CN1320661C - 半导体器件及其制造方法 - Google Patents
半导体器件及其制造方法 Download PDFInfo
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- CN1320661C CN1320661C CNB2003101232173A CN200310123217A CN1320661C CN 1320661 C CN1320661 C CN 1320661C CN B2003101232173 A CNB2003101232173 A CN B2003101232173A CN 200310123217 A CN200310123217 A CN 200310123217A CN 1320661 C CN1320661 C CN 1320661C
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 211
- 238000004519 manufacturing process Methods 0.000 title abstract description 17
- 239000012535 impurity Substances 0.000 claims abstract description 110
- 238000000034 method Methods 0.000 claims abstract description 73
- 238000009792 diffusion process Methods 0.000 claims description 100
- 239000002019 doping agent Substances 0.000 claims description 46
- 239000002800 charge carrier Substances 0.000 claims description 19
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 238000009413 insulation Methods 0.000 abstract description 3
- 239000000758 substrate Substances 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 72
- 229920002120 photoresistant polymer Polymers 0.000 description 41
- 239000011229 interlayer Substances 0.000 description 23
- 229910052751 metal Inorganic materials 0.000 description 18
- 239000002184 metal Substances 0.000 description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 17
- 229910052814 silicon oxide Inorganic materials 0.000 description 17
- 238000002347 injection Methods 0.000 description 16
- 239000007924 injection Substances 0.000 description 16
- 230000004888 barrier function Effects 0.000 description 15
- 150000002500 ions Chemical class 0.000 description 15
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 15
- 229920005591 polysilicon Polymers 0.000 description 15
- 238000004528 spin coating Methods 0.000 description 12
- 239000000463 material Substances 0.000 description 10
- 229910052698 phosphorus Inorganic materials 0.000 description 10
- 239000011574 phosphorus Substances 0.000 description 10
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 9
- 230000001133 acceleration Effects 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 238000009825 accumulation Methods 0.000 description 5
- 229910052785 arsenic Inorganic materials 0.000 description 5
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 230000036039 immunity Effects 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 150000003017 phosphorus Chemical class 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/60—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the control gate being a doped region, e.g. single-poly memory cell
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (15)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP369463/2002 | 2002-12-20 | ||
JP2002369463A JP2004200553A (ja) | 2002-12-20 | 2002-12-20 | 半導体装置及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1510763A CN1510763A (zh) | 2004-07-07 |
CN1320661C true CN1320661C (zh) | 2007-06-06 |
Family
ID=32677139
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2003101232173A Expired - Fee Related CN1320661C (zh) | 2002-12-20 | 2003-12-19 | 半导体器件及其制造方法 |
Country Status (4)
Country | Link |
---|---|
US (2) | US6977411B2 (zh) |
JP (1) | JP2004200553A (zh) |
CN (1) | CN1320661C (zh) |
