JP4212432B2 - 不揮発性半導体記憶装置とその製造方法 - Google Patents

不揮発性半導体記憶装置とその製造方法 Download PDF

Info

Publication number
JP4212432B2
JP4212432B2 JP2003306789A JP2003306789A JP4212432B2 JP 4212432 B2 JP4212432 B2 JP 4212432B2 JP 2003306789 A JP2003306789 A JP 2003306789A JP 2003306789 A JP2003306789 A JP 2003306789A JP 4212432 B2 JP4212432 B2 JP 4212432B2
Authority
JP
Japan
Prior art keywords
region
memory cells
source
insulating film
cell array
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2003306789A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005079282A5 (enExample
JP2005079282A (ja
Inventor
栄人 坂上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2003306789A priority Critical patent/JP4212432B2/ja
Priority to CNA2004100579805A priority patent/CN1591677A/zh
Priority to US10/927,324 priority patent/US6989564B2/en
Publication of JP2005079282A publication Critical patent/JP2005079282A/ja
Publication of JP2005079282A5 publication Critical patent/JP2005079282A5/ja
Application granted granted Critical
Publication of JP4212432B2 publication Critical patent/JP4212432B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/42—Simultaneous manufacture of periphery and memory cells
    • H10B41/49—Simultaneous manufacture of periphery and memory cells comprising different types of peripheral transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Element Separation (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2003306789A 2003-08-29 2003-08-29 不揮発性半導体記憶装置とその製造方法 Expired - Fee Related JP4212432B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2003306789A JP4212432B2 (ja) 2003-08-29 2003-08-29 不揮発性半導体記憶装置とその製造方法
CNA2004100579805A CN1591677A (zh) 2003-08-29 2004-08-27 非易失性半导体存储设备及其制造方法
US10/927,324 US6989564B2 (en) 2003-08-29 2004-08-27 Nonvolatile semiconductor storage apparatus and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003306789A JP4212432B2 (ja) 2003-08-29 2003-08-29 不揮発性半導体記憶装置とその製造方法

Publications (3)

Publication Number Publication Date
JP2005079282A JP2005079282A (ja) 2005-03-24
JP2005079282A5 JP2005079282A5 (enExample) 2005-11-24
JP4212432B2 true JP4212432B2 (ja) 2009-01-21

Family

ID=34409776

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003306789A Expired - Fee Related JP4212432B2 (ja) 2003-08-29 2003-08-29 不揮発性半導体記憶装置とその製造方法

Country Status (3)

Country Link
US (1) US6989564B2 (enExample)
JP (1) JP4212432B2 (enExample)
CN (1) CN1591677A (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1686620A1 (en) * 2005-01-28 2006-08-02 STMicroelectronics S.r.l. Process for manufacturing a memory with local electrical contact between the source line and the well
US7541240B2 (en) * 2005-10-18 2009-06-02 Sandisk Corporation Integration process flow for flash devices with low gap fill aspect ratio
EP1786036A1 (en) * 2005-11-11 2007-05-16 STMicroelectronics S.r.l. Floating gate non-volatile memory cell and process for manufacturing
JP4799148B2 (ja) 2005-11-28 2011-10-26 株式会社東芝 不揮発性半導体記憶装置およびその製造方法
CN100517723C (zh) * 2006-01-23 2009-07-22 株式会社东芝 非易失性半导体存储器件
US8237210B1 (en) * 2006-02-08 2012-08-07 Spansion Llc Array type CAM cell for simplifying processes
US20090086548A1 (en) * 2007-10-02 2009-04-02 Eon Silicon Solution, Inc. Flash memory
KR20100002708A (ko) * 2008-06-30 2010-01-07 삼성전자주식회사 반도체 소자 및 그 형성 방법
US10153203B2 (en) * 2016-11-29 2018-12-11 Taiwan Semiconductor Manufacturing Company, Ltd. Methods for forming metal layers in openings and apparatus for forming same
US11145674B1 (en) * 2020-04-07 2021-10-12 Macronix International Co., Ltd. 3D memory device and method of manufacturing the same
CN113097146B (zh) * 2021-03-31 2022-06-17 长鑫存储技术有限公司 半导体结构的制备方法及半导体结构
CN116261331B (zh) * 2023-02-28 2025-07-22 广州粤芯半导体技术有限公司 闪存器件及其制作方法、电子设备

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000269467A (ja) 1999-03-16 2000-09-29 Toshiba Corp 半導体集積回路装置
JP3679970B2 (ja) * 2000-03-28 2005-08-03 株式会社東芝 不揮発性半導体記憶装置及びその製造方法

Also Published As

Publication number Publication date
JP2005079282A (ja) 2005-03-24
CN1591677A (zh) 2005-03-09
US20050083750A1 (en) 2005-04-21
US6989564B2 (en) 2006-01-24

Similar Documents

Publication Publication Date Title
US7196370B2 (en) Nonvolatile semiconductor memory device having trench-type isolation region, and method of fabricating the same
US8564034B2 (en) Solid-state imaging device
US8154075B2 (en) Nonvolatile semiconductor memory device and method for manufacturing the same
JP4212432B2 (ja) 不揮発性半導体記憶装置とその製造方法
US20080076243A1 (en) Self-aligned non-volatile memory and method of forming the same
JP2009088060A (ja) 不揮発性半導体記憶装置及びその製造方法
US7884414B2 (en) Semiconductor memory device and method of fabrication of the same
US20040135198A1 (en) Semiconductor device and method of fabricating the same, nonvolatile semiconductor memory and method of fabricating the same, and electronic apparatus including nonvolatile semiconductor memory
KR100521371B1 (ko) 소노스형 비휘발성 메모리 및 그 제조 방법
US8241984B2 (en) Semiconductor device and method for manufacturing the same
JP2004111917A (ja) 半導体装置及びその製造方法、不揮発性半導体記憶装置及びその製造方法、並びに不揮発性半導体記憶装置を備える電子装置
KR101008371B1 (ko) 반도체 디바이스 및 그 제조 방법
JP5184851B2 (ja) 不揮発性半導体記憶装置の製造方法
JP2007287795A (ja) 不揮発性半導体記憶装置
US20050269623A1 (en) Nonvolatile semiconductor memory device and a method of the same
JP4944766B2 (ja) 半導体装置及びその製造方法
JP2005228957A (ja) 不揮発性記憶素子およびその製造方法
JP3906111B2 (ja) 半導体集積回路装置
US7271062B2 (en) Non-volatile memory cell and fabricating method thereof and method of fabricating non-volatile memory
JP4761745B2 (ja) 半導体装置の製造方法
JP2005072380A (ja) 不揮発性半導体記憶装置、その製造方法、電子カード及び電子装置
JP2008251665A (ja) 不揮発性半導体記憶装置
JP2010177694A (ja) 半導体装置
JP5204159B2 (ja) 半導体記憶装置の製造方法
JP2005167201A (ja) 半導体記憶装置およびその製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20051007

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20051007

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20080710

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080722

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080922

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20081021

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20081028

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111107

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111107

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121107

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131107

Year of fee payment: 5

LAPS Cancellation because of no payment of annual fees