CN1152433C - 半导体器件及其制造方法 - Google Patents
半导体器件及其制造方法 Download PDFInfo
- Publication number
- CN1152433C CN1152433C CNB981001939A CN98100193A CN1152433C CN 1152433 C CN1152433 C CN 1152433C CN B981001939 A CNB981001939 A CN B981001939A CN 98100193 A CN98100193 A CN 98100193A CN 1152433 C CN1152433 C CN 1152433C
- Authority
- CN
- China
- Prior art keywords
- electrode
- capacitor
- electric charge
- active area
- gate electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 73
- 238000000034 method Methods 0.000 title claims description 34
- 238000004519 manufacturing process Methods 0.000 title claims description 27
- 239000003990 capacitor Substances 0.000 claims description 80
- 230000003647 oxidation Effects 0.000 claims description 27
- 238000007254 oxidation reaction Methods 0.000 claims description 27
- 238000012423 maintenance Methods 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 24
- 230000015572 biosynthetic process Effects 0.000 claims description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 17
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 17
- 230000012010 growth Effects 0.000 claims description 16
- 238000009413 insulation Methods 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 239000004020 conductor Substances 0.000 claims description 9
- 230000004888 barrier function Effects 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 229910021332 silicide Inorganic materials 0.000 claims description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 4
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 62
- 238000009792 diffusion process Methods 0.000 description 41
- 238000002955 isolation Methods 0.000 description 23
- 229920002120 photoresistant polymer Polymers 0.000 description 18
- 238000005755 formation reaction Methods 0.000 description 16
- 238000005530 etching Methods 0.000 description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 239000011229 interlayer Substances 0.000 description 8
- 238000001259 photo etching Methods 0.000 description 8
- 230000002093 peripheral effect Effects 0.000 description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 5
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000001947 vapour-phase growth Methods 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000011982 device technology Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910021341 titanium silicide Inorganic materials 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- AOQZCUVGSOYNCB-UHFFFAOYSA-N [B].[Si]=O Chemical compound [B].[Si]=O AOQZCUVGSOYNCB-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000003682 fluorination reaction Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (8)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP040101/97 | 1997-02-07 | ||
JP040101/1997 | 1997-02-07 | ||
JP04010197A JP3161354B2 (ja) | 1997-02-07 | 1997-02-07 | 半導体装置及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1190263A CN1190263A (zh) | 1998-08-12 |
CN1152433C true CN1152433C (zh) | 2004-06-02 |
Family
ID=12571483
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB981001939A Expired - Fee Related CN1152433C (zh) | 1997-02-07 | 1998-02-06 | 半导体器件及其制造方法 |
Country Status (7)
Country | Link |
---|---|
US (2) | US6225657B1 (zh) |
EP (1) | EP0858109B1 (zh) |
JP (1) | JP3161354B2 (zh) |
KR (1) | KR100306409B1 (zh) |
CN (1) | CN1152433C (zh) |
DE (1) | DE69835780T2 (zh) |
TW (1) | TW442922B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101443902B (zh) * | 2006-04-13 | 2011-06-08 | 美光科技公司 | 用于在形成快闪存储器装置期间形成位线触点及位线的方法,及包括所述位线及位线触点的装置 |
