JP4761747B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP4761747B2 JP4761747B2 JP2004275528A JP2004275528A JP4761747B2 JP 4761747 B2 JP4761747 B2 JP 4761747B2 JP 2004275528 A JP2004275528 A JP 2004275528A JP 2004275528 A JP2004275528 A JP 2004275528A JP 4761747 B2 JP4761747 B2 JP 4761747B2
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- gate electrode
- insulating film
- floating gate
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- control gate
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- 239000004065 semiconductor Substances 0.000 title claims description 18
- 238000002955 isolation Methods 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 13
- 239000012535 impurity Substances 0.000 claims description 7
- 239000002019 doping agent Substances 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 26
- 238000000034 method Methods 0.000 description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 20
- 229910052814 silicon oxide Inorganic materials 0.000 description 20
- 230000007257 malfunction Effects 0.000 description 13
- 229910052581 Si3N4 Inorganic materials 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 238000001020 plasma etching Methods 0.000 description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- 230000000694 effects Effects 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 239000000243 solution Substances 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 239000005380 borophosphosilicate glass Substances 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000010893 electron trap Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 239000012670 alkaline solution Substances 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- -1 oxynitridation Chemical compound 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Description
図1の(a)および(b)は、本発明の第1の実施の形態に係る半導体装置である不揮発性メモリ(NANDフラッシュメモリ)の構成を示す図である。図1の(a)はNAND型フラッシュメモリのメモリセルの平面図、図1の(b)は上記メモリセルの等価回路図である。
図7の(a)〜(c)は、本第2の実施の形態に係る半導体装置である不揮発性メモリセルの製造手順を示す図である。以下、図2に示した如きメモリセルの製造手順を、図7の(a)〜(c)を基に説明する。なお、図7の(a)〜(c)では、ワード線方向(チャネル幅方向)の断面図を示している。
図8の(a)(b)は、本第3の実施の形態に係る半導体装置である不揮発性メモリセルの製造手順を示す図である。以下、図3に示した如きメモリセルの製造手順を、図8の(a)(b)を基に説明する。なお、図8の(a)(b)では、ワード線方向(チャネル幅方向)の断面図を示している。
Claims (2)
- 素子分離絶縁膜によって互いに分離された複数のメモリセルがチャネル幅方向に沿って並んで配置される半導体装置であって、
前記メモリセルの各々は、
半導体基板上にトンネル絶縁膜を挟んで設けられ、上部領域と前記チャネル幅方向の幅が前記上部領域の幅より広い下部領域とを有し、前記下部領域の側端部の全体が前記素子分離絶縁膜に接触する浮遊ゲート電極と、
前記浮遊ゲート電極の前記上部及び下部領域の上端部、前記上部領域の側端部を連続して覆う電極間絶縁膜と、
前記浮遊ゲート電極上に前記電極間絶縁膜を挟んで設けられた制御ゲート電極と、
を具備し、
前記上部領域の側端部を覆う前記電極間絶縁膜は、前記下部領域と前記素子分離絶縁膜との界面の延長線上をまたがり、且つ、前記上部領域の側端部を覆う前記電極間絶縁膜の下部の一部分が、前記上部領域の側端部と前記素子分離絶縁膜との間に介在し、
前記制御ゲート電極は、前記チャネル幅方向に並んで配置される前記複数のメモリセルに共通に用いられ、前記制御ゲート電極の一部が前記チャネル幅方向に互いに隣接する前記浮遊ゲート電極の対向領域に、埋め込まれ、前記制御ゲート電極の少なくとも埋め込み部分はドーパント不純物を含む半導体からなることを特徴とする半導体装置。 - 前記制御ゲート電極の埋め込み部分の上部の幅は、互いに隣接する前記浮遊ゲート電極の前記対向領域間の最小間隔から前記電極間絶縁膜の膜厚の2倍を差し引いた幅よりも広いことを特徴とする請求項1に記載の半導体装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004275528A JP4761747B2 (ja) | 2004-09-22 | 2004-09-22 | 半導体装置 |
US11/226,287 US7705391B2 (en) | 2004-09-22 | 2005-09-15 | Semiconductor device and method of manufacturing the same |
KR1020050087366A KR100736287B1 (ko) | 2004-09-22 | 2005-09-20 | 반도체 장치 및 그 제조 방법 |
US12/717,408 US7960230B2 (en) | 2004-09-22 | 2010-03-04 | Semiconductor device and method of manufacturing the same |
US13/114,590 US8076711B2 (en) | 2004-09-22 | 2011-05-24 | Semiconductor device and method of manufacturing the same |
US13/289,389 US8318561B2 (en) | 2004-09-22 | 2011-11-04 | Semiconductor device and method of manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004275528A JP4761747B2 (ja) | 2004-09-22 | 2004-09-22 | 半導体装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009055367A Division JP4856201B2 (ja) | 2009-03-09 | 2009-03-09 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006093327A JP2006093327A (ja) | 2006-04-06 |
