JP2006086286A5 - - Google Patents

Download PDF

Info

Publication number
JP2006086286A5
JP2006086286A5 JP2004268618A JP2004268618A JP2006086286A5 JP 2006086286 A5 JP2006086286 A5 JP 2006086286A5 JP 2004268618 A JP2004268618 A JP 2004268618A JP 2004268618 A JP2004268618 A JP 2004268618A JP 2006086286 A5 JP2006086286 A5 JP 2006086286A5
Authority
JP
Japan
Prior art keywords
semiconductor device
gate
nonvolatile memory
memory cell
charge storage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2004268618A
Other languages
English (en)
Japanese (ja)
Other versions
JP4546795B2 (ja
JP2006086286A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2004268618A priority Critical patent/JP4546795B2/ja
Priority claimed from JP2004268618A external-priority patent/JP4546795B2/ja
Priority to US11/195,683 priority patent/US7339231B2/en
Publication of JP2006086286A publication Critical patent/JP2006086286A/ja
Publication of JP2006086286A5 publication Critical patent/JP2006086286A5/ja
Application granted granted Critical
Publication of JP4546795B2 publication Critical patent/JP4546795B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2004268618A 2004-09-15 2004-09-15 半導体装置 Expired - Fee Related JP4546795B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2004268618A JP4546795B2 (ja) 2004-09-15 2004-09-15 半導体装置
US11/195,683 US7339231B2 (en) 2004-09-15 2005-08-03 Semiconductor device and an integrated circuit card

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004268618A JP4546795B2 (ja) 2004-09-15 2004-09-15 半導体装置

Publications (3)

Publication Number Publication Date
JP2006086286A JP2006086286A (ja) 2006-03-30
JP2006086286A5 true JP2006086286A5 (enExample) 2007-06-28
JP4546795B2 JP4546795B2 (ja) 2010-09-15

Family

ID=35996035

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004268618A Expired - Fee Related JP4546795B2 (ja) 2004-09-15 2004-09-15 半導体装置

Country Status (2)

Country Link
US (1) US7339231B2 (enExample)
JP (1) JP4546795B2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5086558B2 (ja) * 2006-04-04 2012-11-28 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2009010104A (ja) * 2007-06-27 2009-01-15 Renesas Technology Corp 半導体装置およびその製造方法
JP2010067645A (ja) * 2008-09-08 2010-03-25 Renesas Technology Corp 半導体装置およびその製造方法
JP2010282987A (ja) * 2009-06-02 2010-12-16 Renesas Technology Corp 半導体装置およびその製造方法
TWI415251B (zh) * 2010-07-30 2013-11-11 Yield Microelectronics Corp Small area of ​​electronic erasure can be rewritten read only memory array
US8300461B2 (en) * 2010-08-24 2012-10-30 Yield Microelectronics Corp. Area saving electrically-erasable-programmable read-only memory (EEPROM) array
US9685339B2 (en) * 2013-04-30 2017-06-20 Nxp Usa, Inc. Scalable split gate memory cell array

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH043470A (ja) * 1990-04-20 1992-01-08 Citizen Watch Co Ltd 半導体不揮発性記憶装置およびその書き込み方法
JPH0444365A (ja) * 1990-06-11 1992-02-14 Mitsubishi Electric Corp 不揮発性半導体記憶装置
JP3173907B2 (ja) * 1992-12-22 2001-06-04 ローム株式会社 不揮発性記憶素子およびその製造方法
JP3465397B2 (ja) * 1995-01-26 2003-11-10 ソニー株式会社 半導体不揮発性メモリ装置
JP2002025287A (ja) * 2000-07-12 2002-01-25 Hitachi Ltd 半導体記憶装置
JP4647175B2 (ja) * 2002-04-18 2011-03-09 ルネサスエレクトロニクス株式会社 半導体集積回路装置
WO2004023385A1 (ja) 2002-08-29 2004-03-18 Renesas Technology Corp. 半導体処理装置及びｉｃカード
WO2006018862A1 (ja) * 2004-08-16 2006-02-23 Fujitsu Limited 不揮発性半導体メモリ

Similar Documents

Publication Publication Date Title
US7683404B2 (en) Stacked memory and method for forming the same
CN102610615B (zh) 三维nor型阵列的存储器装置
US8890233B2 (en) 3D memory array with improved SSL and BL contact layout
US8503213B2 (en) Memory architecture of 3D array with alternating memory string orientation and string select structures
US8785276B2 (en) Methods for fabricating a cell string and a non-volatile memory device including the cell string
CN102194821B (zh) 具有改良串行选择线和位线接触布局的三维存储阵列
JP2006041354A5 (enExample)
TW202017152A (zh) 半導體裝置及半導體記憶裝置
JP2011129893A5 (enExample)
JPWO2020157558A5 (ja) 記憶装置
JP2009033177A5 (enExample)
CN1841748A (zh) 三维存储装置及其制造和操作方法
CN102842339A (zh) 一种三维阵列存储器装置及其操作方法
KR20100007229A (ko) 비휘발성 메모리 소자 및 그 제조 방법
JP2007081335A5 (enExample)
JP2003332468A5 (enExample)
JP2003078040A5 (ja) 半導体集積回路装置
US9293552B2 (en) Nonvolatile semiconductor memory device
JP2006086286A5 (enExample)
US20090315094A1 (en) Nonvolatile Memory Device
JP2007294928A5 (enExample)
JP2006339599A5 (enExample)
JP6031394B2 (ja) ３ｄｎａｎｄフラッシュメモリ
JP2003188287A5 (enExample)
JP2010114153A (ja) 不揮発性半導体記憶装置