CN1674285A - 非易失性半导体存储器及其制造方法 - Google Patents
非易失性半导体存储器及其制造方法 Download PDFInfo
- Publication number
- CN1674285A CN1674285A CNA2005100038476A CN200510003847A CN1674285A CN 1674285 A CN1674285 A CN 1674285A CN A2005100038476 A CNA2005100038476 A CN A2005100038476A CN 200510003847 A CN200510003847 A CN 200510003847A CN 1674285 A CN1674285 A CN 1674285A
- Authority
- CN
- China
- Prior art keywords
- mentioned
- grid
- dielectric film
- semiconductor memory
- nonvolatile semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 117
- 238000004519 manufacturing process Methods 0.000 title claims description 76
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 50
- 229910052710 silicon Inorganic materials 0.000 claims description 50
- 239000010703 silicon Substances 0.000 claims description 50
- 238000000034 method Methods 0.000 claims description 44
- 238000000151 deposition Methods 0.000 claims description 42
- 239000000463 material Substances 0.000 claims description 38
- 239000000758 substrate Substances 0.000 claims description 34
- 230000008021 deposition Effects 0.000 claims description 21
- 230000015572 biosynthetic process Effects 0.000 claims description 14
- 230000002238 attenuated effect Effects 0.000 claims description 3
- 238000003913 materials processing Methods 0.000 claims 2
- 238000007667 floating Methods 0.000 abstract description 143
- 230000008878 coupling Effects 0.000 abstract description 24
- 238000010168 coupling process Methods 0.000 abstract description 24
- 238000005859 coupling reaction Methods 0.000 abstract description 24
- 238000005516 engineering process Methods 0.000 abstract description 18
- 230000000694 effects Effects 0.000 abstract description 5
- 230000007423 decrease Effects 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 239000012212 insulator Substances 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 72
- 229910052581 Si3N4 Inorganic materials 0.000 description 65
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 65
- 239000010410 layer Substances 0.000 description 60
- 229910052814 silicon oxide Inorganic materials 0.000 description 46
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 34
- 238000001312 dry etching Methods 0.000 description 20
- 238000005530 etching Methods 0.000 description 14
- 238000001459 lithography Methods 0.000 description 12
- 101100204059 Caenorhabditis elegans trap-2 gene Proteins 0.000 description 10
- 238000005229 chemical vapour deposition Methods 0.000 description 10
- 239000011229 interlayer Substances 0.000 description 9
- 230000003647 oxidation Effects 0.000 description 9
- 238000007254 oxidation reaction Methods 0.000 description 9
- 239000012528 membrane Substances 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
- 239000010937 tungsten Substances 0.000 description 6
- 238000012217 deletion Methods 0.000 description 5
- 230000037430 deletion Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- 238000001039 wet etching Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- -1 tungsten nitride Chemical class 0.000 description 3
- 238000003754 machining Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
- H01L29/42328—Gate electrodes for transistors with a floating gate with at least one additional gate other than the floating gate and the control gate, e.g. program gate, erase gate or select gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
Abstract
Description
Claims (25)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004087150A JP2005277035A (ja) | 2004-03-24 | 2004-03-24 | 不揮発性半導体記憶装置およびその製造方法 |
JP2004087150 | 2004-03-24 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1674285A true CN1674285A (zh) | 2005-09-28 |
CN100508197C CN100508197C (zh) | 2009-07-01 |
Family
ID=34988755
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005100038476A Expired - Fee Related CN100508197C (zh) | 2004-03-24 | 2005-01-07 | 非易失性半导体存储器及其制造方法 |
Country Status (5)
Country | Link |
---|---|
US (2) | US20050212034A1 (zh) |
JP (1) | JP2005277035A (zh) |
KR (1) | KR20050094763A (zh) |
CN (1) | CN100508197C (zh) |
TW (1) | TW200532900A (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102544015A (zh) * | 2010-12-22 | 2012-07-04 | 力晶科技股份有限公司 | 非易失性存储器及其制造方法 |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4761747B2 (ja) | 2004-09-22 | 2011-08-31 | 株式会社東芝 | 半導体装置 |
