FR2970593B1 - Cellule mémoire volatile/non volatile compacte - Google Patents

Cellule mémoire volatile/non volatile compacte

Info

Publication number
FR2970593B1
FR2970593B1 FR1150407A FR1150407A FR2970593B1 FR 2970593 B1 FR2970593 B1 FR 2970593B1 FR 1150407 A FR1150407 A FR 1150407A FR 1150407 A FR1150407 A FR 1150407A FR 2970593 B1 FR2970593 B1 FR 2970593B1
Authority
FR
France
Prior art keywords
volatile
transistor
coupled
memory cell
compatible
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1150407A
Other languages
English (en)
Other versions
FR2970593A1 (fr
Inventor
Yoann Guillemenet
Lionel Torres
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Universite Montpellier 2 Sciences et Techniques
Original Assignee
Centre National de la Recherche Scientifique CNRS
Universite Montpellier 2 Sciences et Techniques
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National de la Recherche Scientifique CNRS, Universite Montpellier 2 Sciences et Techniques filed Critical Centre National de la Recherche Scientifique CNRS
Priority to FR1150407A priority Critical patent/FR2970593B1/fr
Priority to EP12701708.5A priority patent/EP2666165B1/fr
Priority to PCT/EP2012/050800 priority patent/WO2012098197A1/fr
Priority to US13/980,529 priority patent/US9224463B2/en
Publication of FR2970593A1 publication Critical patent/FR2970593A1/fr
Application granted granted Critical
Publication of FR2970593B1 publication Critical patent/FR2970593B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/003—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1693—Timing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G11C14/0054—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell
    • G11C14/0081—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell and the nonvolatile element is a magnetic RAM [MRAM] element or ferromagnetic cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G11C14/0054—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell
    • G11C14/009—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell and the nonvolatile element is a resistive RAM element, i.e. programmable resistors, e.g. formed of phase change or chalcogenide material
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/173—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components
    • H03K19/177—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components arranged in matrix form
    • H03K19/17748—Structural details of configuration resources
    • H03K19/1776—Structural details of configuration resources for memories

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Static Random-Access Memory (AREA)

Abstract

L'invention concerne un dispositif mémoire comprenant au moins une cellule mémoire comprenant : un premier transistor (102) couplé entre un premier noeud de mémorisation (106) et une première tension d'alimentation (GND, V ) ; un deuxième transistor (104) couplé entre un deuxième noeud de mémorisation (108) et la première tension d'alimentation, une borne de commande du premier transistor étant couplée au deuxième noeud de mémorisation, et une borne de commande du deuxième transistor étant couplée au premier noeud de mémorisation ; et un seul élément à commutation de résistance (202), l'unique élément à commutation de résistance étant couplé en série avec le premier transistor et étant programmable pour avoir l'une d'une première et d'une deuxième résistance (R , R ).
FR1150407A 2011-01-19 2011-01-19 Cellule mémoire volatile/non volatile compacte Active FR2970593B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR1150407A FR2970593B1 (fr) 2011-01-19 2011-01-19 Cellule mémoire volatile/non volatile compacte
EP12701708.5A EP2666165B1 (fr) 2011-01-19 2012-01-19 Cellule compacte de mémoire volatile / non volatile
PCT/EP2012/050800 WO2012098197A1 (fr) 2011-01-19 2012-01-19 Cellule compacte de mémoire volatile / non volatile
US13/980,529 US9224463B2 (en) 2011-01-19 2012-01-19 Compact volatile/non-volatile memory cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1150407A FR2970593B1 (fr) 2011-01-19 2011-01-19 Cellule mémoire volatile/non volatile compacte

Publications (2)

Publication Number Publication Date
FR2970593A1 FR2970593A1 (fr) 2012-07-20
FR2970593B1 true FR2970593B1 (fr) 2013-08-02

Family

ID=45558039

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1150407A Active FR2970593B1 (fr) 2011-01-19 2011-01-19 Cellule mémoire volatile/non volatile compacte

Country Status (4)

