CN1591677A - 非易失性半导体存储设备及其制造方法 - Google Patents

非易失性半导体存储设备及其制造方法 Download PDF

Info

Publication number
CN1591677A
CN1591677A CNA2004100579805A CN200410057980A CN1591677A CN 1591677 A CN1591677 A CN 1591677A CN A2004100579805 A CNA2004100579805 A CN A2004100579805A CN 200410057980 A CN200410057980 A CN 200410057980A CN 1591677 A CN1591677 A CN 1591677A
Authority
CN
China
Prior art keywords
region
element isolation
memory cells
local source
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2004100579805A
Other languages
English (en)
Chinese (zh)
Inventor
坂上荣人
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of CN1591677A publication Critical patent/CN1591677A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/42—Simultaneous manufacture of periphery and memory cells
    • H10B41/49—Simultaneous manufacture of periphery and memory cells comprising different types of peripheral transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Element Separation (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CNA2004100579805A 2003-08-29 2004-08-27 非易失性半导体存储设备及其制造方法 Pending CN1591677A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP306789/2003 2003-08-29
JP2003306789A JP4212432B2 (ja) 2003-08-29 2003-08-29 不揮発性半導体記憶装置とその製造方法

Publications (1)

Publication Number Publication Date
CN1591677A true CN1591677A (zh) 2005-03-09

Family

ID=34409776

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2004100579805A Pending CN1591677A (zh) 2003-08-29 2004-08-27 非易失性半导体存储设备及其制造方法

Country Status (3)

Country Link
US (1) US6989564B2 (enExample)
JP (1) JP4212432B2 (enExample)
CN (1) CN1591677A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100517723C (zh) * 2006-01-23 2009-07-22 株式会社东芝 非易失性半导体存储器件
CN101621078A (zh) * 2008-06-30 2010-01-06 三星电子株式会社 具有多层隧道绝缘体的存储器单元晶体管及存储器器件
CN113497054A (zh) * 2020-04-07 2021-10-12 旺宏电子股份有限公司 立体存储器装置及其制造方法

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1686620A1 (en) * 2005-01-28 2006-08-02 STMicroelectronics S.r.l. Process for manufacturing a memory with local electrical contact between the source line and the well
US7541240B2 (en) * 2005-10-18 2009-06-02 Sandisk Corporation Integration process flow for flash devices with low gap fill aspect ratio
EP1786036A1 (en) * 2005-11-11 2007-05-16 STMicroelectronics S.r.l. Floating gate non-volatile memory cell and process for manufacturing
JP4799148B2 (ja) 2005-11-28 2011-10-26 株式会社東芝 不揮発性半導体記憶装置およびその製造方法
US8237210B1 (en) * 2006-02-08 2012-08-07 Spansion Llc Array type CAM cell for simplifying processes
US20090086548A1 (en) * 2007-10-02 2009-04-02 Eon Silicon Solution, Inc. Flash memory
US10153203B2 (en) * 2016-11-29 2018-12-11 Taiwan Semiconductor Manufacturing Company, Ltd. Methods for forming metal layers in openings and apparatus for forming same
CN113097146B (zh) * 2021-03-31 2022-06-17 长鑫存储技术有限公司 半导体结构的制备方法及半导体结构
CN116261331B (zh) * 2023-02-28 2025-07-22 广州粤芯半导体技术有限公司 闪存器件及其制作方法、电子设备

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000269467A (ja) 1999-03-16 2000-09-29 Toshiba Corp 半導体集積回路装置
JP3679970B2 (ja) * 2000-03-28 2005-08-03 株式会社東芝 不揮発性半導体記憶装置及びその製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100517723C (zh) * 2006-01-23 2009-07-22 株式会社东芝 非易失性半导体存储器件
CN101621078A (zh) * 2008-06-30 2010-01-06 三星电子株式会社 具有多层隧道绝缘体的存储器单元晶体管及存储器器件
CN113497054A (zh) * 2020-04-07 2021-10-12 旺宏电子股份有限公司 立体存储器装置及其制造方法

Also Published As

Publication number Publication date
JP4212432B2 (ja) 2009-01-21
JP2005079282A (ja) 2005-03-24
US20050083750A1 (en) 2005-04-21
US6989564B2 (en) 2006-01-24

Similar Documents

Publication Publication Date Title
CN1181552C (zh) 半导体装置及其制造方法
CN100350622C (zh) 借助晶体管从光电二极管读取信号的半导体器件
CN1190853C (zh) 半导体器件
CN1622311A (zh) 半导体器件的制造方法及半导体器件
CN1739198A (zh) 半导体装置及其制造方法以及摄像装置
CN1152433C (zh) 半导体器件及其制造方法
CN1139129C (zh) 半导体集成电路器件及其制造方法
CN1205664C (zh) 半导体装置及其制造方法
CN1230904C (zh) 非易失性半导体存储器
CN1252832C (zh) 半导体器件及其制造方法
CN1292483C (zh) 半导体器件及其制造方法
CN1552100A (zh) 半导体装置、半导体装置的制造方法及其电子设备
CN101051652A (zh) 半导体器件及其制造方法
CN1043389C (zh) 包括存储器件的半导体集成电路器件及其制造方法
CN1992298A (zh) 半导体成像器件
CN1514485A (zh) 非挥发性内存及其制造方法
CN1645515A (zh) 非易失性半导体存储器
CN101043032A (zh) 半导体器件及其制造方法
CN1171314C (zh) 半导体装置及半导体装置的制造方法
CN1320661C (zh) 半导体器件及其制造方法
CN1669149A (zh) 图像传感器以及图像传感器模块
CN1591677A (zh) 非易失性半导体存储设备及其制造方法
CN1674285A (zh) 非易失性半导体存储器及其制造方法
CN1471171A (zh) 半导体器件
CN1240133C (zh) 半导体器件及其制造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
AD01 Patent right deemed abandoned

Effective date of abandoning: 20050309

C20 Patent right or utility model deemed to be abandoned or is abandoned