DE60110944D1 - Magnetoresistive Anordnung und diese verwendendes magnetisches Speicherelement - Google Patents
Magnetoresistive Anordnung und diese verwendendes magnetisches SpeicherelementInfo
- Publication number
- DE60110944D1 DE60110944D1 DE60110944T DE60110944T DE60110944D1 DE 60110944 D1 DE60110944 D1 DE 60110944D1 DE 60110944 T DE60110944 T DE 60110944T DE 60110944 T DE60110944 T DE 60110944T DE 60110944 D1 DE60110944 D1 DE 60110944D1
- Authority
- DE
- Germany
- Prior art keywords
- same
- storage element
- magnetic storage
- magnetoresistive device
- magnetoresistive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
- H01F10/3281—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn only by use of asymmetry of the magnetic film pair itself, i.e. so-called pseudospin valve [PSV] structure, e.g. NiFe/Cu/Co
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5607—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using magnetic storage elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/3204—Exchange coupling of amorphous multilayers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3286—Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Power Engineering (AREA)
- Nanotechnology (AREA)
- Computer Hardware Design (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Physics & Mathematics (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
- Thin Magnetic Films (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (10)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000001189 | 2000-01-07 | ||
JP2000001189A JP3574773B2 (ja) | 2000-01-07 | 2000-01-07 | 磁気抵抗効果素子およびそれを用いた磁気メモリ |
JP2000024609 | 2000-02-02 | ||
JP2000024609 | 2000-02-02 | ||
JP2000037527A JP3544638B2 (ja) | 2000-02-02 | 2000-02-16 | 磁気抵抗効果素子およびそれを用いた磁気メモリ |
JP2000037527 | 2000-02-16 | ||
JP2000085563 | 2000-03-27 | ||
JP2000085563A JP3758933B2 (ja) | 2000-03-27 | 2000-03-27 | 磁気メモリおよびその記録方法 |
JP2000090495A JP3653442B2 (ja) | 2000-03-29 | 2000-03-29 | 磁気メモリおよびその記録方法 |
JP2000090495 | 2000-03-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60110944D1 true DE60110944D1 (de) | 2005-06-30 |
DE60110944T2 DE60110944T2 (de) | 2006-04-27 |
Family
ID=27531370
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60110944T Expired - Lifetime DE60110944T2 (de) | 2000-01-07 | 2001-01-03 | Magnetoresistive Anordnung und diese verwendendes magnetisches Speicherelement |
Country Status (4)
Country | Link |
---|---|
US (1) | US6628542B2 (de) |
EP (1) | EP1115164B1 (de) |
CN (1) | CN1254870C (de) |
DE (1) | DE60110944T2 (de) |
Families Citing this family (44)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3679593B2 (ja) * | 1998-01-28 | 2005-08-03 | キヤノン株式会社 | 磁性薄膜素子および磁性薄膜メモリ素子およびその記録再生方法 |
US7035138B2 (en) * | 2000-09-27 | 2006-04-25 | Canon Kabushiki Kaisha | Magnetic random access memory having perpendicular magnetic films switched by magnetic fields from a plurality of directions |
US6724674B2 (en) * | 2000-11-08 | 2004-04-20 | International Business Machines Corporation | Memory storage device with heating element |
TW544677B (en) * | 2000-12-26 | 2003-08-01 | Matsushita Electric Ind Co Ltd | Magneto-resistance memory device |