Families Citing this family (51)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6211544B1 (en) * | 1999-03-18 | 2001-04-03 | Infineon Technologies North America Corp. | Memory cell layout for reduced interaction between storage nodes and transistors |
US6713378B2 (en) * | 2000-06-16 | 2004-03-30 | Micron Technology, Inc. | Interconnect line selectively isolated from an underlying contact plug |
TWI230392B (en) | 2001-06-18 | 2005-04-01 | Innovative Silicon Sa | Semiconductor device |
US20040228168A1 (en) | 2003-05-13 | 2004-11-18 | Richard Ferrant | Semiconductor memory device and method of operating same |
US7335934B2 (en) | 2003-07-22 | 2008-02-26 | Innovative Silicon S.A. | Integrated circuit device, and method of fabricating same |
JP4044525B2 (ja) | 2004-01-07 | 2008-02-06 | 株式会社東芝 | 半導体記憶装置およびその製造方法 |
DE102004003084B3 (de) * | 2004-01-21 | 2005-10-06 | Infineon Technologies Ag | Halbleiterspeicherzelle sowie zugehöriges Herstellungsverfahren |
US7606066B2 (en) | 2005-09-07 | 2009-10-20 | Innovative Silicon Isi Sa | Memory cell and memory cell array having an electrically floating body transistor, and methods of operating same |
US7683430B2 (en) | 2005-12-19 | 2010-03-23 | Innovative Silicon Isi Sa | Electrically floating body memory cell and array, and method of operating or controlling same |
US7492632B2 (en) | 2006-04-07 | 2009-02-17 | Innovative Silicon Isi Sa | Memory array having a programmable word length, and method of operating same |
WO2007128738A1 (en) | 2006-05-02 | 2007-11-15 | Innovative Silicon Sa | Semiconductor memory cell and array using punch-through to program and read same |
US8069377B2 (en) | 2006-06-26 | 2011-11-29 | Micron Technology, Inc. | Integrated circuit having memory array including ECC and column redundancy and method of operating the same |
US7542340B2 (en) | 2006-07-11 | 2009-06-02 | Innovative Silicon Isi Sa | Integrated circuit including memory array having a segmented bit line architecture and method of controlling and/or operating same |
KR101277402B1 (ko) | 2007-01-26 | 2013-06-20 | 마이크론 테크놀로지, 인코포레이티드 | 게이트형 바디 영역으로부터 격리되는 소스/드레인 영역을 포함하는 플로팅-바디 dram 트랜지스터 |
KR100891329B1 (ko) * | 2007-01-26 | 2009-03-31 | 삼성전자주식회사 | 반도체 소자 및 그 제조 방법 |
WO2009031052A2 (en) | 2007-03-29 | 2009-03-12 | Innovative Silicon S.A. | Zero-capacitor (floating body) random access memory circuits with polycide word lines and manufacturing methods therefor |
US8064274B2 (en) | 2007-05-30 | 2011-11-22 | Micron Technology, Inc. | Integrated circuit having voltage generation circuitry for memory cell array, and method of operating and/or controlling same |
US8085594B2 (en) | 2007-06-01 | 2011-12-27 | Micron Technology, Inc. | Reading technique for memory cell with electrically floating body transistor |
US7816762B2 (en) * | 2007-08-07 | 2010-10-19 | International Business Machines Corporation | On-chip decoupling capacitor structures |
WO2009039169A1 (en) | 2007-09-17 | 2009-03-26 | Innovative Silicon S.A. | Refreshing data of memory cells with electrically floating body transistors |
US8536628B2 (en) | 2007-11-29 | 2013-09-17 | Micron Technology, Inc. | Integrated circuit having memory cell array including barriers, and method of manufacturing same |
US8349662B2 (en) | 2007-12-11 | 2013-01-08 | Micron Technology, Inc. | Integrated circuit having memory cell array, and method of manufacturing same |
