JP6063117B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6063117B2 JP6063117B2 JP2011247912A JP2011247912A JP6063117B2 JP 6063117 B2 JP6063117 B2 JP 6063117B2 JP 2011247912 A JP2011247912 A JP 2011247912A JP 2011247912 A JP2011247912 A JP 2011247912A JP 6063117 B2 JP6063117 B2 JP 6063117B2
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- Prior art keywords
- electrode layer
- layer
- insulating layer
- transistor
- gate electrode
- Prior art date
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Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
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| JP2015084418A (ja) * | 2013-09-23 | 2015-04-30 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US10002971B2 (en) * | 2014-07-03 | 2018-06-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device including the semiconductor device |
| WO2020188643A1 (ja) * | 2019-03-15 | 2020-09-24 | シャープ株式会社 | 表示装置 |
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| FR2654258A1 (fr) * | 1989-11-03 | 1991-05-10 | Philips Nv | Procede pour fabriquer un dispositif a transistor mis ayant une electrode de grille en forme de "t" inverse. |
| JP4396599B2 (ja) * | 1997-10-31 | 2010-01-13 | セイコーエプソン株式会社 | 液晶装置及び電子機器並びに投射型表示装置 |
| AU2000223245A1 (en) * | 2000-02-02 | 2001-08-14 | Hitachi Ltd. | Semiconductor device and its manufacturing method |
| JP2002076336A (ja) * | 2000-09-01 | 2002-03-15 | Mitsubishi Electric Corp | 半導体装置およびｓｏｉ基板 |
| GB0225205D0 (en) * | 2002-10-30 | 2002-12-11 | Koninkl Philips Electronics Nv | Thin film transistors and methods of manufacture thereof |
| JP5153136B2 (ja) * | 2005-12-28 | 2013-02-27 | 株式会社半導体エネルギー研究所 | 半導体装置の製造方法 |
| WO2011074407A1 (en) * | 2009-12-18 | 2011-06-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
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