JP2009267366A5 - - Google Patents
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- Publication number
- JP2009267366A5 JP2009267366A5 JP2009030450A JP2009030450A JP2009267366A5 JP 2009267366 A5 JP2009267366 A5 JP 2009267366A5 JP 2009030450 A JP2009030450 A JP 2009030450A JP 2009030450 A JP2009030450 A JP 2009030450A JP 2009267366 A5 JP2009267366 A5 JP 2009267366A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- silicon
- oxide film
- interface
- silicon oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009030450A JP2009267366A (ja) | 2008-04-02 | 2009-02-12 | 半導体記憶装置及びその製造方法 |
| US12/417,186 US8063435B2 (en) | 2008-04-02 | 2009-04-02 | Semiconductor memory and method for manufacturing the same |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008096373 | 2008-04-02 | ||
| JP2009030450A JP2009267366A (ja) | 2008-04-02 | 2009-02-12 | 半導体記憶装置及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009267366A JP2009267366A (ja) | 2009-11-12 |
| JP2009267366A5 true JP2009267366A5 (enExample) | 2012-03-15 |
Family
ID=40930808
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009030450A Pending JP2009267366A (ja) | 2008-04-02 | 2009-02-12 | 半導体記憶装置及びその製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US8063435B2 (enExample) |
| JP (1) | JP2009267366A (enExample) |
Families Citing this family (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8232176B2 (en) | 2006-06-22 | 2012-07-31 | Applied Materials, Inc. | Dielectric deposition and etch back processes for bottom up gapfill |
| US7867923B2 (en) | 2007-10-22 | 2011-01-11 | Applied Materials, Inc. | High quality silicon oxide films by remote plasma CVD from disilane precursors |
| WO2009089066A2 (en) | 2008-01-10 | 2009-07-16 | Stc.Unm | Compounds for use in diagnosing and treating melanoma, including metastatic melanoma and methods related to same |
| US8357435B2 (en) | 2008-05-09 | 2013-01-22 | Applied Materials, Inc. | Flowable dielectric equipment and processes |
| KR101512494B1 (ko) | 2009-01-09 | 2015-04-16 | 삼성전자주식회사 | 반도체 장치의 제조 방법 |
| US8511281B2 (en) * | 2009-07-10 | 2013-08-20 | Tula Technology, Inc. | Skip fire engine control |
| US8980382B2 (en) | 2009-12-02 | 2015-03-17 | Applied Materials, Inc. | Oxygen-doping for non-carbon radical-component CVD films |
| US8741788B2 (en) | 2009-08-06 | 2014-06-03 | Applied Materials, Inc. | Formation of silicon oxide using non-carbon flowable CVD processes |
| US8449942B2 (en) | 2009-11-12 | 2013-05-28 | Applied Materials, Inc. | Methods of curing non-carbon flowable CVD films |
| KR20120111738A (ko) | 2009-12-30 | 2012-10-10 | 어플라이드 머티어리얼스, 인코포레이티드 | 융통성을 가진 질소／수소 비율을 이용하여 제조된 라디칼에 의한 유전체 필름의 성장 |
| US8329262B2 (en) | 2010-01-05 | 2012-12-11 | Applied Materials, Inc. | Dielectric film formation using inert gas excitation |
| SG182336A1 (en) | 2010-01-06 | 2012-08-30 | Applied Materials Inc | Flowable dielectric using oxide liner |
| SG182333A1 (en) | 2010-01-07 | 2012-08-30 | Applied Materials Inc | In-situ ozone cure for radical-component cvd |
| SG183873A1 (en) * | 2010-03-05 | 2012-10-30 | Applied Materials Inc | Conformal layers by radical-component cvd |