US8773933B2 (en) | 2012-03-16 | 2014-07-08 | Micron Technology, Inc. | Techniques for accessing memory cells |
US8014195B2 (en) | 2008-02-06 | 2011-09-06 | Micron Technology, Inc. | Single transistor memory cell |
US8189376B2 (en) | 2008-02-08 | 2012-05-29 | Micron Technology, Inc. | Integrated circuit having memory cells including gate material having high work function, and method of manufacturing same |
US7957206B2 (en) | 2008-04-04 | 2011-06-07 | Micron Technology, Inc. | Read circuitry for an integrated circuit having memory cells and/or a memory cell array, and method of operating same |
US7947543B2 (en) | 2008-09-25 | 2011-05-24 | Micron Technology, Inc. | Recessed gate silicon-on-insulator floating body device with self-aligned lateral isolation |
US7933140B2 (en) | 2008-10-02 | 2011-04-26 | Micron Technology, Inc. | Techniques for reducing a voltage swing |
US7924630B2 (en) | 2008-10-15 | 2011-04-12 | Micron Technology, Inc. | Techniques for simultaneously driving a plurality of source lines |
US8223574B2 (en) | 2008-11-05 | 2012-07-17 | Micron Technology, Inc. | Techniques for block refreshing a semiconductor memory device |
US8213226B2 (en) | 2008-12-05 | 2012-07-03 | Micron Technology, Inc. | Vertical transistor memory cell and array |
US8319294B2 (en) | 2009-02-18 | 2012-11-27 | Micron Technology, Inc. | Techniques for providing a source line plane |
US8710566B2 (en) | 2009-03-04 | 2014-04-29 | Micron Technology, Inc. | Techniques for forming a contact to a buried diffusion layer in a semiconductor memory device |
WO2010114890A1 (en) | 2009-03-31 | 2010-10-07 | Innovative Silicon Isi Sa | Techniques for providing a semiconductor memory device |
US8139418B2 (en) | 2009-04-27 | 2012-03-20 | Micron Technology, Inc. | Techniques for controlling a direct injection semiconductor memory device |
US8508994B2 (en) | 2009-04-30 | 2013-08-13 | Micron Technology, Inc. | Semiconductor device with floating gate and electrically floating body |
US8498157B2 (en) | 2009-05-22 | 2013-07-30 | Micron Technology, Inc. | Techniques for providing a direct injection semiconductor memory device |
US8537610B2 (en) | 2009-07-10 | 2013-09-17 | Micron Technology, Inc. | Techniques for providing a semiconductor memory device |
US9076543B2 (en) | 2009-07-27 | 2015-07-07 | Micron Technology, Inc. | Techniques for providing a direct injection semiconductor memory device |
US8199595B2 (en) | 2009-09-04 | 2012-06-12 | Micron Technology, Inc. | Techniques for sensing a semiconductor memory device |
US8174881B2 (en) | 2009-11-24 | 2012-05-08 | Micron Technology, Inc. | Techniques for reducing disturbance in a semiconductor device |
US8310893B2 (en) | 2009-12-16 | 2012-11-13 | Micron Technology, Inc. | Techniques for reducing impact of array disturbs in a semiconductor memory device |
US8416636B2 (en) | 2010-02-12 | 2013-04-09 | Micron Technology, Inc. | Techniques for controlling a semiconductor memory device |
US8411513B2 (en) | 2010-03-04 | 2013-04-02 | Micron Technology, Inc. | Techniques for providing a semiconductor memory device having hierarchical bit lines |
US8576631B2 (en) | 2010-03-04 | 2013-11-05 | Micron Technology, Inc. | Techniques for sensing a semiconductor memory device |
US8369177B2 (en) | 2010-03-05 | 2013-02-05 | Micron Technology, Inc. | Techniques for reading from and/or writing to a semiconductor memory device |
CN102812552B (zh) | 2010-03-15 | 2015-11-25 | 美光科技公司 | 半导体存储器装置及用于对半导体存储器装置进行偏置的方法 |
US8411524B2 (en) | 2010-05-06 | 2013-04-02 | Micron Technology, Inc. | Techniques for refreshing a semiconductor memory device |
