JP2006339599A5 - - Google Patents

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Publication number
JP2006339599A5
JP2006339599A5 JP2005165854A JP2005165854A JP2006339599A5 JP 2006339599 A5 JP2006339599 A5 JP 2006339599A5 JP 2005165854 A JP2005165854 A JP 2005165854A JP 2005165854 A JP2005165854 A JP 2005165854A JP 2006339599 A5 JP2006339599 A5 JP 2006339599A5
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JP
Japan
Prior art keywords
film
insulating film
semiconductor device
nitrogen
silicon oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2005165854A
Other languages
English (en)
Japanese (ja)
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JP2006339599A (ja
JP4892199B2 (ja
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Publication date
Application filed filed Critical
Priority to JP2005165854A priority Critical patent/JP4892199B2/ja
Priority claimed from JP2005165854A external-priority patent/JP4892199B2/ja
Priority to US11/446,220 priority patent/US7692233B2/en
Publication of JP2006339599A publication Critical patent/JP2006339599A/ja
Publication of JP2006339599A5 publication Critical patent/JP2006339599A5/ja
Application granted granted Critical
Publication of JP4892199B2 publication Critical patent/JP4892199B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2005165854A 2005-06-06 2005-06-06 不揮発性半導体記憶装置の製造方法 Expired - Fee Related JP4892199B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2005165854A JP4892199B2 (ja) 2005-06-06 2005-06-06 不揮発性半導体記憶装置の製造方法
US11/446,220 US7692233B2 (en) 2005-06-06 2006-06-05 Semiconductor device and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005165854A JP4892199B2 (ja) 2005-06-06 2005-06-06 不揮発性半導体記憶装置の製造方法

Publications (3)

Publication Number Publication Date
JP2006339599A JP2006339599A (ja) 2006-12-14
JP2006339599A5 true JP2006339599A5 (enExample) 2008-07-17
JP4892199B2 JP4892199B2 (ja) 2012-03-07

Family

ID=37493314

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005165854A Expired - Fee Related JP4892199B2 (ja) 2005-06-06 2005-06-06 不揮発性半導体記憶装置の製造方法

Country Status (2)

Country Link
US (1) US7692233B2 (enExample)
JP (1) JP4892199B2 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007334925A (ja) * 2006-06-12 2007-12-27 Nec Electronics Corp 不揮発性半導体記憶装置
KR100831570B1 (ko) * 2006-12-27 2008-05-21 동부일렉트로닉스 주식회사 플래시 메모리소자 및 그 제조방법
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device
FR2926400A1 (fr) 2008-01-11 2009-07-17 St Microelectronics Rousset Cellule eeprom a perte de charges
JP2009182076A (ja) * 2008-01-30 2009-08-13 Panasonic Corp 半導体装置及びその製造方法
FR2931289A1 (fr) * 2008-05-13 2009-11-20 St Microelectronics Rousset Memoire a structure du type eeprom et a lecture seule
JP2010050208A (ja) * 2008-08-20 2010-03-04 Renesas Technology Corp 半導体記憶装置
KR20100095263A (ko) 2009-02-20 2010-08-30 삼성전자주식회사 비휘발성 메모리 소자 및 그 형성방법
KR101906167B1 (ko) 2011-10-27 2018-10-12 삼성전자주식회사 비휘발성 메모리 장치 및 그 제조 방법
CN110838491B (zh) * 2018-08-15 2022-05-10 无锡华润上华科技有限公司 半导体结构及其制造方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57177560A (en) * 1981-04-24 1982-11-01 Fujitsu Ltd Semiconductor memory
US5095344A (en) 1988-06-08 1992-03-10 Eliyahou Harari Highly compact eprom and flash eeprom devices
US5043940A (en) * 1988-06-08 1991-08-27 Eliyahou Harari Flash EEPROM memory systems having multistate storage cells
JP2670330B2 (ja) * 1989-01-17 1997-10-29 株式会社東芝 不揮発性半導体記憶装置
JP2786041B2 (ja) 1992-01-13 1998-08-13 シャープ株式会社 不揮発性半導体記憶装置の製造方法
JP3600326B2 (ja) * 1994-09-29 2004-12-15 旺宏電子股▲ふん▼有限公司 不揮発性半導体メモリ装置およびその製造方法
JP4149013B2 (ja) * 1996-12-26 2008-09-10 株式会社ルネサステクノロジ 半導体装置
KR100318683B1 (ko) * 1998-12-17 2001-12-28 윤종용 산화막/질화막/산화막 유전층의 형성방법
US6368919B2 (en) * 1999-01-19 2002-04-09 Micron Technology, Inc. Method and composite for decreasing charge leakage
JP2001015619A (ja) 1999-06-30 2001-01-19 Toshiba Corp 不揮発性半導体記憶装置の製造方法
JP4012341B2 (ja) * 1999-07-14 2007-11-21 株式会社ルネサステクノロジ 半導体集積回路装置
JP2003168748A (ja) * 2001-11-30 2003-06-13 Hitachi Ltd 不揮発性半導体記憶装置およびその製造方法
US20030153149A1 (en) * 2002-02-08 2003-08-14 Zhong Dong Floating gate nitridation
JP2004040064A (ja) * 2002-07-01 2004-02-05 Yutaka Hayashi 不揮発性メモリとその製造方法
US7214579B2 (en) * 2002-10-24 2007-05-08 Nxp Bv. Self-aligned 2-bit “double poly CMP” flash memory cell
US7297597B2 (en) * 2004-07-23 2007-11-20 Promos Technologies, Inc. Method for simultaneously fabricating ONO-type memory cell, and gate dielectrics for associated high voltage write transistors and gate dielectrics for low voltage logic transistors by using ISSG
KR100766229B1 (ko) * 2005-05-30 2007-10-10 주식회사 하이닉스반도체 플래시 메모리 소자의 제조 방법

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