JP2009049393A5 - - Google Patents

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Publication number
JP2009049393A5
JP2009049393A5 JP2008188379A JP2008188379A JP2009049393A5 JP 2009049393 A5 JP2009049393 A5 JP 2009049393A5 JP 2008188379 A JP2008188379 A JP 2008188379A JP 2008188379 A JP2008188379 A JP 2008188379A JP 2009049393 A5 JP2009049393 A5 JP 2009049393A5
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JP
Japan
Prior art keywords
semiconductor layer
island
stacked body
layer
shaped semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2008188379A
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English (en)
Japanese (ja)
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JP2009049393A (ja
JP5443711B2 (ja
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Publication date
Application filed filed Critical
Priority to JP2008188379A priority Critical patent/JP5443711B2/ja
Priority claimed from JP2008188379A external-priority patent/JP5443711B2/ja
Publication of JP2009049393A publication Critical patent/JP2009049393A/ja
Publication of JP2009049393A5 publication Critical patent/JP2009049393A5/ja
Application granted granted Critical
Publication of JP5443711B2 publication Critical patent/JP5443711B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2008188379A 2007-07-26 2008-07-22 表示装置 Expired - Fee Related JP5443711B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008188379A JP5443711B2 (ja) 2007-07-26 2008-07-22 表示装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007194844 2007-07-26
JP2007194844 2007-07-26
JP2008188379A JP5443711B2 (ja) 2007-07-26 2008-07-22 表示装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013263219A Division JP2014102509A (ja) 2007-07-26 2013-12-20 液晶表示装置

Publications (3)

Publication Number Publication Date
JP2009049393A JP2009049393A (ja) 2009-03-05
JP2009049393A5 true JP2009049393A5 (enExample) 2011-06-23
JP5443711B2 JP5443711B2 (ja) 2014-03-19

Family

ID=40294454

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2008188379A Expired - Fee Related JP5443711B2 (ja) 2007-07-26 2008-07-22 表示装置
JP2013263219A Withdrawn JP2014102509A (ja) 2007-07-26 2013-12-20 液晶表示装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2013263219A Withdrawn JP2014102509A (ja) 2007-07-26 2013-12-20 液晶表示装置

Country Status (5)

Country Link
US (2) US7633089B2 (enExample)
JP (2) JP5443711B2 (enExample)
KR (1) KR101506465B1 (enExample)
CN (1) CN101354514B (enExample)
TW (1) TWI437339B (enExample)

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US7633089B2 (en) * 2007-07-26 2009-12-15 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device provided with the same
JP2009071289A (ja) 2007-08-17 2009-04-02 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
US8101444B2 (en) 2007-08-17 2012-01-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US20090090915A1 (en) 2007-10-05 2009-04-09 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, display device having thin film transistor, and method for manufacturing the same
JP2009267399A (ja) * 2008-04-04 2009-11-12 Fujifilm Corp 半導体装置，半導体装置の製造方法，表示装置及び表示装置の製造方法
WO2010058581A1 (ja) * 2008-11-20 2010-05-27 シャープ株式会社 シフトレジスタ
US8803784B2 (en) 2009-07-15 2014-08-12 Sharp Kabushiki Kaisha Scanning signal line drive circuit and display device having the same
JP5399163B2 (ja) * 2009-08-07 2014-01-29 グローバル・オーエルイーディー・テクノロジー・リミテッド・ライアビリティ・カンパニー 表示装置
KR101763959B1 (ko) * 2009-10-08 2017-08-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 표시 장치, 및 전자 기기
KR101759504B1 (ko) * 2009-10-09 2017-07-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 표시 장치 및 이를 포함한 전자 기기
US9093539B2 (en) 2011-05-13 2015-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
CN103278990B (zh) * 2013-05-28 2017-08-25 京东方科技集团股份有限公司 像素结构及液晶面板
KR102144432B1 (ko) * 2013-11-06 2020-08-13 엘지디스플레이 주식회사 플렉서블 표시 장치 및 커브드 표시 장치
TWI595296B (zh) * 2014-09-23 2017-08-11 元太科技工業股份有限公司 顯示器
CN104317089B (zh) * 2014-10-27 2017-02-01 合肥鑫晟光电科技有限公司 一种阵列基板及其制备方法、显示面板、显示装置
KR102526110B1 (ko) * 2016-04-12 2023-04-27 삼성디스플레이 주식회사 표시 장치 및 표시 장치의 제조 방법
CN107728352B (zh) * 2017-11-22 2020-05-05 深圳市华星光电半导体显示技术有限公司 一种像素驱动电路及液晶显示面板
JP7242558B2 (ja) 2018-01-05 2023-03-20 株式会社半導体エネルギー研究所 表示モジュール
CN110642829A (zh) * 2019-10-14 2020-01-03 中材江苏太阳能新材料有限公司 一种含噻吩环的光电材料及其制备方法
CN110727151A (zh) * 2019-10-25 2020-01-24 京东方科技集团股份有限公司 阵列基板、显示面板、显示装置及驱动方法
JP7508336B2 (ja) * 2020-10-26 2024-07-01 株式会社ジャパンディスプレイ 半導体基板及び表示装置
US12062725B2 (en) * 2021-02-26 2024-08-13 Boe Technology Group Co., Ltd. Thin film transistor, display panel and display device

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JPH07326767A (ja) * 1994-05-31 1995-12-12 Sony Corp 薄膜トランジスタおよびそれを用いた液晶表示装置
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KR100938887B1 (ko) * 2003-06-30 2010-01-27 엘지디스플레이 주식회사 액정표시장치용 어레이기판과 그 제조방법
JP4748954B2 (ja) 2003-07-14 2011-08-17 株式会社半導体エネルギー研究所 液晶表示装置
TWI368774B (en) * 2003-07-14 2012-07-21 Semiconductor Energy Lab Light-emitting device
JP2005167051A (ja) 2003-12-04 2005-06-23 Sony Corp 薄膜トランジスタおよび薄膜トランジスタの製造方法
JP4578826B2 (ja) * 2004-02-26 2010-11-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4134106B2 (ja) * 2004-06-11 2008-08-13 シャープ株式会社 カラーフィルタ基板およびその製造方法ならびにそれを備えた表示装置
US7648861B2 (en) * 2004-08-03 2010-01-19 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a semiconductor device including separately forming a second semiconductor film containing an impurity element over the first semiconductor region
JP2004356646A (ja) * 2004-08-06 2004-12-16 Casio Comput Co Ltd 薄膜トランジスタ
JP2007025005A (ja) * 2005-07-12 2007-02-01 Fujifilm Holdings Corp セル内構造の製造方法及びセル内構造並びに表示装置
EP1998373A3 (en) * 2005-09-29 2012-10-31 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device having oxide semiconductor layer and manufacturing method thereof
WO2007058329A1 (en) * 2005-11-15 2007-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7633089B2 (en) * 2007-07-26 2009-12-15 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device provided with the same

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