EP1745488A4 - Spin barrier enhanced magnetoresistance effect element and magnetic memory using the same - Google Patents

Spin barrier enhanced magnetoresistance effect element and magnetic memory using the same

Info

Publication number
EP1745488A4
EP1745488A4 EP05752255A EP05752255A EP1745488A4 EP 1745488 A4 EP1745488 A4 EP 1745488A4 EP 05752255 A EP05752255 A EP 05752255A EP 05752255 A EP05752255 A EP 05752255A EP 1745488 A4 EP1745488 A4 EP 1745488A4
Authority
EP
European Patent Office
Prior art keywords
same
magnetic memory
effect element
magnetoresistance effect
spin barrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP05752255A
Other languages
German (de)
French (fr)
Other versions
EP1745488B1 (en
EP1745488A2 (en
Inventor
Valet Thierry
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Grandis Inc
Original Assignee
Grandis Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Grandis Inc filed Critical Grandis Inc
Publication of EP1745488A2 publication Critical patent/EP1745488A2/en
Publication of EP1745488A4 publication Critical patent/EP1745488A4/en
Application granted granted Critical
Publication of EP1745488B1 publication Critical patent/EP1745488B1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Magnetic active materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Magnetic Heads (AREA)
EP05752255A 2004-05-11 2005-05-11 Spin barrier enhanced magnetoresistance effect element and magnetic memory using the same Active EP1745488B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/843,157 US7088609B2 (en) 2004-05-11 2004-05-11 Spin barrier enhanced magnetoresistance effect element and magnetic memory using the same
PCT/US2005/017531 WO2005112034A2 (en) 2004-05-11 2005-05-11 Spin barrier enhanced magnetoresistance effect element and magnetic memory using the same

Publications (3)

Publication Number Publication Date
EP1745488A2 EP1745488A2 (en) 2007-01-24
EP1745488A4 true EP1745488A4 (en) 2008-06-25
EP1745488B1 EP1745488B1 (en) 2010-07-07

Family

ID=35309235

Family Applications (1)

Application Number Title Priority Date Filing Date
EP05752255A Active EP1745488B1 (en) 2004-05-11 2005-05-11 Spin barrier enhanced magnetoresistance effect element and magnetic memory using the same

Country Status (7)

Country Link
US (1) US7088609B2 (en)
EP (1) EP1745488B1 (en)
JP (1) JP2007537608A (en)
KR (1) KR100869187B1 (en)
CN (1) CN1961377A (en)
DE (1) DE602005022180D1 (en)
WO (1) WO2005112034A2 (en)

