JP2014138141A5 - - Google Patents

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Publication number
JP2014138141A5
JP2014138141A5 JP2013007115A JP2013007115A JP2014138141A5 JP 2014138141 A5 JP2014138141 A5 JP 2014138141A5 JP 2013007115 A JP2013007115 A JP 2013007115A JP 2013007115 A JP2013007115 A JP 2013007115A JP 2014138141 A5 JP2014138141 A5 JP 2014138141A5
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JP
Japan
Prior art keywords
insulating film
bit line
semiconductor device
conductive layer
interlayer insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2013007115A
Other languages
English (en)
Japanese (ja)
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JP2014138141A (ja
JP6040035B2 (ja
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Priority to JP2013007115A priority Critical patent/JP6040035B2/ja
Priority claimed from JP2013007115A external-priority patent/JP6040035B2/ja
Priority to US14/156,026 priority patent/US9472495B2/en
Publication of JP2014138141A publication Critical patent/JP2014138141A/ja
Publication of JP2014138141A5 publication Critical patent/JP2014138141A5/ja
Application granted granted Critical
Publication of JP6040035B2 publication Critical patent/JP6040035B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2013007115A 2013-01-18 2013-01-18 半導体装置およびその製造方法 Active JP6040035B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2013007115A JP6040035B2 (ja) 2013-01-18 2013-01-18 半導体装置およびその製造方法
US14/156,026 US9472495B2 (en) 2013-01-18 2014-01-15 Semiconductor device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013007115A JP6040035B2 (ja) 2013-01-18 2013-01-18 半導体装置およびその製造方法

Publications (3)

Publication Number Publication Date
JP2014138141A JP2014138141A (ja) 2014-07-28
JP2014138141A5 true JP2014138141A5 (enExample) 2015-10-15
JP6040035B2 JP6040035B2 (ja) 2016-12-07

Family

ID=51207098

Family Applications (1)

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JP2013007115A Active JP6040035B2 (ja) 2013-01-18 2013-01-18 半導体装置およびその製造方法

Country Status (2)

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US (1) US9472495B2 (enExample)
JP (1) JP6040035B2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6448424B2 (ja) * 2015-03-17 2019-01-09 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US10896873B2 (en) * 2018-11-16 2021-01-19 Google Llc Massive deep trench capacitor die fill for high performance application specific integrated circuit (ASIC) applications
KR102890492B1 (ko) * 2020-12-17 2025-11-26 삼성전자주식회사 반도체 소자 및 그의 제조 방법

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100258576B1 (ko) * 1997-11-04 2000-06-15 윤종용 반도체 장치의 마이크로 콘택 형성 방법
JP2001102550A (ja) * 1999-09-02 2001-04-13 Samsung Electronics Co Ltd 自己整合コンタクトを有する半導体メモリ装置及びその製造方法
KR100331568B1 (ko) * 2000-05-26 2002-04-06 윤종용 반도체 메모리 소자 및 그 제조방법
US6563162B2 (en) * 2001-03-21 2003-05-13 Samsung Electronics Co., Ltd. Semiconductor memory device for reducing parasitic bit line capacitance and method of fabricating the same
KR100408411B1 (ko) * 2001-06-01 2003-12-06 삼성전자주식회사 반도체 메모리 소자 및 그 제조방법
JP2011077539A (ja) 2003-06-30 2011-04-14 Renesas Electronics Corp 半導体装置とその製造方法
JP4658486B2 (ja) 2003-06-30 2011-03-23 ルネサスエレクトロニクス株式会社 半導体装置とその製造方法
US7247537B2 (en) * 2003-08-18 2007-07-24 Samsung Electronics Co., Ltd. Semiconductor device including an improved capacitor and method for manufacturing the same
JP2009016596A (ja) * 2007-07-05 2009-01-22 Elpida Memory Inc 半導体装置及び半導体装置の製造方法
KR101283574B1 (ko) * 2007-08-09 2013-07-08 삼성전자주식회사 질소를 함유하는 절연막 형성 방법 및 그것을 포함하는플래시 메모리 소자의 제조 방법
JP2010040538A (ja) 2008-07-31 2010-02-18 Toshiba Corp 半導体装置の製造方法
JP2012054342A (ja) 2010-08-31 2012-03-15 Toshiba Corp 半導体装置およびその製造方法

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