Country Link
US (1) US9224463B2 (fr)
EP (1) EP2666165B1 (fr)
FR (1) FR2970593B1 (fr)
WO (1) WO2012098197A1 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2970589B1 (fr) 2011-01-19 2013-02-15 Centre Nat Rech Scient Cellule mémoire volatile/non volatile
WO2013147831A1 (fr) * 2012-03-30 2013-10-03 Intel Corporation Eléments de mémoire à base de couple de transfert de spin pour matrices de dispositifs programmables
FR3004576B1 (fr) 2013-04-15 2019-11-29 Commissariat A L'energie Atomique Et Aux Energies Alternatives Cellule memoire avec memorisation de donnees non volatile
FR3004577A1 (fr) 2013-04-15 2014-10-17 Commissariat Energie Atomique
FR3008219B1 (fr) 2013-07-05 2016-12-09 Commissariat Energie Atomique Dispositif a memoire non volatile
CN106059567A (zh) * 2016-05-27 2016-10-26 中电海康集团有限公司 一种基于stt‑mram的现场可编程门阵列
US10756267B2 (en) * 2017-04-11 2020-08-25 National Chiao Tung University Nonvolatile memory comprising variable resistance transistors and method for operating the same
CN111681694B (zh) * 2019-03-11 2022-05-17 华邦电子股份有限公司 电阻式存储器电路

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4006469A (en) 1975-12-16 1977-02-01 International Business Machines Corporation Data storage cell with transistors operating at different threshold voltages
DE19548053A1 (de) 1995-12-21 1997-07-03 Siemens Ag Verfahren zum Betrieb einer SRAM MOS-Transistor Speicherzelle
US6172899B1 (en) * 1998-05-08 2001-01-09 Micron Technology. Inc. Static-random-access-memory cell
JP3983969B2 (ja) 2000-03-08 2007-09-26 株式会社東芝 不揮発性半導体記憶装置
JP3834787B2 (ja) * 2001-11-22 2006-10-18 インターナショナル・ビジネス・マシーンズ・コーポレーション 不揮発性ラッチ回路
US6687154B2 (en) 2002-02-25 2004-02-03 Aplus Flash Technology, Inc. Highly-integrated flash memory and mask ROM array architecture
WO2003085741A1 (fr) 2002-04-10 2003-10-16 Matsushita Electric Industrial Co., Ltd. Bascule bistable non volatile
JP3875139B2 (ja) 2002-04-24 2007-01-31 Ｎｅｃエレクトロニクス株式会社 不揮発性半導体記憶装置、そのデータ書き込み制御方法およびプログラム
KR100479810B1 (ko) 2002-12-30 2005-03-31 주식회사 하이닉스반도체 불휘발성 메모리 장치
WO2004090984A1 (fr) 2003-04-03 2004-10-21 Kabushiki Kaisha Toshiba Dispositif de memoire a changement de phase
JP3845734B2 (ja) * 2004-11-16 2006-11-15 国立大学法人金沢大学 不揮発性メモリ
DE102005001667B4 (de) * 2005-01-13 2011-04-21 Qimonda Ag Nichtflüchtige Speicherzelle zum Speichern eines Datums in einer integrierten Schaltung
US7764081B1 (en) 2005-08-05 2010-07-27 Xilinx, Inc. Programmable logic device (PLD) with memory refresh based on single event upset (SEU) occurrence to maintain soft error immunity
US7599210B2 (en) 2005-08-19 2009-10-06 Sony Corporation Nonvolatile memory cell, storage device and nonvolatile logic circuit
DE102005049232A1 (de) 2005-10-14 2007-04-26 Infineon Technologies Ag Integrierter Schaltkreis und Verfahren zum Betreiben eines integrierten Schaltkreises
JP5311784B2 (ja) 2006-10-11 2013-10-09 ルネサスエレクトロニクス株式会社 半導体装置
US7692954B2 (en) 2007-03-12 2010-04-06 International Business Machines Corporation Apparatus and method for integrating nonvolatile memory capability within SRAM devices
WO2009031231A1 (fr) * 2007-09-07 2009-03-12 Renesas Technology Corp. Dispositif à semi-conducteur
US7791941B2 (en) 2007-10-26 2010-09-07 Micron Technology, Inc. Non-volatile SRAM cell
JP5201487B2 (ja) * 2007-12-06 2013-06-05 日本電気株式会社 不揮発性ラッチ回路
US20090190409A1 (en) 2008-01-28 2009-07-30 Rok Dittrich Integrated Circuit, Cell Arrangement, Method for Operating an Integrated Circuit and for Operating a Cell Arrangement, Memory Module
US7760538B1 (en) * 2008-03-04 2010-07-20 Xilinx, Inc. Non-volatile SRAM cell
US7796417B1 (en) * 2008-04-14 2010-09-14 Altera Corporation Memory circuits having programmable non-volatile resistors
US20090268513A1 (en) 2008-04-29 2009-10-29 Luca De Ambroggi Memory device with different types of phase change memory
US7961502B2 (en) 2008-12-04 2011-06-14 Qualcomm Incorporated Non-volatile state retention latch
US8194438B2 (en) 2009-02-12 2012-06-05 Seagate Technology Llc nvSRAM having variable magnetic resistors
US8605490B2 (en) 2009-10-12 2013-12-10 Micron Technology, Inc. Non-volatile SRAM cell that incorporates phase-change memory into a CMOS process
JP5359798B2 (ja) * 2009-11-10 2013-12-04 ソニー株式会社 メモリデバイスおよびその読み出し方法
KR20110057601A (ko) 2009-11-24 2011-06-01 삼성전자주식회사 비휘발성 논리 회로, 상기 비휘발성 논리 회로를 포함하는 집적 회로 및 상기 집적 회로의 동작 방법
WO2011066650A1 (fr) * 2009-12-01 2011-06-09 Queen's University At Kingston Procédé et système pour architecture informatique reconfigurable au moment de l'exécution
FR2966636B1 (fr) 2010-10-26 2012-12-14 Centre Nat Rech Scient Element magnetique inscriptible
FR2970589B1 (fr) 2011-01-19 2013-02-15 Centre Nat Rech Scient Cellule mémoire volatile/non volatile
FR2976712B1 (fr) * 2011-06-15 2014-01-31 Centre Nat Rech Scient Element de memoire non-volatile
TWI429062B (zh) 2011-06-15 2014-03-01 Ind Tech Res Inst 非揮發性靜態隨機存取式記憶胞以及記憶體電路
US8773896B2 (en) 2012-05-18 2014-07-08 Alexander Mikhailovich Shukh Nonvolatile latch circuit

