WO2009078202A1 - 磁気メモリー素子、その駆動方法及び不揮発性記憶装置 - Google Patents

磁気メモリー素子、その駆動方法及び不揮発性記憶装置 Download PDF

Info

Publication number
WO2009078202A1
WO2009078202A1 PCT/JP2008/065410 JP2008065410W WO2009078202A1 WO 2009078202 A1 WO2009078202 A1 WO 2009078202A1 JP 2008065410 W JP2008065410 W JP 2008065410W WO 2009078202 A1 WO2009078202 A1 WO 2009078202A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
memory element
magnetic memory
magnetic
driving
Prior art date
Application number
PCT/JP2008/065410
Other languages
English (en)
French (fr)
Inventor
Yasushi Ogimoto
Haruo Kawakami
Original Assignee
Fuji Electric Holdings Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Holdings Co., Ltd. filed Critical Fuji Electric Holdings Co., Ltd.
Priority to US12/734,292 priority Critical patent/US8279661B2/en
Priority to JP2009546168A priority patent/JP5062538B2/ja
Priority to KR1020107009651A priority patent/KR101397654B1/ko
Priority to EP08862686.6A priority patent/EP2224477B1/en
Publication of WO2009078202A1 publication Critical patent/WO2009078202A1/ja

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/04—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding disturbances due to temperature effects
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/10—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having two electrodes, e.g. diodes or MIM elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Temperature-Responsive Valves (AREA)

Abstract

　クロスポイント型メモリを実現するために、フリー層５と、非磁性層４と、ピン層３とを備えるスピンバルブ構造を有する磁気メモリー素子１０であり、フリー層５の一方の面に別の非磁性層６を備え、さらにその別の非磁性層６をフリー層５ともに挟むように磁気特性が温度に応じて変化する磁性材料の磁気変化層７を備える。磁気変化層は、温度に応じて磁化が増大し、かつ磁化方向が膜面に斜めとなる磁性層を設けるものとすることもできる。
PCT/JP2008/065410 2007-12-19 2008-08-28 磁気メモリー素子、その駆動方法及び不揮発性記憶装置 WO2009078202A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US12/734,292 US8279661B2 (en) 2007-12-19 2008-08-28 Magnetic memory element, driving method for the same, and nonvolatile storage device
JP2009546168A JP5062538B2 (ja) 2007-12-19 2008-08-28 磁気メモリー素子、その駆動方法及び不揮発性記憶装置
KR1020107009651A KR101397654B1 (ko) 2007-12-19 2008-08-28 자기 메모리 소자, 그 구동 방법 및 불휘발성 기억장치
EP08862686.6A EP2224477B1 (en) 2007-12-19 2008-08-28 Magnetic memory element, method for driving the magnetic memory element, and nonvolatile storage device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-327175 2007-12-19
JP2007327175 2007-12-19

Publications (1)

Publication Number Publication Date
WO2009078202A1 true WO2009078202A1 (ja) 2009-06-25

Family

ID=40795321

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/065410 WO2009078202A1 (ja) 2007-12-19 2008-08-28 磁気メモリー素子、その駆動方法及び不揮発性記憶装置

Country Status (5)

Country Link
US (1) US8279661B2 (ja)
EP (1) EP2224477B1 (ja)
JP (1) JP5062538B2 (ja)
KR (1) KR101397654B1 (ja)
WO (1) WO2009078202A1 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011033873A1 (ja) * 2009-09-17 2011-03-24 富士電機ホールディングス株式会社 磁気抵抗素子及びそれを用いた不揮発性半導体記憶装置
US20120187945A1 (en) * 2009-07-27 2012-07-26 Fuji Electric Co. Ltd Non-contact current sensor
JP2012533190A (ja) * 2009-07-13 2012-12-20 シーゲイト テクノロジー エルエルシー 静磁場によりアシストされた抵抗性検知素子
WO2018198713A1 (ja) * 2017-04-28 2018-11-01 国立研究開発法人産業技術総合研究所 磁気素子

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102023626B1 (ko) 2013-01-25 2019-09-20 삼성전자 주식회사 스핀 홀 효과를 이용한 메모리 소자와 그 제조 및 동작방법
US9741927B2 (en) 2014-04-10 2017-08-22 Samsung Electronics Co., Ltd. Method and system for providing magnetic junctions having a gradient in magnetic ordering temperature
KR102466342B1 (ko) 2015-06-11 2022-11-15 삼성전자주식회사 자기 메모리 소자
JP2017139399A (ja) * 2016-02-05 2017-08-10 Tdk株式会社 磁気メモリ
JP2018152432A (ja) 2017-03-10 2018-09-27 東芝メモリ株式会社 磁気記憶装置
US10971223B2 (en) * 2018-09-28 2021-04-06 Taiwan Semiconductor Manufacturing Company Ltd. Phase change memory operation method and circuit