US8455875B2 (en) | 2010-05-10 | 2013-06-04 | International Business Machines Corporation | Embedded DRAM for extremely thin semiconductor-on-insulator |
US8531878B2 (en) | 2011-05-17 | 2013-09-10 | Micron Technology, Inc. | Techniques for providing a semiconductor memory device |
US9559216B2 (en) | 2011-06-06 | 2017-01-31 | Micron Technology, Inc. | Semiconductor memory device and method for biasing same |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2815316C2 (de) * | 1978-04-08 | 1980-03-27 | Dynamit Nobel Ag, 5210 Troisdorf | Verfahren zur Herstellung von Alkylsilanen |
DE2815978C2 (de) * | 1978-04-13 | 1980-05-22 | Dynamit Nobel Ag, 5210 Troisdorf | Verfahren zur Herstellung von Athylsilanen |
US4340574A (en) * | 1980-08-28 | 1982-07-20 | Union Carbide Corporation | Process for the production of ultrahigh purity silane with recycle from separation columns |
US4292433A (en) * | 1980-10-31 | 1981-09-29 | Chisso Corporation | Method for producing 3-chloropropyltrichlorosilane |
EP0236089B1 (en) * | 1986-03-03 | 1992-08-05 | Fujitsu Limited | Dynamic random access memory having trench capacitor |
JPS6396951A (ja) * | 1986-10-14 | 1988-04-27 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
JPH0810755B2 (ja) * | 1986-10-22 | 1996-01-31 | 沖電気工業株式会社 | 半導体メモリの製造方法 |
US4873205A (en) * | 1987-12-21 | 1989-10-10 | International Business Machines Corporation | Method for providing silicide bridge contact between silicon regions separated by a thin dielectric |
JPH01231363A (ja) * | 1988-03-11 | 1989-09-14 | Hitachi Ltd | 半導体記憶装置 |
JPH01243460A (ja) * | 1988-03-25 | 1989-09-28 | Hitachi Ltd | 半導体記憶装置の製造方法 |
US5170372A (en) * | 1990-08-16 | 1992-12-08 | Texas Instruments Incorporated | Memory device having bit lines over a field oxide |
EP0471337A1 (en) * | 1990-08-16 | 1992-02-19 | Texas Instruments Incorporated | DRAM with trench capacitor and improved bit line contact |
DE4119994A1 (de) * | 1991-06-18 | 1992-12-24 | Huels Chemische Werke Ag | Verfahren zur herstellung von 3-chlorpropylsilanen |
JP2994110B2 (ja) * | 1991-09-09 | 1999-12-27 | 株式会社東芝 | 半導体記憶装置 |
DE4130790A1 (de) * | 1991-09-16 | 1993-03-18 | Wacker Chemie Gmbh | Verfahren zur abtrennung von alkenen bei der methylchlorsilan-destillation |
JP2904635B2 (ja) * | 1992-03-30 | 1999-06-14 | 株式会社東芝 | 半導体装置およびその製造方法 |
US5838038A (en) * | 1992-09-22 | 1998-11-17 | Kabushiki Kaisha Toshiba | Dynamic random access memory device with the combined open/folded bit-line pair arrangement |
JP3251777B2 (ja) * | 1994-06-28 | 2002-01-28 | 株式会社東芝 | 半導体記憶装置 |
US5442584A (en) | 1993-09-14 | 1995-08-15 | Goldstar Electron Co., Ltd. | Semiconductor memory device and method for fabricating the same dynamic random access memory device construction |
JPH0817983A (ja) * | 1994-06-29 | 1996-01-19 | Nec Kansai Ltd | 半田めっき装置 |
DE4433021C2 (de) | 1994-09-16 | 1999-04-15 | Forschungszentrum Juelich Gmbh | Vorrichtung zur Brechung von Strömungswirbeln an einer tangential und turbulent umströmten Fläche |
DE4442753C2 (de) * | 1994-12-01 | 2002-04-25 | Degussa | Verfahren zur Herstellung von Alkylhydrogenchlorsilane |
JP3311205B2 (ja) | 1995-07-13 | 2002-08-05 | 株式会社東芝 | 半導体記憶装置及びその製造方法 |
US5998257A (en) * | 1997-03-13 | 1999-12-07 | Micron Technology, Inc. | Semiconductor processing methods of forming integrated circuitry memory devices, methods of forming capacitor containers, methods of making electrical connection to circuit nodes and related integrated circuitry |
