DE60212479D1 - Magnetoresistives Element und Benützung für MRAM - Google Patents

Magnetoresistives Element und Benützung für MRAM

Info

Publication number
DE60212479D1
DE60212479D1 DE60212479T DE60212479T DE60212479D1 DE 60212479 D1 DE60212479 D1 DE 60212479D1 DE 60212479 T DE60212479 T DE 60212479T DE 60212479 T DE60212479 T DE 60212479T DE 60212479 D1 DE60212479 D1 DE 60212479D1
Authority
DE
Germany
Prior art keywords
mram
magnetoresistive element
magnetoresistive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60212479T
Other languages
English (en)
Other versions
DE60212479T2 (de
Inventor
Naoki Nishimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE60212479D1 publication Critical patent/DE60212479D1/de
Application granted granted Critical
Publication of DE60212479T2 publication Critical patent/DE60212479T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • H01F10/3281—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn only by use of asymmetry of the magnetic film pair itself, i.e. so-called pseudospin valve [PSV] structure, e.g. NiFe/Cu/Co
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3286—Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Semiconductor Memories (AREA)
  • Measuring Magnetic Variables (AREA)
  • Magnetic Heads (AREA)
  • Thin Magnetic Films (AREA)
DE60212479T 2001-03-19 2002-03-18 Magnetoresistives Element und Benützung für MRAM Expired - Lifetime DE60212479T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001078471A JP3667244B2 (ja) 2001-03-19 2001-03-19 磁気抵抗素子、それを用いたメモリ素子、磁気ランダムアクセスメモリ及び磁気ランダムアクセスメモリの記録再生方法
JP2001078471 2001-03-19

Publications (2)

Publication Number Publication Date
DE60212479D1 true DE60212479D1 (de) 2006-08-03
DE60212479T2 DE60212479T2 (de) 2006-12-21

Family

ID=18935082

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60212479T Expired - Lifetime DE60212479T2 (de) 2001-03-19 2002-03-18 Magnetoresistives Element und Benützung für MRAM

Country Status (7)