Also Published As

Publication number Publication date
FR2970593A1 (fr) 2012-07-20
WO2012098197A1 (fr) 2012-07-26
EP2666165B1 (fr) 2019-08-28
US20140043062A1 (en) 2014-02-13
US9224463B2 (en) 2015-12-29
EP2666165A1 (fr) 2013-11-27

Similar Documents

Publication Publication Date Title
FR2970593B1 (fr) Cellule mémoire volatile/non volatile compacte
FR2976712B1 (fr) Element de memoire non-volatile
EP2833364A3 (fr) Cellule mémoire magnetique non volatile à trois electrodes et matrice associée
TW200721097A (en) Semiconductor device, display device and electronic device equipped with the semiconductor device
WO2008126166A1 (fr) Dispositif de stockage à semi-conducteur non volatile et procédé de lecture associé
TW200733358A (en) Memory cell comprising switchable semiconductor memory element with trimmable resistance
WO2015110924A3 (fr) Communication filaire dans un dispositif de vapotage
TW200636726A (en) Non-volatile semiconductor memory device
WO2009072213A1 (fr) Dispositif de mémoire à changement de résistance, dispositif de mémoire non volatile, et procédé de fabrication associé
TW200703619A (en) Semiconductor integrated device
EP1560221A3 (fr) Dispositif de mémoire à semiconducteur
WO2007100626A3 (fr) Cellules mémoires attaquées par courant présentant un courant amélioré et une symétrie de courant améliorée
TW200711102A (en) Memory cell comprising a thin film three-terminal switching device having a metal source and/or drain region
ITTO20020158A0 (it) Pompa di carica per tensioni negative.
EP1657753A3 (fr) Dispositif de mémoire non volatile avec une résistance et une diode
WO2009022640A1 (fr) Dispositif de commande
EP2299450A8 (fr) Circuit amplificateur de sens pour mémoires non volatiles qui fonctionne sur de basses tensions d'alimentation
TW200943303A (en) Scalable electrically eraseable and programmable memory
DE602004012940D1 (de) Brennstoffzellenstapel mit flüssiger Brennstoffzufuhr
EP2093645A3 (fr) Régulateur de tension à faible chute
EP2224477A4 (fr) Élément de mémoire magnétique, procédé pour piloter l'élément de mémoire magnétique, et dispositif de stockage non volatil
EP3017951A3 (fr) Cellule de tir
EP1712973A3 (fr) Circuit de génération d'un courant de référence
IT1391865B1 (it) Circuito a specchio di corrente, in particolare per un dispositivo di memoria non-volatile
TW200737497A (en) Electric element, memory device, and semiconductor IC circuit

Legal Events

Date Code Title Description
PLFP Fee payment

Year of fee payment: 6

PLFP Fee payment

Year of fee payment: 7

PLFP Fee payment

Year of fee payment: 8

PLFP Fee payment

Year of fee payment: 10

PLFP Fee payment

Year of fee payment: 11

PLFP Fee payment

Year of fee payment: 12

PLFP Fee payment

Year of fee payment: 14