JP2011097033A5 - - Google Patents

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Publication number
JP2011097033A5
JP2011097033A5 JP2010210489A JP2010210489A JP2011097033A5 JP 2011097033 A5 JP2011097033 A5 JP 2011097033A5 JP 2010210489 A JP2010210489 A JP 2010210489A JP 2010210489 A JP2010210489 A JP 2010210489A JP 2011097033 A5 JP2011097033 A5 JP 2011097033A5
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JP
Japan
Prior art keywords
layer
conductive layer
memory
resistance
semiconductor device
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JP2010210489A
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English (en)
Japanese (ja)
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JP2011097033A (ja
JP5641840B2 (ja
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Priority to JP2010210489A priority Critical patent/JP5641840B2/ja
Priority claimed from JP2010210489A external-priority patent/JP5641840B2/ja
Publication of JP2011097033A publication Critical patent/JP2011097033A/ja
Publication of JP2011097033A5 publication Critical patent/JP2011097033A5/ja
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Publication of JP5641840B2 publication Critical patent/JP5641840B2/ja
Expired - Fee Related legal-status Critical Current
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JP2010210489A 2009-10-01 2010-09-21 半導体装置 Expired - Fee Related JP5641840B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010210489A JP5641840B2 (ja) 2009-10-01 2010-09-21 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009229869 2009-10-01
JP2009229869 2009-10-01
JP2010210489A JP5641840B2 (ja) 2009-10-01 2010-09-21 半導体装置

Publications (3)

Publication Number Publication Date
JP2011097033A JP2011097033A (ja) 2011-05-12
JP2011097033A5 true JP2011097033A5 (enExample) 2013-10-10
JP5641840B2 JP5641840B2 (ja) 2014-12-17

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Family Applications (1)

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JP2010210489A Expired - Fee Related JP5641840B2 (ja) 2009-10-01 2010-09-21 半導体装置

Country Status (2)

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US (1) US8264874B2 (enExample)
JP (1) JP5641840B2 (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8735863B2 (en) * 2011-01-28 2014-05-27 Privatran Integrated nonvolatile resistive memory elements
WO2012169449A1 (en) * 2011-06-08 2012-12-13 Semiconductor Energy Laboratory Co., Ltd. Sputtering target, method for manufacturing sputtering target, and method for forming thin film
EP2538471A1 (en) * 2011-06-20 2012-12-26 Glatfelter Gernsbach GmbH & Co. KG Multifunctional web for use in a lead-acid battery
US10510070B2 (en) 2011-10-17 2019-12-17 Capital One Services, Llc System, method, and apparatus for a dynamic transaction card
US10332102B2 (en) 2011-10-17 2019-06-25 Capital One Services, Llc System, method, and apparatus for a dynamic transaction card
US10489774B2 (en) 2011-10-17 2019-11-26 Capital One Services, Llc System, method, and apparatus for updating an existing dynamic transaction card
KR101976212B1 (ko) * 2011-10-24 2019-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
US8796855B2 (en) * 2012-01-13 2014-08-05 Freescale Semiconductor, Inc. Semiconductor devices with nonconductive vias
US8969867B2 (en) * 2012-01-18 2015-03-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
EP2713372B1 (en) * 2012-09-28 2017-08-23 Imec Non-volatile resistive memory devices with boosting capacitor and methods for baising resistive memory structures thereof
US10880741B2 (en) 2013-07-23 2020-12-29 Capital One Services, Llc Automated bluetooth pairing
US10474941B2 (en) 2015-04-14 2019-11-12 Capital One Services, Llc Dynamic transaction card antenna mounting
US10482453B2 (en) 2015-04-14 2019-11-19 Capital One Services, Llc Dynamic transaction card protected by gesture and voice recognition
US10360557B2 (en) 2015-04-14 2019-07-23 Capital One Services, Llc Dynamic transaction card protected by dropped card detection
EP3284027B1 (en) 2015-04-14 2021-09-22 Capital One Services, LLC Tamper-resistant dynamic transaction card and method of providing a tamper-resistant dynamic transaction card
EP3567512A1 (en) 2015-04-14 2019-11-13 Capital One Services, LLC A system, method, and apparatus for a dynamic transaction card
EP3283951B1 (en) 2015-04-14 2020-01-29 Capital One Services, LLC System and method for secure firmware validation
CN108140138A (zh) 2015-04-14 2018-06-08 第资本服务公司 具有emv接口的动态交易卡和制造方法
US10997588B2 (en) 2015-04-14 2021-05-04 Capital One Services, Llc Dynamic transaction card protected by dropped card detection
CA2982766C (en) 2015-04-14 2023-07-04 Capital One Services, Llc Automated bluetooth pairing
CA2990227A1 (en) * 2016-12-30 2018-06-30 Capital One Services, Llc Dynamic transaction card antenna mounting
WO2021026530A1 (en) * 2019-08-08 2021-02-11 The Regents Of The University Of California Crystallization of two-dimensional structures comprising multiple thin films
JP7057400B2 (ja) * 2020-08-20 2022-04-19 株式会社半導体エネルギー研究所 半導体装置

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US4818082A (en) 1988-05-27 1989-04-04 Eastman Kodak Company Compact wide-angle close-focus SLR zoom lens
JPH02153552A (ja) * 1988-08-23 1990-06-13 Seiko Epson Corp 半導体素子及びその製造方法
JP3501416B2 (ja) * 1994-04-28 2004-03-02 忠弘 大見 半導体装置
US8114719B2 (en) * 2004-06-03 2012-02-14 Semiconductor Energy Laboratory Co., Ltd. Memory device and manufacturing method of the same
JP4529654B2 (ja) * 2004-11-15 2010-08-25 ソニー株式会社 記憶素子及び記憶装置
TWI411095B (zh) * 2005-09-29 2013-10-01 Semiconductor Energy Lab 記憶裝置
CN102646681B (zh) * 2006-10-04 2015-08-05 株式会社半导体能源研究所 半导体器件
US7782651B2 (en) * 2006-10-24 2010-08-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including storage device and method for driving the same
KR101416876B1 (ko) * 2006-11-17 2014-07-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제조방법
JP5263757B2 (ja) * 2007-02-02 2013-08-14 株式会社半導体エネルギー研究所 半導体装置の作製方法
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JP5525694B2 (ja) * 2007-03-14 2014-06-18 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法
JP2009129498A (ja) * 2007-11-22 2009-06-11 Toshiba Corp 半導体記憶装置
JP5371400B2 (ja) * 2007-12-14 2013-12-18 株式会社半導体エネルギー研究所 メモリ及び半導体装置
US7872934B2 (en) * 2007-12-14 2011-01-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for writing data into memory
JP5301299B2 (ja) * 2008-01-31 2013-09-25 株式会社半導体エネルギー研究所 半導体装置
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JP2010028105A (ja) * 2008-06-20 2010-02-04 Semiconductor Energy Lab Co Ltd 記憶素子及び記憶素子の作製方法

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