TW (1) | TWI229944B (zh) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7750446B2 (en) * | 2002-04-29 | 2010-07-06 | Interconnect Portfolio Llc | IC package structures having separate circuit interconnection structures and assemblies constructed thereof |
JP2004200553A (ja) * | 2002-12-20 | 2004-07-15 | Fujitsu Ltd | 半導体装置及びその製造方法 |
JP2006196758A (ja) * | 2005-01-14 | 2006-07-27 | Renesas Technology Corp | 半導体装置 |
JP2006344735A (ja) * | 2005-06-08 | 2006-12-21 | Seiko Epson Corp | 半導体装置 |
US7633115B2 (en) * | 2006-10-17 | 2009-12-15 | Allegro Microsystems, Inc. | Electrically erasable programmable read only memory (EEPROM) cell |
CN102237367B (zh) * | 2010-05-07 | 2014-09-24 | 中国科学院微电子研究所 | 一种闪存器件及其制造方法 |
TWI445051B (zh) * | 2011-06-28 | 2014-07-11 | Univ Nat Chiao Tung | 半導體裝置及其操作方法與應用電路 |
US8941167B2 (en) | 2012-03-08 | 2015-01-27 | Ememory Technology Inc. | Erasable programmable single-ploy nonvolatile memory |
US8779520B2 (en) | 2012-03-08 | 2014-07-15 | Ememory Technology Inc. | Erasable programmable single-ploy nonvolatile memory |
JP2013187534A (ja) * | 2012-03-08 | 2013-09-19 | Ememory Technology Inc | 消去可能プログラマブル単一ポリ不揮発性メモリ |
US8658495B2 (en) | 2012-03-08 | 2014-02-25 | Ememory Technology Inc. | Method of fabricating erasable programmable single-poly nonvolatile memory |
JP2013201185A (ja) * | 2012-03-23 | 2013-10-03 | Toshiba Corp | 不揮発性半導体記憶装置およびその製造方法 |
US9117832B2 (en) * | 2012-06-05 | 2015-08-25 | Phison Electronics Corp. | Semiconductor device with physical manipulation detector and corrector |
US8772108B1 (en) * | 2013-02-25 | 2014-07-08 | Globalfoundries Singapore Pte. Ltd. | Multi-time programmable non-volatile memory |
US9711516B2 (en) * | 2015-10-30 | 2017-07-18 | Taiwan Semiconductor Manufacturing Company Ltd. | Non-volatile memory having a gate-layered triple well structure |
JP2021044519A (ja) * | 2019-09-13 | 2021-03-18 | キオクシア株式会社 | 半導体装置 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0555602A (ja) * | 1991-08-28 | 1993-03-05 | Hitachi Ltd | 半導体集積回路装置 |
TW285777B (en) * | 1995-11-21 | 1996-09-11 | Programmable Microelectronics | PMOS flash EEPROM cell with single poly |
CN1177211A (zh) * | 1996-05-30 | 1998-03-25 | 现代电子美国公司 | 三阱快速存储单元及其制造方法 |
JPH10223782A (ja) * | 1997-02-06 | 1998-08-21 | Toshiba Corp | 不揮発性半導体記憶装置およびその製造方法 |
TW363229B (en) * | 1996-10-31 | 1999-07-01 | Chingis Technology Corp | PMOS single-poly non-volatile memory structure |
US6017792A (en) * | 1994-09-06 | 2000-01-25 | Motorola, Inc. | Process for fabricating a semiconductor device including a nonvolatile memory cell |
US6054732A (en) * | 1997-02-11 | 2000-04-25 | Texas Instruments Incorporated | Single polysilicon flash EEPROM with low positive programming and erasing voltage and small cell size |
US6410389B1 (en) * | 1999-10-07 | 2002-06-25 | Stmicroelectronics S.R.L. | Non-volatile memory cell with a single level of polysilicon, in particular of the flash EEPROM type, and method for manufacturing the same |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4608585A (en) * | 1982-07-30 | 1986-08-26 | Signetics Corporation | Electrically erasable PROM cell |
JPH088314B2 (ja) | 1989-10-11 | 1996-01-29 | 株式会社東芝 | 不揮発性半導体記憶装置およびその製造方法 |
JP2663863B2 (ja) * | 1994-04-19 | 1997-10-15 | 日本電気株式会社 | 不揮発性半導体記憶装置 |
JPH08321562A (ja) | 1995-05-25 | 1996-12-03 | Sanyo Electric Co Ltd | 半導体装置、不揮発性半導体記憶装置、不揮発性半導体記憶装置の製造方法 |
ATE196036T1 (de) | 1995-11-21 | 2000-09-15 | Programmable Microelectronics | Nichtflüchtige pmos-speicheranordnung mit einer einzigen polysiliziumschicht |
