MX2010006978A - Dispositivo de mram con linea fuente compartida. - Google Patents

Dispositivo de mram con linea fuente compartida.

Info

Publication number
MX2010006978A
MX2010006978A MX2010006978A MX2010006978A MX2010006978A MX 2010006978 A MX2010006978 A MX 2010006978A MX 2010006978 A MX2010006978 A MX 2010006978A MX 2010006978 A MX2010006978 A MX 2010006978A MX 2010006978 A MX2010006978 A MX 2010006978A
Authority
MX
Mexico
Prior art keywords
memory cell
memory
source line
mram device
cell
Prior art date
Application number
MX2010006978A
Other languages
English (en)
Inventor
Cheng Zhong
Sei Seung Yoon
Dongkyu Park
Mohamed H Abu-Rahma
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of MX2010006978A publication Critical patent/MX2010006978A/es

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)

Abstract

En una modalidad particular, un dispositivo de memoria incluye una primera celda de memoria y una segunda celda de memoria. El dispositivo de memoria también incluye una primera línea de bits asociada con la primera celda de memoria y una segunda línea de bits asociada con la segunda celda de memoria. El dispositivo de memoria también incluye una línea fuente acoplada con la primera celda de memoria y acoplada con la segunda celda de memoria. La celda de memoria puede estar formada por celdas de memoria magnetoresistivas de transferencia de torsión de giro que tienen transistores de efecto de campo de selección. La celda de memoria también puede formarse como pares de celdas complementarias. Se proporcionan celdas con media selección con o a través de éstas para impedir la interrupción de lectura.
MX2010006978A 2007-12-19 2008-12-19 Dispositivo de mram con linea fuente compartida. MX2010006978A (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/959,515 US7995378B2 (en) 2007-12-19 2007-12-19 MRAM device with shared source line
PCT/US2008/087741 WO2009079660A1 (en) 2007-12-19 2008-12-19 Mram device with shared source line

Publications (1)

Publication Number Publication Date
MX2010006978A true MX2010006978A (es) 2010-09-10

Family

ID=40343524

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2010006978A MX2010006978A (es) 2007-12-19 2008-12-19 Dispositivo de mram con linea fuente compartida.

Country Status (9)

Country Link
US (1) US7995378B2 (es)
EP (1) EP2245630B1 (es)
JP (1) JP5237388B2 (es)
KR (1) KR101166982B1 (es)
CN (1) CN101925961B (es)
CA (1) CA2710332C (es)
MX (1) MX2010006978A (es)
RU (1) RU2455711C2 (es)
WO (1) WO2009079660A1 (es)

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US8587982B2 (en) 2011-02-25 2013-11-19 Qualcomm Incorporated Non-volatile memory array configurable for high performance and high density
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KR101841445B1 (ko) 2011-12-06 2018-03-23 삼성전자주식회사 저항성 메모리 소자 및 그 제조 방법
KR101886382B1 (ko) * 2011-12-14 2018-08-09 삼성전자주식회사 정보 저장 소자 및 그 제조 방법
RU2515461C2 (ru) * 2012-07-31 2014-05-10 Федеральное государственное унитарное предприятие федеральный научно-производственный центр "Научно-исследовательский институт измерительных систем им. Ю.Е. Седакова" ИНТЕГРИРОВАННАЯ В СБИС ТЕХНОЛОГИИ КМОП/КНИ С n+ - И p+ - ПОЛИКРЕМНИЕВЫМИ ЗАТВОРАМИ МАТРИЦА ПАМЯТИ MRAM С МАГНИТОРЕЗИСТИВНЫМИ УСТРОЙСТВАМИ С ПЕРЕДАЧЕЙ СПИНОВОГО ВРАЩЕНИЯ
KR101952272B1 (ko) 2012-11-06 2019-02-26 삼성전자주식회사 반도체 기억 소자
JP5492324B1 (ja) 2013-03-15 2014-05-14 株式会社東芝 プロセッサシステム
US9177626B2 (en) * 2013-08-27 2015-11-03 Naoki Shimizu Semiconductor memory device
KR102235211B1 (ko) * 2014-03-25 2021-04-05 삼성전자주식회사 비휘발성 메모리 장치 및 그것을 포함하는 저장 장치, 그것의 쓰기 방법 및 읽기 방법
US9431083B2 (en) 2014-03-25 2016-08-30 Samsung Electronics Co., Ltd. Nonvolatile memory device and storage device having the same
KR102124209B1 (ko) 2014-04-14 2020-06-18 삼성전자주식회사 반도체 메모리 장치
KR102235043B1 (ko) 2014-06-09 2021-04-05 삼성전자주식회사 반도체 메모리 장치
CN104778966B (zh) * 2015-04-20 2017-05-10 北京航空航天大学 一种基于自旋霍尔效应磁隧道结的非易失性逻辑门电路
US9548096B1 (en) 2015-08-26 2017-01-17 Qualcomm Incorporated Reverse complement magnetic tunnel junction (MTJ) bit cells employing shared source lines, and related methods
US9496314B1 (en) 2015-09-14 2016-11-15 Qualcomm Incorporated Shared source line magnetic tunnel junction (MTJ) bit cells employing uniform MTJ connection patterns for reduced area
US20180374893A1 (en) * 2017-06-22 2018-12-27 Globalfoundries Singapore Pte. Ltd. Differential sensing cell design for stt mram
US10446213B1 (en) * 2018-05-16 2019-10-15 Everspin Technologies, Inc. Bitline control in differential magnetic memory
US10727275B2 (en) 2018-05-18 2020-07-28 Taiwan Semiconductor Manufacturing Co., Ltd. Memory layout for reduced line loading
US11151296B2 (en) 2018-05-18 2021-10-19 Taiwan Semiconductor Manufacturing Company, Ltd. Memory cell array circuit
US10726896B1 (en) * 2019-01-30 2020-07-28 Globalfoundries Inc. Resistive nonvolatile memory structure employing a statistical sensing scheme and method
US11244983B2 (en) * 2019-06-25 2022-02-08 Taiwan Semiconductor Manufacturing Co., Ltd. MRAM memory cell layout for minimizing bitcell area
CN113497082A (zh) * 2020-03-18 2021-10-12 上海磁宇信息科技有限公司 磁性随机存储器架构
US11856801B2 (en) * 2020-06-16 2023-12-26 Taiwan Semiconductor Manufacturing Company Limited Threshold voltage-modulated memory device using variable-capacitance and methods of forming the same
KR20220116757A (ko) * 2021-02-15 2022-08-23 삼성전자주식회사 Mtj 소자를 기반으로 한 프로세싱 장치 및 그 장치를 포함하는 전자 시스템
US11545202B2 (en) * 2021-04-30 2023-01-03 Taiwan Semiconductor Manufacturing Company, Ltd. Circuit design and layout with high embedded memory density
KR102467680B1 (ko) * 2021-09-10 2022-11-16 인하대학교 산학협력단 저면적 sot-mram 회로 구조
CN116234322B (zh) * 2022-08-18 2024-02-23 北京超弦存储器研究院 存储器及其制造方法、读写控制方法

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Also Published As

Publication number Publication date
US20090161413A1 (en) 2009-06-25
EP2245630B1 (en) 2013-05-01
RU2010129834A (ru) 2012-01-27
US7995378B2 (en) 2011-08-09
EP2245630A1 (en) 2010-11-03
CA2710332A1 (en) 2009-06-25
CA2710332C (en) 2013-12-24
RU2455711C2 (ru) 2012-07-10
JP5237388B2 (ja) 2013-07-17
CN101925961B (zh) 2014-02-12
KR20100097743A (ko) 2010-09-03
CN101925961A (zh) 2010-12-22
KR101166982B1 (ko) 2012-07-24
WO2009079660A1 (en) 2009-06-25
JP2011508356A (ja) 2011-03-10

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