US6713830B2 (en) * | 2001-03-19 | 2004-03-30 | Canon Kabushiki Kaisha | Magnetoresistive element, memory element using the magnetoresistive element, and recording/reproduction method for the memory element |
JP3667244B2 (ja) * | 2001-03-19 | 2005-07-06 | キヤノン株式会社 | 磁気抵抗素子、それを用いたメモリ素子、磁気ランダムアクセスメモリ及び磁気ランダムアクセスメモリの記録再生方法 |
US6721201B2 (en) | 2001-08-30 | 2004-04-13 | Canon Kabushiki Kaisha | Magnetoresistive film and memory using the same |
FR2829868A1 (fr) * | 2001-09-20 | 2003-03-21 | Centre Nat Rech Scient | Memoire magnetique a ecriture par courant polarise en spin, mettant en oeuvre des alliages amorphes ferrimagnetiques et procede pour son ecriture |
JP3592282B2 (ja) * | 2001-10-01 | 2004-11-24 | キヤノン株式会社 | 磁気抵抗効果膜、およびそれを用いたメモリ |
US6593608B1 (en) * | 2002-03-15 | 2003-07-15 | Hewlett-Packard Development Company, L.P. | Magneto resistive storage device having double tunnel junction |
JP3769241B2 (ja) * | 2002-03-29 | 2006-04-19 | 株式会社東芝 | 磁気抵抗効果素子及び磁気メモリ |
US7207946B2 (en) * | 2002-05-09 | 2007-04-24 | Spiration, Inc. | Automated provision of information related to air evacuation from a chest cavity |
US6657890B1 (en) * | 2002-06-21 | 2003-12-02 | Hewlett-Packard Development Company, L.P. | Magnetic memory device |
JP2006134363A (ja) * | 2002-07-29 | 2006-05-25 | Nec Corp | 磁気ランダムアクセスメモリ |
US7140081B2 (en) * | 2002-10-19 | 2006-11-28 | General Motors Corporation | Releasable fastener system |
US6983517B2 (en) | 2002-10-19 | 2006-01-10 | General Motors Corporation | Releasable fastener system |
US7146690B2 (en) * | 2002-10-19 | 2006-12-12 | General Motors Corporation | Releasable fastener system |
US7032282B2 (en) | 2002-10-19 | 2006-04-25 | General Motors Corporation | Releasable fastener system |
US7013536B2 (en) | 2002-10-19 | 2006-03-21 | General Motors Corporation | Releasable fastener systems and processes |
JP4015983B2 (ja) * | 2002-10-19 | 2007-11-28 | ゼネラル・モーターズ・コーポレーション | 解除可能な付属品用の磁気粘性ナノ複合エラストマー |
US7013538B2 (en) | 2002-10-19 | 2006-03-21 | General Motors Corporation | Electroactive polymer releasable fastening system and method of use |
US6944920B2 (en) * | 2002-10-19 | 2005-09-20 | General Motors Corporation | Electrostatically releasable fastening system and method of use |
US6973701B2 (en) * | 2002-10-19 | 2005-12-13 | General Motors Corporation | Releasable fastening system based on ionic polymer metal composites and method of use |
US7308738B2 (en) * | 2002-10-19 | 2007-12-18 | General Motors Corporation | Releasable fastener systems and processes |
US7539045B2 (en) * | 2002-11-28 | 2009-05-26 | Nxp B.V. | Method and device for improved magnetic field generation during a write operation of a magnetoresistive memory device |
DE10301092B4 (de) * | 2003-01-14 | 2006-06-29 | Infineon Technologies Ag | MRAM-Speicherzelle |
FR2851668A1 (fr) * | 2003-02-24 | 2004-08-27 | St Microelectronics Sa | Procede et dispositif de selection de mode de fonctionnement d'un circuit integre |
US7173847B2 (en) * | 2003-05-20 | 2007-02-06 | Magsil Corporation | Magnetic storage cell |
US7219113B2 (en) * | 2003-09-26 | 2007-05-15 | International Business Machines Corporation | Pseudo-random binary sequence checker with automatic synchronization |
US6970379B2 (en) * | 2003-10-14 | 2005-11-29 | International Business Machines Corporation | System and method for storing data in an unpatterned, continuous magnetic layer |
