WO2009031231A1 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
WO2009031231A1
WO2009031231A1 PCT/JP2007/067472 JP2007067472W WO2009031231A1 WO 2009031231 A1 WO2009031231 A1 WO 2009031231A1 JP 2007067472 W JP2007067472 W JP 2007067472W WO 2009031231 A1 WO2009031231 A1 WO 2009031231A1
Authority
WO
WIPO (PCT)
Prior art keywords
magnetoresistive element
coupled
layer side
free layer
pinned layer
Prior art date
Application number
PCT/JP2007/067472
Other languages
English (en)
French (fr)
Inventor
Yasuhiro Taniguchi
Kosuke Okuyama
Original Assignee
Renesas Technology Corp.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Technology Corp. filed Critical Renesas Technology Corp.
Priority to PCT/JP2007/067472 priority Critical patent/WO2009031231A1/ja
Priority to PCT/JP2008/066164 priority patent/WO2009031677A1/ja
Priority to US12/676,387 priority patent/US20100188891A1/en
Priority to JP2009531302A priority patent/JPWO2009031677A1/ja
Publication of WO2009031231A1 publication Critical patent/WO2009031231A1/ja

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G11C14/0054—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell
    • G11C14/0081—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell and the nonvolatile element is a magnetic RAM [MRAM] element or ferromagnetic cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1677—Verifying circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G11C7/106—Data output latches

Abstract

　記憶データの信頼性を向上させる。 　第１磁気抵抗素子（２０３）及び第２磁気抵抗素子（２０４）を設ける。上記第１磁気抵抗素子及び上記第２磁気抵抗素子は、スピンの向きを変更可能なフリー層と、スピンの向きが固定されたピン層とを含む。上記第１磁気抵抗素子は、フリー層側が第１トランジスタ（２０５）に結合され、ピン層側が第１電源端子（２０７）に結合される。上記第２磁気抵抗素子は、フリー層側が第２トランジスタ（２０６）に結合され、ピン層側が第１電源端子（２０７）に結合される。磁気抵抗メモリセルにおける不所望な抵抗状態変化を阻止することによって記憶データの信頼性を向上させる。
PCT/JP2007/067472 2007-09-07 2007-09-07 半導体装置 WO2009031231A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
PCT/JP2007/067472 WO2009031231A1 (ja) 2007-09-07 2007-09-07 半導体装置
PCT/JP2008/066164 WO2009031677A1 (ja) 2007-09-07 2008-09-08 半導体装置
US12/676,387 US20100188891A1 (en) 2007-09-07 2008-09-08 Semiconductor device
JP2009531302A JPWO2009031677A1 (ja) 2007-09-07 2008-09-08 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/067472 WO2009031231A1 (ja) 2007-09-07 2007-09-07 半導体装置

Publications (1)

Publication Number Publication Date
WO2009031231A1 true WO2009031231A1 (ja) 2009-03-12

Family

ID=40428554

Family Applications (2)

Application Number Title Priority Date Filing Date
PCT/JP2007/067472 WO2009031231A1 (ja) 2007-09-07 2007-09-07 半導体装置
PCT/JP2008/066164 WO2009031677A1 (ja) 2007-09-07 2008-09-08 半導体装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/066164 WO2009031677A1 (ja) 2007-09-07 2008-09-08 半導体装置

Country Status (3)

Country Link
US (1) US20100188891A1 (ja)
JP (1) JPWO2009031677A1 (ja)
WO (2) WO2009031231A1 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010279035A (ja) * 2009-05-26 2010-12-09 Crocus Technology Sa 磁気トンネル接合を使用する不揮発性論理装置
WO2014104131A1 (ja) * 2012-12-28 2014-07-03 国立大学法人東北大学 記憶装置、メモリセル及びデータ書き込み方法
JP2015018592A (ja) * 2013-07-12 2015-01-29 凸版印刷株式会社 不揮発性メモリセルおよび不揮発性メモリ
WO2015041305A1 (ja) * 2013-09-20 2015-03-26 国立大学法人東北大学 メモリセル及び記憶装置