Families Citing this family (132)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4144563B2 (en) * 2003-07-11 2008-09-03 ティアック株式会社 Disk unit
JP4406250B2 (en) * 2003-09-24 2010-01-27 株式会社東芝 Spin tunnel transistor
US20110140217A1 (en) * 2004-02-26 2011-06-16 Grandis, Inc. Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization
US6992359B2 (en) * 2004-02-26 2006-01-31 Grandis, Inc. Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization
US7672086B1 (en) * 2004-04-28 2010-03-02 Western Digital (Fremont), Llc Method and system for providing a magnetic element having a current confined layer
US7576956B2 (en) * 2004-07-26 2009-08-18 Grandis Inc. Magnetic tunnel junction having diffusion stop layer
US7224601B2 (en) * 2005-08-25 2007-05-29 Grandis Inc. Oscillating-field assisted spin torque switching of a magnetic tunnel junction memory element
US7777261B2 (en) * 2005-09-20 2010-08-17 Grandis Inc. Magnetic device having stabilized free ferromagnetic layer
US7859034B2 (en) * 2005-09-20 2010-12-28 Grandis Inc. Magnetic devices having oxide antiferromagnetic layer next to free ferromagnetic layer
US7973349B2 (en) 2005-09-20 2011-07-05 Grandis Inc. Magnetic device having multilayered free ferromagnetic layer
US20070085068A1 (en) * 2005-10-14 2007-04-19 Dmytro Apalkov Spin transfer based magnetic storage cells utilizing granular free layers and magnetic memories using such cells
JP5040105B2 (en) 2005-12-01 2012-10-03 ソニー株式会社 Memory element, memory
JP5049491B2 (en) * 2005-12-22 2012-10-17 パナソニック株式会社 ELECTRIC ELEMENT, MEMORY DEVICE, AND SEMICONDUCTOR INTEGRATED CIRCUIT
US7430135B2 (en) * 2005-12-23 2008-09-30 Grandis Inc. Current-switched spin-transfer magnetic devices with reduced spin-transfer switching current density
US8063459B2 (en) * 2007-02-12 2011-11-22 Avalanche Technologies, Inc. Non-volatile magnetic memory element with graded layer
US8084835B2 (en) * 2006-10-20 2011-12-27 Avalanche Technology, Inc. Non-uniform switching based non-volatile magnetic based memory
US8508984B2 (en) * 2006-02-25 2013-08-13 Avalanche Technology, Inc. Low resistance high-TMR magnetic tunnel junction and process for fabrication thereof
US8018011B2 (en) * 2007-02-12 2011-09-13 Avalanche Technology, Inc. Low cost multi-state magnetic memory
US7732881B2 (en) * 2006-11-01 2010-06-08 Avalanche Technology, Inc. Current-confined effect of magnetic nano-current-channel (NCC) for magnetic random access memory (MRAM)
US20080246104A1 (en) * 2007-02-12 2008-10-09 Yadav Technology High Capacity Low Cost Multi-State Magnetic Memory
US8535952B2 (en) * 2006-02-25 2013-09-17 Avalanche Technology, Inc. Method for manufacturing non-volatile magnetic memory
US8058696B2 (en) * 2006-02-25 2011-11-15 Avalanche Technology, Inc. High capacity low cost multi-state magnetic memory
US8183652B2 (en) * 2007-02-12 2012-05-22 Avalanche Technology, Inc. Non-volatile magnetic memory with low switching current and high thermal stability
US8363457B2 (en) * 2006-02-25 2013-01-29 Avalanche Technology, Inc. Magnetic memory sensing circuit
US20070253245A1 (en) * 2006-04-27 2007-11-01 Yadav Technology High Capacity Low Cost Multi-Stacked Cross-Line Magnetic Memory
US20070246787A1 (en) * 2006-03-29 2007-10-25 Lien-Chang Wang On-plug magnetic tunnel junction devices based on spin torque transfer switching
JP4758812B2 (en) * 2006-04-26 2011-08-31 株式会社日立製作所 Spin accumulation device having spin current confinement layer and method of manufacturing the same
US8120949B2 (en) * 2006-04-27 2012-02-21 Avalanche Technology, Inc. Low-cost non-volatile flash-RAM memory
US7782577B2 (en) * 2006-06-06 2010-08-24 Infineon Technologies Ag MRAM structure using sacrificial layer for anti-ferromagnet and method of manufacture
US7851840B2 (en) 2006-09-13 2010-12-14 Grandis Inc. Devices and circuits based on magnetic tunnel junctions utilizing a multilayer barrier
JP4380693B2 (en) 2006-12-12 2009-12-09 ソニー株式会社 Memory element, memory
US7508042B2 (en) 2006-12-22 2009-03-24 Magic Technologies, Inc. Spin transfer MRAM device with magnetic biasing
JP2008166608A (en) * 2006-12-28 2008-07-17 Tdk Corp Spin device
US8542524B2 (en) * 2007-02-12 2013-09-24 Avalanche Technology, Inc. Magnetic random access memory (MRAM) manufacturing process for a small magnetic tunnel junction (MTJ) design with a low programming current requirement
US20090218645A1 (en) * 2007-02-12 2009-09-03 Yadav Technology Inc. multi-state spin-torque transfer magnetic random access memory
US7869266B2 (en) * 2007-10-31 2011-01-11 Avalanche Technology, Inc. Low current switching magnetic tunnel junction design for magnetic memory using domain wall motion
JP5143444B2 (en) * 2007-02-13 2013-02-13 株式会社日立製作所 Magnetoresistive element, magnetic memory cell and magnetic random access memory using the same
JP5157268B2 (en) * 2007-06-13 2013-03-06 株式会社日立製作所 Spin accumulation magnetization reversal type memory device and spin RAM
US7957179B2 (en) 2007-06-27 2011-06-07 Grandis Inc. Magnetic shielding in magnetic multilayer structures
US7982275B2 (en) * 2007-08-22 2011-07-19 Grandis Inc. Magnetic element having low saturation magnetization
US8100228B2 (en) * 2007-10-12 2012-01-24 D B Industries, Inc. Portable anchorage assembly
US20090097303A1 (en) * 2007-10-15 2009-04-16 Honeywell International Inc. MRAM with Resistive Property Adjustment
US7688615B2 (en) * 2007-12-04 2010-03-30 Macronix International Co., Ltd. Magnetic random access memory, manufacturing method and programming method thereof
FR2925725B1 (en) * 2007-12-21 2011-03-25 Commissariat Energie Atomique METHOD FOR MODELING SPIN POLARIZED CURRENT WIRE MAGNETIC TUNNEL JUNCTION
US8013406B2 (en) * 2008-01-02 2011-09-06 The Hong Kong University Of Science And Technology Method and apparatus for generating giant spin-dependent chemical potential difference in non-magnetic materials
US8802451B2 (en) 2008-02-29 2014-08-12 Avalanche Technology Inc. Method for manufacturing high density non-volatile magnetic memory
FR2929041B1 (en) * 2008-03-18 2012-11-30 Crocus Technology MAGNETIC ELEMENT WITH THERMALLY ASSISTED WRITING
US7936597B2 (en) * 2008-03-25 2011-05-03 Seagate Technology Llc Multilevel magnetic storage device
US8659852B2 (en) 2008-04-21 2014-02-25 Seagate Technology Llc Write-once magentic junction memory array
US7999336B2 (en) * 2008-04-24 2011-08-16 Seagate Technology Llc ST-RAM magnetic element configurations to reduce switching current
US7855911B2 (en) 2008-05-23 2010-12-21 Seagate Technology Llc Reconfigurable magnetic logic device using spin torque
US7852663B2 (en) 2008-05-23 2010-12-14 Seagate Technology Llc Nonvolatile programmable logic gates and adders
US20090303779A1 (en) * 2008-06-05 2009-12-10 Young-Shying Chen Spin Torque Transfer MTJ Devices with High Thermal Stability and Low Write Currents
US7804709B2 (en) 2008-07-18 2010-09-28 Seagate Technology Llc Diode assisted switching spin-transfer torque memory unit
US8054677B2 (en) 2008-08-07 2011-11-08 Seagate Technology Llc Magnetic memory with strain-assisted exchange coupling switch
US8223532B2 (en) 2008-08-07 2012-07-17 Seagate Technology Llc Magnetic field assisted STRAM cells
US7935435B2 (en) * 2008-08-08 2011-05-03 Seagate Technology Llc Magnetic memory cell construction
US7881098B2 (en) 2008-08-26 2011-02-01 Seagate Technology Llc Memory with separate read and write paths
US7894248B2 (en) 2008-09-12 2011-02-22 Grandis Inc. Programmable and redundant circuitry based on magnetic tunnel junction (MTJ)
US9929211B2 (en) * 2008-09-24 2018-03-27 Qualcomm Incorporated Reducing spin pumping induced damping of a free layer of a memory device
US8482966B2 (en) * 2008-09-24 2013-07-09 Qualcomm Incorporated Magnetic element utilizing protective sidewall passivation
US7940551B2 (en) * 2008-09-29 2011-05-10 Seagate Technology, Llc STRAM with electronically reflective insulative spacer
US7826256B2 (en) 2008-09-29 2010-11-02 Seagate Technology Llc STRAM with compensation element
US7985994B2 (en) * 2008-09-29 2011-07-26 Seagate Technology Llc Flux-closed STRAM with electronically reflective insulative spacer
US8102700B2 (en) 2008-09-30 2012-01-24 Micron Technology, Inc. Unidirectional spin torque transfer magnetic memory cell structure
US7746687B2 (en) 2008-09-30 2010-06-29 Seagate Technology, Llc Thermally assisted multi-bit MRAM
US8310861B2 (en) * 2008-09-30 2012-11-13 Micron Technology, Inc. STT-MRAM cell structure incorporating piezoelectric stress material
US7876603B2 (en) * 2008-09-30 2011-01-25 Micron Technology, Inc. Spin current generator for STT-MRAM or other spintronics applications
US8169810B2 (en) 2008-10-08 2012-05-01 Seagate Technology Llc Magnetic memory with asymmetric energy barrier
US8487390B2 (en) * 2008-10-08 2013-07-16 Seagate Technology Llc Memory cell with stress-induced anisotropy
US8089132B2 (en) * 2008-10-09 2012-01-03 Seagate Technology Llc Magnetic memory with phonon glass electron crystal material
US8039913B2 (en) 2008-10-09 2011-10-18 Seagate Technology Llc Magnetic stack with laminated layer
US7880209B2 (en) * 2008-10-09 2011-02-01 Seagate Technology Llc MRAM cells including coupled free ferromagnetic layers for stabilization
US8217478B2 (en) * 2008-10-10 2012-07-10 Seagate Technology Llc Magnetic stack with oxide to reduce switching current
US20100091564A1 (en) * 2008-10-10 2010-04-15 Seagate Technology Llc Magnetic stack having reduced switching current
US9165625B2 (en) * 2008-10-30 2015-10-20 Seagate Technology Llc ST-RAM cells with perpendicular anisotropy
US7829964B2 (en) * 2008-10-31 2010-11-09 Industrial Technology Research Institute Magnetic memory element utilizing spin transfer switching
US8045366B2 (en) 2008-11-05 2011-10-25 Seagate Technology Llc STRAM with composite free magnetic element
US7944738B2 (en) * 2008-11-05 2011-05-17 Micron Technology, Inc. Spin torque transfer cell structure utilizing field-induced antiferromagnetic or ferromagnetic coupling
US8043732B2 (en) 2008-11-11 2011-10-25 Seagate Technology Llc Memory cell with radial barrier
US7826181B2 (en) 2008-11-12 2010-11-02 Seagate Technology Llc Magnetic memory with porous non-conductive current confinement layer
US8289756B2 (en) 2008-11-25 2012-10-16 Seagate Technology Llc Non volatile memory including stabilizing structures
US7940600B2 (en) 2008-12-02 2011-05-10 Seagate Technology Llc Non-volatile memory with stray magnetic field compensation
US7859892B2 (en) * 2008-12-03 2010-12-28 Seagate Technology Llc Magnetic random access memory with dual spin torque reference layers
US8184476B2 (en) * 2008-12-26 2012-05-22 Everspin Technologies, Inc. Random access memory architecture including midpoint reference
US8553449B2 (en) * 2009-01-09 2013-10-08 Micron Technology, Inc. STT-MRAM cell structures
US7957182B2 (en) 2009-01-12 2011-06-07 Micron Technology, Inc. Memory cell having nonmagnetic filament contact and methods of operating and fabricating the same
US7826259B2 (en) * 2009-01-29 2010-11-02 Seagate Technology Llc Staggered STRAM cell
US8120126B2 (en) * 2009-03-02 2012-02-21 Qualcomm Incorporated Magnetic tunnel junction device and fabrication
US8053255B2 (en) * 2009-03-03 2011-11-08 Seagate Technology Llc STRAM with compensation element and method of making the same
US7834410B2 (en) * 2009-04-13 2010-11-16 Taiwan Semiconductor Manufacturing Company, Ltd. Spin torque transfer magnetic tunnel junction structure
US7936598B2 (en) 2009-04-28 2011-05-03 Seagate Technology Magnetic stack having assist layer
US8455267B2 (en) * 2009-05-14 2013-06-04 Qualcomm Incorporated Magnetic tunnel junction device and fabrication
US8363459B2 (en) * 2009-06-11 2013-01-29 Qualcomm Incorporated Magnetic tunnel junction device and fabrication
US7999338B2 (en) 2009-07-13 2011-08-16 Seagate Technology Llc Magnetic stack having reference layers with orthogonal magnetization orientation directions
US8183653B2 (en) 2009-07-13 2012-05-22 Seagate Technology Llc Magnetic tunnel junction having coherent tunneling structure
US20110031569A1 (en) * 2009-08-10 2011-02-10 Grandis, Inc. Method and system for providing magnetic tunneling junction elements having improved performance through capping layer induced perpendicular anisotropy and memories using such magnetic elements
US10446209B2 (en) 2009-08-10 2019-10-15 Samsung Semiconductor Inc. Method and system for providing magnetic tunneling junction elements having improved performance through capping layer induced perpendicular anisotropy and memories using such magnetic elements
US8913350B2 (en) * 2009-08-10 2014-12-16 Grandis, Inc. Method and system for providing magnetic tunneling junction elements having improved performance through capping layer induced perpendicular anisotropy and memories using such magnetic elements
US8558331B2 (en) 2009-12-08 2013-10-15 Qualcomm Incorporated Magnetic tunnel junction device
US8238143B2 (en) * 2009-12-15 2012-08-07 Qualcomm Incorporated Magnetic tunnel junction device and fabrication
US8513749B2 (en) * 2010-01-14 2013-08-20 Qualcomm Incorporated Composite hardmask architecture and method of creating non-uniform current path for spin torque driven magnetic tunnel junction
KR101684915B1 (en) 2010-07-26 2016-12-12 삼성전자주식회사 Magnetic memory device
KR101676809B1 (en) 2010-08-13 2016-11-16 삼성전자주식회사 Oscillator and method of operating the same
KR101676808B1 (en) 2010-08-25 2016-11-17 삼성전자 주식회사 Oscillator and method of operating the same
KR101701979B1 (en) 2010-09-02 2017-02-03 삼성전자 주식회사 Oscillator and method of operating the same
KR101740485B1 (en) 2010-09-16 2017-05-29 삼성전자 주식회사 Oscillator and methods of manufacturing and operating the same
US8399941B2 (en) 2010-11-05 2013-03-19 Grandis, Inc. Magnetic junction elements having an easy cone anisotropy and a magnetic memory using such magnetic junction elements
KR101777264B1 (en) 2010-11-09 2017-09-12 삼성전자 주식회사 Oscillator and method of operating the same
US8405171B2 (en) * 2010-11-16 2013-03-26 Seagate Technology Llc Memory cell with phonon-blocking insulating layer
US8508973B2 (en) 2010-11-16 2013-08-13 Seagate Technology Llc Method of switching out-of-plane magnetic tunnel junction cells
US9478730B2 (en) 2010-12-31 2016-10-25 Samsung Electronics Co., Ltd. Method and system for providing magnetic layers having insertion layers for use in spin transfer torque memories
US8432009B2 (en) 2010-12-31 2013-04-30 Grandis, Inc. Method and system for providing magnetic layers having insertion layers for use in spin transfer torque memories
CN102298962A (en) * 2011-03-29 2011-12-28 清华大学 Spin transfer torque-random access memory (STT-RAM) storage unit with composite free layer
US8766383B2 (en) 2011-07-07 2014-07-01 Samsung Electronics Co., Ltd. Method and system for providing a magnetic junction using half metallic ferromagnets
US8576519B1 (en) * 2012-10-11 2013-11-05 HGST Netherlands B.V. Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor with magnetic damping material at the sensor edges
JP6182993B2 (en) * 2013-06-17 2017-08-23 ソニー株式会社 Storage element, storage device, storage element manufacturing method, and magnetic head
US20170200767A1 (en) * 2014-09-11 2017-07-13 Agency For Science, Technology And Research Magnetic element and method of fabrication thereof
US9734850B1 (en) 2016-06-28 2017-08-15 Western Digital Technologies, Inc. Magnetic tunnel junction (MTJ) free layer damping reduction
CN106783809B (en) * 2016-11-23 2019-03-01 华东师范大学 A kind of coaxial capacitor and preparation method of spinning
US10522745B2 (en) 2017-12-14 2019-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. Low resistance MgO capping layer for perpendicularly magnetized magnetic tunnel junctions
US10541269B2 (en) 2018-06-26 2020-01-21 Taiwan Semiconductor Manufacturing Co., Ltd. Magnetic random access memory and manufacturing method thereof
US10797225B2 (en) * 2018-09-18 2020-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Dual magnetic tunnel junction (DMTJ) stack design
US10700125B2 (en) * 2018-09-28 2020-06-30 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated system chip with magnetic module
CN112490354A (en) * 2019-09-11 2021-03-12 上海磁宇信息科技有限公司 Magnetic random access memory storage unit and magnetic random access memory
CN112490353A (en) * 2019-09-11 2021-03-12 上海磁宇信息科技有限公司 Magnetic random access memory storage unit and magnetic random access memory
CN112635654A (en) * 2019-10-08 2021-04-09 上海磁宇信息科技有限公司 Magnetic tunnel junction structure and magnetic random access memory
CN112635649A (en) * 2019-10-08 2021-04-09 上海磁宇信息科技有限公司 Magnetic tunnel junction structure and magnetic random access memory
CN112652703A (en) * 2019-10-10 2021-04-13 上海磁宇信息科技有限公司 Magnetic tunnel junction structure and magnetic memory thereof
CN112864307A (en) * 2019-11-28 2021-05-28 上海磁宇信息科技有限公司 Magnetic random access memory storage unit and magnetic random access memory
KR20220053248A (en) * 2020-10-22 2022-04-29 삼성전자주식회사 Magnetic device
US11957063B2 (en) * 2021-08-28 2024-04-09 Yimin Guo Magnetoresistive element having a nano-current-channel structure

