CN1230904C - 非易失性半导体存储器 - Google Patents
非易失性半导体存储器 Download PDFInfo
- Publication number
- CN1230904C CN1230904C CNB011436719A CN01143671A CN1230904C CN 1230904 C CN1230904 C CN 1230904C CN B011436719 A CNB011436719 A CN B011436719A CN 01143671 A CN01143671 A CN 01143671A CN 1230904 C CN1230904 C CN 1230904C
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- CN
- China
- Prior art keywords
- mentioned
- nonvolatile semiconductor
- semiconductor memory
- word line
- gate electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 257
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- 238000000034 method Methods 0.000 description 43
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 38
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 35
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 34
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- 229910021342 tungsten silicide Inorganic materials 0.000 description 6
- 238000013459 approach Methods 0.000 description 5
- 229910017052 cobalt Inorganic materials 0.000 description 5
- 239000010941 cobalt Substances 0.000 description 5
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 5
- 238000010276 construction Methods 0.000 description 5
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- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 101001016600 Equus caballus Sperm histone P2b Proteins 0.000 description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000007800 oxidant agent Substances 0.000 description 4
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 description 4
- 150000003377 silicon compounds Chemical group 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical compound [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 description 3
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- 101000592939 Bacillus subtilis (strain 168) 50S ribosomal protein L24 Proteins 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 101001106523 Homo sapiens Regulator of G-protein signaling 1 Proteins 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 102100021269 Regulator of G-protein signaling 1 Human genes 0.000 description 2
- 239000003570 air Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 125000001153 fluoro group Chemical group F* 0.000 description 2
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000002784 hot electron Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 2
- 229910021334 nickel silicide Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000003949 trap density measurement Methods 0.000 description 2
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000003064 anti-oxidating effect Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
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- 238000013461 design Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
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- 150000002500 ions Chemical class 0.000 description 1
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- 238000012544 monitoring process Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
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- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
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- 230000009467 reduction Effects 0.000 description 1
- 230000001932 seasonal effect Effects 0.000 description 1
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- 230000001360 synchronised effect Effects 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
- G11C16/0475—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS] comprising two or more independent storage sites which store independent data
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Read Only Memory (AREA)
- Element Separation (AREA)
Abstract
Description
Claims (12)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP112520/01 | 2001-04-11 | ||
JP2001112520A JP4565767B2 (ja) | 2001-04-11 | 2001-04-11 | 不揮発性半導体記憶装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1380697A CN1380697A (zh) | 2002-11-20 |
CN1230904C true CN1230904C (zh) | 2005-12-07 |
Family
ID=18963922
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB011436719A Expired - Fee Related CN1230904C (zh) | 2001-04-11 | 2001-12-17 | 非易失性半导体存储器 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6545893B2 (zh) |
JP (1) | JP4565767B2 (zh) |
KR (1) | KR100416897B1 (zh) |
CN (1) | CN1230904C (zh) |
DE (1) | DE10155416A1 (zh) |
TW (1) | TW519729B (zh) |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050056921A1 (en) * | 2003-09-15 | 2005-03-17 | Staktek Group L.P. | Stacked module systems and methods |
JP2004349474A (ja) * | 2003-05-22 | 2004-12-09 | Toshiba Corp | 半導体装置とその製造方法 |
DE10324052B4 (de) * | 2003-05-27 | 2007-06-28 | Infineon Technologies Ag | Verfahren zur Herstellung eines Halbleiterspeichers mit Charge-Trapping-Speicherzellen |
JP2005026641A (ja) * | 2003-07-04 | 2005-01-27 | Nec Electronics Corp | 半導体装置およびその製造方法 |
DE10332095B3 (de) * | 2003-07-15 | 2005-01-20 | Infineon Technologies Ag | Halbleiterspeicher mit Charge-trapping-Speicherzellen |
