MX2009009488A - Control de potencia de transistor de linea de palabra para la lectura y escritura en una memoria magnetoresistiva de acceso aleatorio de torque de transferencia de giro. - Google Patents

Control de potencia de transistor de linea de palabra para la lectura y escritura en una memoria magnetoresistiva de acceso aleatorio de torque de transferencia de giro.

Info

Publication number
MX2009009488A
MX2009009488A MX2009009488A MX2009009488A MX2009009488A MX 2009009488 A MX2009009488 A MX 2009009488A MX 2009009488 A MX2009009488 A MX 2009009488A MX 2009009488 A MX2009009488 A MX 2009009488A MX 2009009488 A MX2009009488 A MX 2009009488A
Authority
MX
Mexico
Prior art keywords
word line
line transistor
random access
access memory
write
Prior art date
Application number
MX2009009488A
Other languages
English (en)
Inventor
Mehdi Hamidi Sani
Sei Seung Yoon
Seung H Kang
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of MX2009009488A publication Critical patent/MX2009009488A/es

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G11C11/1657—Word-line or row circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Static Random-Access Memory (AREA)

Abstract

Se describen sistemas, circuitos y métodos para controlar el voltaje de línea de palabra en un transistor de línea de palabra en una memoria magnetoresistiva de acceso aleatorio de torque de transferencia de giro (Spin Transfer Torque Magnetoresistive Random Access Memory - STT-MRAM). Puede suministrarse un primer voltaje al transistor de línea de palabra para operaciones de escritura. Un segundo voltaje, que es menor que el primer voltaje, puede suministrarse al transistor de línea de palabra durante las operaciones de lectura.
MX2009009488A 2007-03-06 2008-03-06 Control de potencia de transistor de linea de palabra para la lectura y escritura en una memoria magnetoresistiva de acceso aleatorio de torque de transferencia de giro. MX2009009488A (es)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US89321707P 2007-03-06 2007-03-06
US11/770,839 US7742329B2 (en) 2007-03-06 2007-06-29 Word line transistor strength control for read and write in spin transfer torque magnetoresistive random access memory
PCT/US2008/056086 WO2008109768A1 (en) 2007-03-06 2008-03-06 Word line transistor strength control for read and write in spin transfer torque magnetoresistive random access memory

Publications (1)

Publication Number Publication Date
MX2009009488A true MX2009009488A (es) 2009-09-16

Family

ID=39523385

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2009009488A MX2009009488A (es) 2007-03-06 2008-03-06 Control de potencia de transistor de linea de palabra para la lectura y escritura en una memoria magnetoresistiva de acceso aleatorio de torque de transferencia de giro.

Country Status (12)

Country Link
US (1) US7742329B2 (es)
EP (1) EP2126922B1 (es)
JP (3) JP2010520576A (es)
KR (1) KR101093889B1 (es)
CN (1) CN101641746B (es)
AT (1) ATE534996T1 (es)
BR (1) BRPI0808640B1 (es)
CA (1) CA2677920C (es)
ES (1) ES2375015T3 (es)
MX (1) MX2009009488A (es)
RU (1) RU2419894C1 (es)
WO (1) WO2008109768A1 (es)

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Also Published As

Publication number Publication date
CN101641746A (zh) 2010-02-03
JP5951433B2 (ja) 2016-07-13
ATE534996T1 (de) 2011-12-15
ES2375015T3 (es) 2012-02-24
CA2677920C (en) 2013-10-01
US20080219043A1 (en) 2008-09-11
US7742329B2 (en) 2010-06-22
BRPI0808640A8 (pt) 2019-01-15
JP2010520576A (ja) 2010-06-10
JP2013048008A (ja) 2013-03-07
KR20090119924A (ko) 2009-11-20
RU2419894C1 (ru) 2011-05-27
EP2126922A1 (en) 2009-12-02
BRPI0808640A2 (pt) 2014-08-05
WO2008109768A1 (en) 2008-09-12
JP2015043251A (ja) 2015-03-05
CN101641746B (zh) 2012-09-19
KR101093889B1 (ko) 2011-12-13
CA2677920A1 (en) 2008-09-12
BRPI0808640B1 (pt) 2020-01-07
EP2126922B1 (en) 2011-11-23

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