JP2003188287A5 - - Google Patents

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Publication number
JP2003188287A5
JP2003188287A5 JP2001383894A JP2001383894A JP2003188287A5 JP 2003188287 A5 JP2003188287 A5 JP 2003188287A5 JP 2001383894 A JP2001383894 A JP 2001383894A JP 2001383894 A JP2001383894 A JP 2001383894A JP 2003188287 A5 JP2003188287 A5 JP 2003188287A5
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JP
Japan
Prior art keywords
insulating film
source
gate
memory cell
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001383894A
Other languages
English (en)
Japanese (ja)
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JP2003188287A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2001383894A priority Critical patent/JP2003188287A/ja
Priority claimed from JP2001383894A external-priority patent/JP2003188287A/ja
Publication of JP2003188287A publication Critical patent/JP2003188287A/ja
Publication of JP2003188287A5 publication Critical patent/JP2003188287A5/ja
Pending legal-status Critical Current

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JP2001383894A 2001-12-18 2001-12-18 不揮発性半導体記憶装置及びその製造方法 Pending JP2003188287A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001383894A JP2003188287A (ja) 2001-12-18 2001-12-18 不揮発性半導体記憶装置及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001383894A JP2003188287A (ja) 2001-12-18 2001-12-18 不揮発性半導体記憶装置及びその製造方法

Publications (2)

Publication Number Publication Date
JP2003188287A JP2003188287A (ja) 2003-07-04
JP2003188287A5 true JP2003188287A5 (enExample) 2005-03-10

Family

ID=27593766

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001383894A Pending JP2003188287A (ja) 2001-12-18 2001-12-18 不揮発性半導体記憶装置及びその製造方法

Country Status (1)

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JP (1) JP2003188287A (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100549591B1 (ko) * 2003-11-05 2006-02-08 매그나칩 반도체 유한회사 비휘발성 메모리 소자 및 그의 제조 방법
US7154779B2 (en) * 2004-01-21 2006-12-26 Sandisk Corporation Non-volatile memory cell using high-k material inter-gate programming
US7355237B2 (en) * 2004-02-13 2008-04-08 Sandisk Corporation Shield plate for limiting cross coupling between floating gates
JP4664823B2 (ja) 2006-01-17 2011-04-06 株式会社東芝 不揮発性半導体記憶装置及びその製造方法。
JP4904881B2 (ja) * 2006-03-28 2012-03-28 富士電機株式会社 圧力検出装置および内燃機関の吸気通路
EP2064739A1 (en) * 2006-12-28 2009-06-03 Sandisk Corporation Methods of fabricating shield plates for reduced field coupling in nonvolatile memory
TWI859261B (zh) * 2019-07-05 2024-10-21 日商半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
CN114708899A (zh) * 2022-03-28 2022-07-05 长江存储科技有限责任公司 存储系统、三维存储器及其编程方法

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