JP4377751B2 (ja) * | 2004-06-10 | 2009-12-02 | シャープ株式会社 | クロスポイント構造の半導体記憶装置及びその製造方法 |
US7313013B2 (en) * | 2004-11-18 | 2007-12-25 | International Business Machines Corporation | Spin-current switchable magnetic memory element and method of fabricating the memory element |
JP2006196687A (ja) * | 2005-01-13 | 2006-07-27 | Tdk Corp | 磁気メモリ |
US20060261109A1 (en) * | 2005-05-18 | 2006-11-23 | Browne Alan L | Cargo container including an active material based releasable fastener system |
KR100695163B1 (ko) * | 2005-10-06 | 2007-03-14 | 삼성전자주식회사 | 자기저항 효과를 이용한 상변화 메모리 소자와 그 동작 및제조 방법 |
US7929258B2 (en) * | 2008-01-22 | 2011-04-19 | Seagate Technology Llc | Magnetic sensor including a free layer having perpendicular to the plane anisotropy |
US7902616B2 (en) * | 2008-06-30 | 2011-03-08 | Qimonda Ag | Integrated circuit having a magnetic tunnel junction device and method |
US7863700B2 (en) * | 2008-06-30 | 2011-01-04 | Qimonda Ag | Magnetoresistive sensor with tunnel barrier and method |
US8790798B2 (en) | 2011-04-18 | 2014-07-29 | Alexander Mikhailovich Shukh | Magnetoresistive element and method of manufacturing the same |
US8758909B2 (en) | 2011-04-20 | 2014-06-24 | Alexander Mikhailovich Shukh | Scalable magnetoresistive element |
US8541855B2 (en) * | 2011-05-10 | 2013-09-24 | Magic Technologies, Inc. | Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications |
US9368176B2 (en) | 2012-04-20 | 2016-06-14 | Alexander Mikhailovich Shukh | Scalable magnetoresistive element |
US9524765B2 (en) * | 2014-08-15 | 2016-12-20 | Qualcomm Incorporated | Differential magnetic tunnel junction pair including a sense layer with a high coercivity portion |
US10128310B2 (en) * | 2016-03-14 | 2018-11-13 | Toshiba Memory Corporation | Magnetoresistive memory device and manufacturing method of the same |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5347485A (en) * | 1992-03-03 | 1994-09-13 | Mitsubishi Denki Kabushiki Kaisha | Magnetic thin film memory |
JPH09106514A (ja) | 1995-10-06 | 1997-04-22 | Fujitsu Ltd | 強磁性トンネル素子及びその製造方法 |
US5909345A (en) * | 1996-02-22 | 1999-06-01 | Matsushita Electric Industrial Co., Ltd. | Magnetoresistive device and magnetoresistive head |
JP3351694B2 (ja) | 1996-10-28 | 2002-12-03 | 日本ビクター株式会社 | 磁性メモリ |
JP3679593B2 (ja) | 1998-01-28 | 2005-08-03 | キヤノン株式会社 | 磁性薄膜素子および磁性薄膜メモリ素子およびその記録再生方法 |
EP0959475A3 (de) * | 1998-05-18 | 2000-11-08 | Canon Kabushiki Kaisha | Magnetischer Dünnfilmspeicher sowie Schreibe- und Leseverfahren und Anordnung unter Verwendung solchen Speichers |
-
2001
- 2001-01-03 DE DE60110944T patent/DE60110944T2/de not_active Expired - Lifetime
- 2001-01-03 EP EP01100253A patent/EP1115164B1/de not_active Expired - Lifetime
- 2001-01-05 US US09/755,905 patent/US6628542B2/en not_active Expired - Lifetime
- 2001-01-06 CN CNB011113790A patent/CN1254870C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP1115164A3 (de) | 2002-06-12 |
US20010040819A1 (en) | 2001-11-15 |
EP1115164A2 (de) | 2001-07-11 |
DE60110944T2 (de) | 2006-04-27 |
US6628542B2 (en) | 2003-09-30 |
CN1310481A (zh) | 2001-08-29 |
CN1254870C (zh) | 2006-05-03 |
EP1115164B1 (de) | 2005-05-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |