DE60110944D1 - Magnetoresistive Anordnung und diese verwendendes magnetisches Speicherelement - Google Patents

Magnetoresistive Anordnung und diese verwendendes magnetisches Speicherelement

Info

Publication number
DE60110944D1
DE60110944D1 DE60110944T DE60110944T DE60110944D1 DE 60110944 D1 DE60110944 D1 DE 60110944D1 DE 60110944 T DE60110944 T DE 60110944T DE 60110944 T DE60110944 T DE 60110944T DE 60110944 D1 DE60110944 D1 DE 60110944D1
Authority
DE
Germany
Prior art keywords
same
storage element
magnetic storage
magnetoresistive device
magnetoresistive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60110944T
Other languages
English (en)
Other versions
DE60110944T2 (de
Inventor
Hidekazu Hayashi
Masashi Michijima
Ryoji Minakata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2000001189A external-priority patent/JP3574773B2/ja
Priority claimed from JP2000037527A external-priority patent/JP3544638B2/ja
Priority claimed from JP2000085563A external-priority patent/JP3758933B2/ja
Priority claimed from JP2000090495A external-priority patent/JP3653442B2/ja
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of DE60110944D1 publication Critical patent/DE60110944D1/de
Application granted granted Critical
Publication of DE60110944T2 publication Critical patent/DE60110944T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • H01F10/3281—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn only by use of asymmetry of the magnetic film pair itself, i.e. so-called pseudospin valve [PSV] structure, e.g. NiFe/Cu/Co
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5607—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using magnetic storage elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/3204—Exchange coupling of amorphous multilayers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3286—Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
DE60110944T 2000-01-07 2001-01-03 Magnetoresistive Anordnung und diese verwendendes magnetisches Speicherelement Expired - Lifetime DE60110944T2 (de)

Applications Claiming Priority (10)

Application Number Priority Date Filing Date Title
JP2000001189 2000-01-07
JP2000001189A JP3574773B2 (ja) 2000-01-07 2000-01-07 磁気抵抗効果素子およびそれを用いた磁気メモリ
JP2000024609 2000-02-02
JP2000024609 2000-02-02
JP2000037527 2000-02-16
JP2000037527A JP3544638B2 (ja) 2000-02-02 2000-02-16 磁気抵抗効果素子およびそれを用いた磁気メモリ
JP2000085563 2000-03-27
JP2000085563A JP3758933B2 (ja) 2000-03-27 2000-03-27 磁気メモリおよびその記録方法
JP2000090495A JP3653442B2 (ja) 2000-03-29 2000-03-29 磁気メモリおよびその記録方法
JP2000090495 2000-03-29

Publications (2)

Publication Number Publication Date
DE60110944D1 true DE60110944D1 (de) 2005-06-30
DE60110944T2 DE60110944T2 (de) 2006-04-27

Family

ID=27531370

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60110944T Expired - Lifetime DE60110944T2 (de) 2000-01-07 2001-01-03 Magnetoresistive Anordnung und diese verwendendes magnetisches Speicherelement

Country Status (4)

Country Link
US (1) US6628542B2 (de)
EP (1) EP1115164B1 (de)
CN (1) CN1254870C (de)
DE (1) DE60110944T2 (de)