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005029497A2 (en) * 2003-09-19 2005-03-31 Grandis, Inc. Current confined pass layer for magnetic elements utilizing spin-transfer and an mram device using such magnetic elements

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2817999B1 (en) * 2000-12-07 2003-01-10 Commissariat Energie Atomique MAGNETIC DEVICE WITH POLARIZATION OF SPIN AND A STRIP (S) TRI-LAYER (S) AND MEMORY USING THE DEVICE
US6418048B1 (en) * 2001-08-15 2002-07-09 Read-Rite Corporation Spin-dependent tunneling sensor suitable for a magnetic memory
JP2003101098A (en) * 2001-09-20 2003-04-04 Ken Takahashi Tunneling magnetoresistive element and magnetic device using the same, and method and device for manufacturing the same
JP3897348B2 (en) * 2002-03-29 2007-03-22 株式会社東芝 Solid magnetic element and solid magnetic element array
US6838740B2 (en) * 2002-09-27 2005-01-04 Grandis, Inc. Thermally stable magnetic elements utilizing spin transfer and an MRAM device using the magnetic element
JP4371781B2 (en) * 2002-11-26 2009-11-25 株式会社東芝 Magnetic cell and magnetic memory
US6847547B2 (en) * 2003-02-28 2005-01-25 Grandis, Inc. Magnetostatically coupled magnetic elements utilizing spin transfer and an MRAM device using the magnetic element
JP4212397B2 (en) * 2003-03-28 2009-01-21 株式会社東芝 Magnetic memory and writing method thereof
US7538987B2 (en) * 2003-07-03 2009-05-26 University Of Alabama CPP spin-valve element
US7282755B2 (en) * 2003-11-14 2007-10-16 Grandis, Inc. Stress assisted current driven switching for magnetic memory applications
US20050136600A1 (en) * 2003-12-22 2005-06-23 Yiming Huai Magnetic elements with ballistic magnetoresistance utilizing spin-transfer and an MRAM device using such magnetic elements

