JP2008010842A5 - - Google Patents
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- Publication number
- JP2008010842A5 JP2008010842A5 JP2007136314A JP2007136314A JP2008010842A5 JP 2008010842 A5 JP2008010842 A5 JP 2008010842A5 JP 2007136314 A JP2007136314 A JP 2007136314A JP 2007136314 A JP2007136314 A JP 2007136314A JP 2008010842 A5 JP2008010842 A5 JP 2008010842A5
- Authority
- JP
- Japan
- Prior art keywords
- insulating layer
- layers
- memory device
- semiconductor memory
- control gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 21
- 230000015572 biosynthetic process Effects 0.000 claims 8
- -1 nitride compound Chemical class 0.000 claims 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 4
- 239000001301 oxygen Substances 0.000 claims 4
- 229910052760 oxygen Inorganic materials 0.000 claims 4
- 239000012535 impurity Substances 0.000 claims 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- BIXHRBFZLLFBFL-UHFFFAOYSA-N germanium nitride Chemical compound N#[Ge]N([Ge]#N)[Ge]#N BIXHRBFZLLFBFL-UHFFFAOYSA-N 0.000 claims 2
- 239000001257 hydrogen Substances 0.000 claims 2
- 229910052739 hydrogen Inorganic materials 0.000 claims 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 claims 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007136314A JP5483660B2 (ja) | 2006-06-01 | 2007-05-23 | 半導体装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006153516 | 2006-06-01 | ||
| JP2006153516 | 2006-06-01 | ||
| JP2007136314A JP5483660B2 (ja) | 2006-06-01 | 2007-05-23 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008010842A JP2008010842A (ja) | 2008-01-17 |
| JP2008010842A5 true JP2008010842A5 (enExample) | 2010-05-27 |
| JP5483660B2 JP5483660B2 (ja) | 2014-05-07 |
Family
ID=39068720
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007136314A Expired - Fee Related JP5483660B2 (ja) | 2006-06-01 | 2007-05-23 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5483660B2 (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009027134A (ja) * | 2007-06-21 | 2009-02-05 | Tokyo Electron Ltd | Ｍｏｓ型半導体メモリ装置 |
| JP5224832B2 (ja) | 2008-01-21 | 2013-07-03 | 任天堂株式会社 | 情報処理プログラムおよび情報処理装置 |
| JP2009231373A (ja) * | 2008-03-19 | 2009-10-08 | Toshiba Corp | 不揮発性半導体記憶装置 |
| JP2011124240A (ja) * | 2008-03-31 | 2011-06-23 | Tokyo Electron Ltd | Ｍｏｓ型半導体メモリ装置、その製造方法およびコンピュータ読み取り可能な記憶媒体 |
| KR100955680B1 (ko) * | 2008-04-07 | 2010-05-06 | 주식회사 하이닉스반도체 | 불휘발성 메모리소자의 제조방법 |
| KR101508492B1 (ko) * | 2008-05-09 | 2015-05-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 비휘발성 반도체 기억 장치 |
| US8188535B2 (en) * | 2008-05-16 | 2012-05-29 | Semiconductor Energy Laboratory Co., Ltd. | Nonvolatile semiconductor memory device and manufacturing method thereof |
| JP2010098054A (ja) * | 2008-10-15 | 2010-04-30 | Sharp Corp | メモリ素子、半導体記憶装置、表示装置、および携帯電子機器 |
| JP7114308B2 (ja) | 2018-04-12 | 2022-08-08 | キオクシア株式会社 | 半導体記憶装置 |
| CN116110956B (zh) * | 2023-04-12 | 2023-07-04 | 合肥晶合集成电路股份有限公司 | 一种存储器件及其制备方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03153085A (ja) * | 1989-11-10 | 1991-07-01 | Fujitsu Ltd | 半導体記憶装置及びその製造方法 |
| JPH03242978A (ja) * | 1990-02-21 | 1991-10-29 | Kawasaki Steel Corp | 半導体記憶装置及びその製造方法 |
| JP4151229B2 (ja) * | 2000-10-26 | 2008-09-17 | ソニー株式会社 | 不揮発性半導体記憶装置およびその製造方法 |
| JP3594550B2 (ja) * | 2000-11-27 | 2004-12-02 | シャープ株式会社 | 半導体装置の製造方法 |
| KR100688575B1 (ko) * | 2004-10-08 | 2007-03-02 | 삼성전자주식회사 | 비휘발성 반도체 메모리 소자 |
-
2007
- 2007-05-23 JP JP2007136314A patent/JP5483660B2/ja not_active Expired - Fee Related
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