US7212435B2 (en) * | 2004-06-30 | 2007-05-01 | Micron Technology, Inc. | Minimizing adjacent wordline disturb in a memory device |
JP4947931B2 (ja) | 2004-08-12 | 2012-06-06 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US7303964B2 (en) * | 2005-04-25 | 2007-12-04 | Spansion Llc | Self-aligned STI SONOS |
US20070141788A1 (en) * | 2005-05-25 | 2007-06-21 | Ilan Bloom | Method for embedding non-volatile memory with logic circuitry |
JP2007005699A (ja) * | 2005-06-27 | 2007-01-11 | Matsushita Electric Ind Co Ltd | 不揮発性半導体記憶装置及びその製造方法 |
US7538384B2 (en) * | 2005-12-05 | 2009-05-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Non-volatile memory array structure |
JP2007207380A (ja) * | 2006-02-03 | 2007-08-16 | Renesas Technology Corp | 不揮発性半導体記憶装置 |
US7408810B2 (en) * | 2006-02-22 | 2008-08-05 | Micron Technology, Inc. | Minimizing effects of program disturb in a memory device |
US7561469B2 (en) * | 2006-03-28 | 2009-07-14 | Micron Technology, Inc. | Programming method to reduce word line to word line breakdown for NAND flash |
US7440321B2 (en) * | 2006-04-12 | 2008-10-21 | Micron Technology, Inc. | Multiple select gate architecture with select gates of different lengths |
KR100734317B1 (ko) * | 2006-05-16 | 2007-07-02 | 삼성전자주식회사 | 2-비트 동작을 위한 비휘발성 메모리 소자 및 그 제조 방법 |
KR100739532B1 (ko) | 2006-06-09 | 2007-07-13 | 삼성전자주식회사 | 매몰 비트라인 형성 방법 |
US7471565B2 (en) | 2006-08-22 | 2008-12-30 | Micron Technology, Inc. | Reducing effects of program disturb in a memory device |
JP5281770B2 (ja) * | 2007-08-17 | 2013-09-04 | スパンション エルエルシー | 半導体装置およびその製造方法 |
US7733705B2 (en) | 2008-03-13 | 2010-06-08 | Micron Technology, Inc. | Reduction of punch-through disturb during programming of a memory device |
US8551858B2 (en) * | 2010-02-03 | 2013-10-08 | Spansion Llc | Self-aligned SI rich nitride charge trap layer isolation for charge trap flash memory |
US10734320B2 (en) | 2018-07-30 | 2020-08-04 | Infineon Technologies Austria Ag | Power metallization structure for semiconductor devices |
KR20150139255A (ko) | 2014-06-03 | 2015-12-11 | 에스케이하이닉스 주식회사 | 반도체 장치 및 그 제조방법 |
DE102016122318A1 (de) | 2016-11-21 | 2018-05-24 | Infineon Technologies Ag | Anschlussstruktur eines Leistungshalbleiterbauelements |
US10304782B2 (en) * | 2017-08-25 | 2019-05-28 | Infineon Technologies Ag | Compressive interlayer having a defined crack-stop edge extension |
US11127693B2 (en) * | 2017-08-25 | 2021-09-21 | Infineon Technologies Ag | Barrier for power metallization in semiconductor devices |
KR102471157B1 (ko) * | 2017-11-09 | 2022-11-25 | 삼성전자주식회사 | 메모리 소자 |
US10388362B1 (en) * | 2018-05-08 | 2019-08-20 | Micron Technology, Inc. | Half-width, double pumped data path |
US11031321B2 (en) | 2019-03-15 | 2021-06-08 | Infineon Technologies Ag | Semiconductor device having a die pad with a dam-like configuration |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0287677A (ja) * | 1988-09-26 | 1990-03-28 | Nec Corp | 不揮発性mos半導体記憶装置 |
JP2825135B2 (ja) * | 1990-03-06 | 1998-11-18 | 富士通株式会社 | 半導体記憶装置及びその情報書込読出消去方法 |
JP3090739B2 (ja) * | 1991-10-31 | 2000-09-25 | ローム株式会社 | 不揮発性半導体記憶素子の製造方法 |
JPH06125064A (ja) * | 1992-10-09 | 1994-05-06 | Rohm Co Ltd | 不揮発性記憶装置およびその駆動方法 |
JPH0793984A (ja) * | 1993-09-20 | 1995-04-07 | Fujitsu Ltd | 半導体記憶装置 |
JPH07147389A (ja) * | 1993-11-24 | 1995-06-06 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
JP3445660B2 (ja) * | 1994-07-08 | 2003-09-08 | 新日本製鐵株式会社 | 不揮発性半導体記憶装置及びその製造方法 |
JPH0878542A (ja) * | 1994-08-31 | 1996-03-22 | Toshiba Corp | 不揮発性半導体装置 |
JP3465397B2 (ja) * | 1995-01-26 | 2003-11-10 | ソニー株式会社 | 半導体不揮発性メモリ装置 |
US5900661A (en) * | 1996-09-18 | 1999-05-04 | Nippon Steel Corporation | EEPROM with bit lines below word lines |
JP3760022B2 (ja) * | 1997-05-13 | 2006-03-29 | 株式会社日立製作所 | 半導体記憶装置 |
JPH11195718A (ja) | 1997-10-31 | 1999-07-21 | Sony Corp | 不揮発性半導体記憶装置と、その製造方法及びその駆動方法 |
US6316801B1 (en) * | 1998-03-04 | 2001-11-13 | Nec Corporation | Semiconductor device having capacitive element structure and multilevel interconnection structure and method of fabricating the same |
JPH11261037A (ja) * | 1998-03-10 | 1999-09-24 | Nippon Steel Corp | 半導体装置及びその製造方法並びに記憶媒体 |
JP3279263B2 (ja) * | 1998-09-04 | 2002-04-30 | 日本電気株式会社 | 不揮発性半導体記憶装置の製造方法 |
JP3743189B2 (ja) * | 1999-01-27 | 2006-02-08 | 富士通株式会社 | 不揮発性半導体記憶装置及びその製造方法 |
-
2001
- 2001-04-11 JP JP2001112520A patent/JP4565767B2/ja not_active Expired - Fee Related
- 2001-09-24 US US09/960,335 patent/US6545893B2/en not_active Expired - Lifetime
- 2001-09-29 KR KR10-2001-0061007A patent/KR100416897B1/ko not_active IP Right Cessation
- 2001-11-12 DE DE10155416A patent/DE10155416A1/de not_active Ceased
- 2001-12-13 TW TW090130891A patent/TW519729B/zh not_active IP Right Cessation
- 2001-12-17 CN CNB011436719A patent/CN1230904C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US6545893B2 (en) | 2003-04-08 |
JP2002313962A (ja) | 2002-10-25 |
TW519729B (en) | 2003-02-01 |
CN1380697A (zh) | 2002-11-20 |
JP4565767B2 (ja) | 2010-10-20 |
KR20020080228A (ko) | 2002-10-23 |
DE10155416A1 (de) | 2002-10-24 |
US20020149958A1 (en) | 2002-10-17 |
KR100416897B1 (ko) | 2004-02-05 |
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