JP2007005380A (ja) * | 2005-06-21 | 2007-01-11 | Toshiba Corp | 半導体装置 |
US7687860B2 (en) * | 2005-06-24 | 2010-03-30 | Samsung Electronics Co., Ltd. | Semiconductor device including impurity regions having different cross-sectional shapes |
JP4745039B2 (ja) * | 2005-12-02 | 2011-08-10 | 株式会社東芝 | 不揮発性半導体記憶装置およびその製造方法 |
KR100740612B1 (ko) * | 2006-02-15 | 2007-07-18 | 삼성전자주식회사 | 반도체 장치 및 그 형성 방법 |
JP4762041B2 (ja) * | 2006-04-24 | 2011-08-31 | 株式会社東芝 | 不揮発性半導体メモリ |
JP4829015B2 (ja) | 2006-06-20 | 2011-11-30 | 株式会社東芝 | 不揮発性半導体記憶装置 |
US7667260B2 (en) * | 2006-08-09 | 2010-02-23 | Micron Technology, Inc. | Nanoscale floating gate and methods of formation |
US7588982B2 (en) * | 2006-08-29 | 2009-09-15 | Micron Technology, Inc. | Methods of forming semiconductor constructions and flash memory cells |
KR100823713B1 (ko) * | 2006-09-08 | 2008-04-21 | 삼성전자주식회사 | 불휘발성 메모리 장치 및 이의 제조 방법 |
US7615445B2 (en) * | 2006-09-21 | 2009-11-10 | Sandisk Corporation | Methods of reducing coupling between floating gates in nonvolatile memory |
WO2008036484A2 (en) * | 2006-09-21 | 2008-03-27 | Sandisk Corporation | Nonvolatile memory with reduced coupling between floating gates |
US20080074920A1 (en) * | 2006-09-21 | 2008-03-27 | Henry Chien | Nonvolatile Memory with Reduced Coupling Between Floating Gates |
US7867843B2 (en) * | 2006-12-22 | 2011-01-11 | Intel Corporation | Gate structures for flash memory and methods of making same |
US8116294B2 (en) * | 2007-01-31 | 2012-02-14 | Broadcom Corporation | RF bus controller |
JP5091504B2 (ja) | 2007-02-28 | 2012-12-05 | 株式会社東芝 | 半導体記憶装置 |
US8320191B2 (en) | 2007-08-30 | 2012-11-27 | Infineon Technologies Ag | Memory cell arrangement, method for controlling a memory cell, memory array and electronic device |
JP2009094170A (ja) | 2007-10-04 | 2009-04-30 | Nec Electronics Corp | 不揮発性半導体メモリ及びその製造方法 |
JP2010147414A (ja) * | 2008-12-22 | 2010-07-01 | Toshiba Corp | 半導体装置およびその製造方法 |
KR20100095389A (ko) * | 2009-02-20 | 2010-08-30 | 가부시끼가이샤 도시바 | 불휘발성 반도체 기억 장치 및 그 제조 방법 |
US20160203877A1 (en) | 2015-01-08 | 2016-07-14 | Delphi Technologies, Inc. | Memory device with data validity check |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR0179163B1 (ko) * | 1995-12-26 | 1999-03-20 | 문정환 | 비휘발성 메모리 셀 및 그 제조방법 |
US6841813B2 (en) * | 2001-08-13 | 2005-01-11 | Matrix Semiconductor, Inc. | TFT mask ROM and method for making same |
US7183153B2 (en) * | 2004-03-12 | 2007-02-27 | Sandisk Corporation | Method of manufacturing self aligned non-volatile memory cells |
-
2004
- 2004-03-24 JP JP2004087150A patent/JP2005277035A/ja not_active Withdrawn
- 2004-11-01 TW TW093133207A patent/TW200532900A/zh unknown
-
2005
- 2005-01-07 CN CNB2005100038476A patent/CN100508197C/zh not_active Expired - Fee Related
- 2005-01-08 KR KR1020050001934A patent/KR20050094763A/ko not_active Application Discontinuation
- 2005-01-10 US US11/031,484 patent/US20050212034A1/en not_active Abandoned
-
2007
- 2007-10-01 US US11/865,657 patent/US20080261365A1/en not_active Abandoned
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102544015A (zh) * | 2010-12-22 | 2012-07-04 | 力晶科技股份有限公司 | 非易失性存储器及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
US20050212034A1 (en) | 2005-09-29 |
US20080261365A1 (en) | 2008-10-23 |
CN100508197C (zh) | 2009-07-01 |
TW200532900A (en) | 2005-10-01 |
JP2005277035A (ja) | 2005-10-06 |
KR20050094763A (ko) | 2005-09-28 |
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Legal Events
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee |
Owner name: RENESAS ELECTRONICS CO., LTD. Free format text: FORMER NAME: RENESAS TECHNOLOGY CORP. |
|
CP03 | Change of name, title or address |
Address after: Kanagawa Patentee after: Renesas Electronics Corporation Address before: Tokyo, Japan, Japan Patentee before: Renesas Technology Corp. |
|
CP02 | Change in the address of a patent holder | ||
CP02 | Change in the address of a patent holder |
Address after: Tokyo, Japan, Japan Patentee after: Renesas Electronics Corporation Address before: Kanagawa Patentee before: Renesas Electronics Corporation |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090701 Termination date: 20200107 |