WO2008099626A1 - 磁気抵抗効果素子、および磁気ランダムアクセスメモリ - Google Patents

磁気抵抗効果素子、および磁気ランダムアクセスメモリ Download PDF

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Publication number
WO2008099626A1
WO2008099626A1 PCT/JP2008/050196 JP2008050196W WO2008099626A1 WO 2008099626 A1 WO2008099626 A1 WO 2008099626A1 JP 2008050196 W JP2008050196 W JP 2008050196W WO 2008099626 A1 WO2008099626 A1 WO 2008099626A1
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WO
WIPO (PCT)
Prior art keywords
layer
random access
access memory
sensing
magnetic
Prior art date
Application number
PCT/JP2008/050196
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English (en)
French (fr)
Inventor
Shunsuke Fukami
Original Assignee
Nec Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corporation filed Critical Nec Corporation
Priority to JP2008558018A priority Critical patent/JP5224127B2/ja
Priority to US12/526,994 priority patent/US8023315B2/en
Publication of WO2008099626A1 publication Critical patent/WO2008099626A1/ja

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • H01F10/3272—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/329—Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Abstract

　磁気ランダムアクセスメモリは、磁化自由層、絶縁層、磁化固定層を含む積層構造を備える。磁化自由層は、センス層と、センス層に隣接して設けられる第１の結合層と、第１の結合層に隣接してセンス層とは反対側に設けられるストレージ層を備える。センス層とストレージ層は第１の結合層１２を介して少なくとも一部分が磁気的に結合している。ストレージ層の磁気異方性はセンス層の磁気異方性よりも大きい。センス層の飽和磁化と体積の積は、ストレージ層の飽和磁化と体積の積よりも大きい。このような構成により、十分な熱安定性を維持した上で、書き込みに要する電流値が低減された磁気ランダムアクセスメモリを提供することができる。
PCT/JP2008/050196 2007-02-13 2008-01-10 磁気抵抗効果素子、および磁気ランダムアクセスメモリ WO2008099626A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2008558018A JP5224127B2 (ja) 2007-02-13 2008-01-10 磁気抵抗効果素子、および磁気ランダムアクセスメモリ
US12/526,994 US8023315B2 (en) 2007-02-13 2008-01-10 Magnetoresistive effect element and magnetic random access memory

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007031769 2007-02-13
JP2007-031769 2007-02-13

Publications (1)

Publication Number Publication Date
WO2008099626A1 true WO2008099626A1 (ja) 2008-08-21

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/050196 WO2008099626A1 (ja) 2007-02-13 2008-01-10 磁気抵抗効果素子、および磁気ランダムアクセスメモリ

Country Status (3)

Country Link
US (1) US8023315B2 (ja)
JP (2) JP5224127B2 (ja)
WO (1) WO2008099626A1 (ja)

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JP2018067701A (ja) * 2016-10-20 2018-04-26 コリア ユニバーシティ リサーチ アンド ビジネス ファウンデーションＫｏｒｅａ Ｕｎｉｖｅｒｓｉｔｙ Ｒｅｓｅａｒｃｈ Ａｎｄ Ｂｕｓｉｎｅｓｓ Ｆｏｕｎｄａｔｉｏｎ 磁気トンネル接合素子及び磁気メモリ素子
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WO2019138535A1 (ja) * 2018-01-12 2019-07-18 Tdk株式会社 磁壁移動型磁気記録素子及び磁気記録アレイ
JP6481805B1 (ja) * 2018-01-12 2019-03-13 Tdk株式会社 磁壁移動型磁気記録素子及び磁気記録アレイ
JP2019204949A (ja) * 2018-05-22 2019-11-28 Tdk株式会社 スピン流磁化回転型磁気抵抗効果素子、及び磁気メモリ
JP7124788B2 (ja) 2018-05-22 2022-08-24 Tdk株式会社 スピン流磁化回転型磁気抵抗効果素子、及び磁気メモリ

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