JP3798659B2 - メモリ集積回路 - Google Patents

メモリ集積回路 Download PDF

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Publication number
JP3798659B2
JP3798659B2 JP2001201280A JP2001201280A JP3798659B2 JP 3798659 B2 JP3798659 B2 JP 3798659B2 JP 2001201280 A JP2001201280 A JP 2001201280A JP 2001201280 A JP2001201280 A JP 2001201280A JP 3798659 B2 JP3798659 B2 JP 3798659B2
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JP
Japan
Prior art keywords
region
channel region
drain
gate
insulating film
Prior art date
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Expired - Fee Related
Application number
JP2001201280A
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English (en)
Japanese (ja)
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JP2003017691A (ja
JP2003017691A5 (enExample
Inventor
健 梶山
一正 須之内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2001201280A priority Critical patent/JP3798659B2/ja
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to CNB021410828A priority patent/CN1230905C/zh
Priority to US10/132,520 priority patent/US6632723B2/en
Priority to KR10-2002-0023055A priority patent/KR100525331B1/ko
Priority to TW091108721A priority patent/TW544911B/zh
Priority to EP02009262A priority patent/EP1253634A3/en
Publication of JP2003017691A publication Critical patent/JP2003017691A/ja
Publication of JP2003017691A5 publication Critical patent/JP2003017691A5/ja
Application granted granted Critical
Publication of JP3798659B2 publication Critical patent/JP3798659B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Element Separation (AREA)
  • Semiconductor Memories (AREA)
JP2001201280A 2001-04-26 2001-07-02 メモリ集積回路 Expired - Fee Related JP3798659B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2001201280A JP3798659B2 (ja) 2001-07-02 2001-07-02 メモリ集積回路
US10/132,520 US6632723B2 (en) 2001-04-26 2002-04-26 Semiconductor device
KR10-2002-0023055A KR100525331B1 (ko) 2001-04-26 2002-04-26 반도체 장치
TW091108721A TW544911B (en) 2001-04-26 2002-04-26 Semiconductor device
CNB021410828A CN1230905C (zh) 2001-04-26 2002-04-26 半导体器件
EP02009262A EP1253634A3 (en) 2001-04-26 2002-04-26 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001201280A JP3798659B2 (ja) 2001-07-02 2001-07-02 メモリ集積回路

Publications (3)

Publication Number Publication Date
JP2003017691A JP2003017691A (ja) 2003-01-17
JP2003017691A5 JP2003017691A5 (enExample) 2005-07-28
JP3798659B2 true JP3798659B2 (ja) 2006-07-19

Family

ID=19038276

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001201280A Expired - Fee Related JP3798659B2 (ja) 2001-04-26 2001-07-02 メモリ集積回路

Country Status (1)

Country Link
JP (1) JP3798659B2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4044510B2 (ja) * 2003-10-30 2008-02-06 株式会社東芝 半導体集積回路装置
JP4058403B2 (ja) 2003-11-21 2008-03-12 株式会社東芝 半導体装置
KR100618698B1 (ko) * 2004-06-21 2006-09-08 주식회사 하이닉스반도체 반도체 소자 및 그의 제조방법
KR100702014B1 (ko) * 2005-05-03 2007-03-30 삼성전자주식회사 수직 채널 트랜지스터 구조를 갖는 단일 트랜지스터 플로팅바디 디램 소자들 및 그 제조방법들
JP4660324B2 (ja) * 2005-09-06 2011-03-30 株式会社東芝 Ｆｂｃメモリ装置
JP2007194259A (ja) * 2006-01-17 2007-08-02 Toshiba Corp 半導体装置及びその製造方法
KR100900232B1 (ko) 2007-05-22 2009-05-29 주식회사 하이닉스반도체 반도체 소자 및 그의 제조방법
JP2009117518A (ja) * 2007-11-05 2009-05-28 Toshiba Corp 半導体記憶装置およびその製造方法

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Publication number Publication date
JP2003017691A (ja) 2003-01-17

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