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3679593B2 (ja) * 1998-01-28 2005-08-03 キヤノン株式会社 磁性薄膜素子および磁性薄膜メモリ素子およびその記録再生方法
US7035138B2 (en) 2000-09-27 2006-04-25 Canon Kabushiki Kaisha Magnetic random access memory having perpendicular magnetic films switched by magnetic fields from a plurality of directions
US6724674B2 (en) * 2000-11-08 2004-04-20 International Business Machines Corporation Memory storage device with heating element
TW544677B (en) * 2000-12-26 2003-08-01 Matsushita Electric Ind Co Ltd Magneto-resistance memory device
JP3667244B2 (ja) * 2001-03-19 2005-07-06 キヤノン株式会社 磁気抵抗素子、それを用いたメモリ素子、磁気ランダムアクセスメモリ及び磁気ランダムアクセスメモリの記録再生方法
US6713830B2 (en) * 2001-03-19 2004-03-30 Canon Kabushiki Kaisha Magnetoresistive element, memory element using the magnetoresistive element, and recording/reproduction method for the memory element
EP1288958A3 (de) * 2001-08-30 2003-07-09 Canon Kabushiki Kaisha Magnetoresistives Element und dieses verwendender magnetoresistiver Speicher
FR2829868A1 (fr) * 2001-09-20 2003-03-21 Centre Nat Rech Scient Memoire magnetique a ecriture par courant polarise en spin, mettant en oeuvre des alliages amorphes ferrimagnetiques et procede pour son ecriture
JP3592282B2 (ja) * 2001-10-01 2004-11-24 キヤノン株式会社 磁気抵抗効果膜、およびそれを用いたメモリ
US6593608B1 (en) * 2002-03-15 2003-07-15 Hewlett-Packard Development Company, L.P. Magneto resistive storage device having double tunnel junction
JP3769241B2 (ja) * 2002-03-29 2006-04-19 株式会社東芝 磁気抵抗効果素子及び磁気メモリ
US7207946B2 (en) * 2002-05-09 2007-04-24 Spiration, Inc. Automated provision of information related to air evacuation from a chest cavity
US6657890B1 (en) * 2002-06-21 2003-12-02 Hewlett-Packard Development Company, L.P. Magnetic memory device
JP2006134363A (ja) * 2002-07-29 2006-05-25 Nec Corp 磁気ランダムアクセスメモリ
US7140081B2 (en) * 2002-10-19 2006-11-28 General Motors Corporation Releasable fastener system
US7032282B2 (en) 2002-10-19 2006-04-25 General Motors Corporation Releasable fastener system
US6944920B2 (en) * 2002-10-19 2005-09-20 General Motors Corporation Electrostatically releasable fastening system and method of use
US6973701B2 (en) * 2002-10-19 2005-12-13 General Motors Corporation Releasable fastening system based on ionic polymer metal composites and method of use
JP4015983B2 (ja) * 2002-10-19 2007-11-28 ゼネラル・モーターズ・コーポレーション 解除可能な付属品用の磁気粘性ナノ複合エラストマー
US6983517B2 (en) 2002-10-19 2006-01-10 General Motors Corporation Releasable fastener system
US7013538B2 (en) 2002-10-19 2006-03-21 General Motors Corporation Electroactive polymer releasable fastening system and method of use
US7308738B2 (en) * 2002-10-19 2007-12-18 General Motors Corporation Releasable fastener systems and processes
US7146690B2 (en) * 2002-10-19 2006-12-12 General Motors Corporation Releasable fastener system
US7013536B2 (en) 2002-10-19 2006-03-21 General Motors Corporation Releasable fastener systems and processes
CN1717743B (zh) * 2002-11-28 2014-05-14 Nxp股份有限公司 用于在磁致电阻存储器件的写操作期间改善磁场产生的方法和设备
DE10301092B4 (de) * 2003-01-14 2006-06-29 Infineon Technologies Ag MRAM-Speicherzelle
FR2851668A1 (fr) * 2003-02-24 2004-08-27 St Microelectronics Sa Procede et dispositif de selection de mode de fonctionnement d'un circuit integre
US7173847B2 (en) * 2003-05-20 2007-02-06 Magsil Corporation Magnetic storage cell
US7219113B2 (en) * 2003-09-26 2007-05-15 International Business Machines Corporation Pseudo-random binary sequence checker with automatic synchronization
US6970379B2 (en) * 2003-10-14 2005-11-29 International Business Machines Corporation System and method for storing data in an unpatterned, continuous magnetic layer
JP4377751B2 (ja) * 2004-06-10 2009-12-02 シャープ株式会社 クロスポイント構造の半導体記憶装置及びその製造方法
US7313013B2 (en) 2004-11-18 2007-12-25 International Business Machines Corporation Spin-current switchable magnetic memory element and method of fabricating the memory element
JP2006196687A (ja) * 2005-01-13 2006-07-27 Tdk Corp 磁気メモリ
US20060261109A1 (en) * 2005-05-18 2006-11-23 Browne Alan L Cargo container including an active material based releasable fastener system
KR100695163B1 (ko) * 2005-10-06 2007-03-14 삼성전자주식회사 자기저항 효과를 이용한 상변화 메모리 소자와 그 동작 및제조 방법
US7929258B2 (en) * 2008-01-22 2011-04-19 Seagate Technology Llc Magnetic sensor including a free layer having perpendicular to the plane anisotropy
US7902616B2 (en) * 2008-06-30 2011-03-08 Qimonda Ag Integrated circuit having a magnetic tunnel junction device and method
US7863700B2 (en) * 2008-06-30 2011-01-04 Qimonda Ag Magnetoresistive sensor with tunnel barrier and method
US8790798B2 (en) 2011-04-18 2014-07-29 Alexander Mikhailovich Shukh Magnetoresistive element and method of manufacturing the same
US8758909B2 (en) 2011-04-20 2014-06-24 Alexander Mikhailovich Shukh Scalable magnetoresistive element
US8541855B2 (en) * 2011-05-10 2013-09-24 Magic Technologies, Inc. Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications
US9368176B2 (en) 2012-04-20 2016-06-14 Alexander Mikhailovich Shukh Scalable magnetoresistive element
US9524765B2 (en) * 2014-08-15 2016-12-20 Qualcomm Incorporated Differential magnetic tunnel junction pair including a sense layer with a high coercivity portion
US10128310B2 (en) * 2016-03-14 2018-11-13 Toshiba Memory Corporation Magnetoresistive memory device and manufacturing method of the same

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5347485A (en) * 1992-03-03 1994-09-13 Mitsubishi Denki Kabushiki Kaisha Magnetic thin film memory
JPH09106514A (ja) 1995-10-06 1997-04-22 Fujitsu Ltd 強磁性トンネル素子及びその製造方法
US5909345A (en) * 1996-02-22 1999-06-01 Matsushita Electric Industrial Co., Ltd. Magnetoresistive device and magnetoresistive head
JP3351694B2 (ja) 1996-10-28 2002-12-03 日本ビクター株式会社 磁性メモリ
JP3679593B2 (ja) * 1998-01-28 2005-08-03 キヤノン株式会社 磁性薄膜素子および磁性薄膜メモリ素子およびその記録再生方法
EP0959475A3 (de) * 1998-05-18 2000-11-08 Canon Kabushiki Kaisha Magnetischer Dünnfilmspeicher sowie Schreibe- und Leseverfahren und Anordnung unter Verwendung solchen Speichers

Also Published As

Publication number Publication date
US6628542B2 (en) 2003-09-30
DE60110944T2 (de) 2006-04-27
EP1115164B1 (de) 2005-05-25
US20010040819A1 (en) 2001-11-15
EP1115164A3 (de) 2002-06-12
EP1115164A2 (de) 2001-07-11
CN1310481A (zh) 2001-08-29
CN1254870C (zh) 2006-05-03

Similar Documents

Publication Publication Date Title
DE60110944D1 (de) Magnetoresistive Anordnung und diese verwendendes magnetisches Speicherelement
DE60037784D1 (de) Magnetoresistives Element und magnetische Speicheranordnung
DE60009431D1 (de) Magnetische Speicheranordnung
DE60212479D1 (de) Magnetoresistives Element und Benützung für MRAM
ATE306318T1 (de) Entschwefelung und hierfür geeignetes sorbens
DE60140592D1 (de) Navigationsgerät und Speichermedium dafür
DE60124035D1 (de) Aufzeichnungsgerät und Aufzeichnungsverfahren
DE60309190D1 (de) Magnetelement mit spintransfer und mram-bauelement mit dem magnetelement
DE60042805D1 (de) Spielvorrichtung und entsprechendes Aufzeichnungsmedium
DE60015612D1 (de) Messvorrichtung mit magnetoresistiven elektroden
DE60026795D1 (de) Gerät magnetischer Resonanz
DE60012708D1 (de) Plattengerät und Plattenmedium
DE60202564D1 (de) Ausrichtungsvorrichtung und Magnetisierungsvorrichtung
SG98004A1 (en) Magneto-resistance effect head and magnetic storage device employing the head
DE60109616D1 (de) Immunoassay und immunoassayvorrichtung
DE50211216D1 (de) Magnetische speichereinheit und magnetisches speicherarray
DE69826737D1 (de) Magnetisches Speichergerät mit magnetoresistivem Element
DE60207664D1 (de) Magnetaufzeichnungsmedium und Magnetspeichergerät
DE60100915D1 (de) Magnetfeldsensor und Positionsdetektor
DE60105247D1 (de) Drehtischvorrichtung
DE60042988D1 (de) Magnetaufzeichnungsmedium und Magnetspeichergerät
DE60124325D1 (de) Aufzeichnungsgerät und Aufzeichungsverfahren
DE60141997D1 (de) Verbinder mit Schieber und Verbinder
DE60015899D1 (de) Aufnahmevorrichtung und Aufnahmemedium
DE60142596D1 (de) uerungsverfahren und Aufzeichnungsmedium

Legal Events

Date Code Title Description
8364 No opposition during term of opposition