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US8421164B2 (en) * 2010-01-05 2013-04-16 Micron Technology, Inc. Memory cell array with semiconductor selection device for multiple memory cells
JP5502635B2 (ja) * 2010-03-08 2014-05-28 株式会社東芝 半導体記憶装置
FR2970592B1 (fr) 2011-01-19 2013-02-15 Centre Nat Rech Scient Cellule mémoire volatile/non volatile programmable
FR2970589B1 (fr) * 2011-01-19 2013-02-15 Centre Nat Rech Scient Cellule mémoire volatile/non volatile
FR2970593B1 (fr) * 2011-01-19 2013-08-02 Centre Nat Rech Scient Cellule mémoire volatile/non volatile compacte
FR2976711B1 (fr) * 2011-06-15 2014-01-31 Centre Nat Rech Scient Cellule memoire avec memorisation volatile et non volatile
JP5597169B2 (ja) * 2011-07-28 2014-10-01 株式会社東芝 半導体集積回路、プロセッサ
JP5733575B2 (ja) * 2011-09-12 2015-06-10 国立大学法人東北大学 半導体記憶装置
JP2013125513A (ja) * 2011-12-16 2013-06-24 Samsung Electronics Co Ltd 不揮発性半導体記憶装置及びその管理方法
JP5480321B2 (ja) * 2012-03-21 2014-04-23 株式会社東芝 磁気メモリ及びその製造方法
FR2990089B1 (fr) * 2012-04-27 2014-04-11 Commissariat Energie Atomique Dispositif logique reprogrammable resistant aux rayonnements.
JP5814867B2 (ja) * 2012-06-27 2015-11-17 株式会社東芝 半導体記憶装置
WO2014022304A1 (en) * 2012-07-30 2014-02-06 The Regents Of The University Of California Multiple-bits-per-cell voltage-controlled magnetic memory
FR3004577A1 (ja) 2013-04-15 2014-10-17 Commissariat Energie Atomique
FR3004576B1 (fr) 2013-04-15 2019-11-29 Commissariat A L'energie Atomique Et Aux Energies Alternatives Cellule memoire avec memorisation de donnees non volatile
FR3008219B1 (fr) * 2013-07-05 2016-12-09 Commissariat Energie Atomique Dispositif a memoire non volatile
US9691471B2 (en) * 2014-09-15 2017-06-27 Taiwan Semiconductor Manufacturing Company, Ltd. SRAM cells with vertical gate-all-round MOSFETs
KR20170051039A (ko) * 2015-11-02 2017-05-11 에스케이하이닉스 주식회사 반도체 장치 및 그 구동 방법
JP7007173B2 (ja) * 2016-12-16 2022-01-24 ソニーセミコンダクタソリューションズ株式会社 半導体装置
CN110544499B (zh) * 2018-05-28 2021-07-13 联华电子股份有限公司 静态随机存取存储器结构
US11152067B2 (en) * 2018-08-30 2021-10-19 Sandisk Technologies Llc Content addressable memory with spin-orbit torque devices
JP2020187811A (ja) * 2019-05-15 2020-11-19 キオクシア株式会社 半導体記憶装置
US11107530B2 (en) 2019-12-31 2021-08-31 Taiwan Semiconductor Manufacturing Company Limited Non-volatile static random access memory (nvSRAM) with multiple magnetic tunnel junction cells
TWI770950B (zh) 2020-04-28 2022-07-11 台灣積體電路製造股份有限公司 記憶體單元、記憶體系統與記憶體單元的操作方法
US11404424B2 (en) * 2020-04-28 2022-08-02 Taiwan Semiconductor Manufacturing Company Limited Static random access memory with magnetic tunnel junction cells
US20230106517A1 (en) * 2021-10-04 2023-04-06 Invention And Collaboration Laboratory Pte. Ltd. Sram cell structure
TWI805219B (zh) * 2022-02-10 2023-06-11 力晶積成電子製造股份有限公司 非揮發性靜態隨機存取記憶體

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WO2003105156A1 (ja) * 2002-06-05 2003-12-18 松下電器産業株式会社 不揮発性メモリ回路及びその駆動方法並びにそのメモリ回路を用いた半導体装置
JP2007052879A (ja) * 2005-08-19 2007-03-01 Sony Corp 不揮発性メモリセルおよび記憶装置と不揮発性論理回路
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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010279035A (ja) * 2009-05-26 2010-12-09 Crocus Technology Sa 磁気トンネル接合を使用する不揮発性論理装置
WO2014104131A1 (ja) * 2012-12-28 2014-07-03 国立大学法人東北大学 記憶装置、メモリセル及びデータ書き込み方法
US9318170B2 (en) 2012-12-28 2016-04-19 Tohoku University Storage device, memory cell, and data writing method
JPWO2014104131A1 (ja) * 2012-12-28 2017-01-12 国立大学法人東北大学 記憶装置、メモリセル及びデータ書き込み方法
JP2015018592A (ja) * 2013-07-12 2015-01-29 凸版印刷株式会社 不揮発性メモリセルおよび不揮発性メモリ
WO2015041305A1 (ja) * 2013-09-20 2015-03-26 国立大学法人東北大学 メモリセル及び記憶装置
JPWO2015041305A1 (ja) * 2013-09-20 2017-03-02 国立大学法人東北大学 メモリセル及び記憶装置
US9740255B2 (en) 2013-09-20 2017-08-22 Tohoku University Memory cell and storage device
TWI635488B (zh) * 2013-09-20 2018-09-11 國立大學法人東北大學 存儲器單元和存儲裝置

Also Published As

Publication number Publication date
JPWO2009031677A1 (ja) 2010-12-16
US20100188891A1 (en) 2010-07-29
WO2009031677A1 (ja) 2009-03-12

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