JP2005079282A5 - - Google Patents
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- Publication number
- JP2005079282A5 JP2005079282A5 JP2003306789A JP2003306789A JP2005079282A5 JP 2005079282 A5 JP2005079282 A5 JP 2005079282A5 JP 2003306789 A JP2003306789 A JP 2003306789A JP 2003306789 A JP2003306789 A JP 2003306789A JP 2005079282 A5 JP2005079282 A5 JP 2005079282A5
- Authority
- JP
- Japan
- Prior art keywords
- region
- memory cells
- source
- insulating film
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002955 isolation Methods 0.000 claims 22
- 239000010410 layer Substances 0.000 claims 19
- 239000004065 semiconductor Substances 0.000 claims 17
- 239000002184 metal Substances 0.000 claims 15
- 239000000758 substrate Substances 0.000 claims 11
- 239000000463 material Substances 0.000 claims 7
- 239000002344 surface layer Substances 0.000 claims 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 4
- 238000009792 diffusion process Methods 0.000 claims 4
- 238000005530 etching Methods 0.000 claims 4
- 239000011229 interlayer Substances 0.000 claims 4
- 238000004519 manufacturing process Methods 0.000 claims 4
- 229910052710 silicon Inorganic materials 0.000 claims 4
- 239000010703 silicon Substances 0.000 claims 4
- 239000011159 matrix material Substances 0.000 claims 3
- 230000004888 barrier function Effects 0.000 claims 2
- 238000000059 patterning Methods 0.000 claims 1
- 229910021332 silicide Inorganic materials 0.000 claims 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003306789A JP4212432B2 (ja) | 2003-08-29 | 2003-08-29 | 不揮発性半導体記憶装置とその製造方法 |
| CNA2004100579805A CN1591677A (zh) | 2003-08-29 | 2004-08-27 | 非易失性半导体存储设备及其制造方法 |
| US10/927,324 US6989564B2 (en) | 2003-08-29 | 2004-08-27 | Nonvolatile semiconductor storage apparatus and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003306789A JP4212432B2 (ja) | 2003-08-29 | 2003-08-29 | 不揮発性半導体記憶装置とその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005079282A JP2005079282A (ja) | 2005-03-24 |
| JP2005079282A5 true JP2005079282A5 (enExample) | 2005-11-24 |
| JP4212432B2 JP4212432B2 (ja) | 2009-01-21 |
Family
ID=34409776
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003306789A Expired - Fee Related JP4212432B2 (ja) | 2003-08-29 | 2003-08-29 | 不揮発性半導体記憶装置とその製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US6989564B2 (enExample) |
| JP (1) | JP4212432B2 (enExample) |
| CN (1) | CN1591677A (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1686620A1 (en) * | 2005-01-28 | 2006-08-02 | STMicroelectronics S.r.l. | Process for manufacturing a memory with local electrical contact between the source line and the well |
| US7541240B2 (en) * | 2005-10-18 | 2009-06-02 | Sandisk Corporation | Integration process flow for flash devices with low gap fill aspect ratio |
| EP1786036A1 (en) * | 2005-11-11 | 2007-05-16 | STMicroelectronics S.r.l. | Floating gate non-volatile memory cell and process for manufacturing |
| JP4799148B2 (ja) | 2005-11-28 | 2011-10-26 | 株式会社東芝 | 不揮発性半導体記憶装置およびその製造方法 |
| CN100517723C (zh) * | 2006-01-23 | 2009-07-22 | 株式会社东芝 | 非易失性半导体存储器件 |
| US8237210B1 (en) * | 2006-02-08 | 2012-08-07 | Spansion Llc | Array type CAM cell for simplifying processes |
| US20090086548A1 (en) * | 2007-10-02 | 2009-04-02 | Eon Silicon Solution, Inc. | Flash memory |
| KR20100002708A (ko) * | 2008-06-30 | 2010-01-07 | 삼성전자주식회사 | 반도체 소자 및 그 형성 방법 |
| US10153203B2 (en) * | 2016-11-29 | 2018-12-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods for forming metal layers in openings and apparatus for forming same |
| US11145674B1 (en) * | 2020-04-07 | 2021-10-12 | Macronix International Co., Ltd. | 3D memory device and method of manufacturing the same |
| CN113097146B (zh) * | 2021-03-31 | 2022-06-17 | 长鑫存储技术有限公司 | 半导体结构的制备方法及半导体结构 |
| CN116261331B (zh) * | 2023-02-28 | 2025-07-22 | 广州粤芯半导体技术有限公司 | 闪存器件及其制作方法、电子设备 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000269467A (ja) | 1999-03-16 | 2000-09-29 | Toshiba Corp | 半導体集積回路装置 |
| JP3679970B2 (ja) * | 2000-03-28 | 2005-08-03 | 株式会社東芝 | 不揮発性半導体記憶装置及びその製造方法 |
-
2003
- 2003-08-29 JP JP2003306789A patent/JP4212432B2/ja not_active Expired - Fee Related
-
2004
- 2004-08-27 CN CNA2004100579805A patent/CN1591677A/zh active Pending
- 2004-08-27 US US10/927,324 patent/US6989564B2/en not_active Expired - Fee Related
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