TWI437339B - 液晶顯示裝置和具有該液晶顯示裝置的電子裝置 - Google Patents
液晶顯示裝置和具有該液晶顯示裝置的電子裝置 Download PDFInfo
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- TWI437339B TWI437339B TW097127808A TW97127808A TWI437339B TW I437339 B TWI437339 B TW I437339B TW 097127808 A TW097127808 A TW 097127808A TW 97127808 A TW97127808 A TW 97127808A TW I437339 B TWI437339 B TW I437339B
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- semiconductor layer
- island
- conductive
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- shaped semiconductor
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Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/13624—Active matrix addressed cells having more than one switching element per pixel
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134318—Electrodes characterised by their geometrical arrangement having a patterned common electrode
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
- H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/40—Crystalline structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/441—Interconnections, e.g. scanning lines
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Geometry (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007194844 | 2007-07-26 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200916931A TW200916931A (en) | 2009-04-16 |
| TWI437339B true TWI437339B (zh) | 2014-05-11 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097127808A TWI437339B (zh) | 2007-07-26 | 2008-07-22 | 液晶顯示裝置和具有該液晶顯示裝置的電子裝置 |
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|---|---|
| US (2) | US7633089B2 (enExample) |
| JP (2) | JP5443711B2 (enExample) |
| KR (1) | KR101506465B1 (enExample) |
| CN (1) | CN101354514B (enExample) |
| TW (1) | TWI437339B (enExample) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US7633089B2 (en) * | 2007-07-26 | 2009-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and electronic device provided with the same |
| US8101444B2 (en) * | 2007-08-17 | 2012-01-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| JP2009071289A (ja) * | 2007-08-17 | 2009-04-02 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| US20090090915A1 (en) | 2007-10-05 | 2009-04-09 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor, display device having thin film transistor, and method for manufacturing the same |
| JP2009267399A (ja) * | 2008-04-04 | 2009-11-12 | Fujifilm Corp | 半導体装置，半導体装置の製造方法，表示装置及び表示装置の製造方法 |
| WO2010058581A1 (ja) * | 2008-11-20 | 2010-05-27 | シャープ株式会社 | シフトレジスタ |
| EP2455931A4 (en) * | 2009-07-15 | 2013-05-15 | Sharp Kk | SCREEN SIGNAL PLANT DRIVE SWITCHING AND DISPLAY DEVICE THEREFOR |
| JP5399163B2 (ja) * | 2009-08-07 | 2014-01-29 | グローバル・オーエルイーディー・テクノロジー・リミテッド・ライアビリティ・カンパニー | 表示装置 |
| CN102648524B (zh) * | 2009-10-08 | 2015-09-23 | 株式会社半导体能源研究所 | 半导体器件、显示装置和电子电器 |
| KR101944239B1 (ko) * | 2009-10-09 | 2019-01-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 표시 장치 및 이를 포함한 전자 기기 |
| US9093539B2 (en) * | 2011-05-13 | 2015-07-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| CN103278990B (zh) * | 2013-05-28 | 2017-08-25 | 京东方科技集团股份有限公司 | 像素结构及液晶面板 |
| KR102144432B1 (ko) * | 2013-11-06 | 2020-08-13 | 엘지디스플레이 주식회사 | 플렉서블 표시 장치 및 커브드 표시 장치 |
| TWI595296B (zh) * | 2014-09-23 | 2017-08-11 | 元太科技工業股份有限公司 | 顯示器 |
| CN104317089B (zh) * | 2014-10-27 | 2017-02-01 | 合肥鑫晟光电科技有限公司 | 一种阵列基板及其制备方法、显示面板、显示装置 |
| KR102526110B1 (ko) | 2016-04-12 | 2023-04-27 | 삼성디스플레이 주식회사 | 표시 장치 및 표시 장치의 제조 방법 |
| CN107728352B (zh) * | 2017-11-22 | 2020-05-05 | 深圳市华星光电半导体显示技术有限公司 | 一种像素驱动电路及液晶显示面板 |
| WO2019135147A1 (ja) * | 2018-01-05 | 2019-07-11 | 株式会社半導体エネルギー研究所 | 表示装置、表示モジュール、及び電子機器 |
| CN110642829A (zh) * | 2019-10-14 | 2020-01-03 | 中材江苏太阳能新材料有限公司 | 一种含噻吩环的光电材料及其制备方法 |
| CN110727151A (zh) | 2019-10-25 | 2020-01-24 | 京东方科技集团股份有限公司 | 阵列基板、显示面板、显示装置及驱动方法 |
| JP7508336B2 (ja) * | 2020-10-26 | 2024-07-01 | 株式会社ジャパンディスプレイ | 半導体基板及び表示装置 |
| WO2022178842A1 (zh) * | 2021-02-26 | 2022-09-01 | 京东方科技集团股份有限公司 | 薄膜晶体管、显示面板及显示装置 |
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| US5091334A (en) * | 1980-03-03 | 1992-02-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JPS62247569A (ja) * | 1986-04-18 | 1987-10-28 | Matsushita Electric Ind Co Ltd | 半導体装置 |