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006080287A (ja) * 2004-09-09 2006-03-23 Toshiba Corp 磁気ランダムアクセスメモリ
JP2006128579A (ja) * 2004-11-01 2006-05-18 Sony Corp 記憶素子及びメモリ
JP2007019179A (ja) * 2005-07-06 2007-01-25 Toshiba Corp 磁気抵抗効果素子および磁気メモリ
JP2007150265A (ja) * 2005-10-28 2007-06-14 Toshiba Corp 磁気抵抗効果素子および磁気記憶装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001084756A (ja) * 1999-09-17 2001-03-30 Sony Corp 磁化駆動方法、磁気機能素子および磁気装置
JP3849460B2 (ja) * 2001-05-29 2006-11-22 ソニー株式会社 磁気抵抗効果素子、磁気抵抗効果型磁気センサ、および磁気抵抗効果型磁気ヘッド
JP3873015B2 (ja) * 2002-09-30 2007-01-24 株式会社東芝 磁気メモリ
US6967863B2 (en) * 2004-02-25 2005-11-22 Grandis, Inc. Perpendicular magnetization magnetic element utilizing spin transfer
US7313013B2 (en) * 2004-11-18 2007-12-25 International Business Machines Corporation Spin-current switchable magnetic memory element and method of fabricating the memory element
US7230265B2 (en) * 2005-05-16 2007-06-12 International Business Machines Corporation Spin-polarization devices using rare earth-transition metal alloys
TWI320929B (en) * 2006-04-18 2010-02-21 Ind Tech Res Inst Structure and access method for magnetic memory cell structure and circuit of magnetic memory
JP4874884B2 (ja) * 2007-07-11 2012-02-15 株式会社東芝 磁気記録素子及び磁気記録装置
US7935435B2 (en) * 2008-08-08 2011-05-03 Seagate Technology Llc Magnetic memory cell construction
US7936598B2 (en) * 2009-04-28 2011-05-03 Seagate Technology Magnetic stack having assist layer

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006080287A (ja) * 2004-09-09 2006-03-23 Toshiba Corp 磁気ランダムアクセスメモリ
JP2006128579A (ja) * 2004-11-01 2006-05-18 Sony Corp 記憶素子及びメモリ
JP2007019179A (ja) * 2005-07-06 2007-01-25 Toshiba Corp 磁気抵抗効果素子および磁気メモリ
JP2007150265A (ja) * 2005-10-28 2007-06-14 Toshiba Corp 磁気抵抗効果素子および磁気記憶装置

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
D.D. DJAYAPRAWIRA ET AL.: "230% room-temperature magnetoresistance in CoFeB/MgO/CoFeB magnetic tunnel junctions", APPLIED PHYSICS LETTERS, vol. 86, 2005, pages 092502
J. HAYAKAWA ET AL.: "Current-induced magnetization switching in MgO barrier based magnetic tunnel junctions with CoFeB/Ru/CoFeB synthetic ferrimagnetic free layer", JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 45, no. 40, 2006, pages LI057 - LI060, XP001517678, DOI: doi:10.1143/JJAP.45.L1057
See also references of EP2224477A4

