JP2008177565A5 - - Google Patents

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JP2008177565A5
JP2008177565A5 JP2008003657A JP2008003657A JP2008177565A5 JP 2008177565 A5 JP2008177565 A5 JP 2008177565A5 JP 2008003657 A JP2008003657 A JP 2008003657A JP 2008003657 A JP2008003657 A JP 2008003657A JP 2008177565 A5 JP2008177565 A5 JP 2008177565A5
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JP2008003657A 2007-01-18 2008-01-10 垂直方向のチャンネルを有するアクセス素子、これを含む半導体装置、及びアクセス素子の形成方法 Active JP5383049B2 (ja)

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Application Number Priority Date Filing Date Title
KR10-2007-0005477 2007-01-18
KR20070005477 2007-01-18
US11/954,135 US8058683B2 (en) 2007-01-18 2007-12-11 Access device having vertical channel and related semiconductor device and a method of fabricating the access device
US11/954,135 2007-12-11

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JP2008177565A JP2008177565A (ja) 2008-07-31
JP2008177565A5 true JP2008177565A5 (enExample) 2011-02-24
JP5383049B2 JP5383049B2 (ja) 2014-01-08

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JP2008003657A Active JP5383049B2 (ja) 2007-01-18 2008-01-10 垂直方向のチャンネルを有するアクセス素子、これを含む半導体装置、及びアクセス素子の形成方法

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US (1) US8058683B2 (enExample)
JP (1) JP5383049B2 (enExample)
KR (1) KR101398494B1 (enExample)
CN (1) CN101226960B (enExample)

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US8482041B2 (en) 2007-10-29 2013-07-09 Unisantis Electronics Singapore Pte Ltd. Semiconductor structure and method of fabricating the semiconductor structure
US8486785B2 (en) 2010-06-09 2013-07-16 Unisantis Electronics Singapore Pte Ltd. Surround gate CMOS semiconductor device
US8487357B2 (en) 2010-03-12 2013-07-16 Unisantis Electronics Singapore Pte Ltd. Solid state imaging device having high sensitivity and high pixel density
US8497548B2 (en) 2009-04-28 2013-07-30 Unisantis Electronics Singapore Pte Ltd. Semiconductor device including a MOS transistor and production method therefor
US8564034B2 (en) 2011-09-08 2013-10-22 Unisantis Electronics Singapore Pte. Ltd. Solid-state imaging device
US8575662B2 (en) 2010-03-08 2013-11-05 Unisantis Electronics Singapore Pte Ltd. Solid state imaging device having high pixel density
US8598650B2 (en) 2008-01-29 2013-12-03 Unisantis Electronics Singapore Pte Ltd. Semiconductor device and production method therefor
US8610202B2 (en) 2009-10-01 2013-12-17 Unisantis Electronics Singapore Pte Ltd. Semiconductor device having a surrounding gate
US8669601B2 (en) 2011-09-15 2014-03-11 Unisantis Electronics Singapore Pte. Ltd. Method for producing semiconductor device and semiconductor device having pillar-shaped semiconductor
US8748938B2 (en) 2012-02-20 2014-06-10 Unisantis Electronics Singapore Pte. Ltd. Solid-state imaging device
US8772175B2 (en) 2011-12-19 2014-07-08 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing semiconductor device and semiconductor device

