk Corporation Magnetic domain wall displacement type magnetic recording element and magnetic recording array
JP7400502B2 (ja) 2019-02-22 2023-12-19 Tdk株式会社 磁壁移動素子及び磁気記録アレイ
WO2021245768A1 (ja) * 2020-06-02 2021-12-09 Tdk株式会社 磁気抵抗効果素子及び磁気記録アレイ

Also Published As

Publication number Publication date
JPWO2009057504A1 (ja) 2011-03-10
JP5370773B2 (ja) 2013-12-18

Similar Documents

Publication Publication Date Title
WO2009019949A1 (ja) 磁気ランダムアクセスメモリ及びその製造方法
WO2009060749A1 (ja) 磁気抵抗効果素子、及び磁気ランダムアクセスメモリ
WO2009054180A1 (ja) 磁気抵抗効果素子及び磁気ランダムアクセスメモリ
WO2009001706A1 (ja) 磁気抵抗効果素子、および磁気ランダムアクセスメモリ
WO2009057504A1 (ja) 磁気抵抗効果素子、及び磁気ランダムアクセスメモリ、及びその初期化方法
WO2009019947A1 (ja) 磁壁ランダムアクセスメモリ
WO2008099626A1 (ja) 磁気抵抗効果素子、および磁気ランダムアクセスメモリ
WO2008120482A1 (ja) 磁気ランダムアクセスメモリ
EP1743386A4 (en) SPIN TRANSFER MAGNETIC ELEMENT WITH FREE LAYERS WITH STRONG VERTICAL ANISOTROPY AND IN-LEVEL BALANCE MAGNETIZATION
JP2016197754A5 (ja)
TW200737185A (en) Magnetic memory device and method for driving the same
WO2007035786A3 (en) Magnetic devices having stabilized free ferromagnetic layer or multilayered free ferromagnetic layer
JP2012533189A5 (ja)
GB201319331D0 (en) Magnetic stacks with perpendicular magnetic anisotropy for spin momentum transfer magnetoresistive random access memory
TW200617953A (en) Magnetic random access memory array with coupled soft-adjacent magnetic layer
WO2008050045A3 (fr) Dispositif magnetique a aimantation perpendiculaire et a couche intercalaire compensatrice d'interactions
GB201316237D0 (en) Magnetic tunnel junction with iron dusting layer between free layer and tunnel barrier
TW200629272A (en) Magnetic memory and its manufacturing method
ATE540407T1 (de) Magnetspeicher mit magnettunnelübergang
SG153012A1 (en) Magnetic element with thermally-assisted writing
WO2005112034A3 (en) Spin barrier enhanced magnetoresistance effect element and magnetic memory using the same
JP2012099816A5 (ja)
WO2011149274A3 (ko) 자기적으로 연결되고 수직 자기 이방성을 갖도록 하는 비정질 버퍼층을 가지는 자기 터널 접합 소자
TW200744083A (en) Magnetic recording medium and magnetic storage unit
WO2008105095A1 (ja) 垂直磁気記録媒体および磁気記録装置

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08843894

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 2009539029

Country of ref document: JP

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08843894

Country of ref document: EP

Kind code of ref document: A1