DE69624107T2 (de) | 1996-07-18 | 2003-06-05 | Stmicroelectronics S.R.L., Agrate Brianza | Flash-EEPROM-Zelle mit einziger Polysiliziumschicht und Verfahren zur Herstellung |
EP1091408A1 (en) * | 1999-10-07 | 2001-04-11 | STMicroelectronics S.r.l. | Non-volatile memory cell with a single level of polysilicon |
JP2001319981A (ja) | 2000-05-10 | 2001-11-16 | Seiko Instruments Inc | 半導体不揮発性メモリとその製造方法 |
JP4079580B2 (ja) | 2000-06-28 | 2008-04-23 | エルピーダメモリ株式会社 | 半導体集積回路 |
JP2004200553A (ja) * | 2002-12-20 | 2004-07-15 | Fujitsu Ltd | 半導体装置及びその製造方法 |
-
2002
- 2002-12-20 JP JP2002369463A patent/JP2004200553A/ja active Pending
-
2003
- 2003-12-16 TW TW092135642A patent/TWI229944B/zh not_active IP Right Cessation
- 2003-12-18 US US10/738,025 patent/US6977411B2/en not_active Expired - Lifetime
- 2003-12-19 CN CNB2003101232173A patent/CN1320661C/zh not_active Expired - Fee Related
-
2005
- 2005-10-13 US US11/248,137 patent/US7452771B2/en not_active Expired - Fee Related
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0555602A (ja) * | 1991-08-28 | 1993-03-05 | Hitachi Ltd | 半導体集積回路装置 |
US6017792A (en) * | 1994-09-06 | 2000-01-25 | Motorola, Inc. | Process for fabricating a semiconductor device including a nonvolatile memory cell |
TW285777B (en) * | 1995-11-21 | 1996-09-11 | Programmable Microelectronics | PMOS flash EEPROM cell with single poly |
CN1177211A (zh) * | 1996-05-30 | 1998-03-25 | 现代电子美国公司 | 三阱快速存储单元及其制造方法 |
TW363229B (en) * | 1996-10-31 | 1999-07-01 | Chingis Technology Corp | PMOS single-poly non-volatile memory structure |
JPH10223782A (ja) * | 1997-02-06 | 1998-08-21 | Toshiba Corp | 不揮発性半導体記憶装置およびその製造方法 |
US6054732A (en) * | 1997-02-11 | 2000-04-25 | Texas Instruments Incorporated | Single polysilicon flash EEPROM with low positive programming and erasing voltage and small cell size |
US6410389B1 (en) * | 1999-10-07 | 2002-06-25 | Stmicroelectronics S.R.L. | Non-volatile memory cell with a single level of polysilicon, in particular of the flash EEPROM type, and method for manufacturing the same |
Also Published As
Publication number | Publication date |
---|---|
JP2004200553A (ja) | 2004-07-15 |
US7452771B2 (en) | 2008-11-18 |
CN1510763A (zh) | 2004-07-07 |
US20040129970A1 (en) | 2004-07-08 |
TWI229944B (en) | 2005-03-21 |
TW200415794A (en) | 2004-08-16 |
US6977411B2 (en) | 2005-12-20 |
US20060046373A1 (en) | 2006-03-02 |
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Effective date of registration: 20081219 Address after: Tokyo, Japan Patentee after: Fujitsu Microelectronics Ltd. Address before: Kanagawa, Japan Patentee before: Fujitsu Ltd. |
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Owner name: FUJITSU MICROELECTRONICS CO., LTD. Free format text: FORMER OWNER: FUJITSU LIMITED Effective date: 20081219 |
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Address after: Kanagawa Patentee after: FUJITSU MICROELECTRONICS Ltd. Address before: Kanagawa Patentee before: Fujitsu Microelectronics Ltd. |
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CP02 | Change in the address of a patent holder |
Address after: Kanagawa Patentee after: Fujitsu Microelectronics Ltd. Address before: Tokyo, Japan Patentee before: Fujitsu Microelectronics Ltd. |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20070606 Termination date: 20191219 |
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