JP2003017691A5 - - Google Patents

Download PDF

Info

Publication number
JP2003017691A5
JP2003017691A5 JP2001201280A JP2001201280A JP2003017691A5 JP 2003017691 A5 JP2003017691 A5 JP 2003017691A5 JP 2001201280 A JP2001201280 A JP 2001201280A JP 2001201280 A JP2001201280 A JP 2001201280A JP 2003017691 A5 JP2003017691 A5 JP 2003017691A5
Authority
JP
Japan
Prior art keywords
element isolation
region
type element
substrate
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001201280A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003017691A (ja
JP3798659B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2001201280A external-priority patent/JP3798659B2/ja
Priority to JP2001201280A priority Critical patent/JP3798659B2/ja
Priority to CNB021410828A priority patent/CN1230905C/zh
Priority to KR10-2002-0023055A priority patent/KR100525331B1/ko
Priority to TW091108721A priority patent/TW544911B/zh
Priority to US10/132,520 priority patent/US6632723B2/en
Priority to EP02009262A priority patent/EP1253634A3/en
Publication of JP2003017691A publication Critical patent/JP2003017691A/ja
Publication of JP2003017691A5 publication Critical patent/JP2003017691A5/ja
Publication of JP3798659B2 publication Critical patent/JP3798659B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2001201280A 2001-04-26 2001-07-02 メモリ集積回路 Expired - Fee Related JP3798659B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2001201280A JP3798659B2 (ja) 2001-07-02 2001-07-02 メモリ集積回路
US10/132,520 US6632723B2 (en) 2001-04-26 2002-04-26 Semiconductor device
KR10-2002-0023055A KR100525331B1 (ko) 2001-04-26 2002-04-26 반도체 장치
TW091108721A TW544911B (en) 2001-04-26 2002-04-26 Semiconductor device
CNB021410828A CN1230905C (zh) 2001-04-26 2002-04-26 半导体器件
EP02009262A EP1253634A3 (en) 2001-04-26 2002-04-26 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001201280A JP3798659B2 (ja) 2001-07-02 2001-07-02 メモリ集積回路

Publications (3)

Publication Number Publication Date
JP2003017691A JP2003017691A (ja) 2003-01-17
JP2003017691A5 true JP2003017691A5 (enExample) 2005-07-28
JP3798659B2 JP3798659B2 (ja) 2006-07-19

Family

ID=19038276

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001201280A Expired - Fee Related JP3798659B2 (ja) 2001-04-26 2001-07-02 メモリ集積回路

Country Status (1)

Country Link
JP (1) JP3798659B2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4044510B2 (ja) * 2003-10-30 2008-02-06 株式会社東芝 半導体集積回路装置
JP4058403B2 (ja) 2003-11-21 2008-03-12 株式会社東芝 半導体装置
KR100618698B1 (ko) * 2004-06-21 2006-09-08 주식회사 하이닉스반도체 반도체 소자 및 그의 제조방법
KR100702014B1 (ko) * 2005-05-03 2007-03-30 삼성전자주식회사 수직 채널 트랜지스터 구조를 갖는 단일 트랜지스터 플로팅바디 디램 소자들 및 그 제조방법들
JP4660324B2 (ja) * 2005-09-06 2011-03-30 株式会社東芝 Ｆｂｃメモリ装置
JP2007194259A (ja) * 2006-01-17 2007-08-02 Toshiba Corp 半導体装置及びその製造方法
KR100900232B1 (ko) 2007-05-22 2009-05-29 주식회사 하이닉스반도체 반도체 소자 및 그의 제조방법
JP2009117518A (ja) * 2007-11-05 2009-05-28 Toshiba Corp 半導体記憶装置およびその製造方法

Similar Documents

Publication Publication Date Title
JP2025175014A5 (ja) 半導体装置
KR890702254A (ko) 집적회로 트랜치 셀
JP2024083377A5 (enExample)
JP2008177565A5 (enExample)
JP2006041354A5 (enExample)
TW373318B (en) Semiconductor device and the manufacturing method thereof
JP2009135140A5 (enExample)
JP2002124681A5 (enExample)
SE0303106D0 (sv) Ldmos transistor device, integrated circuit, and fabrication method thereof
US20070019479A1 (en) Semiconductor device and random access memory having single gate electrode corresponding to a pair of channel regions
TW200505274A (en) Electro-luminescence device including a thin film transistor and method of fabricating an electro-luminescence device
KR950021083A (ko) 반도체 장치 및 그 제조방법
JP2002158350A5 (enExample)
JP2002134756A5 (enExample)
KR940020574A (ko) 반도체 기억장치(semiconductor memory device)
KR950034731A (ko) 비휘발성 반도체 메모리장치의 제조방법
JP2003017691A5 (enExample)
KR960019727A (ko) 반도체 메모리장치 및 그 제조방법
JP2006303448A5 (enExample)
CN103222058A (zh) 垂直扩散金属氧化物半导体场效晶体管及其制作方法
JP2001127174A5 (enExample)
TW200703666A (en) Thin film transistor
JP2003037251A5 (enExample)
JPH05291518A (ja) 半導体装置及びその製造方法
JPH11354783A (ja) 半導体装置