JP4761747B2 true JP4761747B2 (ja) | 2011-08-31 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2004275528A Active JP4761747B2 (ja) | 2004-09-22 | 2004-09-22 | 半導体装置 |
Country Status (3)
Country | Link |
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US (4) | US7705391B2 (ja) |
JP (1) | JP4761747B2 (ja) |
KR (1) | KR100736287B1 (ja) |
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JP5237554B2 (ja) | 2004-10-29 | 2013-07-17 | スパンション エルエルシー | 半導体装置の製造方法 |
JP2006303308A (ja) * | 2005-04-22 | 2006-11-02 | Toshiba Corp | 半導体装置およびその製造方法 |
JP4250617B2 (ja) * | 2005-06-08 | 2009-04-08 | 株式会社東芝 | 不揮発性半導体記憶装置とその製造方法 |
JP2007005380A (ja) * | 2005-06-21 | 2007-01-11 | Toshiba Corp | 半導体装置 |
JP4762041B2 (ja) | 2006-04-24 | 2011-08-31 | 株式会社東芝 | 不揮発性半導体メモリ |
JP2008085131A (ja) * | 2006-09-28 | 2008-04-10 | Toshiba Corp | 半導体記憶装置 |
JP2008277694A (ja) * | 2007-05-07 | 2008-11-13 | Toshiba Corp | 半導体装置 |
KR100907902B1 (ko) * | 2007-09-12 | 2009-07-15 | 주식회사 동부하이텍 | 플래시 메모리 소자 및 그의 제조 방법 |
KR101402890B1 (ko) * | 2007-11-30 | 2014-06-27 | 삼성전자주식회사 | 비휘발성 기억 소자 및 그 형성 방법 |
JP2010147241A (ja) | 2008-12-18 | 2010-07-01 | Toshiba Corp | 不揮発性半導体記憶装置 |
US20100213534A1 (en) * | 2009-02-20 | 2010-08-26 | Katsuyuki Sekine | Nonvolatile semiconductor memory device and manufacturing method for the same |
JP2010272675A (ja) * | 2009-05-21 | 2010-12-02 | Toshiba Corp | 半導体記憶装置 |
JP2011049215A (ja) | 2009-08-25 | 2011-03-10 | Toshiba Corp | 半導体装置の製造方法 |
JP2012089817A (ja) * | 2010-09-21 | 2012-05-10 | Toshiba Corp | 半導体記憶装置およびその製造方法 |
US8853796B2 (en) * | 2011-05-19 | 2014-10-07 | GLOBALFOUNDIERS Singapore Pte. Ltd. | High-K metal gate device |
KR20140026122A (ko) * | 2012-08-24 | 2014-03-05 | 에스케이하이닉스 주식회사 | 불휘발성 메모리 소자 및 그 제조방법 |
TWI565035B (zh) * | 2014-04-11 | 2017-01-01 | 旺宏電子股份有限公司 | 記憶單元及其製造方法 |
US9691883B2 (en) * | 2014-06-19 | 2017-06-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Asymmetric formation approach for a floating gate of a split gate flash memory structure |
CN105355599B (zh) * | 2014-08-18 | 2018-09-21 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体存储器件及其制备方法、电子装置 |
US20160260815A1 (en) * | 2015-03-06 | 2016-09-08 | Kabushiki Kaisha Toshiba | Non-volatile semiconductor memory device and method of manufacturing the same |
CN110785846B (zh) | 2019-09-29 | 2021-03-23 | 长江存储科技有限责任公司 | 三维存储器件及其形成方法 |
CN110785847B (zh) | 2019-09-29 | 2021-02-09 | 长江存储科技有限责任公司 | 三维存储器件及其形成方法 |
CN112635488B (zh) * | 2019-09-29 | 2024-05-24 | 长江存储科技有限责任公司 | 三维存储器件及其形成方法 |
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2004
- 2004-09-22 JP JP2004275528A patent/JP4761747B2/ja active Active
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2005
- 2005-09-15 US US11/226,287 patent/US7705391B2/en active Active
- 2005-09-20 KR KR1020050087366A patent/KR100736287B1/ko active IP Right Grant
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2010
- 2010-03-04 US US12/717,408 patent/US7960230B2/en active Active
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2011
- 2011-05-24 US US13/114,590 patent/US8076711B2/en active Active
- 2011-11-04 US US13/289,389 patent/US8318561B2/en active Active
Also Published As
Publication number | Publication date |
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US7960230B2 (en) | 2011-06-14 |
US8076711B2 (en) | 2011-12-13 |
US8318561B2 (en) | 2012-11-27 |
US20120052639A1 (en) | 2012-03-01 |
US20110220984A1 (en) | 2011-09-15 |
JP2006093327A (ja) | 2006-04-06 |
KR20060051429A (ko) | 2006-05-19 |
US20100221881A1 (en) | 2010-09-02 |
US7705391B2 (en) | 2010-04-27 |
US20060060913A1 (en) | 2006-03-23 |
KR100736287B1 (ko) | 2007-07-09 |
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