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005029497A2 (en) * 2003-09-19 2005-03-31 Grandis, Inc. Current confined pass layer for magnetic elements utilizing spin-transfer and an mram device using such magnetic elements

Also Published As

Publication number Publication date
WO2005112034A2 (en) 2005-11-24
EP1745488B1 (en) 2010-07-07
KR100869187B1 (en) 2008-11-18
DE602005022180D1 (en) 2010-08-19
US20050254287A1 (en) 2005-11-17
CN1961377A (en) 2007-05-09
EP1745488A2 (en) 2007-01-24
JP2007537608A (en) 2007-12-20
WO2005112034A3 (en) 2006-02-16
US7088609B2 (en) 2006-08-08
KR20070004094A (en) 2007-01-05

Similar Documents

Publication Publication Date Title
EP1745488A4 (en) Spin barrier enhanced magnetoresistance effect element and magnetic memory using the same
EP1751764A4 (en) Spin barrier enhanced dual magnetoresistance effect element and magnetic memory using the same
TWI349980B (en) Magnetoresistive random access memory device structures and methods for fabricating the same
EP1889261A4 (en) Fast magnetic memory devices utilizing spin transfer and magnetic elements used therein
DE60309190D1 (en) MAGNETIC ELEMENT WITH SPINTRANSFER AND MRAM ELEMENT WITH THE MAGNETIC ELEMENT
EP1716561A4 (en) Spin transfer magnetic element having low saturation magnetization free layers
EP1580821A4 (en) Magnetoresistance effect element, magnetic memory element, magnetic memory device, and their manufacturing method
AU2003249035A8 (en) Magnetoresistive random access memory with soft magnetic reference layer
HK1110556A1 (en) Security element comprising magnetic materials having the same remanence and a different coercive field intensity
HK1080605A1 (en) Method for manufacturing magnetic sensor, magnet array used in the method, and method for manufacturing the magnet array
TWI371035B (en) Magnetic tunnel junctions magnetoresistive structures using amorphous materials as reference and free layers and methods making the same
EP1647830A4 (en) Three-dimensional magnetic direction sensor, and magneto-impedance sensor element
EP1917678A4 (en) Magnetic devices and techniques for formation thereof
GB2398920B (en) Spin valve magnetoresistive element
AU2003294352A8 (en) Magnetic memory element and memory device including same
DE602006001687D1 (en) Magnetoresistive device and magnetic memory with it
EP2333826A4 (en) Magnetic memory element and storage device using same
EP1768840A4 (en) Exchange-bias based multi-state magnetic memory and logic devices and magnetically stabilized magnetic storage
EP1526588A4 (en) Magnetoresistance effect element and magnetic memory unit
SG119278A1 (en) Magnetic disk and magnetic disk device provided with the same
SG119279A1 (en) Magnetic disk and magnetic disk device provided with the same
DE202005018808U1 (en) Winding device with central locking and unlocking
EP1810354A4 (en) Current induced magnetoresistance device
EP1886344A4 (en) Memory element and semiconductor device
GB0501313D0 (en) Magnetic memory device

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20061027

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): DE FR GB

DAX Request for extension of the european patent (deleted)
RBV Designated contracting states (corrected)

Designated state(s): DE FR GB

A4 Supplementary search report drawn up and despatched

Effective date: 20080523

RIC1 Information provided on ipc code assigned before grant

Ipc: G11C 11/16 20060101AFI20080516BHEP

17Q First examination report despatched

Effective date: 20080718

GRAP Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOSNIGR1

GRAS Grant fee paid

Free format text: ORIGINAL CODE: EPIDOSNIGR3

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): DE FR GB

REG Reference to a national code

Ref country code: GB

Ref legal event code: FG4D

REF Corresponds to:

Ref document number: 602005022180

Country of ref document: DE

Date of ref document: 20100819

Kind code of ref document: P

PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

26N No opposition filed

Effective date: 20110408

REG Reference to a national code

Ref country code: DE

Ref legal event code: R097

Ref document number: 602005022180

Country of ref document: DE

Effective date: 20110408

GBPC Gb: european patent ceased through non-payment of renewal fee

Effective date: 20110511

REG Reference to a national code

Ref country code: FR

Ref legal event code: ST

Effective date: 20120131

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: FR

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20110531

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GB

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20110511

REG Reference to a national code

Ref country code: DE

Ref legal event code: R082

Ref document number: 602005022180

Country of ref document: DE

Representative=s name: DR. WEITZEL & PARTNER PATENT- UND RECHTSANWAEL, DE

Ref country code: DE

Ref legal event code: R081

Ref document number: 602005022180

Country of ref document: DE

Owner name: SAMSUNG SEMICONDUCTOR, INC., SAN JOSE, US

Free format text: FORMER OWNER: GRANDIS, INC., MILPITAS, CALIF., US

P01 Opt-out of the competence of the unified patent court (upc) registered

Effective date: 20230524

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: DE

Payment date: 20230314

Year of fee payment: 19