JP2013105852A5 - - Google Patents
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- Publication number
- JP2013105852A5 JP2013105852A5 JP2011247912A JP2011247912A JP2013105852A5 JP 2013105852 A5 JP2013105852 A5 JP 2013105852A5 JP 2011247912 A JP2011247912 A JP 2011247912A JP 2011247912 A JP2011247912 A JP 2011247912A JP 2013105852 A5 JP2013105852 A5 JP 2013105852A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- insulating layer
- region
- electrode layer
- gate electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000004065 semiconductor Substances 0.000 claims 20
- 239000012535 impurity Substances 0.000 claims 8
- 238000005530 etching Methods 0.000 claims 3
- 241001385733 Aesculus indica Species 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000009413 insulation Methods 0.000 claims 1
- 238000005498 polishing Methods 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011247912A JP6063117B2 (ja) | 2011-11-11 | 2011-11-11 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011247912A JP6063117B2 (ja) | 2011-11-11 | 2011-11-11 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013105852A JP2013105852A (ja) | 2013-05-30 |
| JP2013105852A5 true JP2013105852A5 (enExample) | 2014-12-18 |
| JP6063117B2 JP6063117B2 (ja) | 2017-01-18 |
Family
ID=48625198
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011247912A Expired - Fee Related JP6063117B2 (ja) | 2011-11-11 | 2011-11-11 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6063117B2 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015084418A (ja) * | 2013-09-23 | 2015-04-30 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US10002971B2 (en) * | 2014-07-03 | 2018-06-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device including the semiconductor device |
| WO2020188643A1 (ja) * | 2019-03-15 | 2020-09-24 | シャープ株式会社 | 表示装置 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2654258A1 (fr) * | 1989-11-03 | 1991-05-10 | Philips Nv | Procede pour fabriquer un dispositif a transistor mis ayant une electrode de grille en forme de "t" inverse. |
| JP4396599B2 (ja) * | 1997-10-31 | 2010-01-13 | セイコーエプソン株式会社 | 液晶装置及び電子機器並びに投射型表示装置 |
| AU2000223245A1 (en) * | 2000-02-02 | 2001-08-14 | Hitachi Ltd. | Semiconductor device and its manufacturing method |
| JP2002076336A (ja) * | 2000-09-01 | 2002-03-15 | Mitsubishi Electric Corp | 半導体装置およびｓｏｉ基板 |
| GB0225205D0 (en) * | 2002-10-30 | 2002-12-11 | Koninkl Philips Electronics Nv | Thin film transistors and methods of manufacture thereof |
| JP5153136B2 (ja) * | 2005-12-28 | 2013-02-27 | 株式会社半導体エネルギー研究所 | 半導体装置の製造方法 |
| WO2011074407A1 (en) * | 2009-12-18 | 2011-06-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
-
2011
- 2011-11-11 JP JP2011247912A patent/JP6063117B2/ja not_active Expired - Fee Related
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