| US9285168B2 (en) | 2010-10-05 | 2016-03-15 | Applied Materials, Inc. | Module for ozone cure and post-cure moisture treatment |
| US8664127B2 (en) | 2010-10-15 | 2014-03-04 | Applied Materials, Inc. | Two silicon-containing precursors for gapfill enhancing dielectric liner |
| US10283321B2 (en) | 2011-01-18 | 2019-05-07 | Applied Materials, Inc. | Semiconductor processing system and methods using capacitively coupled plasma |
| US8450191B2 (en) | 2011-01-24 | 2013-05-28 | Applied Materials, Inc. | Polysilicon films by HDP-CVD |
| US8716154B2 (en) | 2011-03-04 | 2014-05-06 | Applied Materials, Inc. | Reduced pattern loading using silicon oxide multi-layers |
| US8445078B2 (en) | 2011-04-20 | 2013-05-21 | Applied Materials, Inc. | Low temperature silicon oxide conversion |
| US8466073B2 (en) | 2011-06-03 | 2013-06-18 | Applied Materials, Inc. | Capping layer for reduced outgassing |
| US9404178B2 (en) | 2011-07-15 | 2016-08-02 | Applied Materials, Inc. | Surface treatment and deposition for reduced outgassing |
| US8617989B2 (en) | 2011-09-26 | 2013-12-31 | Applied Materials, Inc. | Liner property improvement |
| US8551891B2 (en) | 2011-10-04 | 2013-10-08 | Applied Materials, Inc. | Remote plasma burn-in |
| KR101261928B1 (ko) * | 2011-11-07 | 2013-05-08 | 현대자동차주식회사 | 실리콘 카바이드 쇼트키 베리어 다이오드의 제조방법 |
| KR101942504B1 (ko) * | 2012-08-31 | 2019-01-28 | 에스케이하이닉스 주식회사 | 매립 게이트형 반도체 소자, 그 반도체 소자를 갖는 모듈 및 시스템 그리고 그 반도체 소자 제조 방법 |
| US8889566B2 (en) | 2012-09-11 | 2014-11-18 | Applied Materials, Inc. | Low cost flowable dielectric films |
| US9018108B2 (en) | 2013-01-25 | 2015-04-28 | Applied Materials, Inc. | Low shrinkage dielectric films |
| JP6292507B2 (ja) * | 2014-02-28 | 2018-03-14 | 国立研究開発法人物質・材料研究機構 | 水素拡散障壁を備える半導体デバイス及びその製作方法 |
| US9412581B2 (en) | 2014-07-16 | 2016-08-09 | Applied Materials, Inc. | Low-K dielectric gapfill by flowable deposition |
| KR102263315B1 (ko) | 2014-08-06 | 2021-06-15 | 삼성전자주식회사 | 반도체 장치 및 반도체 장치의 제조방법 |
| CN110391289B (zh) * | 2019-06-20 | 2020-06-19 | 长江存储科技有限责任公司 | 一种半导体结构及其制作方法 |
| KR102867626B1 (ko) * | 2020-03-18 | 2025-10-02 | 삼성디스플레이 주식회사 | 표시 장치 및 표시 장치의 제조 방법 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09115904A (ja) | 1995-10-14 | 1997-05-02 | Semiconductor Energy Lab Co Ltd | 酸化膜の作製方法及び酸化膜の作製装置 |
| US20030017670A1 (en) * | 2001-07-20 | 2003-01-23 | Macronix International Co., Ltd. | Method of manufacturing a semiconductor memory device with a gate dielectric stack |
| JP3724648B2 (ja) * | 2003-10-01 | 2005-12-07 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
| US7183166B2 (en) * | 2003-11-25 | 2007-02-27 | Macronix International Co., Ltd. | Method for forming oxide on ONO structure |
| JP2005260177A (ja) * | 2004-03-15 | 2005-09-22 | Toshiba Corp | 半導体装置の製造方法 |
| JP4781806B2 (ja) * | 2005-12-20 | 2011-09-28 | シャープ株式会社 | 半導体記憶装置およびその製造方法 |
| JP2007311695A (ja) * | 2006-05-22 | 2007-11-29 | Renesas Technology Corp | 半導体装置の製造方法 |
-
2009
- 2009-02-12 JP JP2009030450A patent/JP2009267366A/ja active Pending
- 2009-04-02 US US12/417,186 patent/US8063435B2/en active Active
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