JP2009105227A5 - - Google Patents

Download PDF

Info

Publication number
JP2009105227A5
JP2009105227A5 JP2007275691A JP2007275691A JP2009105227A5 JP 2009105227 A5 JP2009105227 A5 JP 2009105227A5 JP 2007275691 A JP2007275691 A JP 2007275691A JP 2007275691 A JP2007275691 A JP 2007275691A JP 2009105227 A5 JP2009105227 A5 JP 2009105227A5
Authority
JP
Japan
Prior art keywords
region
gate trench
element isolation
semiconductor device
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2007275691A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009105227A (ja
JP5538672B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2007275691A priority Critical patent/JP5538672B2/ja
Priority claimed from JP2007275691A external-priority patent/JP5538672B2/ja
Priority to US12/255,817 priority patent/US7923773B2/en
Publication of JP2009105227A publication Critical patent/JP2009105227A/ja
Publication of JP2009105227A5 publication Critical patent/JP2009105227A5/ja
Application granted granted Critical
Publication of JP5538672B2 publication Critical patent/JP5538672B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2007275691A 2007-10-23 2007-10-23 半導体装置及びその製造方法並びにデータ処理システム Expired - Fee Related JP5538672B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2007275691A JP5538672B2 (ja) 2007-10-23 2007-10-23 半導体装置及びその製造方法並びにデータ処理システム
US12/255,817 US7923773B2 (en) 2007-10-23 2008-10-22 Semiconductor device, manufacturing method thereof, and data processing system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007275691A JP5538672B2 (ja) 2007-10-23 2007-10-23 半導体装置及びその製造方法並びにデータ処理システム

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014093411A Division JP2014160858A (ja) 2014-04-30 2014-04-30 半導体装置

Publications (3)

Publication Number Publication Date
JP2009105227A JP2009105227A (ja) 2009-05-14
JP2009105227A5 true JP2009105227A5 (enExample) 2011-05-26
JP5538672B2 JP5538672B2 (ja) 2014-07-02

Family

ID=40562602

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007275691A Expired - Fee Related JP5538672B2 (ja) 2007-10-23 2007-10-23 半導体装置及びその製造方法並びにデータ処理システム

Country Status (2)

Country Link
US (1) US7923773B2 (enExample)
JP (1) JP5538672B2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010050133A (ja) * 2008-08-19 2010-03-04 Elpida Memory Inc 半導体装置及び半導体装置の製造方法
US8647935B2 (en) * 2010-12-17 2014-02-11 International Business Machines Corporation Buried oxidation for enhanced mobility
KR20130055981A (ko) * 2011-11-21 2013-05-29 에스케이하이닉스 주식회사 반도체 소자의 제조 방법
JP2014022388A (ja) * 2012-07-12 2014-02-03 Ps4 Luxco S A R L 半導体装置及びその製造方法
US10084040B2 (en) * 2015-12-30 2018-09-25 Taiwan Semiconductor Manufacturing Co., Ltd. Seamless gap fill
US20200211840A1 (en) * 2017-07-19 2020-07-02 Globalwafers Japan Co., Ltd. Method for producing three-dimensional structure, method for producing vertical transistor, vertical transistor wafer, and vertical transistor substrate
US20230197809A1 (en) * 2021-12-17 2023-06-22 Nanya Technology Corporation Semiconductor structure having a fin structure
TWI817374B (zh) * 2021-12-17 2023-10-01 南亞科技股份有限公司 具有鰭式結構的半導體結構及其製備方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06112480A (ja) * 1992-09-25 1994-04-22 Kawasaki Steel Corp 半導体装置並びにその製造方法
JPH08274277A (ja) 1995-03-31 1996-10-18 Toyota Central Res & Dev Lab Inc 半導体記憶装置およびその製造方法
KR100539276B1 (ko) * 2003-04-02 2005-12-27 삼성전자주식회사 게이트 라인을 포함하는 반도체 장치 및 이의 제조 방법
US6844591B1 (en) * 2003-09-17 2005-01-18 Micron Technology, Inc. Method of forming DRAM access transistors
US7189617B2 (en) * 2005-04-14 2007-03-13 Infineon Technologies Ag Manufacturing method for a recessed channel array transistor and corresponding recessed channel array transistor
JP2007158269A (ja) * 2005-12-08 2007-06-21 Elpida Memory Inc 半導体装置及びその製造方法
JP2007194333A (ja) * 2006-01-18 2007-08-02 Elpida Memory Inc 半導体装置の製造方法
US7795096B2 (en) * 2006-12-29 2010-09-14 Qimonda Ag Method of forming an integrated circuit with two types of transistors
JP2008171863A (ja) * 2007-01-09 2008-07-24 Elpida Memory Inc トレンチゲートの形成方法
JP2008186979A (ja) * 2007-01-30 2008-08-14 Elpida Memory Inc 半導体装置およびその製造方法
JP2009170857A (ja) * 2007-09-28 2009-07-30 Elpida Memory Inc 半導体装置及びその製造方法

Similar Documents

Publication Publication Date Title
JP2009105227A5 (enExample)
EP1923908A3 (en) Fin-FET device with a void between pairs of fins and method of manufacturing the same
JP2012015500A5 (enExample)
US20100102361A1 (en) Vertical transistor and fabricating method thereof and vertical transistor array
CN106024784B (zh) 包括场效应晶体管的半导体装置
EP2755237A3 (en) Trench MOS gate semiconductor device and method of fabricating the same
US9496273B2 (en) Three-dimensional nonvolatile memory device
JP2008300384A (ja) 半導体装置及びその製造方法
JP2016532296A5 (enExample)
JP2017212267A5 (ja) 半導体装置
KR20160116104A (ko) 전계 효과 트랜지스터를 포함하는 반도체 소자
CN104795446A (zh) 沟槽栅mosfet及其制造方法
JP2010258153A5 (ja) 半導体装置の製造方法
CN110890369A (zh) 半导体器件的制备方法和半导体器件
TW200625608A (en) Non-volatile memory device and manufacturing method and operating method thereof
CN104821321A (zh) 半导体存储器装置及其制造方法
US20160380081A1 (en) Finfet and method of fabricating the same
US9691841B2 (en) Semiconductor device
CN101325157A (zh) 一种存储器结构及其制作方法
KR102550939B1 (ko) 비기능 필러들을 갖는 수직 메모리 디바이스
JP2014138141A5 (enExample)
CN106571384B (zh) 凹入式数组器件
CN203746854U (zh) 存储器器件
JP2013183138A (ja) 半導体装置およびその製造方法
TWI456763B (zh) 具有橢圓柱狀鰭的凹入式電晶體