JP5641840B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5641840B2
JP5641840B2 JP2010210489A JP2010210489A JP5641840B2 JP 5641840 B2 JP5641840 B2 JP 5641840B2 JP 2010210489 A JP2010210489 A JP 2010210489A JP 2010210489 A JP2010210489 A JP 2010210489A JP 5641840 B2 JP5641840 B2 JP 5641840B2
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JP
Japan
Prior art keywords
layer
memory
semiconductor device
conductive layer
circuit
Prior art date
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Expired - Fee Related
Application number
JP2010210489A
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English (en)
Japanese (ja)
Other versions
JP2011097033A (ja
JP2011097033A5 (enExample
Inventor
齋藤　利彦
利彦 齋藤
隆徳 松嵜
隆徳 松嵜
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2010210489A priority Critical patent/JP5641840B2/ja
Publication of JP2011097033A publication Critical patent/JP2011097033A/ja
Publication of JP2011097033A5 publication Critical patent/JP2011097033A5/ja
Application granted granted Critical
Publication of JP5641840B2 publication Critical patent/JP5641840B2/ja
Expired - Fee Related legal-status Critical Current
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/30—Resistive cell, memory material aspects
    • G11C2213/33—Material including silicon
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/30—Resistive cell, memory material aspects
    • G11C2213/34—Material includes an oxide or a nitride
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/79—Array wherein the access device being a transistor

Landscapes

  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
JP2010210489A 2009-10-01 2010-09-21 半導体装置 Expired - Fee Related JP5641840B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010210489A JP5641840B2 (ja) 2009-10-01 2010-09-21 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009229869 2009-10-01
JP2009229869 2009-10-01
JP2010210489A JP5641840B2 (ja) 2009-10-01 2010-09-21 半導体装置

Publications (3)

Publication Number Publication Date
JP2011097033A JP2011097033A (ja) 2011-05-12
JP2011097033A5 JP2011097033A5 (enExample) 2013-10-10
JP5641840B2 true JP5641840B2 (ja) 2014-12-17

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010210489A Expired - Fee Related JP5641840B2 (ja) 2009-10-01 2010-09-21 半導体装置

Country Status (2)

Country Link
US (1) US8264874B2 (enExample)
JP (1) JP5641840B2 (enExample)

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* Cited by examiner, † Cited by third party
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US8735863B2 (en) * 2011-01-28 2014-05-27 Privatran Integrated nonvolatile resistive memory elements
WO2012169449A1 (en) * 2011-06-08 2012-12-13 Semiconductor Energy Laboratory Co., Ltd. Sputtering target, method for manufacturing sputtering target, and method for forming thin film
EP2538471A1 (en) * 2011-06-20 2012-12-26 Glatfelter Gernsbach GmbH & Co. KG Multifunctional web for use in a lead-acid battery
US10510070B2 (en) 2011-10-17 2019-12-17 Capital One Services, Llc System, method, and apparatus for a dynamic transaction card
US10332102B2 (en) 2011-10-17 2019-06-25 Capital One Services, Llc System, method, and apparatus for a dynamic transaction card
US10489774B2 (en) 2011-10-17 2019-11-26 Capital One Services, Llc System, method, and apparatus for updating an existing dynamic transaction card
KR101976212B1 (ko) * 2011-10-24 2019-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
US8796855B2 (en) * 2012-01-13 2014-08-05 Freescale Semiconductor, Inc. Semiconductor devices with nonconductive vias
US8969867B2 (en) * 2012-01-18 2015-03-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
EP2713372B1 (en) * 2012-09-28 2017-08-23 Imec Non-volatile resistive memory devices with boosting capacitor and methods for baising resistive memory structures thereof
US10880741B2 (en) 2013-07-23 2020-12-29 Capital One Services, Llc Automated bluetooth pairing
US10474941B2 (en) 2015-04-14 2019-11-12 Capital One Services, Llc Dynamic transaction card antenna mounting
US10482453B2 (en) 2015-04-14 2019-11-19 Capital One Services, Llc Dynamic transaction card protected by gesture and voice recognition
US10360557B2 (en) 2015-04-14 2019-07-23 Capital One Services, Llc Dynamic transaction card protected by dropped card detection
EP3284027B1 (en) 2015-04-14 2021-09-22 Capital One Services, LLC Tamper-resistant dynamic transaction card and method of providing a tamper-resistant dynamic transaction card
EP3567512A1 (en) 2015-04-14 2019-11-13 Capital One Services, LLC A system, method, and apparatus for a dynamic transaction card
EP3283951B1 (en) 2015-04-14 2020-01-29 Capital One Services, LLC System and method for secure firmware validation
CN108140138A (zh) 2015-04-14 2018-06-08 第资本服务公司 具有emv接口的动态交易卡和制造方法
US10997588B2 (en) 2015-04-14 2021-05-04 Capital One Services, Llc Dynamic transaction card protected by dropped card detection
CA2982766C (en) 2015-04-14 2023-07-04 Capital One Services, Llc Automated bluetooth pairing
CA2990227A1 (en) * 2016-12-30 2018-06-30 Capital One Services, Llc Dynamic transaction card antenna mounting
WO2021026530A1 (en) * 2019-08-08 2021-02-11 The Regents Of The University Of California Crystallization of two-dimensional structures comprising multiple thin films
JP7057400B2 (ja) * 2020-08-20 2022-04-19 株式会社半導体エネルギー研究所 半導体装置