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US8188537B2 (en) * 2008-01-29 2012-05-29 Unisantis Electronics Singapore Pte Ltd. Semiconductor device and production method therefor
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KR101607265B1 (ko) * 2009-11-12 2016-03-30 삼성전자주식회사 수직 채널 트랜지스터의 제조방법
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KR101159985B1 (ko) * 2010-07-23 2012-06-25 에스케이하이닉스 주식회사 반도체 소자 및 그 제조 방법
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TWI415247B (zh) * 2010-12-15 2013-11-11 Powerchip Technology Corp 具有垂直通道電晶體的動態隨機存取記憶胞及陣列
KR101227339B1 (ko) * 2011-05-12 2013-01-28 에스케이하이닉스 주식회사 반도체 소자 및 그 형성 방법
CN102820300B (zh) * 2011-06-10 2016-03-02 华邦电子股份有限公司 动态随机存取存储器及其制造方法
KR101363272B1 (ko) * 2011-09-01 2014-02-14 서울대학교산학협력단 수직채널을 갖는 모스펫 및 이를 이용한 논리 게이트 소자
JP2013088862A (ja) 2011-10-13 2013-05-13 Elpida Memory Inc レイアウトデータ作成装置及び半導体装置
US8759178B2 (en) 2011-11-09 2014-06-24 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing semiconductor device and semiconductor device
US10438836B2 (en) 2011-11-09 2019-10-08 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing a semiconductor device
US8916478B2 (en) 2011-12-19 2014-12-23 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing semiconductor device and semiconductor device
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US8697511B2 (en) 2012-05-18 2014-04-15 Unisantis Electronics Singapore Pte. Ltd. Method for producing semiconductor device and semiconductor device
KR20140009509A (ko) * 2012-05-18 2014-01-22 유니산티스 일렉트로닉스 싱가포르 프라이빗 리미티드 반도체 장치의 제조 방법 및 반도체 장치
US8877578B2 (en) 2012-05-18 2014-11-04 Unisantis Electronics Singapore Pte. Ltd. Method for producing semiconductor device and semiconductor device
KR101881857B1 (ko) 2012-08-27 2018-08-24 삼성전자주식회사 계단형 패턴 형성 방법
KR101965602B1 (ko) 2012-10-16 2019-04-04 삼성전자주식회사 3차원 반도체 장치의 제조 방법 및 이에 따라 제조된 3차원 반도체 장치
KR101961322B1 (ko) 2012-10-24 2019-03-22 삼성전자주식회사 매립 채널 어레이를 갖는 반도체 소자
KR101974352B1 (ko) 2012-12-07 2019-05-02 삼성전자주식회사 수직 셀을 갖는 반도체 소자의 제조 방법 및 그에 의해 제조된 반도체 소자
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KR102084954B1 (ko) 2013-05-02 2020-03-05 삼성전자주식회사 반도체 장치 및 이의 제조 방법
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US9373620B2 (en) 2014-09-12 2016-06-21 Taiwan Semiconductor Manufacturing Co., Ltd. Series connected transistor structure and method of manufacturing the same
US9691471B2 (en) 2014-09-15 2017-06-27 Taiwan Semiconductor Manufacturing Company, Ltd. SRAM cells with vertical gate-all-round MOSFETs
US9871111B2 (en) * 2014-09-18 2018-01-16 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
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CN106486369B (zh) * 2015-08-27 2020-04-07 中芯国际集成电路制造(上海)有限公司 晶体管及其形成方法
KR102476143B1 (ko) * 2016-02-26 2022-12-12 삼성전자주식회사 반도체 장치
JP6143913B2 (ja) * 2016-04-06 2017-06-07 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 半導体装置の製造方法及び半導体装置
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CN111344841B (zh) * 2017-11-01 2023-07-04 新加坡优尼山帝斯电子私人有限公司 柱状半导体装置、及其制造方法
CN109285836B (zh) 2018-08-28 2023-10-10 中国科学院微电子研究所 半导体存储设备及其制造方法及包括存储设备的电子设备
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Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8482041B2 (en) 2007-10-29 2013-07-09 Unisantis Electronics Singapore Pte Ltd. Semiconductor structure and method of fabricating the semiconductor structure
US8598650B2 (en) 2008-01-29 2013-12-03 Unisantis Electronics Singapore Pte Ltd. Semiconductor device and production method therefor
US8497548B2 (en) 2009-04-28 2013-07-30 Unisantis Electronics Singapore Pte Ltd. Semiconductor device including a MOS transistor and production method therefor
US8647947B2 (en) 2009-04-28 2014-02-11 Unisantis Electronics Singapore Pte Ltd. Semiconductor device including a MOS transistor and production method therefor
US8610202B2 (en) 2009-10-01 2013-12-17 Unisantis Electronics Singapore Pte Ltd. Semiconductor device having a surrounding gate
US8575662B2 (en) 2010-03-08 2013-11-05 Unisantis Electronics Singapore Pte Ltd. Solid state imaging device having high pixel density
US8487357B2 (en) 2010-03-12 2013-07-16 Unisantis Electronics Singapore Pte Ltd. Solid state imaging device having high sensitivity and high pixel density
US8486785B2 (en) 2010-06-09 2013-07-16 Unisantis Electronics Singapore Pte Ltd. Surround gate CMOS semiconductor device
US8609494B2 (en) 2010-06-09 2013-12-17 Unisantis Electronics Singapore Pte Ltd. Surround gate CMOS semiconductor device
US8564034B2 (en) 2011-09-08 2013-10-22 Unisantis Electronics Singapore Pte. Ltd. Solid-state imaging device
US8669601B2 (en) 2011-09-15 2014-03-11 Unisantis Electronics Singapore Pte. Ltd. Method for producing semiconductor device and semiconductor device having pillar-shaped semiconductor
US8772175B2 (en) 2011-12-19 2014-07-08 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing semiconductor device and semiconductor device
US8748938B2 (en) 2012-02-20 2014-06-10 Unisantis Electronics Singapore Pte. Ltd. Solid-state imaging device

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