| JPH0451570A (ja) * | 1990-06-20 | 1992-02-20 | Casio Comput Co Ltd | 薄膜トランジスタ |
| US5849601A (en) * | 1990-12-25 | 1998-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method for manufacturing the same |
| JP2791422B2 (ja) | 1990-12-25 | 1998-08-27 | 株式会社 半導体エネルギー研究所 | 電気光学装置およびその作製方法 |
| US7115902B1 (en) * | 1990-11-20 | 2006-10-03 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method for manufacturing the same |
| US7576360B2 (en) * | 1990-12-25 | 2009-08-18 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device which comprises thin film transistors and method for manufacturing the same |
| US7098479B1 (en) * | 1990-12-25 | 2006-08-29 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method for manufacturing the same |
| JPH07326767A (ja) * | 1994-05-31 | 1995-12-12 | Sony Corp | 薄膜トランジスタおよびそれを用いた液晶表示装置 |
| JP2762968B2 (ja) * | 1995-09-28 | 1998-06-11 | 日本電気株式会社 | 電界効果型薄膜トランジスタの製造方法 |
| KR100257158B1 (ko) | 1997-06-30 | 2000-05-15 | 김영환 | 박막 트랜지스터 및 그의 제조 방법 |
| JP3942701B2 (ja) * | 1997-09-03 | 2007-07-11 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
| JP4236716B2 (ja) * | 1997-09-29 | 2009-03-11 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP4215905B2 (ja) * | 1999-02-15 | 2009-01-28 | シャープ株式会社 | 液晶表示装置 |
| JP2003015119A (ja) * | 2001-04-23 | 2003-01-15 | Toray Ind Inc | カラーフィルタおよび液晶表示装置 |
| JP3938680B2 (ja) * | 2001-11-19 | 2007-06-27 | シャープ株式会社 | 液晶表示装置用基板及びその製造方法及びそれを備えた液晶表示装置 |
| JP2003287773A (ja) * | 2002-01-23 | 2003-10-10 | Seiko Epson Corp | 反射型電気光学装置、および電子機器 |
| KR100915231B1 (ko) * | 2002-05-17 | 2009-09-02 | 삼성전자주식회사 | 저유전율 절연막의 증착방법, 이를 이용한 박막트랜지스터및 그 제조방법 |
| TW577176B (en) * | 2003-03-31 | 2004-02-21 | Ind Tech Res Inst | Structure of thin-film transistor, and the manufacturing method thereof |
| KR100938887B1 (ko) * | 2003-06-30 | 2010-01-27 | 엘지디스플레이 주식회사 | 액정표시장치용 어레이기판과 그 제조방법 |
| JP4748954B2 (ja) | 2003-07-14 | 2011-08-17 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
| TWI399580B (zh) * | 2003-07-14 | 2013-06-21 | 半導體能源研究所股份有限公司 | 半導體裝置及顯示裝置 |
| JP2005167051A (ja) | 2003-12-04 | 2005-06-23 | Sony Corp | 薄膜トランジスタおよび薄膜トランジスタの製造方法 |
| JP4578826B2 (ja) * | 2004-02-26 | 2010-11-10 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4134106B2 (ja) * | 2004-06-11 | 2008-08-13 | シャープ株式会社 | カラーフィルタ基板およびその製造方法ならびにそれを備えた表示装置 |
| US7648861B2 (en) * | 2004-08-03 | 2010-01-19 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating a semiconductor device including separately forming a second semiconductor film containing an impurity element over the first semiconductor region |
| JP2004356646A (ja) * | 2004-08-06 | 2004-12-16 | Casio Comput Co Ltd | 薄膜トランジスタ |
| JP2007025005A (ja) * | 2005-07-12 | 2007-02-01 | Fujifilm Holdings Corp | セル内構造の製造方法及びセル内構造並びに表示装置 |
| EP1998373A3 (en) * | 2005-09-29 | 2012-10-31 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device having oxide semiconductor layer and manufacturing method thereof |
| KR101103374B1 (ko) * | 2005-11-15 | 2012-01-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치 |
| US7633089B2 (en) * | 2007-07-26 | 2009-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and electronic device provided with the same |
-
2008
- 2008-07-15 US US12/219,014 patent/US7633089B2/en not_active Expired - Fee Related
- 2008-07-22 TW TW097127808A patent/TWI437339B/zh not_active IP Right Cessation
- 2008-07-22 JP JP2008188379A patent/JP5443711B2/ja not_active Expired - Fee Related
- 2008-07-24 KR KR1020080072170A patent/KR101506465B1/ko not_active Expired - Fee Related
- 2008-07-25 CN CN2008101301299A patent/CN101354514B/zh not_active Expired - Fee Related
-
2009
- 2009-10-29 US US12/608,266 patent/US8044407B2/en not_active Expired - Fee Related
-
2013
- 2013-12-20 JP JP2013263219A patent/JP2014102509A/ja not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| TW200916931A (en) | 2009-04-16 |
| US20100044713A1 (en) | 2010-02-25 |
| KR20090012120A (ko) | 2009-02-02 |
| US7633089B2 (en) | 2009-12-15 |
| KR101506465B1 (ko) | 2015-03-27 |
| CN101354514B (zh) | 2012-04-25 |
| JP5443711B2 (ja) | 2014-03-19 |
| US8044407B2 (en) | 2011-10-25 |
| US20090026452A1 (en) | 2009-01-29 |
| CN101354514A (zh) | 2009-01-28 |
| JP2014102509A (ja) | 2014-06-05 |
| JP2009049393A (ja) | 2009-03-05 |
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