Country Link
US (1) US6853580B2 (de)
EP (1) EP1244118B1 (de)
JP (1) JP3667244B2 (de)
KR (1) KR100515623B1 (de)
CN (1) CN1221043C (de)
DE (1) DE60212479T2 (de)
TW (1) TW559807B (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7035138B2 (en) * 2000-09-27 2006-04-25 Canon Kabushiki Kaisha Magnetic random access memory having perpendicular magnetic films switched by magnetic fields from a plurality of directions
EP1288958A3 (de) * 2001-08-30 2003-07-09 Canon Kabushiki Kaisha Magnetoresistives Element und dieses verwendender magnetoresistiver Speicher
JP2003086775A (ja) 2001-09-07 2003-03-20 Canon Inc 磁気メモリ装置およびその製造方法
US6762952B2 (en) * 2002-05-01 2004-07-13 Hewlett-Packard Development Company, L.P. Minimizing errors in a magnetoresistive solid-state storage device
DE10301092B4 (de) * 2003-01-14 2006-06-29 Infineon Technologies Ag MRAM-Speicherzelle
JP4419408B2 (ja) * 2003-03-14 2010-02-24 Ｔｄｋ株式会社 磁気抵抗効果素子および磁気メモリデバイス
JP2005026576A (ja) * 2003-07-04 2005-01-27 Sony Corp 記憶装置
JP4253225B2 (ja) * 2003-07-09 2009-04-08 株式会社東芝 磁気抵抗効果素子および磁気メモリ
US20050105328A1 (en) * 2003-11-17 2005-05-19 Ho Chiahua Perpendicular MRAM with high magnetic transition and low programming current
CN100372141C (zh) * 2003-12-18 2008-02-27 安泰科技股份有限公司 巨磁阻抗材料的复合式焦耳处理方法
US7075807B2 (en) * 2004-08-18 2006-07-11 Infineon Technologies Ag Magnetic memory with static magnetic offset field
CN100383891C (zh) * 2004-09-10 2008-04-23 中国科学院物理研究所 一种碳纳米管磁随机存取存储器
JP4575181B2 (ja) * 2005-01-28 2010-11-04 株式会社東芝 スピン注入磁気ランダムアクセスメモリ
US20070115715A1 (en) * 2005-11-23 2007-05-24 Ryu Ho J Magnetic access memory device using perpendicular magnetization and fabrication method thereof
FR2907587B1 (fr) * 2006-10-23 2008-12-26 Commissariat Energie Atomique Dispositif magnetique a animation perpendiculaire et a couche intercalaire compensatrice d'interactions.
JP2010034153A (ja) * 2008-07-25 2010-02-12 Toshiba Corp 磁気ランダムアクセスメモリおよびその書き込み方法
JP2012069671A (ja) 2010-09-22 2012-04-05 Toshiba Corp 半導体記憶装置およびその製造方法
JP5796349B2 (ja) * 2011-05-23 2015-10-21 ソニー株式会社 記憶素子の製造方法
CN102540113B (zh) * 2011-11-11 2014-07-02 江苏多维科技有限公司 磁场传感器
DE102012005134B4 (de) 2012-03-05 2015-10-08 Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh Spin-Ventil und Verwendung einer Vielzahl von Spin-Ventilen
JP5542856B2 (ja) * 2012-03-21 2014-07-09 株式会社東芝 磁気抵抗効果素子及び磁気メモリ
KR101266791B1 (ko) * 2012-09-21 2013-05-27 고려대학교 산학협력단 면내 전류와 전기장을 이용한 자기메모리 소자
CN104698408A (zh) * 2013-12-10 2015-06-10 日本电产三协株式会社 磁传感器装置及磁性编码器装置
US9972775B2 (en) 2015-03-12 2018-05-15 Globalfoundries Singapore Pte. Ltd. Integrated magnetic random access memory with logic device having low-k interconnects
US10199572B2 (en) * 2015-05-27 2019-02-05 Globalfoundries Singapore Pte. Ltd. Integrated magnetic random access memory with logic device
US10205088B2 (en) * 2016-10-27 2019-02-12 Tdk Corporation Magnetic memory
US10446607B2 (en) 2016-12-28 2019-10-15 GLOBALFOUNDARIES Singapore Pte. Ltd. Integrated two-terminal device with logic device for embedded application
CN107611257B (zh) * 2017-07-21 2019-11-12 华侨大学 一种垂直负矫顽力人工磁耦合结构材料及其制备方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW411471B (en) * 1997-09-17 2000-11-11 Siemens Ag Memory-cell device
JP3679593B2 (ja) 1998-01-28 2005-08-03 キヤノン株式会社 磁性薄膜素子および磁性薄膜メモリ素子およびその記録再生方法
EP0959475A3 (de) 1998-05-18 2000-11-08 Canon Kabushiki Kaisha Magnetischer Dünnfilmspeicher sowie Schreibe- und Leseverfahren und Anordnung unter Verwendung solchen Speichers
US6055179A (en) 1998-05-19 2000-04-25 Canon Kk Memory device utilizing giant magnetoresistance effect
US6166948A (en) 1999-09-03 2000-12-26 International Business Machines Corporation Magnetic memory array with magnetic tunnel junction memory cells having flux-closed free layers
EP1115164B1 (de) 2000-01-07 2005-05-25 Sharp Kabushiki Kaisha Magnetoresistive Anordnung und diese verwendendes magnetisches Speicherelement

Also Published As

Publication number Publication date
KR20030009083A (ko) 2003-01-29
KR100515623B1 (ko) 2005-09-22
JP3667244B2 (ja) 2005-07-06
CN1221043C (zh) 2005-09-28
US6853580B2 (en) 2005-02-08
EP1244118A3 (de) 2003-07-16
CN1392618A (zh) 2003-01-22
JP2002280639A (ja) 2002-09-27
DE60212479T2 (de) 2006-12-21
TW559807B (en) 2003-11-01
EP1244118B1 (de) 2006-06-21
US20030002330A1 (en) 2003-01-02
EP1244118A2 (de) 2002-09-25

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