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012533190A (ja) * 2009-07-13 2012-12-20 シーゲイト テクノロジー エルエルシー 静磁場によりアシストされた抵抗性検知素子
JP2013153194A (ja) * 2009-07-13 2013-08-08 Seagate Technology Llc 静磁場によりアシストされた抵抗性検知素子
US9041388B2 (en) * 2009-07-27 2015-05-26 Iii Holdings 3, Llc Non-contact current sensor
US20120187945A1 (en) * 2009-07-27 2012-07-26 Fuji Electric Co. Ltd Non-contact current sensor
US9939466B2 (en) 2009-07-27 2018-04-10 Iii Holdings 3, Llc Non-contact current sensor
JPWO2011033873A1 (ja) * 2009-09-17 2013-02-14 富士電機株式会社 磁気抵抗素子及びそれを用いた不揮発性半導体記憶装置
US8995179B2 (en) 2009-09-17 2015-03-31 Fuji Electric Co., Ltd. Magnetoresistance element and non-volatile semiconductor storage device using same magnetoresistance element
JP5578448B2 (ja) * 2009-09-17 2014-08-27 富士電機株式会社 磁気抵抗素子及びそれを用いた不揮発性半導体記憶装置
US9525127B2 (en) 2009-09-17 2016-12-20 Iii Holdings 3, Llc Magnetoresistance element and non-volatile semiconductor storage device using same magnetoresistance element
WO2011033873A1 (ja) * 2009-09-17 2011-03-24 富士電機ホールディングス株式会社 磁気抵抗素子及びそれを用いた不揮発性半導体記憶装置
US10468591B2 (en) 2009-09-17 2019-11-05 Iii Holdings 3, Llc Magnetoresistance element and non-volatile semiconductor storage device using same magnetoresistance element
US10756261B2 (en) 2009-09-17 2020-08-25 Iii Holdings 3, Ltd. Magnetoresistance element and non-volatile semiconductor storage device using same magnetoresistance element
WO2018198713A1 (ja) * 2017-04-28 2018-11-01 国立研究開発法人産業技術総合研究所 磁気素子
JPWO2018198713A1 (ja) * 2017-04-28 2019-11-07 国立研究開発法人産業技術総合研究所 磁気素子
US10998490B2 (en) 2017-04-28 2021-05-04 National Institute Of Advanced Industrial Science And Technology Magnetic element

Also Published As

Publication number Publication date
KR20100094974A (ko) 2010-08-27
EP2224477A1 (en) 2010-09-01
JP5062538B2 (ja) 2012-10-31
EP2224477B1 (en) 2017-05-31
US20100284217A1 (en) 2010-11-11
US8279661B2 (en) 2012-10-02
JPWO2009078202A1 (ja) 2011-04-28
KR101397654B1 (ko) 2014-05-22
EP2224477A4 (en) 2013-08-07

Similar Documents

Publication Publication Date Title
WO2009078202A1 (ja) 磁気メモリー素子、その駆動方法及び不揮発性記憶装置
US9608039B1 (en) Magnetic junctions programmable using spin-orbit interaction torque in the absence of an external magnetic field
SG153012A1 (en) Magnetic element with thermally-assisted writing
US8254162B2 (en) Method and system for providing magnetic tunneling junctions usable in spin transfer torque magnetic memories
US8159866B2 (en) Method and system for providing dual magnetic tunneling junctions usable in spin transfer torque magnetic memories
US8796796B2 (en) Method and system for providing magnetic junctions having improved polarization enhancement and reference layers
US20180219152A1 (en) Magnetic devices including magnetic junctions having tilted easy axes and enhanced damping programmable using spin orbit torque
WO2009054180A1 (ja) 磁気抵抗効果素子及び磁気ランダムアクセスメモリ
CN102804279B (zh) 用于提供反向双磁隧道结元件的方法和系统
WO2007035786A3 (en) Magnetic devices having stabilized free ferromagnetic layer or multilayered free ferromagnetic layer
US20130154035A1 (en) Method and system for providing a magnetic tunneling junction using thermally assisted switching
TW200626922A (en) Magnetic sensor using giant magnetoresistive elements and method for manufacturing the same
KR102534011B1 (ko) 스핀 토크 전가를 이용하는 프로그램 가능한 자기 탄성 자유막을 갖는 자기 접합
US20110141804A1 (en) Method and system for providing dual magnetic tunneling junctions usable in spin transfer torque magnetic memories
WO2007047311A3 (en) Spin transfer based magnetic storage cells utilizing granular free layers and magnetic memories using such cells
WO2009031231A1 (ja) 半導体装置
WO2005079528A3 (en) Spin transfer magnetic element having low saturation magnetization free layers
US8649214B2 (en) Magnetic memory including magnetic memory cells integrated with a magnetic shift register and methods thereof
WO2009001706A1 (ja) 磁気抵抗効果素子、および磁気ランダムアクセスメモリ
WO2009060749A1 (ja) 磁気抵抗効果素子、及び磁気ランダムアクセスメモリ
WO2008120482A1 (ja) 磁気ランダムアクセスメモリ
WO2005082061A3 (en) Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization
WO2010120918A3 (en) Magnetic tunnel junction (mtj) and methods, and magnetic random access memory (mram) employing same
JP2008507854A5 (ja)
WO2009019947A1 (ja) 磁壁ランダムアクセスメモリ

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08862686

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 2009546168

Country of ref document: JP

ENP Entry into the national phase

Ref document number: 20107009651

Country of ref document: KR

Kind code of ref document: A

REEP Request for entry into the european phase

Ref document number: 2008862686

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 2008862686

Country of ref document: EP

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 12734292

Country of ref document: US