DE19825793C1 (de) * | 1998-06-10 | 2000-01-05 | Degussa | Verfahren zur Herstellung von in 3-Stellung funktionalisierten Organosilanen |
US6500977B1 (en) * | 2001-11-27 | 2002-12-31 | Dow Corning Corporation | Process for producing organosilanes |
-
1997
- 1997-02-07 JP JP04010197A patent/JP3161354B2/ja not_active Expired - Fee Related
-
1998
- 1998-02-03 TW TW087101447A patent/TW442922B/zh not_active IP Right Cessation
- 1998-02-05 DE DE69835780T patent/DE69835780T2/de not_active Expired - Fee Related
- 1998-02-05 EP EP98102007A patent/EP0858109B1/en not_active Expired - Lifetime
- 1998-02-06 CN CNB981001939A patent/CN1152433C/zh not_active Expired - Fee Related
- 1998-02-06 KR KR1019980003534A patent/KR100306409B1/ko not_active IP Right Cessation
- 1998-02-06 US US09/019,740 patent/US6225657B1/en not_active Expired - Lifetime
-
2001
- 2001-03-28 US US09/818,917 patent/US6509224B2/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101443902B (zh) * | 2006-04-13 | 2011-06-08 | 美光科技公司 | 用于在形成快闪存储器装置期间形成位线触点及位线的方法,及包括所述位线及位线触点的装置 |
Also Published As
Publication number | Publication date |
---|---|
CN1190263A (zh) | 1998-08-12 |
KR100306409B1 (ko) | 2001-11-30 |
EP0858109A2 (en) | 1998-08-12 |
DE69835780T2 (de) | 2006-12-28 |
EP0858109B1 (en) | 2006-09-06 |
JP3161354B2 (ja) | 2001-04-25 |
US6509224B2 (en) | 2003-01-21 |
JPH10223860A (ja) | 1998-08-21 |
US6225657B1 (en) | 2001-05-01 |
TW442922B (en) | 2001-06-23 |
US20010013601A1 (en) | 2001-08-16 |
DE69835780D1 (de) | 2006-10-19 |
EP0858109A3 (en) | 2000-02-02 |
KR19980071153A (ko) | 1998-10-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1152433C (zh) | 半导体器件及其制造方法 | |
CN1174493C (zh) | 半导体器件及其制造方法 | |
CN1324687C (zh) | 半导体装置的制造方法 | |
CN1269214C (zh) | 半导体器件及其制造方法 | |
CN1045349C (zh) | 具有覆埋位线元件的半导体器件及其制备方法 | |
CN1292483C (zh) | 半导体器件及其制造方法 | |
CN1153299C (zh) | 半导体装置 | |
CN1181554C (zh) | 半导体器件及其制造方法 | |
CN1290195C (zh) | 半导体装置及其制造方法 | |
CN1453874A (zh) | 薄膜存储器、阵列及其操作方法和制造方法 | |
CN1287456C (zh) | 半导体装置及其制造方法 | |
CN1181534C (zh) | 半导体装置的制造方法 | |
CN1173394C (zh) | 制造半导体集成电路器件的方法 | |
CN1512589A (zh) | 半导体器件、动态型半导体存储器件及半导体器件的制法 | |
CN1518112A (zh) | 半导体器件及其制造方法 | |
CN101044615A (zh) | 具有垂直u形晶体管的dram单元 | |
CN1893082A (zh) | 存储单元阵列及其形成方法 | |
CN1961420A (zh) | 半导体器件及其制造方法 | |
CN1930686A (zh) | 具有掩埋位线的半导体构造及其形成方法 | |
CN1956170A (zh) | 用于制造半导体器件的方法 | |
CN1487599A (zh) | 具有多个叠置沟道的场效应晶体管 | |
CN1925161A (zh) | 半导体产品及其制作方法 | |
CN109727989B (zh) | 一种三维存储器及其制造方法 | |
CN1841778A (zh) | 半导体器件中的场效应晶体管及其制造方法 | |
CN1152425C (zh) | 制作具有垂直的mos晶体管的集成电路的方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: RENESAS ELECTRONICS CORPORATION Free format text: FORMER OWNER: NEC CORP. Effective date: 20140409 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20140409 Address after: Kanagawa, Japan Patentee after: Renesas Electronics Corporation Address before: Tokyo, Japan Patentee before: NEC Corp. |
|
ASS | Succession or assignment of patent right |
Owner name: DESAILA ADVANCED TECHNOLOGY COMPANY Free format text: FORMER OWNER: RENESAS ELECTRONICS CORPORATION Effective date: 20141023 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20141023 Address after: American California Patentee after: Desella Advanced Technology Company Address before: Kanagawa, Japan Patentee before: Renesas Electronics Corporation |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20040602 Termination date: 20160206 |
|
CF01 | Termination of patent right due to non-payment of annual fee |