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4818082A (en) 1988-05-27 1989-04-04 Eastman Kodak Company Compact wide-angle close-focus SLR zoom lens
JPH02153552A (ja) * 1988-08-23 1990-06-13 Seiko Epson Corp 半導体素子及びその製造方法
JP3501416B2 (ja) * 1994-04-28 2004-03-02 忠弘 大見 半導体装置
US8114719B2 (en) * 2004-06-03 2012-02-14 Semiconductor Energy Laboratory Co., Ltd. Memory device and manufacturing method of the same
JP4529654B2 (ja) * 2004-11-15 2010-08-25 ソニー株式会社 記憶素子及び記憶装置
TWI411095B (zh) * 2005-09-29 2013-10-01 Semiconductor Energy Lab 記憶裝置
CN102646681B (zh) * 2006-10-04 2015-08-05 株式会社半导体能源研究所 半导体器件
US7782651B2 (en) * 2006-10-24 2010-08-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including storage device and method for driving the same
KR101416876B1 (ko) * 2006-11-17 2014-07-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제조방법
JP5263757B2 (ja) * 2007-02-02 2013-08-14 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8283724B2 (en) * 2007-02-26 2012-10-09 Semiconductor Energy Laboratory Co., Ltd. Memory element and semiconductor device, and method for manufacturing the same
JP5525694B2 (ja) * 2007-03-14 2014-06-18 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法
JP2009129498A (ja) * 2007-11-22 2009-06-11 Toshiba Corp 半導体記憶装置
JP5371400B2 (ja) * 2007-12-14 2013-12-18 株式会社半導体エネルギー研究所 メモリ及び半導体装置
US7872934B2 (en) * 2007-12-14 2011-01-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for writing data into memory
JP5301299B2 (ja) * 2008-01-31 2013-09-25 株式会社半導体エネルギー研究所 半導体装置
US8284596B2 (en) * 2008-06-09 2012-10-09 Qimonda Ag Integrated circuit including an array of diodes coupled to a layer of resistance changing material
JP2010028105A (ja) * 2008-06-20 2010-02-04 Semiconductor Energy Lab Co Ltd 記憶素子及び記憶素子の作製方法

Also Published As

Publication number Publication date
JP2011097033A (ja) 2011-05-12
US20110080774A1 (en) 2011-04-07
US8264874B2 (en) 2012-09-11

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